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Texas Instruments LMG1025QDEETQ1
- Part No.:
- LMG1025QDEETQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
LMG1025QDEETQ1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 6WSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,045
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Product details
Overview
LMG1025QDEETQ1 from Texas Instruments is an AEC-Q100 Grade 1 qualified single-channel low-side GaN and logic-level MOSFET driver optimized for automotive high-frequency switching applications. It delivers 7 A pull-up / 5 A pull-down peak drive current, 2.6 ns rising / 2.9 ns falling propagation delay, and 1.25 ns minimum input pulse width - enabling precise nanosecond laser pulsing in LiDAR and time-of-flight systems.
For engineers reviewing the LMG1025QDEETQ1 datasheet, LMG1025QDEETQ1 pinout, LMG1025QDEETQ1 application, or LMG1025QDEETQ1 equivalent, key selection criteria include propagation delay matching, split-output gate timing control, UVLO/OTP protection integrity, and 2 mm × 2 mm WSON-6 package compatibility with high-speed layout constraints.
Technical Context
The LMG1025QDEETQ1 implements a dual-input Schmitt-trigger AND-gate architecture with independent IN+ (pull-down) and IN− (pull-up) inputs, enabling robust noise immunity and flexible pulse generation via delayed input pairing. Its asymmetrical 7 A source / 5 A sink output stage drives GaN FETs through split OUTH/OUTL terminals, allowing independent gate resistor tuning of turn-on slew rate and turn-off damping.
Internally, the device integrates undervoltage lockout (4.0–4.35 V threshold with 85 mV hysteresis) and overtemperature protection (170 °C trip, 20 °C hysteresis), both active during fault conditions to prevent unintended FET conduction. The 5 V nominal supply operates within 4.75–5.25 V recommended range, with absolute maximum VDD at 5.75 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Propagation delay (rising) | 2.6 ns typical - enables sub-5 ns control loop response in DC/DC converters and tight timing alignment in ToF systems. |
| Propagation delay (falling) | 2.9 ns typical - reduces dead-time uncertainty and improves power stage efficiency in high-frequency synchronous rectifiers. |
| Min. input pulse width | 1.25 ns typical - supports eye-safe, high-peak-power laser diode pulsing in automotive LIDAR with >150 m detection range. |
| Pulse distortion (Δtpd) | 300 ps typical - ensures <0.3 ns timing skew between rising/falling edges for accurate time-of-flight measurement. |
| Output drive strength | 7 A source / 5 A sink - provides sufficient dV/dt control for 3.2 nC GaN FETs while minimizing gate ringing without excessive external resistance. |
| Supply voltage range | 4.75–5.25 V - matches standard automotive 5 V rail with ±2.5% tolerance, eliminating need for dedicated LDO in compact modules. |
| Operating temperature | –40 °C to +125 °C - meets under-hood thermal requirements for driver monitoring and occupant sensing systems. |
Pinout & Package
LMG1025QDEETQ1 is housed in a 2 mm × 2 mm, 6-pin WSON (DEE) package with wettable flanks and an exposed thermal pad internally connected to GND. This leadless construction minimizes parasitic inductance for high-di/dt GaN switching and supports automated optical inspection (AOI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN+ | Input (Schmitt-triggered, pull-down) | Positive logic input; requires ≥1.7 V to assert high; used with IN− to generate gated output pulses via internal AND logic. |
| IN− | Input (Schmitt-triggered, pull-up) | Negative logic input; requires ≤1.1 V to assert low; enables nanosecond pulse creation when paired with delayed IN+ signal. |
| VDD | Power supply | 5 V nominal input; must be decoupled with low-ESL ceramic capacitor adjacent to pin to suppress ringing-induced overshoot. |
| GND | Ground return | Primary reference for all signals and power; must connect directly to FET source with minimal trace inductance to avoid ground bounce errors. |
| OUTH | Output (source) | Pull-up gate drive output; connects via external resistor to FET gate to control turn-on speed and EMI. |
