Texas Instruments LM5114AMF/S7003109

Overview

LM5114AMF/S7003109 from Texas Instruments is a single-channel, low-side gate driver IC designed for high-frequency switching of enhancement-mode GaN FETs and low-side MOSFETs in boost, flyback, and isolated synchronous rectifier topologies. It delivers 7.6-A peak sink and 1.3-A peak source drive current, features split P_OUT/N_OUT outputs for independent turn-on/turn-off control, and operates from a 4-V to 12.6-V supply with TTL/CMOS-compatible inputs.

For engineers reviewing the LM5114AMF/S7003109 datasheet, LM5114AMF/S7003109 pinout, LM5114AMF/S7003109 application, or LM5114AMF/S7003109 equivalent, this page provides verified functional context, thermal and switching specifications, SOT-23-6 package mapping, real-world GaN/MOSFET drive use cases, and two validated alternative parts with documented technical and application differences.

Technical Context

The LM5114AMF/S7003109 implements dual-output, noninverting/inverting logic inputs (IN/INB) with 0.68-V hysteresis and 2.5-pF input capacitance, enabling direct interface with PWM controllers. Its UVLO circuit activates at 3.25 V (rising) with 0.4-V hysteresis and clamps N_OUT below 1.0 V during undervoltage conditions using an internal PNP transistor.

Split gate outputs provide independent control paths: P_OUT (source) has 2.0–4.7 Ω typical on-resistance depending on VDD and temperature; N_OUT (sink) offers 0.23–0.55 Ω typical on-resistance and includes power-off pulldown (3.3–10 Ω) with clamp functionality. Propagation delay is 12 ns typical (VDD = 10 V, CL = 1000 pF), with matching delay between IN and INB paths.

Key Specifications

Pinout & Package

LM5114AMF/S7003109 is packaged in a 6-pin SOT-23 (DBV) with 2.90 mm × 1.60 mm body size and exposed pad for thermal enhancement. Pin 1 is VDD; Pin 2 is P_OUT; Pin 3 is N_OUT; Pin 4 is VSS; Pin 5 is INB; Pin 6 is IN. The exposed pad must be soldered to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with LM5114AMF/S7003109, the LM5114MFX/S7003110 offers superior thermal management in compact designs, while MAX5048BAUT+T delivers higher peak current for demanding Si MOSFET loads but lacks the integrated UVLO-driven N_OUT clamp critical for GaN reliability during brownout.

Availability

LM5114AMF/S7003109 is available at Aetrix Electronics and suitable for boost converters, flyback synchronous rectification, and GaN-based resonant power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for LM5114AMF/S7003109 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management ICs for industrial, automotive, and communications markets.

LM5114AMF/S7003109 belongs to TI's high-speed gate driver product line, engineered specifically for efficient, reliable switching of low-side GaN FETs and MOSFETs in high-frequency, high-efficiency power conversion systems.

FAQ

What is the recommended gate resistor configuration for LM5114AMF/S7003109 when driving a GaN FET?

For optimal EMI/efficiency balance with enhancement-mode GaN FETs like EPC2001, use a 1.5-Ω resistor in series with P_OUT (turn-on path) and a 2.7-Ω resistor in series with N_OUT (turn-off path). This asymmetry leverages the LM5114AMF/S7003109's split outputs to slow turn-on slightly-reducing dI/dt-induced ringing-while maintaining aggressive 7.6-A sink capability for fast, clean turnoff critical to GaN operation.

Does LM5114AMF/S7003109 support TTL and CMOS logic levels simultaneously?

Yes - the LM5114AMF/S7003109 inputs are TTL/CMOS compatible and withstand up to 14 V regardless of VDD. Its VIH threshold is 0.67×VDD (LM5114A variant) or 2.4 V (LM5114B), and VIL is 0.33×VDD or 0.8 V. The LM5114AMF/S7003109 is the LM5114A version, so logic thresholds scale with VDD, enabling robust interfacing with both 3.3-V and 5-V controllers without external level shifters.

How does the UVLO circuit in LM5114AMF/S7003109 protect the driven FET during startup?

When VDD falls below 3.25 V (rising threshold), the LM5114AMF/S7003109 disables its internal NMOS pull-down and activates an internal PNP transistor that clamps N_OUT to ≤1.0 V. This ensures the driven FET remains firmly off even before VDD reaches full operating voltage - preventing partial enhancement, shoot-through, or uncontrolled conduction during brownout or soft-start conditions.

Can LM5114AMF/S7003109 drive multiple parallel MOSFETs?

Yes - the LM5114AMF/S7003109's 7.6-A peak sink and 1.3-A peak source currents are designed to drive multiple low-side MOSFETs in parallel. Its low 0.23-Ω N_OUT R_ON ensures minimal voltage drop during high-current discharge, and the split outputs allow individual gate resistors per FET to balance dynamic sharing. Layout must minimize common-source inductance to avoid current imbalance.

What is the thermal performance difference between LM5114AMF/S7003109 and the WSON-packaged LM5114MFX/S7003110?

The LM5114AMF/S7003109 in SOT-23-6 has R_θJA = 108.1°C/W, while the LM5114MFX/S7003110 in WSON-6 achieves R_θJA = 51.0°C/W due to its larger exposed thermal pad and improved thermal path to the PCB. At 1.0 W dissipation, junction temperature rise above ambient is ~108°C for LM5114AMF/S7003109 versus ~51°C for LM5114MFX/S7003110 - making the WSON version preferable for thermally constrained designs.