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Texas Instruments LM5113QDPRRQ1
- Part No.:
- LM5113QDPRRQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
LM5113QDPRRQ1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10WSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,385
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Product details
Overview
LM5113QDPRRQ1 from Texas Instruments is an AEC-Q100 Grade 1 automotive gate driver IC designed to control enhancement-mode GaN FETs or silicon MOSFETs in half-bridge, synchronous buck, and boost topologies. It delivers 1.2-A peak source / 5-A peak sink output current, features split high-side (HOH/HOL) and low-side (LOH/LOL) outputs for independent turn-on/turn-off strength tuning, and operates with a 90-V high-side floating bias rail up to 100 VDC.
For engineers reviewing the LM5113QDPRRQ1 datasheet, LM5113QDPRRQ1 pinout, LM5113QDPRRQ1 application, or LM5113QDPRRQ1 equivalent, key selection criteria include propagation delay matching (1.5 ns typical), internal 5.2-V HB-to-HS clamp for GaN gate protection, TTL-compatible inputs tolerant to 14 V, and WSON-10 package with exposed thermal pad for high-frequency (>1 MHz) automotive power conversion.
Technical Context
The LM5113QDPRRQ1 integrates a level-shift circuit referenced to the HS node to enable precise timing alignment between high-side and low-side outputs, achieving 1.5 ns typical propagation delay matching. Its bootstrap architecture includes an integrated 100-V-rated diode and internal clamping that regulates HB–HS voltage to 5.2 V (±0.5 V), directly protecting GaN FETs from overvoltage stress during fast switching transients.
Independent TTL logic inputs (HI/LI) drive split outputs-HOH/HOL for high-side and LOH/LOL for low-side-with dedicated pull-up (2.1 Ω) and pull-down (0.6 Ω) paths. Undervoltage lockout (UVLO) monitors both VDD (3.8 V rising threshold) and HB–HS (3.2 V rising threshold), each with 200 mV hysteresis, ensuring safe startup sequencing and fault-safe shutdown.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD supply range | 4.5 V to 5.5 V - powers logic and low-side driver; UVLO activates below 3.8 V to prevent partial FET turn-on |
| HB–HS max voltage | 100 V - supports high-voltage half-bridge operation; clamped internally to 5.2 V for GaN gate safety |
| Peak output current | 1.2-A source / 5-A sink - enables fast GaN FET switching with robust turn-off immunity to dv/dt-induced false triggering |
| Propagation delay | 28 ns typical (HO/LO) - ensures sub-35 ns timing precision across temperature (–40°C to 125°C) |
| Delay matching | 1.5 ns typical - minimizes shoot-through risk in synchronous converters by tightly aligning HO/LO edges |
| Input voltage tolerance | 0 V to 14 V - allows direct interface with 12-V PWM controllers without level-shifting buffers |
| Package | WSON-10 (4.0 mm × 4.0 mm) with exposed thermal pad - enables efficient heat dissipation in compact automotive layouts |
Pinout & Package
LM5113QDPRRQ1 uses a 10-pin WSON package (DPR) with an exposed thermal pad (EP) soldered to PCB ground for thermal management. Pin numbering follows top-view orientation with Pin 1 at top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD (Pin 1) | Positive gate drive supply input | 5-V local power rail; requires 0.1-µF ceramic decoupling capacitor placed adjacent to IC |
| HB (Pin 2) | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; supplies floating bias for high-side driver stage |
| HOH (Pin 3) | High-side turn-on output | Source-current path to GaN FET gate; series resistor adjusts turn-on speed and reduces ringing |
| HOL (Pin 4) | High-side turn-off output | Sink-current path to GaN FET gate; 0.6-Ω internal pulldown ensures robust dv/dt immunity |
| HS (Pin 5) | High-side FET source connection | Reference node for high-side driver; connects to bootstrap capacitor negative terminal and GaN source |
| HI (Pin 6) | High-side control input | TTL-compatible logic input; must be tied to VSS if unused to prevent floating states |
