Diodes Incorporated LMN400E01-7

Overview

LMN400E01 from Diodes Incorporated is a 400mA load switch integrating a pre-biased PNP transistor (Q1) and an ESD-protected N-channel MOSFET (Q2) in a single SOT363 package. It delivers stable V_CE(SAT) ≤ −0.6 V at −400 mA, supports V_DSS = 60 V and V_CEO = −50 V, and is used for point-of-load power control in portable battery-powered systems where microcontroller-driven on/off sequencing is required.

For engineers reviewing the LMN400E01 datasheet, LMN400E01 pinout, LMN400E01 application, or LMN400E01 equivalent, this dual-transistor discrete load switch offers verified current-handling capability, ESD-protected gate drive, and thermal performance validated up to +150°C junction temperature - critical for compact, low-power embedded power management designs.

Technical Context

The LMN400E01 implements a hybrid switching architecture: Q1 functions as a voltage-controlled PNP pass element with integrated base bias resistors (R1 = 10 kΩ, R2 = 220 Ω), enabling direct logic-level control without external biasing; Q2 operates as an ESD-hardened N-MOSFET (V_GS(th) = 1.6 V typ, R_DS(on) = 1.2 Ω @ V_GS = 10 V, I_D = 500 mA) used for auxiliary control or feedback paths.

Both transistors share thermal coupling within the SOT363 package (R_θJA = 625 °C/W), with independent maximum ratings: Q1 handles −400 mA continuous collector current and −50 V V_CEO; Q2 supports 300 mA continuous drain current and 60 V V_DSS. The device is optimized for automated assembly and ROHS-compliant "Green" manufacturing.

Key Specifications

Pinout & Package

SOT363 package: 6-pin, surface-mount, lead-free, green molding compound (UL 94V-0), 0.006 g weight, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-transistor load switch applications.

Compared with AP2141WG-7 and DMN3022LSD-13, the LMN400E01 uniquely combines pre-biased PNP switching with ESD-hardened N-MOSFET in one package - delivering both primary load control and auxiliary signaling capability without external components or layout overhead.

Availability

LMN400E01 is available at Aetrix Electronics and suitable for portable medical devices, USB-C peripheral hubs, and FPGA power sequencing applications requiring stable component supply despite its obsolete status - supported via legacy inventory and cross-reference assistance.

Supply support for LMN400E01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The LMN400E01 belongs to Diodes' discrete load switch portfolio, engineered specifically for space-constrained, battery-sensitive applications where integrated biasing, ESD resilience, and dual-transistor functionality reduce system-level complexity.

FAQ

Is LMN400E01 still in active production?

No - Diodes Incorporated has officially discontinued the LMN400E01 (marked OBSOLETE in DS30750 Rev. 9-4). However, Aetrix Electronics maintains legacy stock and supports design continuity through verified alternate sourcing and technical documentation for existing production programs.

Can LMN400E01 be used with 1.8 V logic control signals?

Yes - the PNP base input accepts VI(ON) down to −1.5 V (typ), making it compatible with 1.8 V microcontrollers when referenced to a negative control rail or configured with inverted logic. For positive-referenced 1.8 V GPIO, an external level-shifting transistor is required due to the device's negative-input architecture.

What is the maximum allowable power dissipation at 70°C ambient?

At T_A = 70°C, the LMN400E01's derated power dissipation is 148 mW, calculated as P_D = 200 mW − [(70 − 37.5) × 1.6 mW/°C]. This limits continuous 400 mA operation to ≤0.37 V total drop (V_CE(SAT) + V_DS(on)) under those conditions to avoid exceeding thermal limits.

Does the internal N-MOSFET support bidirectional current flow?

No - the N-MOSFET (Q2) is unidirectional: its body diode conducts only from source to drain. With source tied to Q1 collector (common in load-switch layouts), it blocks reverse current from load to input but cannot pass forward current from drain to source without gate bias - confirming its role as a controlled switch, not a rectifier.