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Analog Devices Inc. LT8418ACBZ-R7
- Part No.:
- LT8418ACBZ-R7
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 12-UFBGA, WLCSP
- Datasheet:
-
LT8418ACBZ-R7.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 12WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:1,131
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Product details
Overview
LT8418ACBZ-R7 from Analog Devices is a 100V half-bridge GaN gate driver with integrated smart bootstrap switch, split gate control, and TTL-compatible inputs. It delivers 4A peak source / 8A peak sink current, 0.6Ω top-side pull-up / 0.2Ω bottom-side pull-down resistance, and 10ns typical propagation delay with 1.5ns matching-enabling high-frequency (>500kHz), high-efficiency DC-DC converters in data center power supplies.
For engineers reviewing the LT8418ACBZ-R7 datasheet, LT8418ACBZ-R7 pinout, LT8418ACBZ-R7 application, or LT8418ACBZ-R7 equivalent, this page provides verified technical context, WLCSP package layout, real-world EMI-optimized gate drive implementation, and validated alternatives for GaN-based buck, half-bridge, and motor drive topologies.
Technical Context
The LT8418ACBZ-R7 integrates dual independent gate drivers (TGP/TGN and BGP/BGN) with programmable turn-on/turn-off slew rates via external resistors, enabling precise EMI suppression without sacrificing switching speed. Its smart bootstrap switch dynamically regulates BST voltage from VCC with <10mV dropout at low refresh and <1V at 100mA, eliminating external Schottky diodes while maintaining VBST ≈ VCC (3.85–5.5V).
It features independent TTL-compatible INT and INB inputs with 200kΩ internal pull-downs, 15V absolute max input rating, and no built-in shoot-through protection-requiring external PWM timing coordination. Undervoltage lockout (3.35V VCC UVLO, 3.1V BST UVLO) and overvoltage lockout (6.0V VCC OVLO) ensure robust GaN FET gate integrity under transient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 3.85V to 5.5V - powers logic and gate drivers; enables direct use with standard 5V controllers and avoids LDO overhead. |
| Peak Output Current | 4A source / 8A sink - drives high-QG GaN FETs (e.g., EPC2204) at >1MHz with minimal gate resistance. |
| Propagation Delay | 10ns typical (INT→TG, INB→BG) - supports sub-10ns dead-time control in high-frequency synchronous rectification. |
| Delay Matching | 1.5ns typical - ensures balanced top/bottom channel timing critical for zero-voltage switching (ZVS) stability. |
| Bootstrap Switch RON | 6Ω dynamic on-resistance - sustains low-loss BST charging across temperature while preventing overcharge during negative SW excursions. |
| Input Threshold | 1.4V–2.4V rising (INT/INB), 0.4V hysteresis - compatible with 3.3V/5V PWM controllers without level-shifting. |
| Package | 12-ball WLCSP (1.67mm × 1.67mm) - minimizes parasitic inductance for clean 2.5ns rise/fall times (CL = 1nF). |
Pinout & Package
LT8418ACBZ-R7 uses a 12-ball Wafer-Level Chip Scale Package (WLCSP) with 0.4mm pitch, optimized for ultra-low inductance and high-power-density layouts. Ball assignment follows JEDEC MO-220 standard CB-12-17.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 (BGN) | Bottom gate pull-down output | Connects to bottom GaN FET gate via resistor to independently tune turn-off slew rate and suppress ringing. |
| A2 (GND) | Power ground reference | Must be Kelvin-connected to bottom FET source with low-inductance trace to maintain signal integrity during 8A sink events. |
| A3/C4 (VCC) | Main supply rail | Dual-balled for low-impedance path; requires ≥4.7µF ceramic bypass to GND for stable 3.85–5.5V operation. |
| A4 (INB) | Bottom-side PWM input | TTL-compatible, 200kΩ internal pull-down; minimum 11ns pulse width ensures reliable switching at >90MHz effective frequency. |
| B1 (BGP) | Bottom gate pull-up output | Resistor-programmable turn-on strength; pairs with BGN for asymmetric gate drive optimization. |
| B4 (INT) | Top-side PWM input | Independent of INB; same electrical specs as INB but controls TGP/TGN outputs for high-side GaN switching. |
| C1/D4 (SW) | Switch node connection | Shared ball for high-current return path; connects to top FET source and BST capacitor negative terminal. |
| D1 (TGN) | Top gate pull-down output | Enables independent control of top FET turn-off; critical for managing Miller-induced false turn-on in bootstrapped configurations. |