| LI (Pin 7) | Low-side control input | TTL-compatible logic input; independent of HI for flexible PWM or complementary drive schemes |
| VSS (Pin 8) | Ground return | Common reference for all signals except HS; must be low-inductance connection to system ground plane |
| LOL (Pin 9) | Low-side turn-off output | Sink-current path to low-side GaN FET gate; complements LOH for independent turn-off tuning |
| LOH (Pin 10) | Low-side turn-on output | Source-current path to low-side GaN FET gate; 2.1-Ω internal pullup limits overshoot on switch node |
Key Features
| Feature | Design Value |
|---|---|
| Split-gate outputs | Independent HOH/HOL and LOH/LOL terminals allow separate gate resistor placement to optimize EMI, efficiency, and shoot-through margin |
| Integrated 100-V bootstrap diode | Eliminates external diode requirement; reduces BOM count and layout area while maintaining cycle-by-cycle HB charging |
| 5.2-V HB–HS clamp | Prevents GaN gate-source overvoltage during negative HS transients caused by parasitic inductance or fast switching |
| AEC-Q100 Grade 1 qualification | Validated for –40°C to +125°C ambient operation with HBM ±1 kV and CDM ±1.5 kV ESD robustness |
| TTL input compatibility | Accepts 0–14 V logic signals regardless of VDD level - enables direct interfacing with legacy 12-V controllers |
Applications
| Mobile Wireless Chargers | Audio Power Amplifiers |
|---|---|
Use Scenario: High-efficiency resonant wireless power transmitter operating at 100–500 kHz with GaN half-bridge inverters. IC Role / Device Role / Timing Role: Dual-channel gate driver providing matched timing and strong sink capability to minimize dead-time losses and prevent shoot-through. Use Value: Enables >93% system efficiency by supporting fast GaN switching with <28 ns propagation delay and <1.5 ns channel-to-channel skew. |
Use Scenario: Class-D audio amplifier output stage using GaN FETs for wide bandwidth and low THD+N. IC Role / Device Role / Timing Role: Half-bridge driver delivering precise edge alignment and independent turn-on/turn-off control to suppress switching artifacts. Use Value: Reduces audible noise and improves fidelity via 5-A sink current that holds gate low during high dv/dt transitions. |
| Current-Fed Push-Pull Converters | Synchronous Buck Converters |
Use Scenario: Isolated DC–DC converter for automotive battery management systems requiring zero-voltage switching (ZVS). IC Role / Device Role / Timing Role: Gate driver managing complementary high-side/low-side GaN switches with tight propagation matching and bootstrap regulation. Use Value: Ensures reliable ZVS initiation by maintaining consistent timing across temperature and load, enabled by 1.5 ns delay matching. |
Use Scenario: 48-V to 12-V point-of-load converter in ADAS domain controllers with >1 MHz switching frequency. IC Role / Device Role / Timing Role: High-frequency gate driver enabling GaN-based buck topology with minimal gate drive loss and thermal rise. Use Value: Supports >1 MHz operation with low 0.6-Ω pulldown resistance, reducing conduction loss and improving transient response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5113QDPRRQ1 | Automotive-grade (AEC-Q100 Grade 1), 100-V HB rating, integrated bootstrap diode, 5.2-V HB clamp | Designed specifically for GaN FETs in automotive half-bridge/buck converters | Preferred for new automotive designs requiring GaN optimization and functional safety support |
| UCC27211QDRQ1 | Automotive-grade, 120-V HB rating, no integrated bootstrap diode, 6-V HB clamp, higher 4-A sink | Broadly compatible with Si MOSFETs and GaN; lacks internal clamp optimized for GaN VGS,max | Consider when higher HB voltage headroom or external diode flexibility is required; verify GaN gate protection separately |
Compared with UCC27211QDRQ1, LM5113QDPRRQ1 provides tighter GaN-specific protection via its 5.2-V HB clamp and eliminates external diode BOM cost, while UCC27211QDRQ1 offers greater HB voltage margin and higher sink current for demanding Si-MOSFET applications.
