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Texas Instruments LMG1210RVRR
- Part No.:
- LMG1210RVRR
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 19-WFQFN Exposed Pad
- Datasheet:
-
LMG1210RVRR.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 19WQFN
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LMG1210RVRR from Texas Instruments is a 200-V, 1.5-A peak source / 3-A peak sink half-bridge gate driver IC optimized for GaN FETs and ultra-high-frequency switching up to 50 MHz. It features adjustable dead time (0.5–20 ns), 10-ns typical propagation delay, 3.4-ns high-side/low-side timing match, internal 5-V LDO (6–18 V input), and 300-V/ns CMTI - deployed in RF envelope tracking and high-speed DC-DC converters.
For engineers reviewing the LMG1210RVRR datasheet, LMG1210RVRR pinout, LMG1210RVRR application, or LMG1210RVRR equivalent, key selection criteria include bootstrap diode control logic, independent vs. PWM input mode configuration, dead-time resistor scaling (20–1800 kΩ), thermal shutdown thresholds (150°C low-side, 160°C high-side), and WQFN-19 package layout constraints for <1 pF HO–LO capacitance.
Technical Context
The LMG1210RVRR implements a proprietary high-voltage capacitor-based level shifter enabling stable 300-V/ns common-mode transient immunity without propagation delay variation. Its dual-mode operation-PWM mode with externally adjustable dead time per edge (via DHL/DLH resistors) and Independent Input Mode (IIM) with dedicated HI/LI controls-is determined at power-up and latched.
Internal architecture includes an active bootstrap switch that disables conduction during dead time to prevent overcharging and reduce reverse recovery losses, plus a 5-V LDO with 400–750 mV dropout and 100 mA output capability. All switching characteristics-including 0.5 ns unloaded rise/fall times and 4 ns minimum pulse width-are specified across –40°C to 125°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max operating frequency | 50 MHz - enables use in RF envelope tracking and Class-E wireless charging topologies. |
| Propagation delay (typ) | 10 ns - minimizes timing uncertainty in high-speed synchronous rectification and zero-voltage switching circuits. |
| HS/LS timing match (max) | 3.4 ns - reduces required dead time margin, improving efficiency in hard-switched GaN half-bridges. |
| Dead time adjust range | 0.5–20 ns per edge - set via external resistor (20–1800 kΩ) on DHL/DLH pins for precise shoot-through prevention. |
| LDO output | 5.00 V ±2.5% - regulates from 6–18 V VIN, supports gate drive stability across wide input rails without external regulator. |
| CMTI rating | 300 V/ns - ensures robust level-shifting under fast dV/dt transients in high-efficiency motor drives and DC-DC converters. |
| Package | WQFN-19 (3.0 mm × 4.0 mm) - low-inductance footprint with separate HS/VSS thermal pads for optimal EMI and thermal performance. |
Pinout & Package
LMG1210RVRR uses a 19-pin WQFN package (RVR suffix) with 3.0 mm × 4.0 mm body size, dual exposed thermal pads (HS and VSS), and optimized pin arrangement for minimal gate loop inductance. Pin 1 is BST; pin 19 is PWM/LI; pins 9/13/16 are internally connected HS nodes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| BST (17) | Bootstrap diode anode connection | Interface point for external bootstrap diode; internal switch disconnects it during dead time to suppress Qrr losses. |
| DHL (5) | Dead time control (high-to-low) | Resistor-to-VSS sets HO falling to LO rising dead time; floating/tied to VSS in IIM mode. |
| DLH (6) | Dead time control (low-to-high) | Resistor-to-VSS sets LO rising to HO falling dead time; tied to VDD to select IIM mode. |
| EN/HI (18) | Enable or high-side control input | In PWM mode: enable signal; in IIM mode: direct HI control - sampled at power-up to latch functional mode. |
| PWM/LI (19) | PWM or low-side control input | In PWM mode: single-input timing source; in IIM mode: dedicated LI control - determines output polarity and timing. |
| HO (10) | High-side gate driver output | Drives GaN FET gate with 1.5-A source / 3-A sink; referenced to HS node; isolated by <1 pF HO–LO capacitance. |
| LO (8) | Low-side gate driver output | Drives low-side FET gate with same current drive specs as HO; referenced to VSS; supports fast 0.5 ns unloaded transitions. |
