Analog Devices Inc. LTC1154HS8#PBF

Overview

LTC1154HS8#PBF from Analog Devices (formerly Linear Technology) is a micropower high-side N-channel MOSFET driver with integrated charge pump, overcurrent protection, thermal shutdown interface, and open-drain status reporting. It operates from 4.5V to 18V supply, draws only 8µA standby current, fully enhances N-FETs without external capacitors, and targets high-reliability industrial and automotive power switching applications.

For engineers reviewing the LTC1154HS8#PBF datasheet, LTC1154HS8#PBF pinout, LTC1154HS8#PBF application, or LTC1154HS8#PBF equivalent, key selection criteria include its –40°C to 150°C operating range, 100mV drain-sense threshold with programmable delay, active-high IN/active-low EN control logic, and SOIC-8 package with Kelvin VS connection for accurate current sensing.

Technical Context

The LTC1154HS8#PBF implements an adaptive on-chip charge pump to generate gate voltage up to VS + 25V, enabling full enhancement of low-R_DS(on) N-channel MOSFETs in high-side configurations. Its analog comparator continuously monitors V_DS via the DS pin against a precision 100mV internal reference.

Fault response is hierarchical: short-circuit turn-off occurs in ≤40µs (VS = 12V), while thermal shutdown is triggered via external PTC thermistor connected to SD pin. Status output is open-drain with 400µA sink capability and 0.4V max low-level voltage at rated load.

Key Specifications

Pinout & Package

Package: 8-Lead Plastic SOIC (S8), RoHS-compliant, moisture-sensitive level 3, body dimensions 4.9mm × 6.0mm × 1.75mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side MOSFET driver applications.

Compared with TPS27081AQPWPRQ1 and MAX14914AATJ+, the LTC1154HS8#PBF offers superior micropower operation (8µA vs >100µA), wider temperature range (–40°C to 150°C vs –40°C to 125°C), and direct PTC thermal interface - making it optimal for standalone, high-reliability, low-quiescent-power high-side switching.

Availability

LTC1154HS8#PBF is available at Aetrix Electronics and suitable for industrial motor control, automotive power distribution, and battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for LTC1154HS8#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving industrial, automotive, communications, and healthcare markets.

The LTC1154 product line delivers micropower, protected high-side gate drivers for demanding power-switching applications where reliability, low IQ, and integrated fault management are critical design requirements.

FAQ

What is the maximum supply voltage rating for the LTC1154HS8#PBF?

The LTC1154HS8#PBF has an absolute maximum supply voltage of 22V. Continuous operation is specified from 4.5V to 18V. Exceeding 22V may cause permanent damage. The device's internal charge pump and protection circuitry are designed to operate reliably within this 4.5V–18V functional range, with thermal derating applied above 12V in high-temperature environments. Always observe the 22V absolute maximum limit in layout and system design.

How does the drain sense (DS) pin function in the LTC1154HS8#PBF?

The DS pin on the LTC1154HS8#PBF compares the voltage drop across an external sense resistor to an internal 100mV reference. When V_DS exceeds the threshold (75–125mV over temperature), the gate is rapidly discharged. An RC network can be added between the sense resistor and DS pin to introduce programmable delay, preventing false triggering during inrush events. The pin features high-impedance CMOS input with ESD protection and must not be forced beyond the VS–GND rails.

Can the LTC1154HS8#PBF drive a MOSFET with R_DS(on) below 10mΩ?

Yes, the LTC1154HS8#PBF can drive low-R_DS(on) MOSFETs, but the sense resistor value must be scaled accordingly to maintain accurate current limiting. For example, a 2.7A limit with a 10mΩ FET requires a 37mΩ sense resistor to develop ~100mV. The DS pin's 100mV threshold remains fixed; lowering R_SENSE proportionally increases trip current. Layout care is essential to minimize parasitic resistance in the sense path to preserve accuracy.

What is the purpose of the Kelvin-connected VS pin on the LTC1154HS8#PBF?

VS on the LTC1154HS8#PBF serves a dual role: it supplies power to internal circuitry and provides a precision Kelvin reference for the DS pin comparator. This separate sense path rejects voltage drop in the supply trace, ensuring the 100mV current threshold remains accurate even with significant PCB trace resistance between the power source and the IC. Connecting VS directly to the high-side of the sense resistor is mandatory for specified current-limit performance.

Does the LTC1154HS8#PBF require external components for basic operation?

No - the LTC1154HS8#PBF requires zero external components for core functionality: the charge pump, 100mV reference, and logic interfaces are fully integrated. Only three external elements are typically used: a 51kΩ pull-up on STATUS, a PTC thermistor on SD for thermal shutdown, and a sense resistor on DS. Optional RC networks may be added to DS or G for inrush delay or EMI control, but are not required for turn-on/turn-off operation.