| OUTL | Output (sink) | Pull-down gate drive output; connects via separate resistor to FET gate to independently tune turn-off damping and ringing suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Split-output architecture | Independent OUTH and OUTL terminals allow asymmetric gate resistor selection - critical for optimizing GaN FET switching loss vs. EMI trade-offs. |
| Nanosecond pulse generation | 1.25 ns minimum input pulse width + 300 ps pulse distortion enables direct generation of <2 ns laser pulses without external pulse-shaping circuitry. |
| AEC-Q100 Grade 1 qualification | Validated for –40 °C to +125 °C operation with full reliability testing - suitable for safety-critical automotive sensing in cabin and ADAS domains. |
| Integrated protection | UVLO (4.0–4.35 V) prevents partial FET turn-on; OTP (170 °C) disables outputs during thermal overload - eliminates need for external fault management logic. |
| Low-inductance WSON-6 package | 2 mm × 2 mm footprint with wettable flanks reduces gate loop inductance below 0.5 nH - essential for maintaining <1 ns rise/fall fidelity into 220 pF loads. |
Applications
| Automotive LIDAR | Driver Monitoring System |
|---|---|
Use Scenario: Pulsing 905 nm laser diodes at 1–10 MHz with 1–3 ns duration for high-resolution distance mapping. IC Role / Device Role / Timing Role: Low-side gate driver generating precise nanosecond gate pulses to control GaN laser driver FETs. Use Value: 1.25 ns minimum pulse width and 300 ps pulse distortion enable sub-centimeter ranging accuracy and extended detection range beyond 200 m. | Use Scenario: Driving VCSEL arrays in driver-facing time-of-flight sensors for real-time head/eye position tracking. IC Role / Device Role / Timing Role: High-speed buffer and gate driver converting controller PWM into fast-switching gate signals for low-RDS(on) Si MOSFETs. Use Value: 2.6 ns/2.9 ns propagation delays minimize timing jitter in multi-sensor synchronization, improving gaze estimation repeatability by >30%. |
| Vehicle Occupant Detection | High-Frequency DC/DC Converter |
Use Scenario: Powering millimeter-wave radar transceivers requiring ultra-low-noise, tightly regulated 3.3 V supplies. IC Role / Device Role / Timing Role: Low-side driver controlling GaN half-bridge switches in 2–5 MHz resonant LLC converters. Use Value: 7 A/5 A drive strength ensures full enhancement of 60 mΩ GaN FETs at 5 MHz, reducing conduction loss by 42% versus discrete MOSFET solutions. | Use Scenario: Gate driving in 1–3 MHz buck converters for ADAS domain controllers and infotainment SoCs. IC Role / Device Role / Timing Role: Single-channel low-side driver replacing legacy 100 ns+ drivers to support higher switching frequencies and smaller magnetics. Use Value: Sub-3 ns propagation delay improves voltage regulation loop bandwidth by 3×, enabling faster transient response to load steps up to 10 A/µs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-side GaN/MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1210RGETQ1 | Dual-channel, 10 A source / 8 A sink, 1.8 ns propagation delay, 3 mm × 3 mm VQFN-16 package | Supports dual-phase or complementary drive topologies; higher drive strength suits >10 A GaN half-bridges | Select when needing dual outputs or >7 A peak current; larger package increases layout area but improves thermal margin. |
| UCC27611DR | Single-channel, 10 A source/sink, 1.5 ns propagation delay, 2 mm × 2 mm WSON-6, non-automotive grade | Lacks AEC-Q100 qualification and OTP; rated only to 125 °C junction temperature | Acceptable for non-safety-critical industrial or test equipment where automotive qualification is not required. |
Compared with LMG1025QDEETQ1, LMG1210RGETQ1 adds channel count and drive strength at the cost of size and complexity, while UCC27611DR offers faster timing but omits automotive protections - making LMG1025QDEETQ1 the optimal balance of speed, safety, and compactness for certified automotive sensing and power systems.
Availability
LMG1025QDEETQ1 is available at Aetrix Electronics and suitable for automotive LIDAR, driver monitoring, and high-frequency DC/DC converter designs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for LMG1025QDEETQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and automotive ICs, with decades of experience in high-reliability power management and signal chain solutions.
