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Analog Devices Inc. LTC1155CS8#TR
- Part No.:
- LTC1155CS8#TR
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LTC1155CS8#TR.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
LTC1155CS8#TR from Analog Devices is a dual high-side N-channel MOSFET gate driver IC with integrated charge pump, 8 µA standby current, 4.5V–18V supply range, and built-in overcurrent shutdown via drain-sense threshold (100 mV). It enables efficient high-side switching in battery-powered systems such as laptop power bus control and SCSI termination.
For engineers reviewing the LTC1155CS8#TR datasheet, LTC1155CS8#TR pinout, LTC1155CS8#TR application, or LTC1155CS8#TR equivalent, key selection criteria include micropower operation, short-circuit protection timing, gate voltage boost capability above VS, SO-8 package compatibility, and logic-level input thresholds for TTL/CMOS interfacing.
Technical Context
The LTC1155CS8#TR integrates two independent adaptive charge pump circuits that generate gate voltages up to VS + 9 V at 5 V supply and VS + 18 V at 12 V supply-enabling full enhancement of low-RDS(ON) N-channel MOSFETs without external components. Its analog comparator monitors drain-to-source voltage drop across an external sense resistor against a precision 100 mV internal reference.
Each channel features TTL/CMOS-compatible inputs with 1.3 V threshold and ~100 mV hysteresis, low-standby-current regulation (8 µA per device), and controlled turn-on/turn-off times (50–2000 µs depending on VS and CGATE). Short-circuit detection triggers sub-30 µs gate discharge via dedicated N-channel transistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 4.5 V to 18 V - supports wide-input battery and industrial rails without external regulators |
| Standby Quiescent Current | 8 µA - enables multi-year operation in always-on low-power systems |
| Gate Drive Voltage Boost | VS + 6.0 V (min) at 5 V supply - ensures full enhancement of N-MOSFETs with VGS(th) up to 4 V |
| Drain Sense Threshold | 100 mV ±20 mV - sets precise current-limit point with minimal sense-resistor power loss |
| Turn-On Time (5 V, 1 nF) | 50–250 µs - balances EMI control and switching speed for capacitive loads |
| Short-Circuit Turn-Off Time | 5–30 µs - limits MOSFET energy dissipation during fault events to safe SOA levels |
| Input Logic Compatibility | TTL/CMOS - interfaces directly with microcontrollers and logic families without level-shifting |
Pinout & Package
Package: 8-Lead Plastic SO (SO-8, Narrow 0.150", JEDEC MS-012AA). RoHS-compliant, lead-free finish (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN1 / IN2 | CMOS/TTL Input | Active-high logic control for respective gate driver; high-impedance (>1 MΩ), ESD-protected |
| G1 / G2 | Gate Drive Output | Drives MOSFET gate to VS or boosted voltage; capable of sourcing >100 mA peak |
| DS1 / DS2 | Drain Sense Input | Compares voltage drop across external sense resistor to 100 mV reference; open-drain latch reset |
| VS | Power Supply Input | Primary supply rail; also serves as Kelvin reference for sense circuitry - must connect near sense resistors |
| GND | Analog/Digital Ground | Common return for logic, charge pump, and sense circuitry; requires low-impedance PCB connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent high-side drivers | Enables compact dual-load control (e.g., redundant power rails or H-bridge half-bridge) |
| No external charge pump components | Reduces BOM count and layout area; eliminates capacitor aging and placement sensitivity |
| Programmable short-circuit delay via RC network | Allows safe inrush handling (capacitors/lamps) while retaining fast fault response (<30 µs) for hard shorts |
| Controlled dV/dt gate switching | Minimizes EMI emissions and prevents false triggering in noisy environments |
| Reverse-battery protection support | Enables robust automotive and portable designs using optional series ground resistor (300 Ω) |
Applications
| Laptop Power Bus Switching | SCSI Termination Power Control |
|---|---|
Use Scenario: Selectively powers/disconnects CPU core voltage rails during sleep/wake transitions in portable computing platforms. IC Role / Device Role / Timing Role: Dual high-side switch enabling independent control of multiple voltage domains with micropower standby. Use Value: 8 µA quiescent current extends battery life; short-circuit shutdown protects system during hot-plug events. | Use Scenario: Supplies regulated termination voltage to SCSI bus lines only when active devices are present. IC Role / Device Role / Timing Role: High-side load switch with fast fault response preventing bus lockup during cable insertion/removal. Use Value: Drain-sense protection avoids damage from transient overcurrents caused by unterminated stubs or ESD. |
| Cellular Phone Power Management | Relay and Solenoid Driver Interface |
Use Scenario: Controls power delivery to RF power amplifiers, camera modules, and display backlight circuits. IC Role / Device Role / Timing Role: Micropower gate driver managing discrete N-MOSFETs in multi-rail PMIC subsystems. Use Value: Wide 4.5–18 V input accommodates Li-ion, Li-poly, and USB PD sources; logic-compatible inputs simplify MCU interface. | Use Scenario: Replaces mechanical relays in industrial I/O modules and automotive body controllers. IC Role / Device Role / Timing Role: Solid-state high-side switch driving inductive coils with controlled turn-on/off slew rates. Use Value: Eliminates contact bounce and wear; integrated overcurrent protection prevents coil burnout during jamming or stall. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS27082LDR | Single-channel, 2.7–18 V supply, 1.2 A max load, integrated current limit (no external sense resistor) | Fixed current limit vs programmable trip point; no drain-sense flexibility for precision current monitoring | Preferred for space-constrained single-load applications where fixed 1.2 A limit suffices and sense-resistor BOM reduction is critical |
| MAX14914ATP+ | Dual-channel, 9–36 V supply, integrated diagnostics (open-load, overtemp), SPI interface | Higher voltage rating and digital configurability; lacks micropower standby (120 µA typical) | Selected when system-level diagnostics, higher bus voltage tolerance, or programmable fault responses are required |
Compared with LTC1155CS8#TR, TPS27082LDR offers simpler integration but less design flexibility in current sensing, while MAX14914ATP+ adds intelligence and ruggedness at the cost of quiescent power and analog simplicity.
