My Inquiry
My Account
Texas Instruments LM5113SDX/NOPB
- Part No.:
- LM5113SDX/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
LM5113SDX/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10WSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,842
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
LM5113SDX/NOPB from Texas Instruments is a high-frequency half-bridge gate driver IC designed to control enhancement-mode GaN FETs in synchronous buck and half-bridge topologies. It delivers 1.2-A peak source / 5-A peak sink current, supports HS voltage up to 90 V, features split HOH/HOL and LOH/LOL outputs for independent turn-on/turn-off strength tuning, and operates with 28-ns typical propagation delay. It is used in merchant telecom rectifiers and macro remote radio units.
For engineers reviewing the LM5113SDX/NOPB datasheet, LM5113SDX/NOPB pinout, LM5113SDX/NOPB application, or LM5113SDX/NOPB equivalent, key selection considerations include bootstrap-clamped 5.2-V HB regulation, TTL-compatible HI/LI inputs (14-V tolerant), 1.5-ns typical LO/HO delay matching, 0.6-Ω pulldown / 2.1-Ω pullup output resistance, and WSON-10 package thermal performance (RθJA = 37.5°C/W).
Technical Context
The LM5113SDX/NOPB integrates independent level-shifted high-side and low-side drivers referenced to HS and VSS respectively, with internal bootstrap supply clamping at 5.2 V to protect GaN FET gate oxide. Its dual-input TTL logic interface accepts HI and LI signals up to 14 V regardless of VDD level, enabling direct connection to higher-voltage PWM controllers like LM5025.
It implements undervoltage lockout on both VDD (3.8-V rising threshold) and HB–HS (3.2-V rising threshold), each with 200-mV hysteresis, and provides strong sink capability (5-A peak) to suppress unintended turn-on during high dv/dt switching. The split outputs (HOH/HOL, LOH/LOL) allow discrete gate resistor placement for optimized EMI and switching loss trade-offs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Max | 90 V - Enables use with GaN FETs in 48-V bus telecom and RRU applications. |
| IOHL Peak Source | 1.2 A - Sufficient to rapidly charge GaN gate capacitance for MHz-class switching. |
| IOLL Peak Sink | 5 A - Ensures robust turn-off under high di/dt, preventing spurious conduction. |
| tPLH/tPHL Typ | 28 ns / 26.5 ns - Supports >1-MHz operation with minimal dead-time uncertainty. |
| Delay Matching Typ | 1.5 ns - Minimizes shoot-through risk in half-bridge configurations. |
| RPULLUP/RPULLDOWN | 2.1 Ω / 0.6 Ω - Optimized impedance for GaN FETs: fast turn-on with controlled ringing, aggressive turn-off for noise immunity. |
| VHB Clamp | 5.2 V - Internally limits bootstrap voltage to stay within GaN FET VGS,max rating (typically ±6 V). |
Pinout & Package
The LM5113SDX/NOPB is packaged in a 10-pin WSON (DPR) with 4.00 mm × 4.00 mm body size and exposed thermal pad (EP) for enhanced thermal dissipation. The package is RoHS-compliant and lead-free (NOPB suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | 5-V Gate Drive Supply Input | Power rail for low-side and logic circuitry; requires local 0.1-µF low-ESR decoupling to VSS. |
| HB | High-Side Bootstrap Rail | Connects to positive terminal of bootstrap capacitor; internally clamped to 5.2 V above HS. |
| HOH | High-Side Turn-On Output | Source-current path to GaN FET gate; series resistor adjusts dV/dt and EMI. |
| HOL | High-Side Turn-Off Output | Sink-current path to GaN FET gate; low 0.6-Ω impedance ensures fast, noise-immune discharge. |
| HS | High-Side Source Reference | Switch-node connection point; referenced for HO outputs and bootstrap capacitor negative terminal. |
| HI | High-Side Control Input | TTL-compatible input (2.06-V rise threshold); must be tied to VSS if unused to prevent floating. |
| LI | Low-Side Control Input | TTL-compatible input (2.06-V rise threshold); same biasing requirement as HI. |
| VSS | Ground Return | Common reference for all signals except HS-referenced outputs; connects to PCB ground plane. |
| LOL | Low-Side Turn-Off Output | Sink-current path to low-side GaN FET gate; complements LOH for independent timing control. |
