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Analog Devices Inc. LTC1155CS8#PBF
- Part No.:
- LTC1155CS8#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LTC1155CS8#PBF.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,139
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Product details
Overview
LTC1155CS8#PBF from Analog Devices is a dual high-side N-channel MOSFET gate driver IC with integrated charge pump, enabling efficient high-side switching in low-voltage systems. It operates from 4.5V to 18V supply, delivers 8µA standby current and 85µA operating current per channel, and provides short-circuit protection via drain-sense threshold of 100mV. It is used in laptop power bus switching and battery-powered load control.
For engineers reviewing the LTC1155CS8#PBF datasheet, LTC1155CS8#PBF pinout, LTC1155CS8#PBF application, or LTC1155CS8#PBF equivalent, key selection criteria include micropower operation, internal charge pump for gate boosting above VS, dual independent channels with overcurrent shutdown, SO-8 package compatibility, and TTL/CMOS logic interface support.
Technical Context
The LTC1155CS8#PBF integrates two independent high-side drivers, each featuring adaptive charge pump circuitry that generates gate voltage up to 9V above VS (e.g., 15V at VS = 12V), eliminating need for external boost components. Its analog comparator compares drain-sense voltage against a precision 100mV internal reference to detect overcurrent.
Each channel includes TTL-to-CMOS input conversion with 1.3V threshold and ~100mV hysteresis, low-quiescent-current regulator biasing, and controlled gate charge/discharge paths to limit EMI. Short-circuit turn-off time is ≤30µs, and gate drive is latched off until input is cycled after fault detection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 4.5V to 18V - supports wide-input battery and industrial rails without external regulation |
| Standby Current (per channel) | 8µA - enables ultra-low-power sleep mode in portable systems |
| Operating Current (per channel) | 85µA at VS = 5V - maintains efficiency during active switching |
| Drain Sense Threshold | 100mV ±20mV - sets precise current-limit point using small-value sense resistors (e.g., 0.02Ω for 5A trip) |
| Gate Voltage Above VS | 6.8V at VS = 6V - ensures full enhancement of standard logic-level N-MOSFETs (e.g., IRLZ34) |
| Turn-On Time | 50–250µs (VS = 5V, CGATE = 1000pF) - balances speed and EMI control |
| Short-Circuit Turn-Off Time | 5–30µs - rapidly disables gate drive to protect MOSFET under fault |
Pinout & Package
Package: 8-Lead Plastic SO (SO-8, narrow 0.150-inch body, JEDEC MS-012).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN1 / IN2 | Logic Input | TTL/CMOS-compatible digital inputs controlling respective high-side channels; high-impedance CMOS gates with ESD protection |
| G1 / G2 | Gate Drive Output | High-side gate driver outputs capable of sourcing >10mA peak; voltage boosted above VS by internal charge pump |
| DS1 / DS2 | Drain Sense Input | Analog inputs comparing voltage drop across external sense resistor to 100mV reference; shorting to VS disables overcurrent protection |
| VS | Power Supply | Main supply input (4.5V–18V); also serves as Kelvin reference for sense resistor top node |
| GND | Ground Reference | Common return for logic, analog, and charge pump circuits; must be low-impedance connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent high-side drivers | Enables simultaneous control of two loads (e.g., dual power rails or H-bridge half-bridges) without cross-talk |
| Integrated charge pump | Eliminates external capacitors or diodes-reduces BOM count and PCB area for gate-boosted N-MOSFET solutions |
| Micropower operation | 8µA total standby current allows integration into always-on battery systems without significant drain |
| Programmable short-circuit response | RC delay network on DSx pins allows tuning of fault response time (µs to seconds) to avoid false triggers on inrush |
| Logic-level compatible inputs | 1.3V threshold with hysteresis accepts 3.3V/5V logic directly-no level-shifting required |
Applications
| Laptop Power Bus Switching | SCSI Termination Power Switching |
|---|---|
Use Scenario: Selectively enable/disable +5V power to peripheral busses in portable computing systems during suspend/resume cycles. IC Role / Device Role / Timing Role: Dual high-side switch providing isolated, low-drop power gating with automatic short-circuit shutdown. Use Value: Prevents system-wide brownout during hot-plug events and eliminates need for P-channel FETs with higher RDS(on). | Use Scenario: Dynamically power SCSI termination resistors only when bus is active, reducing idle power in server backplanes. IC Role / Device Role / Timing Role: Precision-controlled high-side switch with fast fault response (<30µs) to protect termination network from overcurrent. Use Value: Enables compliance with SCSI-2/3 power management specs while maintaining signal integrity via low-RDS(on) N-MOSFETs. |
| Cellular Phone Power Management | Relay and Solenoid Drivers |
Use Scenario: Managing power to RF modules, camera flash LEDs, or audio amplifiers in GSM/UMTS handsets with tight battery life constraints. IC Role / Device Role / Timing Role: Micropower dual gate driver delivering 85µA/channel ON current and <10µs fault recovery for burst-mode loads. Use Value: Extends talk-time by minimizing quiescent loss while ensuring robust protection against antenna VSWR faults. | Use Scenario: Driving 12V automotive relays or 24V industrial solenoids requiring clean turn-on/turn-off with inductive kickback suppression. IC Role / Device Role / Timing Role: High-side driver with controlled dV/dt and integrated overcurrent latch to prevent coil burnout during stuck-armature conditions. Use Value: Replaces discrete P-FET + protection IC solutions, reducing footprint and improving reliability in harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS28225DR | Single-channel, 12V max supply, no integrated sense comparator; requires external current-sense amp | Lacks autonomous short-circuit shutdown - needs MCU supervision for fault handling | Choose when system already implements digital current monitoring and needs faster switching (25ns tON) |
| MAX14914ATP+ | Dual-channel, 36V supply, integrated 12-bit ADC and diagnostics; 1.5mA quiescent current | Includes SPI interface and health reporting - over-engineered for simple on/off control | Prefer when functional safety (IEC 61508) or predictive maintenance data is required |
Compared with TPS28225DR and MAX14914ATP+, the LTC1155CS8#PBF uniquely combines micropower operation (8µA), self-contained overcurrent protection, and dual-channel independence in an SO-8 package-making it optimal for cost-sensitive, battery-operated systems where simplicity and ultra-low standby current are critical.