Availability
LTC1155CS8#TR is available at Aetrix Electronics and suitable for laptop power bus switching, SCSI termination control, and cellular phone power management requiring stable component supply and long-lifecycle support.
Supply support for LTC1155CS8#TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving industrial, communications, automotive, and consumer markets.
The LTC1155 product line was designed specifically for micropower, high-side N-MOSFET switching in battery-operated and space-constrained systems-emphasizing ultra-low standby current, integrated protection, and minimal external component count.
FAQ
What is the maximum gate drive voltage boost provided by the LTC1155CS8#TR?
The LTC1155CS8#TR provides gate drive voltage up to VS + 9.0 V minimum at 5 V supply and VS + 18 V minimum at 12 V supply, enabling full enhancement of N-channel MOSFETs with VGS(th) up to 4 V. This is achieved via an on-chip adaptive charge pump with no external capacitors required. The LTC1155CS8#TR datasheet specifies these values under electrical characteristics Table 1, Conditions column "l".
Does the LTC1155CS8#TR support true dual independent operation?
Yes, the LTC1155CS8#TR contains two fully independent high-side gate drivers with separate IN, G, and DS pins. Each channel operates autonomously-input latching, sense threshold comparison, and gate discharge are isolated. This allows concurrent control of two distinct loads, such as dual power rails or complementary half-bridge legs. The LTC1155CS8#TR block diagram (page 6) confirms separate analog and digital sections per channel.
How does the drain-sense overcurrent protection work in the LTC1155CS8#TR?
The LTC1155CS8#TR compares the voltage drop across an external sense resistor (connected between MOSFET source and ground) to an internal 100 mV reference. If the drop exceeds the threshold, the input latch resets and the gate is rapidly discharged (<30 µs). An optional RC network between DS pin and sense resistor adds programmable delay to prevent false trips during inrush. This mechanism is detailed in Applications Information (pages 7–8) of the LTC1155CS8#TR datasheet.
Can the LTC1155CS8#TR be used with P-channel MOSFETs?
No-the LTC1155CS8#TR is specifically optimized for N-channel high-side switching. Its charge pump architecture boosts gate voltage above VS to ensure full enhancement of N-MOSFETs, which is unnecessary and incompatible with P-MOSFETs requiring gate voltage below source. Using it with P-MOSFETs would result in improper biasing and potential failure. The LTC1155CS8#TR datasheet explicitly states "replaces P-channel high side MOSFETs" by enabling superior N-channel alternatives.
What is the operating temperature range for the LTC1155CS8#TR?
The LTC1155CS8#TR is rated for 0°C to 70°C ambient operating temperature, as indicated by the "C" grade suffix in its ordering code and confirmed in the Absolute Maximum Ratings table (page 2) of the LTC1155CS8#TR datasheet. This range applies to the SO-8 package variant (S8) and is validated across all electrical specifications unless otherwise noted.
LTC1155CS8#TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 18V
- Logic Voltage - VIL, VIH:
- 0.8V, 2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
LTC1155CS8#TR FAQ
1.How can I place an order for LTC1155CS8#TR through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC1155CS8#TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC1155CS8#TR reliable?
The price and inventory of LTC1155CS8#TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1155CS8#TR is usually 5 days.
3.What payment methods are accepted for LTC1155CS8#TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1155CS8#TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC1155CS8#TR?
LTC1155CS8#TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC1155CS8#TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC1155CS8#TR?
For technical support, including LTC1155CS8#TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1155CS8#TR requirements.
6.How does Aetrix verify that LTC1155CS8#TR is sourced from the original manufacturer or authorized distributors?
All LTC1155CS8#TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1155CS8#TR meets industry standards.
7.What is the process for return or replacement of LTC1155CS8#TR?
All LTC1155CS8#TR units undergo pre-shipment inspection (PSI). If there is an issue with LTC1155CS8#TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC1155CS8#TR part is unused and in its original packaging.
Return procedure for LTC1155CS8#TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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