Texas Instruments LM5114AMF/NOPB
- Part No.:
- LM5114AMF/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- SOT-23-6
- Datasheet:
-
LM5114AMF/NOPB.pdf
- Description:
- IC GATE DRVR LOW-SIDE SOT23-6
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
LM5114AMF/NOPB from Texas Instruments is a single-channel, low-side gate driver IC designed to drive enhancement-mode GaN FETs and N-channel MOSFETs in high-frequency power converters. It delivers 7.6-A peak sink and 1.3-A peak source current, operates from 4-V to 12.6-V supply, features independent P_OUT/N_OUT outputs for adjustable turn-on/turn-off strength, and supports TTL/CMOS logic inputs up to 14 V - enabling direct interface with PWM controllers in boost, flyback, and isolated synchronous rectifier applications.
For engineers reviewing the LM5114AMF/NOPB datasheet, LM5114AMF/NOPB pinout, LM5114AMF/NOPB application, or LM5114AMF/NOPB equivalent, key selection considerations include its split-output architecture for independent gate impedance control, UVLO with 3.25-V threshold and 0.4-V hysteresis, 12-ns typical propagation delay, 0.23-Ω pulldown resistance at 10 V, and compatibility with fast-switching GaN devices requiring sub-10-ns rise/fall times under 10,000-pF load.
Technical Context
The LM5114AMF/NOPB implements a dual-output, non-overlapping gate drive architecture with separate open-drain P_OUT (source) and N_OUT (sink) terminals, allowing independent optimization of turn-on and turn-off slew rates via external gate resistors. Its input stage accepts TTL/CMOS logic levels and withstands 14-V input voltage regardless of VDD, eliminating level-shifting requirements.
An integrated UVLO circuit disables outputs and activates an internal clamp transistor when VDD falls below 3.25 V, holding N_OUT ≤ 0.85 V during power-down to prevent unintended FET conduction. The device also includes power-off pulldown (≤10 Ω at 0 V) and 0.68-V input hysteresis for noise immunity in noisy power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 4 V to 12.6 V - supports wide-input DC-DC controllers and enables operation across varied bus voltages without external regulation. |
| Peak Sink Current | 7.6 A - sufficient to rapidly discharge gate capacitance of parallel MOSFETs or GaN FETs in high-frequency (>500 kHz) topologies. |
| Peak Source Current | 1.3 A - provides controlled turn-on for GaN FETs with low VGS(th), minimizing Miller-induced oscillations. |
| N_OUT RON | 0.23 Ω (typ, 10 V) - ensures strong low-side pull-down for fast, robust gate discharge and shoot-through prevention. |
| P_OUT RON | 2.0 Ω (typ, 10 V) - balances turn-on speed and EMI control; higher resistance than N_OUT enables asymmetric switching tuning. |
| Propagation Delay | 12 ns (typ) - enables precise timing alignment in >1-MHz switching applications with minimal dead-time uncertainty. |
| Input Hysteresis | 0.68 V - rejects noise on IN/INB lines in high-dV/dt environments such as boost switch-node routing. |
Pinout & Package
LM5114AMF/NOPB is housed in a 6-pin SOT-23 package (2.90 mm × 1.60 mm) with exposed pad for thermal enhancement. Pin 1 is VDD, Pin 2 is P_OUT, Pin 3 is N_OUT, Pin 4 is VSS, Pin 5 is INB, and Pin 6 is IN. The exposed pad must be soldered to PCB ground plane per TI layout guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN | Noninverting logic input | Drives P_OUT high and N_OUT low when asserted; connect to VDD if unused to disable output. |
| INB | Inverting logic input | Drives P_OUT low and N_OUT high when asserted; connect to VSS if unused to disable output. |
| P_OUT | Open-drain source output | Provides 1.3-A peak current to charge gate; requires external pull-up or direct connection to FET gate with series resistor. |
| N_OUT | Open-drain sink output | Provides 7.6-A peak current to discharge gate; connects directly to FET gate with low-inductance path for fast turnoff. |
| VDD | Gate drive supply | Power input for internal logic and output stages; must be decoupled locally with ≤100-nF ceramic capacitor. |
