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Texas Instruments LM5113TMX/NOPB
- Part No.:
- LM5113TMX/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 12-WFBGA
- Datasheet:
-
LM5113TMX/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 12USMD
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LM5113TMX/NOPB from Texas Instruments is a high-frequency, dual-channel GaN FET gate driver for synchronous buck and half-bridge topologies. It delivers 1.2-A peak source / 5-A peak sink current, supports up to 90-V HS voltage, features split HO/LO outputs with 0.6-Ω pulldown / 2.1-Ω pullup resistance, and achieves 28-ns typical propagation delay with 1.5-ns matching - enabling MHz-class switching in telecom rectifiers and macro RRU power stages.
For engineers reviewing the LM5113TMX/NOPB datasheet, LM5113TMX/NOPB pinout, LM5113TMX/NOPB application, or LM5113TMX/NOPB equivalent, key selection considerations include bootstrap-clamped 5.2-V HB regulation, TTL-compatible HI/LI inputs (14-V tolerant), independent turnon/turnoff strength tuning via split outputs, and WSON-10 package thermal performance (RθJA = 37.5°C/W).
Technical Context
The LM5113TMX/NOPB integrates independent level-shifted high-side and low-side drivers referenced to HS and VSS respectively, with internal bootstrap supply clamping at 5.2 V to protect GaN FETs. Its TTL-input architecture accepts 0–14 V logic regardless of VDD, and UVLO thresholds (VDD: 3.8 V, HB: 3.2 V) ensure safe startup and fault recovery.
Split gate outputs (HOH/HOL, LOH/LOL) enable discrete control of rise/fall dynamics: HOH/LOH drive turnon with 2.1-Ω effective pullup; HOL/LOL drive turnoff with 0.6-Ω pulldown. Propagation delay matching (≤1.5 ns typ.) and sub-10-ns edge times support precise timing-critical GaN switching in closed-loop stepper drives and baseband units.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Max | 90 V - Enables use with high-voltage GaN FETs in 48-V telecom and industrial DC/DC systems. |
| IOH Peak | 1.2 A - Sufficient gate charge delivery for fast turnon of enhancement-mode GaN devices. |
| IOL Peak | 5 A - Robust sink capability prevents unintended turnon during high dv/dt transients. |
| tPHL/tPLH | 26.5–28 ns typ. - Supports >1-MHz switching without timing skew limiting efficiency. |
| Delay Matching | 1.5 ns typ. - Ensures tight synchronization between high-side and low-side edges for clean dead-time control. |
| VHB Clamp | 5.2 V ±0.5 V - Internally limits bootstrap voltage to stay within GaN FET VGS(max) rating. |
| VDD UVLO | 3.8 V rising threshold - Prevents partial gate drive during brownout, avoiding shoot-through risk. |
Pinout & Package
The LM5113TMX/NOPB is packaged in a thermally enhanced 10-pin WSON (4.0 mm × 4.0 mm) with exposed pad (EP) for PCB ground connection and improved heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | 5-V gate drive supply input | Local decoupling required with low-ESR capacitor; powers low-side and logic circuitry. |
| HB | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; internally clamped at 5.2 V. |
| HOH | High-side turnon output | Drives GaN FET gate during turnon; series resistor adjusts rise time and reduces ringing. |
| HOL | High-side turnoff output | Actively pulls gate low during turnoff; 0.6-Ω pulldown ensures fast, robust discharge. |
| HS | High-side source reference | Connects to bootstrap cap negative terminal and GaN FET source; floats with switch node. |
| HI | High-side TTL input | Logic-compatible (2.06 V threshold); must be tied to VDD or VSS if unused - never left floating. |
| LI | Low-side TTL input | Independent of HI; same 14-V tolerance and hysteresis; enables asymmetric PWM control. |
| VSS | Ground return | Reference for all low-side signals and VDD supply; requires low-inductance PCB connection. |
| LOL | Low-side turnoff output | Sink path for low-side GaN FET; complements LOH for independent edge shaping. |
| LOH | Low-side turnon output | Source path for low-side GaN FET; 2.1-Ω pullup balances speed vs. overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Split gate outputs | Independent HOH/HOL and LOH/LOL pins allow separate optimization of turnon/turnoff slew rates for EMI and efficiency tradeoffs. |
| Bootstrap voltage clamp | Internal 5.2-V regulation protects GaN FETs from overvoltage stress during transient conditions or layout-induced overshoot. |
| TTL-compatible inputs | HI/LI accept 0–14 V logic levels regardless of VDD, enabling direct interface with 3.3-V, 5-V, or 12-V controllers without level shifters. |
| Propagation delay matching | 1.5 ns typical difference between HO and LO paths ensures minimal timing skew in high-frequency half-bridge operation. |
| Strong sink capability | 5-A peak sink current on HOL/LOL maintains gate in low state under high dv/dt noise, preventing false turnon in GaN applications. |
Applications
| Merchant Telecom Rectifiers | Macro Remote Radio Units (RRU) |
|---|---|
Use Scenario: High-efficiency 48-V input to 12-V/24-V intermediate bus conversion in distributed base station power systems. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling GaN FETs in synchronous buck stage; provides MHz-level switching with matched timing for zero-voltage switching (ZVS) implementation. Use Value: Enables >97% efficiency at 1-MHz switching by minimizing gate drive losses and supporting fast GaN transitions with controlled dV/dt. | Use Scenario: Compact, high-power-density DC/DC conversion feeding RF power amplifiers in outdoor macro cell sites. IC Role / Device Role / Timing Role: Dual-channel GaN driver managing high-side/low-side switching in isolated half-bridge topology; handles 90-V HS transients common in battery-backed RRU designs. Use Value: Delivers reliable operation across –40°C to +125°C ambient with integrated UVLO and bootstrap clamping, reducing external protection components. |
| Closed-Loop Stepper Motor Drives | Baseband Units (BBU) |
