Texas Instruments LM5114BMFX/S7003094

Overview

LM5114BMFX/S7003094 from Texas Instruments is a single-channel, low-side gate driver IC designed for driving enhancement-mode GaN FETs and low-side MOSFETs in high-frequency DC-DC converters. It delivers 7.6-A peak sink and 1.3-A peak source drive current, operates from 4-V to 12.6-V VDD, features independent P_OUT/N_OUT outputs with 0.23-Ω pulldown and 2-Ω pullup resistances, and supports TTL/CMOS logic inputs up to 14 V regardless of supply voltage - enabling direct interface with PWM controllers in boost, flyback, and isolated synchronous rectifier applications.

For engineers reviewing the LM5114BMFX/S7003094 datasheet, LM5114BMFX/S7003094 pinout, LM5114BMFX/S7003094 application, or LM5114BMFX/S7003094 equivalent, this page provides verified technical context, package-specific pin functions, real-world switching performance data (12-ns typical propagation delay, 8–82-ns rise/fall times), thermal metrics for SOT-23-6, and validated alternatives for GaN and Si MOSFET gate drive designs requiring robust UVLO, split-output control, and power-off pulldown/clamp functionality.

Technical Context

The LM5114BMFX/S7003094 implements a dual-output, noninverting/inverting logic-compatible gate driver architecture with separate open-drain P_OUT (source) and N_OUT (sink) terminals. Its internal UVLO circuit (3.25–4.00-V threshold with 0.4-V hysteresis) disables outputs and activates an internal PNP clamp to hold N_OUT below 1 V when VDD is insufficient - ensuring safe FET gate state during brownout. The device uses CMOS input stages with 2.5-pF typical input capacitance and 0.68-V hysteresis (LM5114B variant), enabling noise-immune operation in noisy power-converter environments.

It supports high-speed switching via low R_ON outputs: 0.23-Ω typical N_OUT pulldown resistance at 10 V/−100 mA (SOT-23), and 2.0-Ω typical P_OUT pullup resistance at 10 V/50 mA. Break-before-make timing (2.5 ns typical) prevents shoot-through during output transitions, while independent gate resistor placement on P_OUT and N_OUT paths allows precise tuning of turn-on and turn-off slew rates - critical for EMI/efficiency trade-offs in >500-kHz GaN-based converters.

Key Specifications

Pinout & Package

LM5114BMFX/S7003094 is packaged in a 6-pin SOT-23 (DBV) with 2.90 mm × 1.60 mm body size and exposed pad for thermal enhancement. Pin assignments are validated per TI SNVS790F Rev F datasheet (Section 6).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with LM5114MFX, LM5114BMFX/S7003094 offers superior noise immunity in industrial environments due to fixed TTL thresholds, while versus MAX5048BAUT+T it delivers higher sink current and lower pulldown resistance - directly enabling faster GaN FET turnoff and improved efficiency in >300-kHz converters.

Availability

LM5114BMFX/S7003094 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, GaN-based power supplies, and isolated synchronous rectifier designs requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for LM5114BMFX/S7003094 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 50 years of power conversion innovation.

The LM5114BMFX/S7003094 belongs to TI's high-speed gate driver product line, engineered specifically for driving low-side enhancement-mode GaN FETs and Si MOSFETs in high-efficiency, high-frequency isolated and non-isolated DC-DC topologies.

FAQ

What is the logic input type supported by LM5114BMFX/S7003094?

The LM5114BMFX/S7003094 is the LM5114B variant, featuring TTL-compatible logic inputs with guaranteed 0.8-V maximum V_IL and 2.4-V minimum V_IH thresholds across –40°C to 125°C. This allows direct interface with standard PWM controllers like UC3845 or UCC28070 without level-shifting circuitry, and the inputs tolerate up to 14 V regardless of VDD - a key advantage confirmed in Section 7.5 of the SNVS790F datasheet.

Does LM5114BMFX/S7003094 support GaN FETs?

Yes, LM5114BMFX/S7003094 is explicitly qualified for driving enhancement-mode GaN FETs such as the EPC2001, as documented in Sections 1, 8.3, and 9.1–9.2.1.1 of the TI datasheet. Its 7.6-A peak sink current, 0.23-Ω N_OUT R_ON, and fast 12-ns propagation delay meet the stringent Q_GD delivery and dV_DS/dt requirements of GaN devices, and TI provides validated layout guidelines (Figure 32) and application curves (Figures 23–26) confirming reliable operation at 500 kHz.

What is the purpose of the exposed pad on LM5114BMFX/S7003094?

The exposed pad on the LM5114BMFX/S7003094 SOT-23-6 package (pin EP) must be soldered to the PCB ground plane to achieve specified thermal performance. Per Section 7.4, this reduces junction-to-board thermal resistance (R_θJB) to 24.9°C/W and lowers R_θJA from >150°C/W (no pad) to 108.1°C/W - critical for sustaining 7.6-A peak sink current without exceeding 125°C junction temperature in continuous operation.

How does the UVLO function behave in LM5114BMFX/S7003094?

In LM5114BMFX/S7003094, the UVLO circuit activates when VDD falls below 3.25–4.00 V (typical 3.65 V), disabling both P_OUT and N_OUT outputs. Crucially, an internal PNP transistor then clamps N_OUT to <1 V - ensuring the driven FET remains safely OFF even when VDD is too low to activate the NMOS pulldown. This behavior is confirmed in Section 8.3 and Figure 1 truth table, and the 0.4-V hysteresis prevents chattering during slow VDD ramp-up.

Can LM5114BMFX/S7003094 drive multiple MOSFETs in parallel?

Yes, LM5114BMFX/S7003094 is designed to drive multiple parallel MOSFETs, as stated in the first sentence of the datasheet Description section. Its 7.6-A peak sink current and low 0.23-Ω N_OUT R_ON provide sufficient drive strength to simultaneously discharge the combined gate charge of two or more Si MOSFETs (e.g., CSD18532KCS) without excessive voltage droop - a capability validated in TI reference designs and explicitly cited in Section 1 Features.