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Texas Instruments LMG1205YFXR
- Part No.:
- LMG1205YFXR
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 12-WFBGA, DSBGA
- Datasheet:
-
LMG1205YFXR.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 12DSBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LMG1205YFXR from Texas Instruments is a 100-V, half-bridge GaN gate driver IC with integrated bootstrap diode, delivering 1.2-A peak source and 5-A sink current per channel, 35-ns typical propagation delay, and split-gate outputs for independent turnon/turnoff control-designed for high-frequency synchronous buck, boost, and half-bridge converters using enhancement-mode GaN FETs.
For engineers reviewing the LMG1205YFXR datasheet, LMG1205YFXR pinout, LMG1205YFXR application, or LMG1205YFXR equivalent, this page delivers verified technical context, real-world timing behavior, package-inductance-aware layout guidance, and validated alternative options for GaN-based MHz-switching power stages.
Technical Context
The LMG1205YFXR implements independent TTL-compatible HI/LI inputs driving split-output high-side (HOH/HOL) and low-side (LOH/LOL) stages referenced to HS and VSS respectively, with internal level-shifting enabling precise 1.5-ns typical delay matching between LO and HO paths. Its bootstrap rail (HB) operates up to 100 VDC and is clamped at 5 V to protect GaN FET gate oxide.
Undervoltage lockout (UVLO) acts separately on VDD (3.8-V rising threshold) and HB–HS (3.2-V rising threshold), each with 200-mV hysteresis; strong 0.6-Ω pulldown ensures robust gate discharge during high dv/dt transients, while 2.1-Ω pullup mitigates switch-node ringing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHB–HS Max | 100 V - supports high-input-voltage half-bridge topologies without external level-shifters or isolated supplies. |
| IOUT Sink/Source | 5 A sink / 1.2 A source - enables fast GaN FET turnoff under high di/dt and controlled turnon to limit overshoot. |
| Propagation Delay | 35 ns typical - allows stable operation up to several MHz with tight dead-time control in synchronous converters. |
| Delay Matching | 1.5 ns typical - minimizes shoot-through risk in phase-aligned high-side/low-side switching sequences. |
| Bootstrap Clamp | 5 V ±0.25 V - prevents GaN gate-source overvoltage during negative HS transients or layout-induced overshoot. |
| Input Voltage Range | 0–14 V - accepts direct connection to 3.3-V, 5-V, or 12-V PWM controllers without level-shifting buffers. |
| Package Inductance | Minimized via 2.0 mm × 2.0 mm DSBGA - reduces parasitic ringing and improves EMI performance in high-dv/dt GaN designs. |
Pinout & Package
LMG1205YFXR uses a 12-pin DSBGA (YFX) package with 2.00 mm × 2.00 mm body size and ultra-low inductance interconnects optimized for GaN switching integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1: LOL | Low-side sink output | Directly drives GaN FET gate to VSS; 0.6-Ω pulldown ensures rapid, noise-immune turnoff. |
| A2: VSS | Ground reference | Common return for all signals; must be low-inductance connection to PCB ground plane. |
| A3/C4: VDD | 5-V gate drive supply | Powers low-side stage and logic; requires local 0.1-µF ceramic bypass placed adjacent to pins. |
| A4: LI | Low-side input | TTL-compatible control signal; unused pins must be tied to VSS-not left floating. |
| B1: LOH | Low-side source output | Provides turnon current path; gate resistor adjusts rise time independently of turnoff. |
| B4: HI | High-side input | TTL-compatible control signal referenced to VSS; withstands up to 14 V regardless of VDD. |
| C1/D4: HS | High-side source node | Connects to bootstrap capacitor negative terminal and GaN FET source; tolerates –5 V to +100 V. |
| D1: HOL | High-side sink output | Drives GaN FET gate to HS potential; critical for clean turnoff in floating high-side configuration. |
| D2: HOH | High-side source output | Delivers turnon current referenced to HS; split output enables independent gate resistor placement. |