| LOH | Low-Side Turn-On Output | Source-current path to low-side GaN FET gate; 2.1-Ω pullup enables controlled turn-on edge. |
| EP | Exposed Thermal Pad | Internally connected to VSS; must be soldered to PCB ground plane for thermal and EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Split high-side outputs (HOH/HOL) | Enables independent optimization of GaN FET turn-on slew rate (via HOH resistor) and turn-off robustness (via HOL low impedance). |
| Bootstrap voltage clamp | Maintains HB–HS at 5.2 V typical, eliminating external Zener and ensuring safe VGS stress on enhancement-mode GaN devices. |
| TTL-compatible inputs with 14-V tolerance | Allows direct interfacing with 5-V, 10-V, or 12-V PWM controllers (e.g., LM5025) without level-shifting buffers. |
| Dual UVLO with hysteresis | Prevents partial FET turn-on by disabling outputs when VDD < 3.8 V or HB–HS < 3.2 V, each with 200-mV hysteresis for noise immunity. |
| 1.5-ns typical LO/HO propagation delay matching | Reduces minimum required dead time in half-bridge designs, increasing effective duty cycle range and efficiency. |
Applications
| Merchant Telecom Rectifier | Macro Remote Radio Unit (RRU) |
|---|---|
Use Scenario: High-efficiency 48-V input AC/DC front-end supplying baseband processing and RF power amplifiers. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling GaN FETs in interleaved LLC or phase-shifted full-bridge topology. Use Value: 5-A sink current prevents false turn-on during rapid 48-V bus transients; 28-ns propagation enables precise timing control at >500-kHz switching. | Use Scenario: Compact, thermally constrained outdoor RF power stage converting -48-V DC to RF amplifier supply rails. IC Role / Device Role / Timing Role: High-side/low-side driver for GaN half-bridge in envelope-tracking or Doherty amplifier stages. Use Value: WSON-10 exposed pad and 37.5°C/W RθJA support continuous operation at 85°C ambient; 90-V HS rating accommodates voltage spikes in RF load mismatch events. |
| Closed-Loop Stepper Motor Drive | Merchant DC/DC Converter |
Use Scenario: Precision motion control system requiring microstepping with low acoustic noise and high torque at standstill. IC Role / Device Role / Timing Role: Gate driver for GaN-based H-bridge in current-controlled chopper drive. Use Value: Independent HOH/HOL and LOH/LOL outputs allow asymmetric gate timing to reduce current ripple and motor vibration. | Use Scenario: High-density 12-V or 24-V intermediate bus converter delivering 50–200 W to server or networking ASICs. IC Role / Device Role / Timing Role: Driver for GaN half-bridge in synchronous buck or buck-boost topology. Use Value: 1.2-A/5-A drive strength supports fast GaN switching up to 2 MHz, reducing magnetics size and improving transient response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency GaN half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RGET | Includes integrated startup logic, level shifter, and power-off VGS clamp; no external bootstrap diode required. | Better suited for systems requiring robust start-up sequencing and enhanced fault protection. | Select LMG1205RGET when bootstrap diode omission and improved reliability under brown-out conditions are prioritized over cost and board space. |
| UCC27611DR | Single-channel, 5-A/5-A symmetric driver with 1.8-ns delay matching; no high-side floating bias or bootstrap circuitry. | Requires external high-side level-shifting solution (e.g., transformer or isolated gate driver) for half-bridge use. | Select UCC27611DR only in low-side-only or externally level-shifted configurations where independent channel control and ultra-low delay skew are critical. |
Compared with LMG1205RGET, LM5113SDX/NOPB offers lower BOM count for bootstrap-based designs but lacks integrated startup logic; compared with UCC27611DR, it provides native high-side floating drive but trades off some delay precision for integrated bias generation.
Availability
LM5113SDX/NOPB is available at Aetrix Electronics and suitable for merchant telecom rectifiers, macro remote radio units, and closed-loop stepper motor drives requiring stable component supply across industrial temperature ranges (–40°C to +125°C).
