Texas Instruments LM5112SDX/NOPB

Overview

LM5112SDX/NOPB from Texas Instruments is a high-speed, single-channel MOSFET gate driver optimized for low-side switching in high-frequency power converters. It delivers 7-A peak sink and 3-A peak source current, achieves 12 ns fall and 14 ns rise times into 2-nF load, and supports split-supply operation via dedicated IN_REF and VEE pins - enabling robust negative gate drive in DC/DC and solar microinverter applications.

For engineers reviewing the LM5112SDX/NOPB datasheet, LM5112SDX/NOPB pinout, LM5112SDX/NOPB application, or LM5112SDX/NOPB equivalent, key selection criteria include UVLO threshold (2.4–3.5 V), compound CMOS/bipolar output architecture for stable drive across temperature, propagation delay (25 ns typ), and WSON-6 package thermal performance (R_θJA = 40°C/W).

Technical Context

The LM5112SDX/NOPB integrates a compound totem-pole output stage combining MOS and bipolar transistors in parallel: the MOS device ensures rail-to-rail swing (VCC to VEE), while the bipolar device delivers high peak current during the Miller plateau region. This architecture reduces output current variation over voltage and temperature.

It features dual logic inputs (IN and INB) supporting both inverting and non-inverting configurations with TTL-compatible thresholds, plus independent input ground (IN_REF) and power ground (VEE) pins that enable flexible single- or split-supply biasing - critical for systems requiring negative V_GS turn-off in high-noise environments.

Key Specifications

Pinout & Package

LM5112SDX/NOPB uses the Power Enhanced 6-pin WSON package (3.00 mm × 3.00 mm) with an exposed thermal pad bonded to die substrate and intended for connection to VEE ground plane to achieve R_θJA = 40°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET gate driver applications.

Compared with UCC27524ADRMR and TPS28225DR, LM5112SDX/NOPB uniquely combines 7-A sink current, dual logic inputs, and isolated IN_REF/VEE grounds - making it the only option among the three capable of robust negative-V_GS drive in high-noise, high-reliability power stages.

Availability

LM5112SDX/NOPB is available at Aetrix Electronics and suitable for DC/DC switch-mode power supplies, solar microinverters, and solenoid/motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for LM5112SDX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company designing analog ICs, embedded processors, and power management solutions for industrial, automotive, and communications markets.

The LM5112 product line delivers high-current, high-speed gate drivers for demanding power conversion applications - specifically engineered to reduce switching losses and improve thermal performance in compact, high-frequency SMPS and motor control systems.

FAQ

What is the maximum allowable voltage difference between VCC and IN_REF for LM5112SDX/NOPB?

The maximum recommended voltage difference between VCC and IN_REF is 14 V, as specified in the Absolute Maximum Ratings table. Exceeding this limit risks permanent damage to the input buffer circuitry. The LM5112SDX/NOPB operates reliably within 3.5 V to 14 V (VCC – IN_REF), with UVLO activation occurring below 2.4 V (rising). Designers must maintain this differential within datasheet limits even during transient conditions.

Can LM5112SDX/NOPB drive a high-side MOSFET directly?

No, LM5112SDX/NOPB is designed exclusively as a low-side gate driver and does not include bootstrap or level-shifting circuitry required for high-side operation. Its output swings between VEE and VCC, with VEE intended as the return path for output current - making it unsuitable for driving the source of a high-side N-channel MOSFET. For high-side drive, use a dedicated high-side or half-bridge driver such as TPS28225DR.

How should the exposed thermal pad on the LM5112SDX/NOPB WSON package be connected?

The exposed thermal pad on the LM5112SDX/NOPB must be soldered to a PCB copper pour connected to the VEE net. Per TI's layout guidelines, this connection provides the lowest possible thermal impedance path from die to board, enabling the rated R_θJA of 40°C/W. Do not leave the pad floating or connect it to IN_REF - doing so degrades thermal performance and may cause premature thermal shutdown or reduced lifetime.

Does LM5112SDX/NOPB support both inverting and non-inverting operation simultaneously?

No, LM5112SDX/NOPB supports either inverting or non-inverting mode per application - not both simultaneously. In non-inverting mode, IN is active and INB must be tied to IN_REF; in inverting mode, INB is active and IN must be pulled to VCC. Table 1 in the datasheet confirms only one input controls OUT at a time, with the other serving as a fixed bias reference. Attempting simultaneous drive violates the logic table and may cause undefined output states.

What is the purpose of the IN_REF pin on LM5112SDX/NOPB, and how does it differ from VEE?

The IN_REF pin serves as the ground reference for the logic input buffers (IN and INB), while VEE is the power ground return for the output driver stage. This separation allows LM5112SDX/NOPB to operate with split supplies - e.g., IN_REF tied to controller logic ground (0 V) and VEE connected to –5 V - enabling negative gate drive. Connecting both to the same node restricts operation to single-supply mode but is acceptable for standard positive-only V_GS applications.