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Analog Devices Inc. LTC1155IS8#PBF
- Part No.:
- LTC1155IS8#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LTC1155IS8#PBF.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,761
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Product details
Overview
LTC1155IS8#PBF from Analog Devices is a dual high-side N-channel MOSFET gate driver IC with integrated charge pump, enabling efficient high-side switching in low-voltage systems. It operates from 4.5V to 18V, delivers 8µA standby current and 85µA operating current per channel, and provides short-circuit protection via drain-sense threshold (100mV typical) - ideal for battery-powered laptop power bus switching and SCSI termination.
For engineers reviewing the LTC1155IS8#PBF datasheet, LTC1155IS8#PBF pinout, LTC1155IS8#PBF application, or LTC1155IS8#PBF equivalent, key selection criteria include its dual-channel high-side drive capability, internal charge pump eliminating external components, -40°C to +85°C industrial temperature rating, and integrated overcurrent shutdown with programmable RC delay.
Technical Context
The LTC1155IS8#PBF integrates two independent CMOS-compatible gate drivers, each featuring an adaptive on-chip charge pump that boosts gate voltage up to VS + 9V (typical at VS = 5V), enabling full enhancement of low-RDS(ON) N-channel MOSFETs. Its analog comparator compares drain-sense voltage against a precision 100mV internal reference to detect overcurrent.
Each channel includes TTL/CMOS input logic with 1.3V threshold and 100mV hysteresis, controlled gate charge/discharge timing (tON = 50–200 µs, tOFF = 10–36 µs), and fast short-circuit turn-off (<30 µs). The device uses Kelvin-connected VS pin for accurate sense reference and supports RC-delayed fault response to avoid false triggering on capacitive inrush loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 4.5V to 18V - supports wide-input battery and industrial rails without external regulation |
| Standby Current (per channel) | 8µA - enables ultra-low-power "sleep" mode in portable systems |
| Operating Current (per channel) | 85µA at VS = 5V - minimizes system power overhead during active operation |
| Drain Sense Threshold | 100mV (typical) - sets precise current-limit point using small-value sense resistors (e.g., 0.02Ω for 5A trip) |
| Gate Drive Voltage Boost | VS + 6.8V (typical at VS = 6V) - ensures robust N-MOSFET enhancement even at low supply voltages |
| Turn-ON Time | 50µs (to VS + 2V, VS = 5V, CGATE = 1000pF) - balances speed and EMI control |
| Short-Circuit Turn-OFF Time | 5µs (to <1V, VS = 5V, CGATE = 1000pF) - protects MOSFETs under hard shorts |
Pinout & Package
Package: 8-Lead Plastic SO (SO-8, narrow 0.150-inch body, JEDEC MS-012).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN1 / IN2 | CMOS/TTL Input | Active-high logic inputs controlling respective gate drivers; high-impedance with ESD protection |
| G1 / G2 | Gate Drive Output | Drives MOSFET gate above VS via internal charge pump; high-impedance when off |
| DS1 / DS2 | Drain Sense Input | Compares voltage drop across external sense resistor to 100mV reference; resets latch on overcurrent |
| VS | Power Supply / Kelvin Sense Reference | Provides power and serves as Kelvin reference for both sense comparators; must connect directly to supply source |
| GND | Analog/Digital Ground | Common return for logic, charge pump, and sense circuitry; requires low-impedance PCB connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent high-side drivers | Enables compact dual-load control (e.g., redundant power rails or H-bridge half-bridge) without cross-talk |
| On-chip charge pump | Eliminates external diodes/capacitors - reduces BOM count and layout area for gate boost |
| Programmable short-circuit delay | RC network (RDLY/CDLY) between DSx and sense resistor prevents false trips on lamp/capacitor inrush |
| Logic-compatible inputs | Accepts TTL and CMOS levels (VINH = 2.0V min, VINL = 0.8V max) - interfaces directly with microcontrollers and logic families |
| Controlled slew-rate gate drive | Minimizes EMI during switching while maintaining fast fault response - no external gate resistors needed |
Applications
| Laptop Power Bus Switching | SCSI Termination Power Control |
|---|---|
Use Scenario: Selectively enables/disables 5V power to peripheral bays or hot-swap modules in portable computing platforms. IC Role / Device Role / Timing Role: Dual high-side switch driver providing isolated, current-limited power delivery with auto-reset fault recovery. Use Value: Replaces discrete P-channel MOSFETs and support circuitry, reducing solution size by >40% and enabling micropower sleep states. | Use Scenario: Supplies regulated termination voltage to SCSI bus lines only when devices are present and active. IC Role / Device Role / Timing Role: Precision current-limited high-side switch ensuring stable 3.3V/5V termination under varying load conditions. Use Value: Prevents bus contention and excessive current draw during hot insertion/removal using built-in 100mV sense threshold. |
| Cellular Phone Power Management | Relay and Solenoid Driver |
Use Scenario: Controls power to RF front-end modules, display backlight, or audio amplifiers in GSM/UMTS handsets. IC Role / Device Role / Timing Role: Low-quiescent-current high-side switch enabling rapid ON/OFF cycling with minimal battery drain. Use Value: 8µA standby current extends battery life in always-on standby modes; fast turn-off (<30µs) prevents relay chatter. | Use Scenario: Drives 12V automotive relays or 24V industrial solenoids requiring surge-tolerant, protected switching. IC Role / Device Role / Timing Role: High-side driver with programmable inrush delay and short-circuit lockout for inductive load safety. Use Value: Eliminates need for flyback diodes and external current-sense ICs - simplifies design and improves reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS2051BDR | Single-channel 500mA USB power switch; no charge pump, fixed 100ms soft-start, no drain-sense protection | Limited to low-current, low-voltage USB ports; lacks programmable overcurrent response and dual-channel capability | Select only for single-rail 5V USB power distribution where micropower and high-side N-MOSFET drive are not required |
| LM5050-1MMX/NOPB | Single-channel ideal diode controller; no integrated gate driver, requires external MOSFET, no short-circuit shutdown | Designed for OR-ing and reverse-polarity protection, not active high-side switching with fault management | Choose when implementing redundancy or back-to-back MOSFET configurations - not for direct replacement in LTC1155IS8#PBF's dual-switch role |
Compared with TPS2051BDR and LM5050-1MMX/NOPB, the LTC1155IS8#PBF uniquely delivers dual independent high-side drive with on-chip charge pump, 100mV precision current limiting, and RC-programmable fault delay - making it irreplaceable for compact, protected, battery-efficient dual-load switching.
