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Texas Instruments LM5113SDE/NOPB
- Part No.:
- LM5113SDE/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
LM5113SDE/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10WSON
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LM5113SDE/NOPB from Texas Instruments is a high-frequency, dual-channel GaN FET gate driver for synchronous buck and half-bridge topologies. It delivers 1.2-A peak source / 5-A peak sink current, supports up to 90-V HS voltage, features split HO/LO outputs with 0.6-Ω pulldown / 2.1-Ω pullup resistance, and achieves 28-ns typical propagation delay with 1.5-ns matching-enabling MHz-class switching in telecom rectifiers and macro RRU power stages.
For engineers reviewing the LM5113SDE/NOPB datasheet, LM5113SDE/NOPB pinout, LM5113SDE/NOPB application, or LM5113SDE/NOPB equivalent, key selection considerations include bootstrap-clamped 5.2-V HB regulation, TTL-compatible HI/LI inputs (14-V tolerant), independent turnon/turnoff strength adjustment via split outputs, and WSON-10 package thermal performance (RθJA = 37.5°C/W).
Technical Context
The LM5113SDE/NOPB integrates a level-shifted high-side driver with internal bootstrap voltage clamping at 5.2 V (±0.5 V), preventing GaN FET gate-source overvoltage during fast HS node transitions. Its dual independent TTL inputs drive split-output stages: HOH/HOL control high-side GaN turnon/turnoff separately, while LOH/LOL provide matched low-side sourcing/sinking.
Propagation delay matching of 1.5 ns (typ) between HO and LO paths ensures precise dead-time control in high-frequency synchronous converters. The device implements dual UVLO-VDD threshold at 3.8 V (200-mV hysteresis) and HB-to-HS threshold at 3.2 V-enabling robust start-up sequencing and fault-safe shutdown under supply faults.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Max | 90 V - Enables use with GaN FETs in 48-V input telecom and industrial DC/DC systems. |
| IOHL / IOLL | 1.2 A / 5 A peak - Provides strong gate turnon drive and ultra-fast turnoff to suppress dv/dt-induced false triggering. |
| tPLH/tPHL | 28 ns / 26.5 ns (typ) - Supports >1-MHz switching without timing skew limiting loop bandwidth. |
| Delay Matching | 1.5 ns (typ) - Minimizes shoot-through risk in half-bridge configurations requiring tight dead-time control. |
| Rpulldown | 0.6 Ω - Ensures rapid, low-impedance gate discharge critical for GaN's low Qg and high dV/dt immunity. |
| VHB Clamp | 5.2 V (typ) - Internally limits bootstrap rail to protect enhancement-mode GaN FETs rated ≤6-V VGS,max. |
| VDD UVLO | 3.8 V rising threshold - Prevents partial gate drive during brownout, avoiding linear-mode conduction and thermal runaway. |
Pinout & Package
LM5113SDE/NOPB is packaged in a thermally enhanced 10-pin WSON (4.0 mm × 4.0 mm) with exposed pad (EP) soldered to PCB ground for improved heat dissipation (RθJC(bot) = 4.1°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | 5-V gate drive supply input | Local decoupling required with low-ESR/ESL capacitor; powers logic and low-side driver. |
| HB | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; internally clamped to 5.2 V vs HS. |
| HOH | High-side turnon output | Source-current path to GaN gate; series resistor adjusts turnon speed and switch-node ringing. |
| HOL | High-side turnoff output | Sink-current path to GaN gate; low-impedance discharge prevents unintended turnon during high dv/dt. |
| HS | High-side source reference | Connects to bootstrap capacitor negative terminal and GaN source; floats up to 90 V above VSS. |
| HI | High-side TTL input | 14-V tolerant; must be tied to VDD or VSS if unused-never left floating. |
| LI | Low-side TTL input | Independent control; same voltage tolerance and tie-off requirement as HI. |
| LOH | Low-side turnon output | Source path to low-side GaN gate; complements LOL for asymmetric drive strength tuning. |
| LOL | Low-side turnoff output | Sink path to low-side GaN gate; 5-A peak capability ensures fast, reliable turnoff. |
