Texas Instruments LM5114BMF/S7003110

Overview

LM5114BMF/S7003110 from Texas Instruments is a single-channel, low-side gate driver IC designed to drive enhancement-mode GaN FETs and low-side MOSFETs in high-frequency DC-DC converters. It delivers 7.6-A peak sink and 1.3-A peak source current, operates from 4-V to 12.6-V VDD, features independent P_OUT/N_OUT outputs for controllable rise/fall times, and supports TTL/CMOS logic inputs up to 14 V - enabling direct interface with PWM controllers in boost, flyback, and isolated synchronous rectifier applications.

For engineers reviewing the LM5114BMF/S7003110 datasheet, LM5114BMF/S7003110 pinout, LM5114BMF/S7003110 application, or LM5114BMF/S7003110 equivalent, key selection considerations include its split-output architecture for independent turn-on/turn-off control, UVLO with active clamp (≤1 V under undervoltage), 12-ns typical propagation delay, and SOT-23-6 package with exposed thermal pad for high-power-density designs.

Technical Context

The LM5114BMF/S7003110 implements dual-output, noninverting/inverting logic inputs with 0.68-V hysteresis (LM5114B variant), enabling flexible gate-drive polarity selection in a single device. Its internal UVLO circuit disables outputs and activates an N_OUT clamp via integrated PNP when VDD falls below 3.25 V (rising threshold), ensuring safe low-side FET gate voltage retention during power-up/down.

It uses open-drain N_OUT (0.23-Ω typical R_ON at 25°C, VDD = 10 V) and open-source P_OUT (2.0-Ω typical R_ON) to independently control gate charging/discharging paths - allowing external gate resistors to tune dV/dt without compromising peak current capability. The 2.5-pF input capacitance and TTL-compatible inputs simplify integration with standard controller ICs.

Key Specifications

Pinout & Package

LM5114BMF/S7003110 is housed in a 6-pin SOT-23 package (2.90 mm × 1.60 mm) with exposed thermal pad (EP) soldered to PCB ground for enhanced thermal dissipation - critical for sustained 7.6-A peak sink operation in compact power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with LM5114MFX/S7003111, the LM5114BMF/S7003110 trades thermal margin for smaller footprint; versus MAX5048BAUT+T, it adds critical UVLO clamp protection for GaN reliability - making it the preferred choice for high-efficiency, safety-critical power stages.

Availability

LM5114BMF/S7003110 is available at Aetrix Electronics and suitable for boost converters, isolated synchronous rectifiers, and motor control half-bridge drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for LM5114BMF/S7003110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power conversion solutions.

The LM5114 product line delivers high-current, low-latency gate drivers optimized for GaN FETs and high-frequency synchronous rectification - targeting efficiency-critical applications in telecom, industrial power supplies, and EV auxiliary systems.

FAQ

What is the recommended gate resistor configuration for LM5114BMF/S7003110 when driving a GaN FET?

For EPC2001 GaN FETs, TI recommends 1.5 Ω in the P_OUT path and 2.7 Ω in the N_OUT path to balance turn-on speed and oscillation damping. These values leverage the LM5114BMF/S7003110's split outputs to achieve ~20 V/ns dV_DS/dt while suppressing gate ringing caused by PCB parasitics - verified in the LM5114BMF/S7003110 evaluation board design.

Does LM5114BMF/S7003110 support both inverting and noninverting gate drive configurations?

Yes, LM5114BMF/S7003110 supports both modes via dedicated IN (noninverting) and INB (inverting) inputs. When IN is driven high and INB low, P_OUT goes high and N_OUT goes low - enabling standard noninverting drive. Driving IN low and INB high produces inverted output behavior - eliminating need for external inverters in complex control schemes.

How does the UVLO clamp function protect the power stage during startup with LM5114BMF/S7003110?

When VDD drops below 2.85 V (UVLO falling threshold), LM5114BMF/S7003110 disables its internal NMOS sink and activates an integrated PNP transistor that clamps N_OUT to ≤1 V. This ensures the driven GaN or MOSFET remains fully off - preventing partial enhancement, shoot-through, or uncontrolled conduction during brownout or soft-start conditions.

Can LM5114BMF/S7003110 drive multiple parallel MOSFETs simultaneously?

Yes, LM5114BMF/S7003110's 7.6-A peak sink current and low 0.23-Ω N_OUT R_ON allow it to drive two or more parallel low-side MOSFETs without external buffers. Its fast 12-ns propagation delay ensures matched timing across paralleled devices - critical for current sharing and thermal balancing in high-current boost or LLC resonant converters.

What is the maximum capacitive load CL that LM5114BMF/S7003110 can drive while maintaining specified switching characteristics?

LM5114BMF/S7003110 is characterized up to CL = 10,000 pF, with typical rise time of 82 ns and fall time of 12.5 ns at VDD = 10 V. Beyond this, propagation delay and slew rate degrade predictably - TI confirms stable operation at CL ≤ 15,000 pF with minor timing increase, provided layout minimizes trace inductance and VDD decoupling is optimized per Section 10 of the LM5114BMF/S7003110 datasheet.