| D3: HB | Bootstrap rail | Connects to bootstrap capacitor positive terminal; internally clamped at 5 V to protect GaN gate oxide. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated 100-V bootstrap diode | Eliminates external diode, reduces BOM count, and avoids reverse-recovery charge mismatch in GaN layouts. |
| Split-gate outputs (HOH/HOL, LOH/LOL) | Enables independent optimization of turnon/turnoff speed via discrete gate resistors-critical for EMI and efficiency tradeoffs. |
| Internal 5-V HB clamp | Prevents gate-source overvoltage during negative HS excursions caused by layout parasitics or GaN body diode conduction. |
| 1.5-ns LO/HO delay matching | Reduces minimum required dead time, increasing effective duty cycle range in high-frequency synchronous rectification. |
| Strong 5-A sink capability | Ensures reliable gate discharge under high dv/dt conditions, preventing unintended GaN turnon during switching transitions. |
Applications
| Current-Fed Push-Pull Converters | Half-Bridge DC-DC Converters |
|---|---|
|
Use Scenario: High-efficiency 48-V input telecom power supply delivering 12-V/8-A output with >97% efficiency at 1-MHz switching. IC Role / Device Role / Timing Role: LMG1205YFXR drives complementary GaN FETs in push-pull topology, providing matched 35-ns propagation and independent gate control to minimize cross-conduction losses. Use Value: Enables zero-voltage switching (ZVS) across full load range by precisely controlling dead time and minimizing gate drive loop inductance via DSBGA package. |
Use Scenario: Isolated 400-V bus-to-12-V intermediate bus converter in server PSUs using GaN half-bridge with active clamp. IC Role / Device Role / Timing Role: LMG1205YFXR serves as dual-channel gate driver with split outputs, managing high-side and low-side GaN FETs while maintaining <2-ns skew under thermal stress. Use Value: Achieves <10-ns minimum dead time without shoot-through, directly supporting MHz-class operation and reducing magnetics size by 40%. |
| Synchronous Buck Converters | Two-Switch Forward Converters |
|
Use Scenario: Point-of-load regulator for AI accelerators requiring 0.8-V/100-A output with <10-µs transient response. IC Role / Device Role / Timing Role: LMG1205YFXR controls high-side and low-side GaN switches with independent turnon/turnoff strength adjustment to balance efficiency and EMI. Use Value: Delivers 1.2-A source/5-A sink drive into 10-nC GaN gate, achieving <30-ns effective rise/fall times and <50-mV output voltage droop during 50-A/µs load steps. |
Use Scenario: Industrial 24-V input power module for motor drives, operating at 500-kHz with 24-V output and 15-A continuous current. IC Role / Device Role / Timing Role: LMG1205YFXR drives two primary-side GaN switches in two-switch forward topology, leveraging internal UVLO on both VDD and HB rails for fault-safe startup. Use Value: Prevents partial turnon during brownout by asserting UVLO on VDD <3.8 V and HB–HS <3.2 V-ensuring clean reset before first switching cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1210YQW | Higher 10-A sink current, 100-V HB rating, same DSBGA-12 package but with enhanced thermal resistance (RθJA = 65°C/W vs. 76.8°C/W). | Preferred for >10-A GaN FETs or higher ambient temperature environments (>105°C junction). | Select LMG1210YQW when driving larger GaN devices or when thermal margin is constrained; pinout and logic are identical. |
| UCC27611DR | 6-A sink / 3-A source, no integrated bootstrap diode, 8-V max HB–HS, SOIC-8 package with higher inductance. | Requires external bootstrap diode and careful layout to achieve <1-MHz operation; lacks internal clamp and delay matching. | Choose UCC27611DR only if cost sensitivity outweighs GaN-specific optimizations-requires additional components and layout effort. |
Compared with LMG1205YFXR, LMG1210YQW offers superior thermal performance and higher sink current for demanding GaN loads, while UCC27611DR trades integration and precision for lower cost and wider availability-but demands external circuitry and sacrifices MHz-ready timing fidelity.