| VSS | Ground return | All signals referenced here; EP must be connected to this ground plane for thermal and EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Split high-side outputs (HOH/HOL) | Enables independent optimization of GaN FET turnon slew rate (via HOH + Rg,on) and turnoff immunity (via HOL + low Rg,off). |
| Internal HB-to-HS clamp | Maintains 5.2-V bootstrap regulation without external Zener, eliminating risk of exceeding GaN VGS,max during transient HS undershoot. |
| TTL-compatible inputs (HI/LI) | Accepts 0–14 V logic regardless of VDD level-directly interfaces with 10-V controllers like LM5025 without level-shifting buffers. |
| Dual UVLO with hysteresis | Prevents erratic operation during brownout: VDD UVLO (3.8 V / 3.6 V) disables both outputs; HB UVLO (3.2 V / 3.0 V) disables only HOL. |
| Fast, matched propagation | 28-ns typical delay with 1.5-ns HO/LO matching ensures precise timing control essential for MHz-class zero-voltage switching (ZVS) designs. |
Applications
| Merchant Telecom Rectifiers | Macro Remote Radio Units (RRU) |
|---|---|
|
Use Scenario: 48-V input, 12-V output, 800-kHz synchronous buck converter powering baseband processing in outdoor telecom cabinets. IC Role / Device Role / Timing Role: Dual-channel GaN gate driver controlling high-side/low-side EPC2001 FETs; provides split outputs for optimized dv/dt control and 1.5-ns delay matching to maintain ZVS across load range. Use Value: Enables >97% efficiency at full load by minimizing switching losses through fast, controlled GaN gate transitions and robust shoot-through prevention. |
Use Scenario: High-density, air-cooled 28-V input DC/DC module supplying RF power amplifiers in 5G macro cell sites. IC Role / Device Role / Timing Role: Half-bridge gate driver operating up to 90-V HS potential; uses internal 5.2-V HB clamp to safeguard GaN FETs during fast HS node transitions in high-dv/dt RF PA bias rails. Use Value: Eliminates need for external bootstrap Zener, reducing BOM count and layout sensitivity while maintaining <1.5-ns HO/LO skew for stable multi-phase interleaving. |
| Closed-Loop Stepper Motor Drives | Merchant DC/DC Converters |
|
Use Scenario: 24-V input, 5-V/3.3-V dual-output buck converter for microstepping controller ICs and position feedback sensors in industrial automation. IC Role / Device Role / Timing Role: High-side/low-side driver for GaN half-bridge; leverages 14-V input tolerance to interface directly with FPGA I/O banks without level shifters. Use Value: Reduces gate drive loop inductance via split outputs and WSON-10 EP grounding-critical for suppressing EMI in motion-control EMI-sensitive environments. |
Use Scenario: 36–75-V input, 12-V output, 1-MHz isolated forward converter in server PSU auxiliary supplies. IC Role / Device Role / Timing Role: Synchronous rectifier driver for secondary-side GaN FETs; uses strong 5-A sink current to rapidly discharge gate during transition to prevent cross-conduction. Use Value: Achieves <500-ps jitter margin on dead-time control due to 1.5-ns propagation matching-essential for maintaining isolation barrier integrity at MHz frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RGET | Includes integrated startup logic, level shifter, and power-off VGS clamp; higher integration but no split outputs. | Better suited for new designs requiring simplified bootstrap management and enhanced reliability during power cycling. | Select LMG1205RGET when bootstrapping complexity or power-cycle robustness outweighs need for independent turnon/turnoff tuning. |
| UCC27611DR | Single-channel, 5-A/5-A symmetric driver; no high-side floating capability or bootstrap circuitry. | Limited to low-side or isolated high-side applications; requires external level-shifting for half-bridge use. | Choose UCC27611DR only for discrete low-side GaN drive or when paired with isolated gate drivers in transformer-coupled topologies. |
Compared with LM5113SDE/NOPB, LMG1205RGET adds startup robustness and eliminates external bootstrap diode requirements but sacrifices independent gate strength control; UCC27611DR offers higher symmetric current but lacks integrated high-side floating architecture-making it unsuitable as a drop-in replacement for half-bridge GaN drive.
