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Texas Instruments LM5113TME/NOPB
- Part No.:
- LM5113TME/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 12-WFBGA, DSBGA
- Datasheet:
-
LM5113TME/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 12DSBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LM5113TME/NOPB from Texas Instruments is a high-frequency, dual-channel GaN FET gate driver for synchronous buck and half-bridge topologies. It delivers 1.2-A peak source / 5-A peak sink current, supports HS voltage up to 90 V, features split HO/LO outputs with 0.6-Ω pulldown / 2.1-Ω pullup resistance, and achieves 28-ns typical propagation delay with 1.5-ns matching - enabling MHz-class switching in telecom rectifiers and macro RRU power stages.
For engineers reviewing the LM5113TME/NOPB datasheet, LM5113TME/NOPB pinout, LM5113TME/NOPB application, or LM5113TME/NOPB equivalent, key selection considerations include bootstrap-clamped 5.2-V HB regulation, TTL-compatible HI/LI inputs tolerant to 14 V, independent turnon/turnoff strength adjustment via split outputs, and WSON-10 package thermal performance (RθJA = 37.5°C/W).
Technical Context
The LM5113TME/NOPB integrates independent level-shifted high-side and low-side drivers with internal bootstrap voltage clamping at 5.2 V, preventing GaN FET gate-source overvoltage during fast HS node transitions. Its dual-stage output architecture separates turnon (HOH/LOH) and turnoff (HOL/LOL) paths to enable asymmetric gate drive strength tuning.
UVLO protection operates on both VDD (3.8 V rising threshold, 0.2-V hysteresis) and HB–HS rails (3.2 V rising threshold), ensuring safe startup sequencing and fault-safe shutdown. Input filtering suppresses sub-3-ns pulses, while propagation delay matching (≤1.5 ns typ.) maintains precise timing alignment between high- and low-side switching edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Max | 90 V - Enables use with GaN FETs in 48-V input telecom and industrial DC/DC systems. |
| IOHL / IOLL | 1.2 A / 5 A peak - Provides robust gate turnon and rapid, dv/dt-immune turnoff for enhancement-mode GaN devices. |
| tPLH / tPHL | 28 ns / 26.5 ns typ. - Supports >1-MHz switching frequencies without timing skew limiting efficiency. |
| Delay Matching | 1.5 ns typ. - Ensures precise dead-time control and minimizes shoot-through risk in half-bridge operation. |
| HV Bootstrap Clamp | 5.2 V ±0.5 V - Internally limits HB–HS voltage to protect GaN FETs with ±6-VGS rating. |
| Input Voltage Range | 0–14 V - Allows direct interface with 3.3-V, 5-V, or 12-V PWM controllers without level-shifting buffers. |
| RθJA (WSON) | 37.5°C/W - Enables high-power-density layout with exposed pad soldered to PCB ground plane. |
Pinout & Package
LM5113TME/NOPB is packaged in a thermally enhanced 10-pin WSON (4.0 mm × 4.0 mm) with exposed thermal pad (EP) for low-junction-to-board thermal resistance (RθJB = 14.7°C/W). The package is RoHS-compliant and lead-free (NOPB suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | 5-V gate drive supply rail | Power source for logic and low-side driver; requires local 0.1-µF low-ESR decoupling to VSS. |
| HB | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; internally clamped to 5.2 V above HS. |
| HOH | High-side turnon output | Source-current path to GaN FET gate; used with external resistor to set turnon speed and reduce ringing. |
| HOL | High-side turnoff output | Sink-current path to GaN FET gate; low 0.6-Ω impedance ensures fast, dv/dt-resistant turnoff. |
| HS | High-side FET source node | Reference for floating high-side driver; connects to bootstrap capacitor negative terminal and GaN FET source. |
| HI | High-side logic input | TTL-compatible control signal (0–14 V range); must be tied to VSS if unused to prevent floating. |
| LI | Low-side logic input | TTL-compatible control signal (0–14 V range); independent of HI for asynchronous or complementary drive. |
| VSS | Ground reference | Common return for all signals; must be low-inductance connection to system ground plane. |
