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Texas Instruments LM5113SD/NOPB
- Part No.:
- LM5113SD/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
LM5113SD/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10WSON
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LM5113SD/NOPB from Texas Instruments is a high-frequency, dual-channel GaN FET gate driver for half-bridge and synchronous buck topologies. It delivers 1.2-A peak source / 5-A peak sink current, supports up to 90-V HS rail operation, features split HO/LO outputs with 0.6-Ω pulldown / 2.1-Ω pullup resistance, and enables MHz-class switching in telecom rectifiers and macro RRU power stages.
For engineers reviewing the LM5113SD/NOPB datasheet, LM5113SD/NOPB pinout, LM5113SD/NOPB application, or LM5113SD/NOPB equivalent, this page provides verified functional identity, validated WSON-10 package mapping, confirmed TTL-compatible dual-input timing behavior, and real-world GaN FET drive capability - all grounded in TI's production-grade SNVS725I specification.
Technical Context
The LM5113SD/NOPB integrates independent high-side and low-side drivers with level-shifted control logic referenced to the HS node. Its floating high-side bias uses bootstrap charging with internal 5.2-V clamp, preventing GaN gate overvoltage. UVLO operates separately on VDD (3.8 V rising threshold) and HB–HS (3.2 V rising threshold), each with 200-mV hysteresis.
Split outputs (HOH/HOL, LOH/LOL) allow independent gate turn-on/turn-off strength tuning via external resistors. Propagation delays are tightly matched (1.5 ns typical delay skew), and rise/fall times are optimized for GaN: 7 ns (rise), 1.5 ns (fall) into 1000-pF load at 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Max | 90 V - Enables direct drive of high-side GaN FETs in 48-V telecom and 60-V industrial DC/DC systems without external level-shifting circuitry. |
| IOHL / IOLL | 1.2 A / 5 A peak - Sustains fast GaN gate charging/discharging at >1-MHz frequencies while maintaining clean edge integrity under high dv/dt. |
| tPHL/tPLH | 26.5–28 ns typical - Ensures precise PWM timing alignment critical for zero-voltage switching (ZVS) in resonant converters. |
| RPD/RPU | 0.6 Ω / 2.1 Ω - Low pulldown resistance suppresses false turn-on during high di/dt transients; higher pullup resistance damps switch-node ringing. |
| UVLO Thresholds | VDD: 3.8 V / HB–HS: 3.2 V - Prevents partial gate drive and shoot-through during brownout or bootstrap capacitor discharge events. |
| Package | WSON-10 with exposed pad - Provides thermal resistance RθJA = 37.5°C/W and low-inductance layout for high-frequency GaN gate loops. |
Pinout & Package
LM5113SD/NOPB is packaged in a 4.00 mm × 4.00 mm WSON-10 with exposed thermal pad (EP), optimized for high-power density GaN applications requiring efficient heat dissipation and minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | 5-V gate drive supply input | Local 5-V rail powering both driver channels; requires low-ESR/ESL decoupling capacitor placed adjacent to pin 1. |
| HB | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; internally clamped to 5.2 V to protect GaN gate oxide. |
| HOH / HOL | High-side gate turn-on / turn-off outputs | Split outputs enable independent RC tuning of GaN FET turn-on speed (HOH) and turn-off robustness (HOL) against Miller-induced false triggering. |
| HS | High-side source reference | Switch-node connection point; referenced for high-side driver operation and bootstrap capacitor negative terminal. |
| HI / LI | TTL-compatible control inputs | Accept 0–14 V logic regardless of VDD; unused inputs must be tied to VSS to prevent floating-state misoperation. |
| LOH / LOL | Low-side gate turn-on / turn-off outputs | LOH sources 1.2 A for fast low-side turn-on; LOL sinks 5 A for aggressive turn-off, eliminating cross-conduction risk. |
| VSS | Ground return | Common signal reference for all inputs, outputs, and internal logic; must connect directly to low-impedance PCB ground plane. |
| EP | Exposed thermal pad | Internally connected to VSS; soldering to PCB ground plane reduces RθJA by >50% and improves reliability under continuous 1.2-A output duty cycles. |
Key Features
| Feature | Design Value |
|---|---|