Supply support for LM5113SDX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and digital signal processing technologies.
The LM5113SDX/NOPB belongs to TI's high-speed GaN gate driver product line, engineered specifically for MHz-class switching in telecom, wireless infrastructure, and industrial power conversion where GaN FETs demand precise, robust, and low-inductance gate control.
FAQ
What is the maximum allowable HS-to-VSS voltage for LM5113SDX/NOPB?
The absolute maximum HS-to-VSS voltage for LM5113SDX/NOPB is 93 V, while the recommended operating maximum is 90 V per the datasheet's Recommended Operating Conditions table. Exceeding 90 V in normal operation risks violating the device's safe operating area and may degrade long-term reliability, especially under high-temperature or high-dv/dt conditions. The LM5113SDX/NOPB is rated for GaN FETs in 48-V and 54-V bus systems with margin for transient spikes.
Does LM5113SDX/NOPB require an external bootstrap diode?
Yes, LM5113SDX/NOPB requires an external bootstrap diode-such as BAT46, BAT41, or LL4148-with a recommended 20-Ω series resistor-to charge the bootstrap capacitor on a cycle-by-cycle basis. Unlike newer alternatives like LMG1205, the LM5113SDX/NOPB does not integrate bootstrap diode functionality, making this external component mandatory for high-side bias generation in half-bridge operation.
What is the purpose of the split outputs (HOH/HOL and LOH/LOL) in LM5113SDX/NOPB?
The split outputs in LM5113SDX/NOPB-HOH/HOL for high-side and LOH/LOL for low-side-enable independent adjustment of turn-on and turn-off gate drive strength. HOH and LOH provide 2.1-Ω pullup paths for controlled turn-on edges, while HOL and LOL offer 0.6-Ω pulldown paths for fast, noise-immune turn-off. This separation allows designers to optimize EMI, switching losses, and shoot-through immunity separately for each transition using discrete gate resistors.
Can LM5113SDX/NOPB drive silicon MOSFETs, or is it limited to GaN FETs?
LM5113SDX/NOPB can drive both enhancement-mode GaN FETs and standard silicon MOSFETs, though its output resistance (0.6 Ω pulldown / 2.1 Ω pullup) and 5.2-V HB clamp are specifically optimized for GaN's lower Qg, faster switching, and tighter VGS limits. When driving silicon MOSFETs, the 5-A sink capability remains beneficial for fast turn-off, but the 5.2-V clamp may limit gate overdrive in applications requiring >6-V VGS for lowest RDS(on).
What thermal performance can be expected from the WSON-10 package of LM5113SDX/NOPB?
The LM5113SDX/NOPB in WSON-10 (DPR) package has a junction-to-ambient thermal resistance (RθJA) of 37.5°C/W under standard JEDEC test conditions with a 2-layer board and 1-in² copper pour. With proper PCB layout-including soldering the exposed thermal pad (EP) to a solid ground plane-the device sustains continuous operation at 125°C junction temperature in ambient temperatures up to 85°C, supporting high-power density telecom and RRU designs.
LM5113SDX/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.76V, 1.89V
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 107 V
- Rise / Fall Time (Typ):
- 7ns, 1.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-WSON (4x4)
LM5113SDX/NOPB FAQ
1.How can I place an order for LM5113SDX/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113SDX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113SDX/NOPB reliable?
The price and inventory of LM5113SDX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113SDX/NOPB is usually 5 days.
3.What payment methods are accepted for LM5113SDX/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113SDX/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113SDX/NOPB?
LM5113SDX/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113SDX/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113SDX/NOPB?
For technical support, including LM5113SDX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113SDX/NOPB requirements.
6.How does Aetrix verify that LM5113SDX/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5113SDX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113SDX/NOPB meets industry standards.
7.What is the process for return or replacement of LM5113SDX/NOPB?
All LM5113SDX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5113SDX/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113SDX/NOPB part is unused and in its original packaging.
Return procedure for LM5113SDX/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LM5113SDX/NOPB Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