Availability
LTC1155CS8#PBF is available at Aetrix Electronics and suitable for laptop power bus switching, SCSI termination control, and cellular phone power management requiring stable component supply and long-term industrial availability.
Supply support for LTC1155CS8#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and communications markets.
The LTC1155CS8#PBF belongs to Analog Devices' legacy power management portfolio designed specifically for micropower, high-side N-MOSFET replacement in battery-powered and low-voltage industrial systems.
FAQ
What is the maximum gate drive voltage capability of the LTC1155CS8#PBF relative to its supply?
The LTC1155CS8#PBF generates gate drive voltage up to 9.0V above VS at 12V supply, and 6.8V above VS at 6V supply, as specified in the Electrical Characteristics table. This internal charge pump output ensures full enhancement of standard logic-level N-channel MOSFETs without external components. The LTC1155CS8#PBF achieves this using on-chip capacitors and oscillator circuitry, eliminating need for external boost diodes or capacitors.
How does the LTC1155CS8#PBF implement short-circuit protection and what is the typical response time?
The LTC1155CS8#PBF compares voltage across an external sense resistor to a 100mV internal reference; if exceeded, it discharges the gate within 5–30µs depending on supply voltage and load capacitance. The LTC1155CS8#PBF latches off until the input is toggled, preventing automatic retry during persistent faults. An RC network on the DSx pin allows programmable delay to avoid false trips on capacitor inrush.
Can the LTC1155CS8#PBF drive both logic-level and standard-threshold N-MOSFETs reliably?
Yes-the LTC1155CS8#PBF's gate drive voltage exceeds VS by up to 9V, enabling reliable enhancement of both logic-level (e.g., IRLZ34, RDS(on) = 0.05Ω @ VGS = 5V) and standard-threshold (e.g., IRFZ44, RDS(on) = 0.028Ω @ VGS = 10V) N-MOSFETs. The LTC1155CS8#PBF datasheet confirms operation with VGS ≥ 7.5V at VS = 6V, satisfying minimum VGS requirements for most discrete power FETs.
What is the operating temperature range for the LTC1155CS8#PBF and how does it affect performance?
The LTC1155CS8#PBF is rated for 0°C to 70°C ambient operation, with electrical characteristics guaranteed across this range. Quiescent current increases to ≤20µA at 70°C (vs. 8µA typ. at 25°C), and gate drive voltage above VS remains within specification. The LTC1155CS8#PBF's thermal resistance θJA is 150°C/W in SO-8 package, requiring minimal heatsinking for typical 100mA gate drive loads.
Is the LTC1155CS8#PBF pin-compatible with other variants in the LTC1155 family?
Yes-the LTC1155CS8#PBF shares identical pinout and functionality with LTC1155IS8#PBF (–40°C to 85°C), LTC1155CN8#PBF (PDIP, 0°C–70°C), and LTC1155IN8#PBF (PDIP, –40°C–85°C). All variants use the same S8/SO-8 or N8/PDIP footprints and require no layout changes when substituting within temperature grade. The LTC1155CS8#PBF differs only in temperature rating and packaging, not electrical behavior.
LTC1155CS8#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 18V
- Logic Voltage - VIL, VIH:
- 0.8V, 2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
LTC1155CS8#PBF FAQ
1.How can I place an order for LTC1155CS8#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC1155CS8#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC1155CS8#PBF reliable?
The price and inventory of LTC1155CS8#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1155CS8#PBF is usually 5 days.
3.What payment methods are accepted for LTC1155CS8#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1155CS8#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC1155CS8#PBF?
LTC1155CS8#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC1155CS8#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC1155CS8#PBF?
For technical support, including LTC1155CS8#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1155CS8#PBF requirements.
6.How does Aetrix verify that LTC1155CS8#PBF is sourced from the original manufacturer or authorized distributors?
All LTC1155CS8#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1155CS8#PBF meets industry standards.
7.What is the process for return or replacement of LTC1155CS8#PBF?
All LTC1155CS8#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1155CS8#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC1155CS8#PBF part is unused and in its original packaging.
Return procedure for LTC1155CS8#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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