| VDD (4) | LDO output and low-side supply | 5-V regulated rail powering low-side circuitry and gate drive; requires ≥0.3 µF ceramic capacitor with ESR <500 mΩ. |
| VIN (2) | LDO input | Accepts 6–18 V input for internal regulation; bypassed by connecting directly to VDD if 5-V supply is available. |
| VSS (3,7) | Low-side ground reference | Return path for all low-side signals including VDD, LO, and digital inputs; electrically isolated from HS domain. |
| HS (9,13,16) | High-side switch node and ground | Internally connected pins forming the high-side return; tied to thermal pad (HS) for enhanced thermal dissipation and noise immunity. |
| HB (12) | Bootstrap supply input | Connects to cathode of external bootstrap diode; supplies high-side driver; UVLO threshold 3.4–3.8 V (rising). |
Key Features
| Feature | Design Value |
|---|---|
| Adjustable per-edge dead time | Independent 0.5–20 ns tuning via DHL/DLH resistors eliminates fixed dead-time inefficiency in asymmetric switching waveforms. |
| Active bootstrap switch | Internal MOSFET disables bootstrap diode conduction during dead time, reducing reverse recovery charge and preventing overcharge. |
| 300-V/ns CMTI with stable delay | Proprietary capacitor-coupled level shifter maintains <1 ns delay variation across full 300-V/ns slew rate - critical for GaN reliability. |
| Two-latch functional modes | IIM and PWM modes are hardware-latched at power-up via DHL/DLH states - prevents runtime mode corruption in noisy environments. |
| Triple thermal protection | Separate 150°C (low-side switching), 160°C (high-side), and 160°C (LDO) shutdown thresholds enable granular fault response without full system halt. |
Applications
| RF Envelope Tracking | High-Speed DC-DC Converters |
|---|---|
|
Use Scenario: Dynamic supply modulation of RF power amplifiers in 5G base stations using GaN HEMTs switched at >20 MHz. IC Role / Device Role / Timing Role: Half-bridge driver delivering precisely timed, matched HO/LO edges to minimize spectral regrowth and switching loss. Use Value: 3.4-ns HS/LS match and 10-ns propagation delay enable sub-10 ns dead time, preserving amplifier linearity at multi-MHz modulation bandwidths. |
Use Scenario: 1–5 MHz resonant LLC and ZVS buck converters in server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: High-side/low-side gate driver with integrated LDO and bootstrap control for GaN FETs in compact, high-density layouts. Use Value: Internal 5-V LDO (6–18 V input) eliminates external bias rail; 300-V/ns CMTI ensures reliable operation despite fast transformer leakage spikes. |
| Class-D Audio Amplifiers | Class-E Wireless Charging |
|
Use Scenario: Multi-kW ultrasonic audio amplifiers requiring >1 MHz switching to eliminate audible switching noise. IC Role / Device Role / Timing Role: Low-jitter, high-current gate driver synchronizing complementary GaN FETs with minimal propagation skew. Use Value: 4 ns minimum pulse width and 0.5 ns unloaded rise/fall times support clean square-wave generation at >2 MHz carrier frequencies. |
Use Scenario: Resonant wireless power transfer systems operating at 6.78 MHz or 13.56 MHz with GaN half-bridge inverters. IC Role / Device Role / Timing Role: High-efficiency driver managing dead time to avoid shoot-through while sustaining high-frequency ZVS conditions. Use Value: Adjustable dead time (0.5–20 ns) allows fine-tuning for varying coil coupling and load conditions without PCB redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RVRR | Lower 100-V rating, no adjustable dead time (fixed ~10 ns), 1.2-A source / 2-A sink drive strength. | Suitable for lower-voltage GaN or SiC half-bridges where dead time optimization is not required. | Select LMG1205RVRR only when voltage stress remains below 100 V and fixed dead time suffices for ZVS margin. |
| UCC27611DR | 60-V max, 4-A sink / 2-A source, no LDO, no bootstrap switch, 150-V/ns CMTI, SOIC-8 package. | Targeted at medium-frequency Si MOSFET drivers with external bootstrap and simpler control requirements. | Choose UCC27611DR for cost-sensitive, non-GaN designs where 200-V isolation and GaN-specific features are unnecessary. |
Compared with LMG1210RVRR, LMG1205RVRR trades voltage headroom and dead-time flexibility for lower cost and smaller footprint, while UCC27611DR lacks integrated LDO, bootstrap control, and CMTI robustness - making LMG1210RVRR uniquely suited for 200-V GaN systems demanding precision timing and noise immunity.