| VSS | Ground reference | Common return for all signals; must be low-impedance and tied to exposed pad for thermal and noise performance. |
Key Features
| Feature | Design Value |
|---|---|
| Split-source/sink outputs | Enables independent gate resistor placement on P_OUT and N_OUT to tune rise/fall asymmetry for EMI-efficiency trade-offs. |
| UVLO with active clamp | Holds N_OUT ≤ 0.85 V during undervoltage conditions, preventing partial FET enhancement and ensuring safe power-down behavior. |
| TTL/CMOS-compatible inputs | Accepts 0–14 V logic regardless of VDD, allowing direct interface with industry-standard PWM controllers without level shifters. |
| Low input capacitance | 2.5 pF typical - minimizes loading on upstream controller outputs and preserves signal integrity in high-speed timing paths. |
| Power-off pulldown | ≤10 Ω resistance at VDD = 0 V - guarantees gate remains discharged during cold start or brownout, avoiding latch-up risk. |
Applications
| Boost Converters | Flyback & Forward Converters |
|---|---|
|
Use Scenario: 24–66 V input to 75 V output boost converter using EPC2001 GaN FET at 500 kHz. IC Role / Device Role / Timing Role: Low-side gate driver providing 7.6-A sink/1.3-A source to control GaN FET gate with <12-ns propagation delay and independent turn-on/turnoff tuning. Use Value: Enables 97% measured efficiency by minimizing switching losses through fast, controlled gate transitions and reduced Miller oscillation. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom flyback with tight regulation requirements. IC Role / Device Role / Timing Role: Low-side driver for N-channel MOSFET replacing Schottky diode, synchronized to primary-side controller via isolated feedback. Use Value: Reduces conduction loss by >40% versus diode rectification while maintaining zero-voltage switching compatibility via precise timing control. |
| Isolated Topology Synchronous Rectifiers | Motor Control Half-Bridge Drivers |
|
Use Scenario: Forward converter with dual secondary windings driving two parallel synchronous rectifiers for high-current 12 V output. IC Role / Device Role / Timing Role: Dual-channel-equivalent use of single LM5114AMF/NOPB per FET, leveraging IN/INB for complementary drive in transformer-isolated gate drive circuits. Use Value: Eliminates need for isolated gate drivers or optocouplers by supporting direct logic-level interface with transformer-coupled control signals. |
Use Scenario: High-side referenced half-bridge in 24 V BLDC motor gate driver, where LM5114AMF/NOPB drives low-side leg with fast commutation. IC Role / Device Role / Timing Role: Low-side gate driver delivering 7.6-A sink current to rapidly discharge gate during PWM dead-time intervals. Use Value: Prevents shoot-through by ensuring sub-15 ns turnoff delay and robust UVLO clamping during bus transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX5048ASA+ | Pin-to-pin compatible; identical 7.6-A sink / 1.3-A source rating, but lacks UVLO clamp and has higher 2.5-Ω P_OUT RON. | No active N_OUT clamp during UVLO - requires external pulldown for safe power-down in GaN applications. | Select MAX5048ASA+ only when UVLO clamping is not required and board space allows for external safety components. |
| LM5114MFX/NOPB | Same silicon die and electrical specs; differs only in WSON-6 packaging (3.0 mm × 3.0 mm) with enhanced thermal performance (RθJA = 51.0°C/W vs 108.1°C/W). | Better thermal dissipation enables sustained 7.6-A peak current at higher ambient temperatures (>85°C) without derating. | Choose LM5114MFX/NOPB for thermally constrained layouts or continuous high-current operation; LM5114AMF/NOPB preferred for space-constrained SOT-23 footprints. |
Compared with MAX5048ASA+, LM5114AMF/NOPB adds critical UVLO clamping for GaN reliability; compared with LM5114MFX/NOPB, it trades thermal margin for smaller PCB area - making LM5114AMF/NOPB optimal for cost-sensitive, space-limited boost and flyback designs where ambient temperature stays below 85°C.