The LMG1025QDEETQ1 belongs to TI's automotive-grade high-speed gate driver product line, engineered specifically for nanosecond-precision timing in LiDAR, ToF, and high-frequency power conversion systems.
FAQ
What is the minimum input pulse width supported by the LMG1025QDEETQ1?
The LMG1025QDEETQ1 supports a typical minimum input pulse width of 1.25 ns, verified under 220 pF load conditions. This capability enables direct nanosecond-scale laser diode pulsing in automotive LIDAR without external pulse-shaping circuits. The LMG1025QDEETQ1 achieves this via ultra-fast internal logic and low-propagation-delay output stages, ensuring reliable state transitions even at sub-2 ns durations.
Does the LMG1025QDEETQ1 support differential input signaling?
No, the LMG1025QDEETQ1 does not support true differential input operation. IN+ and IN− are single-ended Schmitt-trigger inputs with internal pull-down (IN+) and pull-up (IN−) resistors. They feed an AND gate to generate output pulses - not a differential comparator. The LMG1025QDEETQ1 relies on controlled delay between IN+ and IN− signals to create narrow output pulses, not differential voltage thresholds.
How does the split-output configuration (OUTH/OUTL) improve GaN FET performance in the LMG1025QDEETQ1?
The LMG1025QDEETQ1's split outputs allow independent gate resistors on OUTH (turn-on) and OUTL (turn-off), enabling precise control of dV/dt and ringing suppression. For GaN FETs, this prevents voltage overshoot and oscillation during fast switching - reducing stress on both the FET and LMG1025QDEETQ1. This design flexibility is integral to achieving stable 5+ MHz operation without compromising EMI or reliability.
Is the LMG1025QDEETQ1 compatible with logic-level MOSFETs in addition to GaN FETs?
Yes, the LMG1025QDEETQ1 is explicitly designed to drive both enhancement-mode GaN FETs and logic-level silicon MOSFETs. Its 5 V supply, 7 A/5 A drive strength, and 2.6 ns/2.9 ns propagation delays ensure full enhancement and fast switching of low-threshold MOSFETs such as those used in automotive cabin power distribution and sensor interface circuits. The LMG1025QDEETQ1 datasheet confirms compatibility across both device families under identical operating conditions.
What protection features are integrated into the LMG1025QDEETQ1?
The LMG1025QDEETQ1 integrates undervoltage lockout (UVLO) with 4.0–4.35 V activation and 85 mV hysteresis, plus overtemperature protection (OTP) triggering at 170 °C with 20 °C hysteresis. During UVLO, OUTL is actively pulled low to prevent false turn-on; during OTP, both outputs disable. These protections are fully qualified per AEC-Q100 Grade 1 and require no external components - a core feature distinguishing the LMG1025QDEETQ1 from generic gate drivers.
LMG1025QDEETQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.75V ~ 5.25V
- Logic Voltage - VIL, VIH:
- 1.8V, 1.7V
- Current - Peak Output (Source, Sink):
- 7A, 5A
- Input Type:
- Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 650ps, 850ps
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 6-WSON (2x2)
LMG1025QDEETQ1 FAQ
1.How can I place an order for LMG1025QDEETQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for LMG1025QDEETQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LMG1025QDEETQ1 reliable?
The price and inventory of LMG1025QDEETQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG1025QDEETQ1 is usually 5 days.
3.What payment methods are accepted for LMG1025QDEETQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG1025QDEETQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LMG1025QDEETQ1?
LMG1025QDEETQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LMG1025QDEETQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LMG1025QDEETQ1?
For technical support, including LMG1025QDEETQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG1025QDEETQ1 requirements.
6.How does Aetrix verify that LMG1025QDEETQ1 is sourced from the original manufacturer or authorized distributors?
All LMG1025QDEETQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG1025QDEETQ1 meets industry standards.
7.What is the process for return or replacement of LMG1025QDEETQ1?
All LMG1025QDEETQ1 units undergo pre-shipment inspection (PSI). If there is an issue with LMG1025QDEETQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LMG1025QDEETQ1 part is unused and in its original packaging.
Return procedure for LMG1025QDEETQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LMG1025QDEETQ1 Tags
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