Availability
LMG1210RVRR is available at Aetrix Electronics and suitable for high-speed DC-DC converters, RF envelope tracking systems, and Class-E wireless charging applications requiring stable component supply, long-term lifecycle support, and traceable GaN driver sourcing.
Supply support for LMG1210RVRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-performance gate drivers and GaN ecosystem solutions.
The LMG1210RVRR belongs to TI's advanced GaN FET driver product line, engineered specifically for ultra-high-frequency, high-efficiency power conversion where timing precision, noise immunity, and bootstrap reliability are critical.
FAQ
What is the maximum recommended operating frequency for the LMG1210RVRR?
The LMG1210RVRR is characterized and specified for operation up to 50 MHz, with verified performance in RF envelope tracking and Class-E wireless charging applications. This limit is supported by its 4 ns minimum pulse width, 0.5 ns unloaded rise/fall times, and stable propagation delay across temperature and CMTI stress - all validated in TI's SNOSD12D datasheet.
How does the LMG1210RVRR implement adjustable dead time?
The LMG1210RVRR provides independent dead time adjustment for high-to-low (DHL pin) and low-to-high (DLH pin) transitions in PWM mode. Each pin accepts an external resistor to VSS (20–1800 kΩ), generating a voltage that sets dead time from 0.5 ns to 20 ns per edge via internal RC filtering and voltage-to-delay conversion - detailed in Equation 4 and 5 of the LMG1210RVRR datasheet.
Can the LMG1210RVRR operate without the internal LDO enabled?
Yes - the LMG1210RVRR can bypass the internal LDO by connecting a stable 5 V ±5% supply directly to the VDD pin and tying VIN to VDD. In this configuration, the LDO is disabled, eliminating dropout voltage and quiescent current associated with regulation, while retaining full gate drive functionality and protection features.
What thermal protection mechanisms are built into the LMG1210RVRR?
The LMG1210RVRR incorporates three independent thermal shutdown thresholds: 150°C for low-side switching (disables both HO and LO), 160°C for high-side junction (disables HO only), and 160°C for LDO thermal shutdown (disables 5-V output). Hysteresis of 3–10°C prevents oscillation, and all thresholds are tested per JEDEC JESD22-A104.
Is the LMG1210RVRR pin-compatible with other devices in the LMG12xx family?
No - the LMG1210RVRR is not pin-compatible with LMG1205RVRR or LMG1212RVRR. While all share the RVR (WQFN-19) package, pin functions differ significantly: LMG1205 lacks DHL/DLH pins and uses different EN/PWM mapping, and LMG1212 adds additional diagnostics and different bootstrap control logic - requiring unique PCB layout for each part.
LMG1210RVRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 19-WFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.75V ~ 5.25V, 6V ~ 18V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 200 V
- Rise / Fall Time (Typ):
- 500ps, 500ps
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 19-WQFN (3x4)
LMG1210RVRR FAQ
1.How can I place an order for LMG1210RVRR through Aetrix?
Please submit a Request for Quotation (RFQ) for LMG1210RVRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LMG1210RVRR reliable?
The price and inventory of LMG1210RVRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG1210RVRR is usually 5 days.
3.What payment methods are accepted for LMG1210RVRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG1210RVRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LMG1210RVRR?
LMG1210RVRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LMG1210RVRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LMG1210RVRR?
For technical support, including LMG1210RVRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG1210RVRR requirements.
6.How does Aetrix verify that LMG1210RVRR is sourced from the original manufacturer or authorized distributors?
All LMG1210RVRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG1210RVRR meets industry standards.
7.What is the process for return or replacement of LMG1210RVRR?
All LMG1210RVRR units undergo pre-shipment inspection (PSI). If there is an issue with LMG1210RVRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LMG1210RVRR part is unused and in its original packaging.
Return procedure for LMG1210RVRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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