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Texas Instruments LMG1210RVRT
- Part No.:
- LMG1210RVRT
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 19-WFQFN Exposed Pad
- Datasheet:
-
LMG1210RVRT.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 19WQFN
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LMG1210RVRT from Texas Instruments is a 200-V, 1.5-A peak source / 3-A peak sink half-bridge gate driver IC optimized for GaN and high-speed MOSFETs in ultra-high-frequency power stages. It delivers 10-ns typical propagation delay, 3.4-ns high-side/low-side timing match, adjustable 0.5–20-ns dead time, and integrated 5-V LDO with 6–18-V input range - enabling efficient RF envelope tracking and Class-D audio amplifiers.
For engineers reviewing the LMG1210RVRT datasheet, LMG1210RVRT pinout, LMG1210RVRT application, or LMG1210RVRT equivalent, key selection criteria include CMTI rating (300 V/ns), HO-to-LO isolation capacitance (<1 pF), bootstrap diode control logic, dual-input vs. PWM-mode configuration, and thermal shutdown thresholds (150°C switching / 160°C high-side).
Technical Context
The LMG1210RVRT employs a proprietary high-voltage capacitor-based level shifter to achieve stable 300 V/ns common-mode transient immunity without propagation delay variation. Its internal bootstrap switch actively disables conduction during dead time to prevent overcharging and reduce reverse recovery losses in external bootstrap diodes.
Two functional modes are fixed at power-up: PWM mode (single input with resistor-programmable DHL/DLH dead-time adjustment) and Independent Input Mode (dedicated HI/LI control). The device integrates an LDO that regulates 6–18 V VIN to a stable 5-V VDD rail, while supporting direct 5-V bypass via VIN-to-VDD tie.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Operating Frequency | 50 MHz - enables use in RF envelope tracking and high-frequency DC-DC converters |
| Propagation Delay | 10 ns typical - minimizes timing uncertainty in fast-switching topologies |
| HS/LS Timing Match | 3.4 ns max - reduces required dead time, improving efficiency in hard-switched bridges |
| CMTI Rating | 300 V/ns - ensures reliable level shifting under high dV/dt noise in GaN-based systems |
| LDO Output | 5.0 V ±2.5% - powers gate drivers and external circuitry with low dropout (750 mV @ 100 mA) |
| Output Drive Strength | 1.5-A source / 3-A sink - directly drives high-Qg GaN FETs without external buffers |
| HO–LO Capacitance | <1 pF - limits cross-coupling and EMI in high-speed switching nodes |
| UVLO Thresholds | VDD: 4.05–4.50 V rising / 3.8–4.3 V falling - prevents erratic operation during brownout |
Pinout & Package
LMG1210RVRT is housed in a thermally enhanced 19-pin WQFN package (3.0 mm × 4.0 mm) with dual thermal pads connected to HS and VSS for optimal heat dissipation in high-power density layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| BST | Bootstrap diode anode node | Connects external bootstrap diode anode; internal switch controls charging path to prevent overvoltage |
| DHL | Dead-time high-to-low adjust input | Resistor-to-VSS sets HO falling to LO rising dead time (0.5–20 ns) in PWM mode |
| DLH | Dead-time low-to-high adjust input | Resistor-to-VSS sets LO rising to HO falling dead time (0.5–20 ns) in PWM mode |
| EN/HI | Enable or high-side control input | In PWM mode: enable signal; in IIM: dedicated high-side gate control |
| PWM/LI | PWM or low-side control input | In PWM mode: single input generating complementary outputs; in IIM: dedicated low-side gate control |
| HB | High-side bootstrap supply | Connects to cathode of external bootstrap diode; supplies high-side driver stage |
| HO | High-side gate driver output | Drives gate of high-side GaN FET or MOSFET; referenced to HS node |
| HS | Switch node / high-side ground | Internally connected pins (9,13,16); serves as return for high-side driver and level shifter |
| LO | Low-side gate driver output | Drives gate of low-side GaN FET or MOSFET; referenced to VSS |
| VDD | 5-V LDO output & low-side supply | Regulated 5-V rail powering low-side circuits; requires ≥0.3 µF ceramic capacitor to VSS |
| VIN | LDO input | Accepts 6–18 V input; tie to VDD to bypass LDO when 5-V supply is available |
| VSS | Low-side ground reference | Return path for low-side driver, LDO, and digital inputs; pins 3 and 7 are internally tied |
Key Features
| Feature | Design Value |
|---|---|
| Adjustable dead time | 0.5–20 ns per edge via external resistors on DHL/DLH - eliminates need for external dead-time generators |
| Integrated LDO | 5-V output from 6–18 V input - simplifies system-level power architecture and supports wide-input industrial rails |
| Bootstrap diode control | Internal series switch disables bootstrap path during dead time - reduces Qrr losses and prevents overcharge |
| High CMTI level shifter | 300 V/ns immunity with <3.4 ns timing mismatch - maintains signal integrity in noisy high-dV/dt environments |
| Thermal protection | Three independent thresholds: 150°C (switching disable), 160°C (HS disable), 160°C (LDO shutdown) - enables robust fault management |
| Low-inductance WQFN | 19-pin 3×4 mm package with dual thermal pads - minimizes gate loop inductance for clean GaN switching |
Applications
| High-Speed DC-DC Converters | RF Envelope Tracking |
|---|---|
Use Scenario: 1–10 MHz multi-phase buck converters delivering >10 A to FPGA or ASIC cores with tight voltage regulation. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling GaN FETs; provides matched timing and minimal dead time to maximize efficiency at high frequency. Use Value: 3.4-ns HS/LS match and 10-ns propagation delay reduce minimum on-time limitation, enabling higher switching frequencies without pulse distortion. | Use Scenario: Dynamic supply modulation in 5G base station power amplifiers requiring rapid, precise voltage scaling synchronized to RF envelope. IC Role / Device Role / Timing Role: High-bandwidth gate driver enabling sub-10 ns edge control of GaN HEMTs in envelope-tracking power stages. Use Value: 50-MHz capability and 4-ns minimum pulse width support fast transient response needed for LTE/5G modulation schemes. |