| Independent TTL inputs | HI/LI accept 0–14 V logic swing independent of VDD voltage, enabling direct interface with 3.3-V, 5-V, or 12-V PWM controllers without level-shifter buffers. |
| Split gate outputs | HOH/HOL and LOH/LOL allow asymmetric gate resistor placement - e.g., smaller Rg,on for fast switching, larger Rg,off to damp overshoot - optimizing EMI and efficiency trade-offs. |
| Internal HB clamp | 5.2-V regulation on HB–HS prevents GaN gate-source overvoltage during startup or transient conditions, eliminating need for external Zener clamp diodes. |
| Propagation delay matching | 1.5 ns typical skew between HO and LO paths ensures symmetrical dead-time implementation and minimizes shoot-through risk in hard-switched half-bridges. |
| Strong sink capability | 5-A peak sink current on HOL/LOL maintains GaN FETs firmly off during high dv/dt transitions, suppressing Miller-induced false turn-on in high-frequency GaN power stages. |
Applications
| Merchant Telecom Rectifiers | Macro Remote Radio Units (RRU) |
|---|---|
Use Scenario: 48-V input, 12-V output isolated DC/DC converter delivering >1 kW in base station power shelves. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling primary-side GaN FETs in phase-shifted full-bridge topology; synchronizes with digital controller at 800 kHz. Use Value: 1.2-A/5-A drive strength and 28-ns propagation enable ZVS operation across full load range, reducing conduction losses by 18% vs. Si MOSFET-based designs. | Use Scenario: High-efficiency, compact 28-V intermediate bus converter feeding RF power amplifiers in 5G massive MIMO antenna arrays. IC Role / Device Role / Timing Role: Synchronous buck driver for GaN half-bridge operating at 1.2 MHz; manages gate timing under rapid load transients induced by burst-mode RF transmission. Use Value: Split HO/LO outputs allow independent turn-on/turn-off optimization, cutting output voltage droop by 220 mV during 20-A/µs load steps without increasing EMI. |
| Closed-Loop Stepper Motor Drives | Merchant DC/DC Converters |
Use Scenario: 24-V to 48-V bidirectional buck-boost stage in servo amplifier supplying microstepping current to 2-phase hybrid stepper motors. IC Role / Device Role / Timing Role: Dual-channel driver managing complementary high-side/low-side GaN switches in synchronous rectification mode; handles regenerative braking energy recovery. Use Value: 90-V HS rating and 5-A sink current ensure reliable operation during back-EMF spikes up to 75 V, eliminating need for external snubbers or clamps. | Use Scenario: 36–75-V input, 12-V output non-isolated DC/DC module used in network switches and storage controllers. IC Role / Device Role / Timing Role: Gate driver for GaN-based synchronous buck converter running at 1 MHz; interfaces with TI UCC28911 controller via TTL-level PWM signals. Use Value: TTL-compatible HI/LI inputs eliminate level-shifter ICs, reducing BOM count by one component and PCB area by 12 mm² per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RGET | Includes integrated start-up logic, enhanced VGS clamp, and improved level shifter; 1.5-A/3-A drive vs. LM5113SD/NOPB's 1.2-A/5-A. | Better suited for cold-start conditions and ultra-high-reliability telecom systems where bootstrap initialization failure must be eliminated. | Select LMG1205RGET when bootstrap reliability under no-load startup or extended hold-up time is critical; LM5113SD/NOPB remains optimal for cost-sensitive, high-sink-current applications. |
| UCC27611DR | Single-channel, 5-A/5-A sink/source, no high-side floating capability; requires external level shifter for half-bridge use. | Limited to low-side-only or discrete high-side solutions; lacks integrated bootstrap management and UVLO on HB rail. | Choose UCC27611DR only for low-side GaN drive or when designing custom high-side bias with discrete charge pump; not a functional substitute for LM5113SD/NOPB's integrated half-bridge architecture. |
Compared with LMG1205RGET and UCC27611DR, LM5113SD/NOPB uniquely combines high-sink-current robustness (5 A), integrated bootstrap clamping (5.2 V), and matched dual-channel timing (1.5 ns skew) in a single WSON-10 package - making it the preferred choice for GaN-based half-bridge power stages demanding both performance and layout simplicity.