| D2 (TGP) | Top gate pull-up output | Drives top GaN FET gate with 0.6Ω effective RON; requires Kelvin routing to SW to avoid bootstrap voltage error. |
| D3 (BST) | Bootstrap supply output | Internally switched from VCC; bypass with ≥100nF ceramic to SW to stabilize floating rail during high-dV/dt transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Smart integrated bootstrap switch | Eliminates external Schottky diode; maintains VBST ≈ VCC with <10mV dropout at light load and prevents overcharge during –3V SW undershoot. |
| Split-gate driver architecture | Four independent gate terminals (TGP/TGN/BGP/BGN) allow separate optimization of dV/dt for EMI reduction without compromising efficiency. |
| Matched propagation delay | 1.5ns typical mismatch between top and bottom channels enables precise dead-time tuning for ZVS in resonant topologies. |
| Default low-state logic | All inputs (INT/INB) and outputs (TGP/TGN/BGP/BGN) default to low via internal 200kΩ/500kΩ pull-downs-preventing unintended GaN turn-on during startup or fault. |
| Robust protection suite | VCC and BST UVLO/OVLO, thermal shutdown, and absolute max ratings up to 116V BST transient ensure reliability in 100V bus applications. |
Applications
| High-Frequency Buck Converters | Data Center VRMs |
|---|---|
|
Use Scenario: 48V-to-12V/20A buck converter operating at 500kHz with EPC2204 GaN FETs. IC Role / Device Role / Timing Role: Half-bridge gate driver providing matched 10ns propagation delay and split-gate control to minimize switching losses and enable >97% peak efficiency. Use Value: Enables compact, high-power-density VRM design with reduced gate drive loop inductance and elimination of bootstrap diode BOM line. |
Use Scenario: 48V input, dual-output (24V/10A + 12V/20A) power module for AI accelerators. IC Role / Device Role / Timing Role: Dual-channel GaN driver supporting interleaved buck stages with independent INT/INB timing and synchronized BST regulation. Use Value: Delivers >96% full-load efficiency with forced-air cooling and eliminates need for external bootstrap diodes across both outputs. |
| Class-D Audio Amplifiers | Industrial Motor Drives |
|
Use Scenario: 100W bridge-tied load (BTL) amplifier using half-bridge GaN output stage. IC Role / Device Role / Timing Role: High-speed gate driver delivering 2.5ns rise/fall times and <1.5ns delay matching to preserve audio signal fidelity at >500kHz PWM carrier. Use Value: Reduces THD+N by suppressing gate ringing and enabling precise dead-time control for clean zero-crossing switching. |
Use Scenario: 48V-powered BLDC motor controller with trapezoidal commutation at 20kHz switching. IC Role / Device Role / Timing Role: Robust half-bridge driver with 15V input tolerance and 100V BST rating for operation in noisy industrial environments. Use Value: Ensures reliable gate drive under voltage transients and enables fast fault recovery via TTL-compatible inputs tied to MCU GPIOs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge GaN driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC7060 | Supports up to 100V VCC, includes programmable dead time and floating grounds; lacks integrated bootstrap switch and split-gate outputs. | Better suited for high-side-referenced topologies requiring isolated gate drive; not optimized for ultra-high-frequency GaN where BST integration reduces layout complexity. | Select LTC7060 when system-level shoot-through risk demands hardware-enforced dead time or when driving discrete high-voltage MOSFETs instead of GaN. |
| LTC4449 | Lower voltage rating (38V max), 3.2A/4.5A peak current, no BST switch or split-gate control; designed for silicon MOSFETs, not GaN. | Targeted at cost-sensitive 12–24V industrial motor drives; cannot support 100V bus or GaN-specific gate drive requirements like low RON and fast dV/dt control. | Choose LTC4449 only for legacy silicon-based half-bridges below 38V; unsuitable as drop-in replacement for LT8418ACBZ-R7 in GaN designs. |
Compared with LTC7060 and LTC4449, the LT8418ACBZ-R7 uniquely combines integrated bootstrap switching, split-gate programmability, and 100V BST capability in a 1.67mm WLCSP-making it the only option that simultaneously enables high-frequency GaN operation, EMI-optimized slew control, and minimal external component count.
Availability
LT8418ACBZ-R7 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, data center VRMs, and Class-D audio amplifiers requiring stable component supply, long-term lifecycle assurance, and traceable GaN driver sourcing.
