Diodes Incorporated LMN200B02-7

Overview

LMN200B02 from Diodes Incorporated is a dual-function discrete load switch integrating a pre-biased PNP transistor (Q1) and an N-MOSFET with integrated 37 kΩ gate pull-down resistor (Q2) in a single SOT-363 package. It delivers 200 mA continuous output current, features stable V_CE(SAT) ≤ −0.25 V at −200 mA, supports −50 V collector-emitter breakdown, and enables microcontroller-driven point-of-load switching with zero control-current loading.

For engineers reviewing the LMN200B02 datasheet, LMN200B02 pinout, LMN200B02 application, or LMN200B02 equivalent, this device serves as a compact, RoHS-compliant discrete solution for low-power load enable/disable functions where stable saturation voltage, built-in biasing, and MOSFET gate termination are required - especially in battery-powered portable systems and regulated power rail sequencing.

Technical Context

The LMN200B02 combines two independently usable semiconductor elements: Q1 is a pre-biased PNP transistor with 10 kΩ pull-up (R1) and 470 Ω input (R2) resistors, enabling direct logic-level control without external bias components; Q2 is a 60 V V_DSS, 115 mA continuous N-MOSFET with integrated 37 kΩ gate-to-source pull-down, ensuring defined off-state behavior during floating control conditions.

Both devices share thermal coupling on a common die substrate within the SOT-363 package, with total device power dissipation rated at 200 mW and R_θJA = 625 °C/W. The PNP's V_CE(SAT) remains stable across load current (−10 mA to −200 mA), while the MOSFET's R_DS(on) is specified at 1.4–3 Ω (V_GS = 5–10 V, I_D = 50–500 mA), supporting efficient low-side or high-side switching configurations.

Key Specifications

Pinout & Package

SOT-363 package: 6-pin, lead-free, green molding compound, UL 94V-0 rated, moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar discrete load switch applications.

Compared with AP22652W-7 and DMN2004LK-7, LMN200B02 uniquely integrates both a pre-biased PNP and a pull-down-equipped MOSFET in one SOT-363, offering dual-path control without external biasing - ideal for space-constrained, low-current discrete switching where component count reduction and guaranteed off-state behavior are critical.

Availability

LMN200B02 is available at Aetrix Electronics and suitable for portable battery management, point-of-load power sequencing, and industrial sensor interface applications requiring stable component supply and long-term obsolescence mitigation support.

Supply support for LMN200B02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for power management, signal integrity, and protection.

The LMN200B02 belongs to Diodes' discrete load switch portfolio, designed specifically for compact, low-component-count power control in space- and cost-sensitive portable and industrial systems.

FAQ

Can LMN200B02 be used in high-side switching configurations?

Yes - the integrated PNP transistor (Q1) is configured for high-side switching: its emitter connects to the positive supply rail, collector to the load, and base controlled by logic-level signals. The MOSFET (Q2) can simultaneously serve low-side functions, enabling dual-rail control. Thermal derating must be applied above 125°C ambient per the 1.6 mW/°C derating factor.

What is the maximum safe operating voltage for the PNP section?

The PNP section has V_CEO = −50 V and V_CBO = −50 V, meaning it supports up to 50 V across collector-emitter or collector-base in reverse bias. For forward conduction, the absolute maximum supply voltage is limited by power dissipation: at 200 mA and V_CE(SAT) = −0.25 V, power is 50 mW - well within the 200 mW total device limit.

Does the MOSFET's gate pull-down resistor affect switching speed?

Yes - the 37 kΩ internal gate pull-down increases turn-off time slightly compared to a direct gate drive, but datasheet switching characteristics (t_D(off) ≤ 40 ns) confirm compatibility with microcontroller GPIO toggling up to ~1 MHz. No external gate driver is needed for typical enable/disable use cases.

Is LMN200B02 still in active production?

No - Diodes Incorporated has marked LMN200B02 as obsolete (as stated in DS30658 Rev. 8-4). However, Aetrix Electronics maintains legacy inventory and offers extended lifecycle support, including cross-reference assistance and alternative sourcing guidance for design continuity.