| Class-D Audio Amplifiers | Class-E Wireless Charging |
Use Scenario: High-fidelity, low-EMI audio amplifiers operating at 300–600 kHz with >90% efficiency and THD+N <0.01%. IC Role / Device Role / Timing Role: Dual-output half-bridge driver delivering precisely timed, low-jitter gate signals to GaN output stage. Use Value: HO–LO capacitance <1 pF and 300 V/ns CMTI suppress noise coupling into sensitive analog audio paths. | Use Scenario: Resonant wireless power transfer systems operating at 6.78 MHz or 13.56 MHz with >75% end-to-end efficiency. IC Role / Device Role / Timing Role: High-efficiency gate driver managing zero-voltage switching transitions in Class-E topology. Use Value: Adjustable dead time (0.5–20 ns) allows fine-tuning to match resonant tank characteristics and minimize switching losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LMG1205RVR | No adjustable dead time; fixed 5-ns dead time; lower 200-V rating; no LDO | Suitable for cost-sensitive designs where dead time is fixed and external 5-V rail exists | Select LMG1205RVR only if dead-time tuning is unnecessary and system already provides regulated 5-V supply |
| UCC27611DR | Single-channel, non-isolated driver; no bootstrap control; 5-V only supply; 150-V max HS voltage | Used in low-voltage half-bridges or as discrete high/low side drivers with external level shift | Choose UCC27611DR when designing split-rail gate drive or when HS voltage remains below 150 V |
Compared with LMG1210RVRT, LMG1205RVR lacks programmable dead time and integrated LDO, limiting flexibility in variable-frequency or wide-input designs; UCC27611DR offers higher peak current but no bootstrap management or high-side voltage capability, requiring external level-shifting circuitry for half-bridge use.
Availability
LMG1210RVRT is available at Aetrix Electronics and suitable for high-speed DC-DC converters, RF envelope tracking systems, and Class-D audio amplifiers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for LMG1210RVRT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-performance power conversion solutions.
The LMG1210RVRT belongs to TI's advanced GaN gate driver product line, engineered specifically for ultra-high-frequency, high-efficiency power stages using enhancement-mode GaN transistors in telecom, industrial, and audio applications.
FAQ
What is the maximum recommended operating frequency for the LMG1210RVRT?
The LMG1210RVRT is rated for operation up to 50 MHz, as confirmed in its official datasheet (SNOSD12D). This specification reflects tested performance under load with minimal pulse distortion, making the LMG1210RVRT suitable for RF envelope tracking and high-frequency resonant converters. Operation beyond 50 MHz may degrade timing accuracy or increase jitter due to parasitic limitations.
How does the LMG1210RVRT implement dead time adjustment?
The LMG1210RVRT adjusts dead time in PWM mode using external resistors connected from DHL and DLH pins to VSS. Each resistor sets independent dead time (0.5–20 ns) for high-to-low and low-to-high transitions via internal voltage dividers and RC filtering. The LMG1210RVRT does not support dynamic dead-time adjustment - values are fixed at power-up based on resistor values.
Can the LMG1210RVRT operate without an external bootstrap diode?
No - the LMG1210RVRT requires an external bootstrap diode connected between HB and BST pins. Its internal bootstrap switch controls conduction but does not replace the diode function. Omitting the diode prevents high-side gate drive activation, as no charge path exists to replenish the bootstrap capacitor during low-side conduction.
What thermal protection mechanisms are built into the LMG1210RVRT?
The LMG1210RVRT incorporates three independent thermal shutdown thresholds: 150°C triggers full switching disable (both HO/LO), 160°C disables only the high-side driver, and a separate 160°C threshold shuts down the internal LDO. These are documented in Section 6.5 of the SNOSD12D datasheet and activate without latch-up, recovering automatically upon cooling.
Is the LMG1210RVRT pin-compatible with other devices in the LMG12xx family?
No - the LMG1210RVRT is not pin-compatible with LMG1205RVR or LMG1212RVR. Differences include pin count (19 vs. 16), pin functions (e.g., DHL/DLH present only on LMG1210RVRT), and thermal pad configuration. PCB layout must be designed specifically for the LMG1210RVRT's RVR package footprint and connectivity.
LMG1210RVRT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 19-WFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.75V ~ 5.25V, 6V ~ 18V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 200 V
- Rise / Fall Time (Typ):
- 500ps, 500ps
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 19-WQFN (3x4)
LMG1210RVRT FAQ
1.How can I place an order for LMG1210RVRT through Aetrix?
Please submit a Request for Quotation (RFQ) for LMG1210RVRT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LMG1210RVRT reliable?
The price and inventory of LMG1210RVRT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG1210RVRT is usually 5 days.
3.What payment methods are accepted for LMG1210RVRT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG1210RVRT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LMG1210RVRT?
LMG1210RVRT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LMG1210RVRT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LMG1210RVRT?
For technical support, including LMG1210RVRT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG1210RVRT requirements.
6.How does Aetrix verify that LMG1210RVRT is sourced from the original manufacturer or authorized distributors?
All LMG1210RVRT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG1210RVRT meets industry standards.
7.What is the process for return or replacement of LMG1210RVRT?
All LMG1210RVRT units undergo pre-shipment inspection (PSI). If there is an issue with LMG1210RVRT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LMG1210RVRT part is unused and in its original packaging.
Return procedure for LMG1210RVRT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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