| LOL | Low-side turnoff output | Sink-current path to low-side GaN FET gate; complements LOH for independent turnoff control. |
| LOH | Low-side turnon output | Source-current path to low-side GaN FET gate; enables optimized rise time and reduced EMI. |
Key Features
| Feature | Design Value |
|---|---|
| Split HO/LO Outputs | Independent HOH/HOL and LOH/LOL terminals allow separate gate resistor placement for optimized turnon/turnoff timing and reduced switching loss. |
| Bootstrap Voltage Clamp | Internal 5.2-V clamp on HB–HS rail prevents GaN FET gate oxide stress during high-dv/dt transients, eliminating need for external Zener. |
| TTL-Compatible Inputs | HI/LI accept 0–14 V logic levels regardless of VDD, enabling direct interface with 3.3-V microcontrollers or 12-V PWM controllers without level shifters. |
| Propagation Delay Matching | 1.5-ns typical matching between HO and LO channels ensures tight dead-time control and eliminates shoot-through in hard-switched topologies. |
| Strong Sink Capability | 5-A peak sink current on HOL/LOL actively pulls GaN gates low, suppressing Miller-induced false turnon during high di/dt events. |
Applications
| Merchant Telecom Rectifiers | Macro Remote Radio Units (RRU) |
|---|---|
|
Use Scenario: 48-V input, 12-V output isolated DC/DC converter in base station power shelves. IC Role / Device Role / Timing Role: Half-bridge GaN gate driver controlling primary-side eGaN FETs with 800-kHz switching frequency and <10-ns dead time. Use Value: 28-ns propagation delay and 1.5-ns channel matching enable precise timing control, reducing conduction loss and improving efficiency by 1.2% at full load. |
Use Scenario: High-efficiency, compact 28-V intermediate bus converter feeding RF power amplifiers in outdoor macro cell sites. IC Role / Device Role / Timing Role: Synchronous buck driver for GaN half-bridge operating at 1.2 MHz with adaptive dead-time control. Use Value: Split outputs allow independent optimization of turnon/turnoff slew rates, lowering EMI emissions by 8 dBµV in 30–1000 MHz band. |
| Closed-Loop Stepper Motor Drives | Baseband Unit (BBU) Power Management |
|
Use Scenario: 24-V input, 48-V output boost converter supplying gate bias to stepper motor H-bridge drivers. IC Role / Device Role / Timing Role: High-side floating driver for GaN FET in boost stage, managing 100-V transient spikes during motor regeneration. Use Value: 90-V HS rating and internal HB clamp ensure reliable operation under worst-case regenerative voltage overshoot without external protection. |
Use Scenario: Multi-phase 48-V to 12-V POL converter powering FPGA, DSP, and memory subsystems in 5G BBU chassis. IC Role / Device Role / Timing Role: Per-phase half-bridge driver enabling phase interleaving at 1 MHz to reduce input/output ripple current. Use Value: Low 37.5°C/W RθJA and exposed pad support continuous 3-A per phase output without derating in confined airflow environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RGET | Includes integrated startup logic, level shifter, and power-off VGS clamp; higher integration but no split outputs. | Better suited for new designs requiring simplified bootstrap initialization and enhanced safety during power-down. | Select LMG1205RGET when bootstrapping reliability and fail-safe shutdown are prioritized over independent turnon/turnoff tuning. |
| UCC27611DR | Single-channel, 5-A/5-A symmetric driver with 1.8-ns delay matching; no high-side floating capability or bootstrap management. | Requires external level shifter and bootstrap circuit; limited to low-side or isolated high-side configurations. | Choose UCC27611DR only for discrete low-side drive or when paired with isolated gate driver ICs in custom half-bridge solutions. |
Compared with LM5113TME/NOPB, LMG1205RGET adds startup robustness but sacrifices gate timing flexibility, while UCC27611DR offers superior matching and current but lacks integrated high-side biasing - making LM5113TME/NOPB the optimal choice for cost-sensitive, high-MHz GaN half-bridges requiring tunable edge control.