Availability
LM5113QDPRRQ1 is available at Aetrix Electronics and suitable for automotive power conversion, GaN-based wireless charging, and high-frequency DC–DC applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q100 compliance.
Supply support for LM5113QDPRRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with deep expertise in automotive-grade reliability and functional safety.
The LM5113QDPRRQ1 belongs to TI's automotive gate driver product line, engineered to enable high-efficiency, high-frequency power conversion using GaN FETs in safety-critical vehicle systems such as ADAS, infotainment, and electrified powertrain subsystems.
FAQ
What is the maximum operating frequency supported by the LM5113QDPRRQ1?
The LM5113QDPRRQ1 is characterized for operation up to several MHz, with verified performance at 800 kHz in typical synchronous buck applications. Its 28 ns typical propagation delay, 1.5 ns delay matching, and 5-A peak sink current enable stable switching beyond 1 MHz when paired with low-Qg GaN FETs and optimized gate resistors.
Does the LM5113QDPRRQ1 require an external bootstrap diode?
No - the LM5113QDPRRQ1 integrates a 100-V-rated bootstrap diode, eliminating the need for an external component. This simplifies layout, reduces BOM count, and improves reliability in automotive environments where board space and component count are critical constraints.
How does the internal 5.2-V HB–HS clamp protect GaN FETs in the LM5113QDPRRQ1?
The LM5113QDPRRQ1 clamps the HB–HS voltage to 5.2 V (typical) to prevent exceeding the maximum gate-source voltage rating (typically 5–6 V) of enhancement-mode GaN FETs. This protection remains active during negative HS transients caused by parasitic inductance, ensuring gate oxide integrity across temperature and load conditions.
Can the LM5113QDPRRQ1 drive silicon MOSFETs as well as GaN FETs?
Yes - the LM5113QDPRRQ1 is fully compatible with silicon MOSFETs. Its TTL-compatible inputs, 1.2-A/5-A drive strength, and split outputs provide flexibility for both GaN and Si devices. However, the 5.2-V HB clamp is specifically tuned for GaN; for Si MOSFETs, users may select higher-clamp alternatives like UCC27211QDRQ1 if needed.
What is the purpose of the split outputs (HOH/HOL and LOH/LOL) in the LM5113QDPRRQ1?
The split outputs in LM5113QDPRRQ1 allow independent adjustment of turn-on and turn-off gate drive strength using external resistors. HOH/LOH control rise time and overshoot; HOL/LOL control fall time and dv/dt immunity. This separation optimizes EMI, efficiency, and shoot-through margin without compromising switching speed.
LM5113QDPRRQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 100 V
- Rise / Fall Time (Typ):
- 7ns, 3.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-WSON (4x4)
LM5113QDPRRQ1 FAQ
1.How can I place an order for LM5113QDPRRQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113QDPRRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113QDPRRQ1 reliable?
The price and inventory of LM5113QDPRRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113QDPRRQ1 is usually 5 days.
3.What payment methods are accepted for LM5113QDPRRQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113QDPRRQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113QDPRRQ1?
LM5113QDPRRQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113QDPRRQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113QDPRRQ1?
For technical support, including LM5113QDPRRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113QDPRRQ1 requirements.
6.How does Aetrix verify that LM5113QDPRRQ1 is sourced from the original manufacturer or authorized distributors?
All LM5113QDPRRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113QDPRRQ1 meets industry standards.
7.What is the process for return or replacement of LM5113QDPRRQ1?
All LM5113QDPRRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with LM5113QDPRRQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113QDPRRQ1 part is unused and in its original packaging.
Return procedure for LM5113QDPRRQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LM5113QDPRRQ1 Tags
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