Availability
LM5114AMF/NOPB is available at Aetrix Electronics and suitable for boost converters, flyback/forward power supplies, and isolated synchronous rectifier designs requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for LM5114AMF/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 50 years of leadership in high-reliability power conversion solutions.
The LM5114AMF/NOPB belongs to TI's high-speed gate driver product line, engineered specifically for demanding high-frequency, high-efficiency DC-DC conversion in telecom, industrial, and GaN-based power systems.
FAQ
What is the function of the INB pin on the LM5114AMF/NOPB?
The INB pin on the LM5114AMF/NOPB is the inverting logic input. When driven high, it forces P_OUT low and N_OUT high - producing an inverted gate drive signal relative to the IN pin. This enables direct implementation of inverting gate drive topologies without external logic, and must be tied to VSS when unused to prevent floating input conditions that could cause erratic output behavior in the LM5114AMF/NOPB.
Does the LM5114AMF/NOPB support GaN FETs, and what design features enable this?
Yes, the LM5114AMF/NOPB explicitly supports enhancement-mode GaN FETs. Key enablers include its 7.6-A peak sink current for rapid gate discharge, 1.3-A source current for controlled turn-on, 0.68-V input hysteresis to reject noise near fast-switching nodes, and split P_OUT/N_OUT outputs allowing independent gate resistor tuning - all documented in TI's LM5114AMF/NOPB datasheet Section 9.2.1.1 for EPC2001 GaN FET drive.
What is the purpose of the UVLO clamp feature in the LM5114AMF/NOPB?
The UVLO clamp in the LM5114AMF/NOPB activates when VDD drops below 3.25 V, turning on an internal PNP transistor to hold N_OUT ≤ 0.85 V. This ensures the driven FET remains fully off during brownout or startup, preventing partial enhancement and potential shoot-through or thermal runaway - a critical safety feature confirmed in LM5114AMF/NOPB datasheet Section 8.3 and Figure 1 truth table under UVLO condition.
Can the LM5114AMF/NOPB drive multiple parallel MOSFETs, and what limits this capability?
Yes, the LM5114AMF/NOPB can drive multiple parallel MOSFETs due to its 7.6-A peak sink current and low 0.23-Ω N_OUT RON. The practical limit is determined by total gate charge (QG) of the parallel stack, PCB layout inductance, and thermal dissipation - TI confirms this capability in LM5114AMF/NOPB datasheet Section 1, noting "strong sink current capability… to drive multiple FETs in parallel" without requiring external buffers.
How does the LM5114AMF/NOPB differ from the LM5114MFX/NOPB?
The LM5114AMF/NOPB and LM5114MFX/NOPB share identical electrical specifications and silicon die, differing only in package: LM5114AMF/NOPB uses SOT-23-6 (2.90 mm × 1.60 mm), while LM5114MFX/NOPB uses WSON-6 (3.00 mm × 3.00 mm) with exposed thermal pad. The WSON version offers lower RθJA (51.0°C/W vs 108.1°C/W), enabling higher sustained current in thermally constrained designs - both are valid options depending on layout and thermal requirements for the LM5114AMF/NOPB application.
LM5114AMF/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4V ~ 12.6V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.3A, 7.6A
- Input Type:
- Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 82ns, 12.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-6
LM5114AMF/NOPB FAQ
1.How can I place an order for LM5114AMF/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5114AMF/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5114AMF/NOPB reliable?
The price and inventory of LM5114AMF/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5114AMF/NOPB is usually 5 days.
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Once your LM5114AMF/NOPB order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for LM5114AMF/NOPB?
For technical support, including LM5114AMF/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5114AMF/NOPB requirements.
6.How does Aetrix verify that LM5114AMF/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5114AMF/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5114AMF/NOPB meets industry standards.
7.What is the process for return or replacement of LM5114AMF/NOPB?
All LM5114AMF/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5114AMF/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5114AMF/NOPB part is unused and in its original packaging.
Return procedure for LM5114AMF/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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