Availability
LM5113SDE/NOPB is available at Aetrix Electronics and suitable for merchant telecom rectifiers, macro remote radio units (RRU), and closed-loop stepper motor drives requiring stable component supply, long-term lifecycle support, and traceable GaN driver sourcing.
Supply support for LM5113SDE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on power management, signal chain, and real-time control.
The LM5113SDE/NOPB belongs to TI's high-frequency GaN gate driver product line, engineered specifically for MHz-class power conversion using enhancement-mode GaN FETs in telecom, industrial, and wireless infrastructure applications.
FAQ
What is the maximum high-side voltage rating for LM5113SDE/NOPB?
The LM5113SDE/NOPB supports a maximum HS-to-VSS voltage of 90 V, as specified in the Recommended Operating Conditions table. This enables use with 48-V and 54-V bus systems common in telecom rectifiers and industrial DC/DC converters where GaN FETs operate with high blocking voltage requirements.
Does LM5113SDE/NOPB require an external bootstrap diode?
Yes, LM5113SDE/NOPB requires an external bootstrap diode-TI recommends BAT46, BAT41, or LL4148-with a 20-Ω series resistor to charge the high-side supply on a cycle-by-cycle basis. The device includes internal clamping but does not integrate the bootstrap diode itself.
How does LM5113SDE/NOPB prevent unintended high-side turnon during fast dv/dt transitions?
The LM5113SDE/NOPB prevents unintended turnon via its 0.6-Ω pulldown resistance on HOL output, which provides a low-impedance discharge path for the GaN gate, combined with fast 5-A sink current capability. This actively pulls the gate low during high dv/dt events, suppressing Miller-induced false triggering.
What package type is used for LM5113SDE/NOPB?
LM5113SDE/NOPB uses the WSON-10 (DPR) package: 4.0 mm × 4.0 mm body with exposed thermal pad (EP). This package delivers RθJA = 37.5°C/W and RθJC(bot) = 4.1°C/W, making it suitable for thermally constrained high-power density applications.
Is LM5113SDE/NOPB pin-compatible with LMG1205RGET?
No, LM5113SDE/NOPB is not pin-compatible with LMG1205RGET. While both are GaN gate drivers from TI, LMG1205RGET uses a 16-pin QFN package with different pin assignment, added features (integrated level shifter, startup logic), and no direct pin mapping to LM5113SDE/NOPB's WSON-10 layout.
LM5113SDE/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.76V, 1.89V
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 107 V
- Rise / Fall Time (Typ):
- 7ns, 1.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-WSON (4x4)
LM5113SDE/NOPB FAQ
1.How can I place an order for LM5113SDE/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113SDE/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113SDE/NOPB reliable?
The price and inventory of LM5113SDE/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113SDE/NOPB is usually 5 days.
3.What payment methods are accepted for LM5113SDE/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113SDE/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113SDE/NOPB?
LM5113SDE/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113SDE/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113SDE/NOPB?
For technical support, including LM5113SDE/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113SDE/NOPB requirements.
6.How does Aetrix verify that LM5113SDE/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5113SDE/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113SDE/NOPB meets industry standards.
7.What is the process for return or replacement of LM5113SDE/NOPB?
All LM5113SDE/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5113SDE/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113SDE/NOPB part is unused and in its original packaging.
Return procedure for LM5113SDE/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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