Texas Instruments LM5114BMF/S7003094

Overview

LM5114BMF/S7003094 from Texas Instruments is a single-channel, low-side gate driver IC designed to drive enhancement-mode GaN FETs and low-side MOSFETs in high-frequency DC-DC converters. It delivers 7.6-A peak sink and 1.3-A peak source current, operates from 4-V to 12.6-V VDD, features independent P_OUT/N_OUT outputs for controllable rise/fall times, and includes UVLO with 3.25-V turn-on threshold - enabling reliable gate control in boost, flyback, and isolated synchronous rectifier applications.

For engineers reviewing the LM5114BMF/S7003094 datasheet, LM5114BMF/S7003094 pinout, LM5114BMF/S7003094 application, or LM5114BMF/S7003094 equivalent, this page provides verified functional specifications, SOT-23-6 package mapping, TTL-compatible logic inputs (IN/INB), split-output timing behavior, thermal resistance data (RθJA = 108.1°C/W), and validated alternatives for GaN and Si MOSFET gate drive systems.

Technical Context

The LM5114BMF/S7003094 implements a dual-output, noninverting/inverting low-side driver architecture with separate open-drain P_OUT (source) and N_OUT (sink) terminals. Its TTL logic inputs tolerate up to 14 V regardless of VDD, and its internal UVLO circuit clamps N_OUT below 1 V during undervoltage conditions using an integrated PNP transistor.

It supports fast switching via 12-ns typical propagation delay, 8–12.5-ns fall time (CL = 10,000 pF), and break-before-make timing (2.5 ns), while its 0.23-Ω typical sink R_ON and 2-Ω typical source R_ON enable efficient gate charging/discharging for GaN FETs with low Q_G and sub-6-V V_GS thresholds.

Key Specifications

Pinout & Package

LM5114BMF/S7003094 is packaged in a 6-pin SOT-23 (DBV) with 2.90 mm × 1.60 mm body size and exposed pad for thermal enhancement. The exposed pad must be soldered to PCB ground plane per TI layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with MAX5048BAUT+T, LM5114BMF/S7003094 adds critical UVLO clamping for GaN safety; compared with LM5114AMF/NOPB, its TTL inputs simplify integration with standard PWM ICs while maintaining identical drive strength and thermal performance in SOT-23.

Availability

LM5114BMF/S7003094 is available at Aetrix Electronics and suitable for boost converters, isolated synchronous rectifiers, and motor control gate drive applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for LM5114BMF/S7003094 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management ICs for industrial, automotive, and communications markets.

LM5114BMF/S7003094 belongs to TI's high-speed gate driver product line, engineered specifically for driving low-side enhancement-mode GaN FETs and Si MOSFETs in high-efficiency, high-frequency power conversion systems.

FAQ

What is the UVLO threshold and hysteresis of LM5114BMF/S7003094?

The LM5114BMF/S7003094 has a UVLO turn-on threshold of 3.25 V (typical) with 0.4-V hysteresis, ensuring reliable disablement below 2.85 V. During UVLO, the internal PNP transistor actively clamps N_OUT below 1 V - a key safety feature for GaN FETs that lack intrinsic body diodes and require guaranteed gate-off during brownout conditions. This behavior is confirmed in Section 8.3 of the SNVS790F datasheet.

Does LM5114BMF/S7003094 support both inverting and noninverting gate drive configurations?

Yes, LM5114BMF/S7003094 provides dedicated IN (noninverting) and INB (inverting) inputs, enabling either configuration without external logic. When IN is high and INB low, P_OUT goes high and N_OUT goes low; when IN is low and INB high, P_OUT goes low and N_OUT goes high. This dual-input structure is explicitly defined in the truth table (Section 8.4) and supports flexible integration with various PWM controller architectures.

What is the maximum capacitive load LM5114BMF/S7003094 can drive at 500 kHz?

LM5114BMF/S7003094 is characterized up to 10,000 pF load capacitance, with 82-ns rise time and 12.5-ns fall time at VDD = 10 V. At 500 kHz switching frequency, gate charge losses scale linearly with load capacitance and frequency - for a typical 8-nC GaN FET gate charge (e.g., EPC2001), the LM5114BMF/S7003094 delivers full 7.6-A sink current within the required 3.75-ns dV_DS/dt window, as validated in Section 9.2.2 of the datasheet.

How does the exposed pad on LM5114BMF/S7003094 affect thermal performance?

The exposed pad on LM5114BMF/S7003094 must be soldered to a PCB ground plane to achieve the specified R_θJA of 108.1°C/W (SOT-23). Without thermal pad connection, junction temperature rise increases significantly - potentially exceeding 150°C under 1.2-W dissipation. TI's layout guidelines (Section 11.1) mandate minimum 4×4 mm² copper area with ≥4 thermal vias to maintain safe operation at full 125°C ambient.

Is LM5114BMF/S7003094 pin-compatible with other members of the LM5114 family?

Yes, LM5114BMF/S7003094 shares identical 6-pin SOT-23 (DBV) pinout and electrical characteristics with LM5114AMF/NOPB and LM5114MFX/NOPB, differing only in input logic type (TTL vs. CMOS) and packaging. All variants use the same IN/INB/P_OUT/N_OUT/VDD/VSS terminal mapping and support interchangeable PCB layouts - confirmed in the Device Information table (page 2) and Pin Configuration section (page 3) of SNVS790F.