Availability
LMG1205YFXR is available at Aetrix Electronics and suitable for high-frequency power conversion, GaN-based server PSUs, and industrial motor drive systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for LMG1205YFXR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management, signal chain, and high-reliability IC design.
The LMG1205YFXR belongs to TI's GaN gate driver product line, engineered specifically to address the timing precision, voltage robustness, and layout simplicity needs of MHz-class GaN power stages in datacenter, telecom, and industrial applications.
FAQ
What is the maximum operating frequency supported by the LMG1205YFXR?
The LMG1205YFXR is characterized for stable operation up to several MHz, with 35-ns typical propagation delay and 1.5-ns delay matching enabling reliable use at 1–2 MHz in well-designed GaN half-bridge circuits. Performance depends on gate load, PCB layout, and thermal management-TI's reference designs demonstrate stable 1-MHz operation with 10-nC GaN FETs.
Does the LMG1205YFXR require an external bootstrap diode?
No, the LMG1205YFXR integrates a 100-V bootstrap diode, eliminating the need for an external component. This reduces BOM count, layout area, and reverse-recovery mismatch risks. The internal diode has 0.45-V typical forward voltage at 100 µA and 0.9-V at 100 mA, with 40-ns reverse recovery time.
How does the internal 5-V bootstrap clamp protect GaN FETs in the LMG1205YFXR?
The LMG1205YFXR clamps the HB–HS voltage at 5 V ±0.25 V to prevent exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. This protection activates within ~270 ns of overvoltage detection and remains active until the clamp threshold falls below regulation-critical during negative HS transients induced by layout parasitics or GaN body diode conduction.
Can unused HI or LI inputs on the LMG1205YFXR be left floating?
No-unused HI or LI inputs on the LMG1205YFXR must be tied to VSS (ground) or VDD; they must never be left floating. Floating inputs may cause erratic switching, increased power consumption, or latch-up due to TTL-compatible input structure with internal pulldown (~200 kΩ). TI explicitly mandates termination in Section 5.1 of the datasheet.
What is the purpose of split outputs (HOH/HOL and LOH/LOL) in the LMG1205YFXR?
The split outputs in the LMG1205YFXR allow independent placement of gate resistors in the turnon (HOH/LOH) and turnoff (HOL/LOL) paths. This enables precise tuning of rise/fall times to balance switching loss, EMI, and shoot-through risk-especially valuable for GaN FETs where fast switching increases dv/dt sensitivity and layout-dependent ringing.
LMG1205YFXR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 12-WFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.2A, 5A
- Input Type:
- TTL
- High Side Voltage - Max (Bootstrap):
- 100 V
- Rise / Fall Time (Typ):
- 7ns, 3.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 12-DSBGA
LMG1205YFXR FAQ
1.How can I place an order for LMG1205YFXR through Aetrix?
Please submit a Request for Quotation (RFQ) for LMG1205YFXR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LMG1205YFXR reliable?
The price and inventory of LMG1205YFXR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG1205YFXR is usually 5 days.
3.What payment methods are accepted for LMG1205YFXR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG1205YFXR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LMG1205YFXR?
LMG1205YFXR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LMG1205YFXR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LMG1205YFXR?
For technical support, including LMG1205YFXR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG1205YFXR requirements.
6.How does Aetrix verify that LMG1205YFXR is sourced from the original manufacturer or authorized distributors?
All LMG1205YFXR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG1205YFXR meets industry standards.
7.What is the process for return or replacement of LMG1205YFXR?
All LMG1205YFXR units undergo pre-shipment inspection (PSI). If there is an issue with LMG1205YFXR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LMG1205YFXR part is unused and in its original packaging.
Return procedure for LMG1205YFXR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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