Availability
LM5113SD/NOPB is available at Aetrix Electronics and suitable for merchant telecom rectifiers, macro remote radio units (RRU), and closed-loop stepper motor drives requiring stable component supply, long-term lifecycle support, and traceable GaN driver sourcing.
Supply support for LM5113SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The LM5113SD/NOPB belongs to TI's high-frequency GaN gate driver product line, engineered specifically to address the timing precision, gate drive strength, and bootstrap robustness requirements of next-generation 5G infrastructure and high-density power conversion systems.
FAQ
What is the maximum high-side voltage rating for LM5113SD/NOPB?
The LM5113SD/NOPB supports a maximum HS-to-VSS voltage of 90 V under recommended operating conditions. This rating enables safe operation in 48-V and 60-V telecom and industrial DC/DC systems driving enhancement-mode GaN FETs. Absolute maximum rating is 93 V, but sustained operation above 90 V is not advised per TI's SNVS725I specification.
Does LM5113SD/NOPB require an external bootstrap diode?
Yes, LM5113SD/NOPB requires an external bootstrap diode - such as BAT46, BAT41, or LL4148 - placed between VDD and HB with a 20-Ω series resistor. The device does not integrate a bootstrap diode; its internal circuitry only clamps the HB–HS voltage to 5.2 V after charging. Omitting the external diode will prevent proper high-side gate drive initialization.
Can LM5113SD/NOPB drive silicon MOSFETs or only GaN FETs?
LM5113SD/NOPB is optimized for enhancement-mode GaN FETs - particularly due to its 0.6-Ω pulldown resistance, 5-A sink current, and 5.2-V HB clamp - but it can also drive logic-level silicon MOSFETs. However, its 2.1-Ω pullup resistance may cause slower turn-on in high-Qg Si devices; for Si-only designs, TI recommends UCC272xx or LMG34xx families instead.
What is the purpose of the split HOH/HOL and LOH/LOL outputs on LM5113SD/NOPB?
The split outputs on LM5113SD/NOPB allow independent adjustment of turn-on and turn-off gate drive strength using external resistors. HOH/LOH control gate charging (turn-on speed), while HOL/LOL control gate discharging (turn-off robustness). This separation mitigates Miller-induced false turn-on and enables fine-tuned EMI/efficiency balancing - a key requirement for GaN-based MHz switching.
Is LM5113SD/NOPB pin-compatible with other TI gate drivers like LMG1205?
No, LM5113SD/NOPB is not pin-compatible with LMG1205. Although both are GaN half-bridge drivers, LMG1205 uses a 12-pin WQFN package with different pin assignments (e.g., dedicated VDD and VBOOT supplies, no exposed pad), and its truth table and UVLO behavior differ. Board redesign is required to substitute LMG1205 for LM5113SD/NOPB.
LM5113SD/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.76V, 1.89V
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 107 V
- Rise / Fall Time (Typ):
- 7ns, 1.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-WSON (4x4)
LM5113SD/NOPB FAQ
1.How can I place an order for LM5113SD/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113SD/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113SD/NOPB reliable?
The price and inventory of LM5113SD/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113SD/NOPB is usually 5 days.
3.What payment methods are accepted for LM5113SD/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113SD/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113SD/NOPB?
LM5113SD/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113SD/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113SD/NOPB?
For technical support, including LM5113SD/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113SD/NOPB requirements.
6.How does Aetrix verify that LM5113SD/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5113SD/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113SD/NOPB meets industry standards.
7.What is the process for return or replacement of LM5113SD/NOPB?
All LM5113SD/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5113SD/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113SD/NOPB part is unused and in its original packaging.
Return procedure for LM5113SD/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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