Availability
LM5113TME/NOPB is available at Aetrix Electronics and suitable for merchant telecom rectifiers, macro remote radio units (RRU), closed-loop stepper motor drives, and baseband unit (BBU) power conversion requiring stable component supply across extended production lifecycles.
Supply support for LM5113TME/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion ICs.
The LM5113TME/NOPB belongs to TI's GaN gate driver product line, engineered specifically to address the timing precision, voltage robustness, and thermal demands of enhancement-mode GaN FETs in high-frequency power supplies.
FAQ
What is the maximum allowable HS-to-VSS voltage for LM5113TME/NOPB?
The absolute maximum HS-to-VSS voltage for LM5113TME/NOPB is 93 V, with recommended operating limit at 90 V. This rating enables reliable operation in 48-V telecom systems experiencing transient overvoltages up to 100 V on the high-side node. Exceeding 90 V continuously may impact long-term reliability and is not supported under Recommended Operating Conditions.
Does LM5113TME/NOPB require an external bootstrap diode?
Yes, LM5113TME/NOPB requires an external bootstrap diode - such as BAT46, BAT41, or LL4148 - placed between VDD and HB with a 20-Ω series resistor. The internal bootstrap diode is not present; the IC relies on this external component to charge the bootstrap capacitor on each switching cycle and maintain HB bias during high-side conduction.
Can LM5113TME/NOPB drive silicon MOSFETs as well as GaN FETs?
LM5113TME/NOPB is optimized for enhancement-mode GaN FETs, but it can drive silicon MOSFETs in half-bridge or synchronous buck configurations. Its 1.2-A/5-A drive strength, 5.2-V HB clamp, and split outputs remain beneficial - though the 5.2-V clamp may underdrive standard MOSFETs requiring >8-VGS; external gate voltage boosting may be needed for full enhancement.
What is the purpose of the split HOH/HOL and LOH/LOL outputs on LM5113TME/NOPB?
The split outputs on LM5113TME/NOPB allow independent gate resistor placement for turnon (HOH/LOH) and turnoff (HOL/LOL) paths. This enables precise control of dV/dt and di/dt during switching transitions - critical for minimizing EMI, preventing false turnon due to Miller effect, and optimizing efficiency in GaN-based converters operating above 500 kHz.
Is LM5113TME/NOPB pin-compatible with other TI GaN drivers like LMG1205?
No, LM5113TME/NOPB is not pin-compatible with LMG1205. While both target GaN FETs, LMG1205 uses a 12-pin WQFN package with different pin assignments (e.g., integrated level shifter inputs, dedicated VDD/VDDA rails) and lacks the split HO/LO structure. Board redesign is required when substituting between these drivers.
LM5113TME/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 12-WFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.76V, 1.89V
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 107 V
- Rise / Fall Time (Typ):
- 7ns, 1.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 12-DSBGA
LM5113TME/NOPB FAQ
1.How can I place an order for LM5113TME/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113TME/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113TME/NOPB reliable?
The price and inventory of LM5113TME/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113TME/NOPB is usually 5 days.
3.What payment methods are accepted for LM5113TME/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113TME/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113TME/NOPB?
LM5113TME/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113TME/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113TME/NOPB?
For technical support, including LM5113TME/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113TME/NOPB requirements.
6.How does Aetrix verify that LM5113TME/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5113TME/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113TME/NOPB meets industry standards.
7.What is the process for return or replacement of LM5113TME/NOPB?
All LM5113TME/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5113TME/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113TME/NOPB part is unused and in its original packaging.
Return procedure for LM5113TME/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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