Use Scenario: Precision microstepping control in industrial automation where torque ripple and thermal management are critical. IC Role / Device Role / Timing Role: Gate driver for GaN-based H-bridge inverters; uses split outputs to independently tune rise/fall times for optimal current loop response. Use Value: Reduces motor heating and audible noise through tightly controlled switching edges and <1.5-ns channel-to-channel delay matching. | Use Scenario: Point-of-load (POL) regulation for FPGA, ASIC, and memory subsystems in 5G infrastructure equipment. IC Role / Device Role / Timing Role: High-speed gate driver in multiphase buck converters; interfaces with digital PWM controllers via TTL inputs tolerant to 14-V overshoot. Use Value: Supports dynamic voltage scaling and fast load transient response due to 28-ns propagation and low-output impedance (0.6 Ω pulldown). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RGET | Includes integrated start-up logic, level shifter, and power-off VGS clamp; higher integration than LM5113TMX/NOPB. | Designed for simplified GaN system bring-up; eliminates need for external bootstrap diode and improves reliability during power cycling. | Preferred for new designs requiring reduced BOM count and enhanced robustness; not pin-compatible with LM5113TMX/NOPB. |
| UCC27611DR | Single-channel, 5-A sink / 2.5-A source driver with 10-V UVLO; no bootstrap or high-side floating capability. | Limited to low-side or isolated high-side configurations only; requires external level-shifting for half-bridge use. | Applicable only when paired with isolated gate drivers or transformer-based level shifters; lacks integrated high-side bias generation. |
Compared with LMG1205RGET and UCC27611DR, the LM5113TMX/NOPB offers dedicated high-side bootstrap operation and split outputs for independent edge control - making it uniquely suited for cost-sensitive, high-frequency GaN half-bridge designs where external component count is acceptable and timing precision is critical.
Availability
LM5113TMX/NOPB is available at Aetrix Electronics and suitable for merchant telecom rectifiers, macro remote radio units (RRU), and closed-loop stepper motor drives requiring stable component supply, long-term manufacturability, and qualified GaN gate drive performance.
Supply support for LM5113TMX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.
The LM5113 product line targets high-efficiency, high-frequency power conversion using wide-bandgap GaN FETs - specifically engineered to overcome gate drive challenges in MHz-class buck, half-bridge, and LLC resonant topologies.
FAQ
What is the maximum high-side voltage rating for the LM5113TMX/NOPB?
The LM5113TMX/NOPB supports a maximum HS-to-VSS voltage of 90 V under recommended operating conditions. This rating enables its use with GaN FETs in 48-V and 54-V telecom and industrial DC/DC systems. Absolute maximum rating is 93 V, but design margin should be maintained per TI's recommended operating conditions table.
Does the LM5113TMX/NOPB require an external bootstrap diode?
Yes, the LM5113TMX/NOPB requires an external bootstrap diode (e.g., BAT46, BAT41, or LL4148) with a 20-Ω series resistor to charge the high-side supply on a cycle-by-cycle basis. The device does not integrate a bootstrap diode, though it does include internal clamping of the HB rail to 5.2 V.
Can the LM5113TMX/NOPB drive silicon MOSFETs, or is it limited to GaN FETs?
The LM5113TMX/NOPB can drive both enhancement-mode GaN FETs and standard silicon MOSFETs. Its 1.2-A/5-A drive strength, split outputs, and 5.2-V HB clamp are optimized for GaN, but the electrical specifications (e.g., output voltage swing, propagation delay, UVLO thresholds) remain valid for Si MOSFETs in half-bridge or synchronous buck configurations.
What is the purpose of the split HOH/HOL and LOH/LOL outputs on the LM5113TMX/NOPB?
The split outputs on the LM5113TMX/NOPB allow independent adjustment of turnon and turnoff strength: HOH/LOH provide source current (2.1-Ω effective pullup) for controlled rise times, while HOL/LOL provide sink current (0.6-Ω pulldown) for fast, noise-immune fall times. This enables fine-tuning of dV/dt, EMI, and shoot-through immunity without compromising switching speed.
Is the LM5113TMX/NOPB pin-compatible with the LMG1205RGET?
No, the LM5113TMX/NOPB is not pin-compatible with the LMG1205RGET. While both are GaN gate drivers from Texas Instruments, the LMG1205RGET uses a different pinout (16-pin QFN), integrates additional functions (start-up logic, level shifter), and has distinct power and ground arrangements. Migration requires PCB redesign and firmware validation.
LM5113TMX/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 12-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.76V, 1.89V
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 107 V
- Rise / Fall Time (Typ):
- 7ns, 1.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 12-DSBGA
LM5113TMX/NOPB FAQ
1.How can I place an order for LM5113TMX/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5113TMX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5113TMX/NOPB reliable?
The price and inventory of LM5113TMX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5113TMX/NOPB is usually 5 days.
3.What payment methods are accepted for LM5113TMX/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5113TMX/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5113TMX/NOPB?
LM5113TMX/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5113TMX/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5113TMX/NOPB?
For technical support, including LM5113TMX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5113TMX/NOPB requirements.
6.How does Aetrix verify that LM5113TMX/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5113TMX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5113TMX/NOPB meets industry standards.
7.What is the process for return or replacement of LM5113TMX/NOPB?
All LM5113TMX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5113TMX/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5113TMX/NOPB part is unused and in its original packaging.
Return procedure for LM5113TMX/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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