Supply support for LT8418ACBZ-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, power management, and high-speed connectivity markets.
The LT8418ACBZ-R7 belongs to Analog Devices' GaN-optimized gate driver product line, engineered specifically for high-efficiency, high-frequency power conversion in data centers, computing, and industrial systems where GaN FETs demand low-inductance, matched timing, and intelligent bootstrap management.
FAQ
What is the maximum switching frequency supported by the LT8418ACBZ-R7?
The LT8418ACBZ-R7 supports switching frequencies up to 1MHz in practical buck converter implementations, as validated in Analog Devices' typical application circuits (e.g., 48V-to-24V/10A at 500kHz–1MHz). Its 2.5ns rise/fall times, 10ns propagation delay, and 1.5ns channel matching make it suitable for high-frequency GaN operation-but actual max frequency depends on external GaN FET QG, gate resistance, and PCB layout parasitics. The LT8418ACBZ-R7 itself imposes no hard upper limit beyond its timing specifications.
Does the LT8418ACBZ-R7 include built-in shoot-through protection?
No, the LT8418ACBZ-R7 does not implement hardware-based shoot-through protection. Its INT and INB inputs are fully independent, and asserting both simultaneously turns on both top and bottom GaN FETs. System-level shoot-through prevention must be implemented externally via PWM controller dead-time insertion or MCU firmware coordination. This design choice preserves timing flexibility for advanced modulation schemes like ZVS and phase-shifted full-bridge control.
Can the LT8418ACBZ-R7 drive both enhancement-mode and depletion-mode GaN FETs?
The LT8418ACBZ-R7 is designed for enhancement-mode GaN HEMTs (e.g., EPC, GaN Systems devices) requiring positive gate drive relative to source. It does not support depletion-mode GaN FETs, which require negative turn-off bias-because its outputs (TGP/TGN/BGP/BGN) swing only from SW or GND reference, with no negative voltage generation capability. All confirmed applications in the datasheet use enhancement-mode GaN devices.
What is the purpose of the split-gate terminals (TGP/TGN/BGP/BGN) on the LT8418ACBZ-R7?
The split-gate terminals allow independent adjustment of turn-on (via TGP/BGP) and turn-off (via TGN/BGN) slew rates using external resistors-enabling fine-grained EMI optimization without degrading efficiency. For example, a higher resistor on TGN slows turn-off to reduce dv/dt-induced noise, while a lower resistor on TGP maintains fast turn-on for low conduction loss. This capability is essential for meeting CISPR-32 conducted emissions limits in high-density power supplies.
Is the LT8418ACBZ-R7 pin-compatible with any other Analog Devices gate drivers?
No, the LT8418ACBZ-R7 is not pin-compatible with any other Analog Devices gate driver. Its 12-ball WLCSP footprint, unique pinout (e.g., dual-balled VCC and SW, dedicated BST and split-gate terminals), and GaN-specific feature set (smart bootstrap, 0.2Ω pull-down) differ fundamentally from packages like SOIC-16 (LTC4449) or 16-pin QFN (LTC7060). Migration requires full PCB redesign and layout optimization for low-inductance GaN gate loops.
LT8418ACBZ-R7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 12-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 3.85V ~ 5.5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 2.5ns, 2.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 12-WLCSP (1.67x1.67)
LT8418ACBZ-R7 FAQ
1.How can I place an order for LT8418ACBZ-R7 through Aetrix?
Please submit a Request for Quotation (RFQ) for LT8418ACBZ-R7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LT8418ACBZ-R7 reliable?
The price and inventory of LT8418ACBZ-R7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LT8418ACBZ-R7 is usually 5 days.
3.What payment methods are accepted for LT8418ACBZ-R7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LT8418ACBZ-R7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LT8418ACBZ-R7?
LT8418ACBZ-R7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LT8418ACBZ-R7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LT8418ACBZ-R7?
For technical support, including LT8418ACBZ-R7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LT8418ACBZ-R7 requirements.
6.How does Aetrix verify that LT8418ACBZ-R7 is sourced from the original manufacturer or authorized distributors?
All LT8418ACBZ-R7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LT8418ACBZ-R7 meets industry standards.
7.What is the process for return or replacement of LT8418ACBZ-R7?
All LT8418ACBZ-R7 units undergo pre-shipment inspection (PSI). If there is an issue with LT8418ACBZ-R7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LT8418ACBZ-R7 part is unused and in its original packaging.
Return procedure for LT8418ACBZ-R7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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