Availability
LTC1155IS8#PBF is available at Aetrix Electronics and suitable for laptop power bus switching, SCSI termination control, and cellular phone power management requiring stable component supply, industrial temperature range (-40°C to +85°C), and long-term obsolescence mitigation.
Supply support for LTC1155IS8#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving industrial, communications, automotive, and healthcare markets.
The LTC1155 product line was designed specifically for micropower, protected high-side N-channel MOSFET switching in space- and energy-constrained systems - emphasizing integration, reliability, and ease of use in battery-powered and industrial control applications.
FAQ
What is the maximum supply voltage rating for the LTC1155IS8#PBF?
The absolute maximum supply voltage for the LTC1155IS8#PBF is 22V. Continuous operation is specified from 4.5V to 18V. Exceeding 22V may cause permanent damage. The device's internal charge pump and protection circuits are optimized for this 4.5V–18V range, and operation above 18V is not characterized or guaranteed. Always observe derating guidelines for thermal and reliability margins in the final design.
Does the LTC1155IS8#PBF require external components for gate boosting?
No, the LTC1155IS8#PBF does not require external components for gate boosting. It integrates a fully self-contained charge pump circuit with on-chip capacitors, enabling gate drive voltages up to VS + 9V (typical) without external diodes or capacitors. This eliminates board space, cost, and layout complexity associated with discrete charge pump implementations - a core design advantage confirmed in the datasheet's "No External Charge Pump Components" feature list.
How does the drain sense protection work on the LTC1155IS8#PBF?
The LTC1155IS8#PBF compares the voltage drop across an external sense resistor (connected between MOSFET source and ground) to an internal 100mV reference. When the drop exceeds ~100mV, the driver latches off and discharges the gate within 5–30µs. An external RC network (RDLY/CDLY) can be added to delay this response, preventing false triggers during capacitor charging or lamp inrush - a function explicitly detailed in the Applications Information section.
What is the operating temperature range of the LTC1155IS8#PBF?
The LTC1155IS8#PBF is rated for an operating temperature range of –40°C to +85°C, corresponding to the "I" grade suffix. This is confirmed in the ORDER INFORMATION table and Absolute Maximum Ratings section of the datasheet. It is distinct from the "C" grade (0°C to 70°C) and obsolete "M" grade (–55°C to 125°C), and is suitable for industrial and extended-temperature embedded applications.
Can the LTC1155IS8#PBF drive both channels simultaneously?
Yes, the LTC1155IS8#PBF supports fully independent and simultaneous operation of both channels. Each channel has separate INx, Gx, and DSx pins with no shared analog or digital resources that would limit concurrent use. The datasheet's Block Diagram and Electrical Characteristics confirm independent quiescent current, turn-on/off timing, and sense thresholds per channel - enabling true dual-load control without sequencing constraints.
LTC1155IS8#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 18V
- Logic Voltage - VIL, VIH:
- 0.8V, 2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
LTC1155IS8#PBF FAQ
1.How can I place an order for LTC1155IS8#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC1155IS8#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC1155IS8#PBF reliable?
The price and inventory of LTC1155IS8#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1155IS8#PBF is usually 5 days.
3.What payment methods are accepted for LTC1155IS8#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1155IS8#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC1155IS8#PBF?
LTC1155IS8#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC1155IS8#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC1155IS8#PBF?
For technical support, including LTC1155IS8#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1155IS8#PBF requirements.
6.How does Aetrix verify that LTC1155IS8#PBF is sourced from the original manufacturer or authorized distributors?
All LTC1155IS8#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1155IS8#PBF meets industry standards.
7.What is the process for return or replacement of LTC1155IS8#PBF?
All LTC1155IS8#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1155IS8#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC1155IS8#PBF part is unused and in its original packaging.
Return procedure for LTC1155IS8#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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