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Analog Devices Inc. LTC1155IS8#TRPBF

Part No.:
LTC1155IS8#TRPBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixLTC1155IS8#TRPBF.pdf
Description:
IC GATE DRVR HIGH-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,475

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Product details

Overview

LTC1155IS8#TRPBF from Analog Devices is a dual high-side N-channel MOSFET gate driver IC with integrated charge pump, enabling efficient high-side switching in low-voltage systems. It operates from 4.5V to 18V, delivers 8µA standby current and 85µA operating current per channel, and provides short-circuit protection via drain-sense threshold (100mV typical). It is used in laptop power bus switching, SCSI termination, and cellular phone power management.

For engineers reviewing the LTC1155IS8#TRPBF datasheet, LTC1155IS8#TRPBF pinout, LTC1155IS8#TRPBF application, or LTC1155IS8#TRPBF equivalent, key selection criteria include micropower operation, internal charge pump for gate boosting, dual independent channels with overcurrent shutdown, SO-8 package compatibility, and –40°C to +85°C industrial temperature range.

Technical Context

The LTC1155IS8#TRPBF integrates two independent high-side drivers, each with TTL/CMOS-compatible inputs, adaptive charge pump circuitry generating gate voltage up to VS + 9V (at VS = 12V), and analog comparator-based drain-sense protection referenced to an internal 100mV threshold. Its logic section uses low-quiescent-current regulators and TTL-to-CMOS converters to minimize standby power.

Each channel features controlled turn-on/off times (e.g., 50–200 µs tON, 10–36 µs tOFF at VS = 5V, CGATE = 1000 pF) and fast short-circuit response (5–30 µs tSC). The device supports RC-delayed overcurrent detection and includes ESD-protected, rail-referenced input and sense pins.

Key Specifications

ParameterValue and Actual Design Meaning
Supply Voltage Range4.5V to 18V - supports battery-powered and wide-input industrial rails without external regulation.
Standby Current (per channel)8 µA - enables long-term sleep-mode operation in portable electronics.
Operating Current (per channel)85 µA at VS = 5V - ensures minimal system power overhead during active switching.
Drain Sense Threshold100 mV typical - sets precise current-limit point using small-value sense resistors (e.g., 0.02 Ω for 5 A trip).
Gate Drive Voltage BoostVS + 6.8 V typical at VS = 6V - fully enhances standard logic-level N-MOSFETs without external boost components.
Turn-On Time50 µs (to VS + 2V) at VS = 5V, CGATE = 1000 pF - balances EMI control and switching speed for low-frequency loads.
Short-Circuit Turn-Off Time5 µs (to <1 V) at VS = 5V, CGATE = 1000 pF - rapidly disables FET under fault to prevent thermal runaway.

Pinout & Package

Package: 8-Lead Plastic SO (SO-8, narrow 0.150", JEDEC MS-012), RoHS-compliant, rated for –40°C to +85°C operation.

Pin/TerminalCircuit RoleDesign Meaning
IN1 / IN2CMOS/TTL InputHigh-impedance logic inputs with 1.3 V threshold and 100 mV hysteresis; must be grounded when unused.
G1 / G2Gate Drive OutputDrives N-MOSFET gate above VS via internal charge pump; high-impedance when boosted, capable of sourcing >10 mA peak.
DS1 / DS2Drain Sense InputCompares voltage drop across external sense resistor to internal 100 mV reference; resets latch on overcurrent.
VSPower Supply InputProvides bias for all circuitry and Kelvin connection point for sense resistor top node; must connect directly to supply source.
GNDGround ReferenceCommon return for logic, analog, and protection circuits; requires low-impedance PCB connection.

Key Features

FeatureDesign Value
Dual independent high-side driversEnables simultaneous control of two separate power paths (e.g., dual-rail power switching or H-bridge half-bridge control).
Integrated charge pump with no external capacitorsEliminates need for external flying capacitors or diodes, reducing BOM count and board space in compact designs.
Programmable overcurrent protection with RC delayAllows safe startup into high-inrush loads (capacitors, lamps) while retaining fast fault response for hard shorts.
Micropower standby and active operation8 µA quiescent current per channel extends battery life in always-on portable systems without sacrificing responsiveness.
Logic-compatible inputs with ESD protectionAccepts 3.3 V or 5 V logic directly; built-in clamp diodes prevent damage from transient overvoltage on IN/DS pins.

Applications

Laptop Power Bus SwitchingSCSI Termination Power Control

Use Scenario: Selectively enables/disables 5 V power to peripheral busses in notebook computers during suspend/resume cycles.

IC Role / Device Role / Timing Role: Dual high-side switch controlling two independent 5 V rails with coordinated soft-start and fault isolation.

Use Value: Reduces system standby power by >95% versus discrete P-channel solutions; eliminates need for external current-sense amplifiers.

Use Scenario: Supplies regulated termination voltage to SCSI bus lines only when host controller is active, minimizing noise and leakage.

IC Role / Device Role / Timing Role: High-side driver with programmable delay ensuring clean enable timing relative to bus arbitration signals.

Use Value: Prevents bus contention during hot-plug events; built-in short-circuit shutdown protects against connector misinsertion faults.

Cellular Phone Power ManagementRelay and Solenoid Driver Interface

Use Scenario: Controls power delivery to RF power amplifiers, camera modules, and display backlights in multi-rail mobile handsets.

IC Role / Device Role / Timing Role: Micropower dual gate driver providing isolated, sequenced power-up/down with fault reporting capability.

Use Value: Enables sub-10 µA deep-sleep mode; integrated 100 mV sense threshold allows use of ultra-low-Rsense (<0.01 Ω) for minimal voltage drop.

Use Scenario: Replaces mechanical relays in industrial I/O modules and automotive body controllers for silent, wear-free switching.

IC Role / Device Role / Timing Role: High-side driver with controlled dV/dt limiting to suppress contact arcing and EMI during solenoid coil de-energization.

Use Value: Eliminates relay coil flyback diodes and snubbers; fast short-circuit shutdown prevents coil burnout during jammed actuator conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-side gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPS28225DRSingle-channel, 16 V max, no integrated charge pump - requires external bootstrap capacitor; 1.5 µA quiescent current.Designed for high-frequency synchronous rectification (up to 2 MHz); lacks drain-sense protection and RC delay capability.Choose for high-speed DC/DC converter top-side drive where efficiency at >100 kHz matters more than fault robustness.
MAX14914ATP+Dual-channel, 36 V max, integrated current sensing and diagnostics; 25 µA quiescent current; SPI interface.Targeted at industrial PLC output modules; includes open-load detection, thermal shutdown, and fault register reporting.Choose for factory automation systems requiring diagnostic feedback and higher voltage tolerance, not battery-constrained micropower apps.

Compared with TPS28225DR and MAX14914ATP+, the LTC1155IS8#TRPBF uniquely combines micropower standby (8 µA), self-contained charge pumping, and analog drain-sense protection in an SO-8 package - making it optimal for cost-sensitive, low-frequency, safety-critical power switching where layout simplicity and fault resilience are prioritized over communication or speed.

Availability

LTC1155IS8#TRPBF is available at Aetrix Electronics and suitable for laptop power bus switching, SCSI termination control, and cellular phone power management requiring stable component supply and guaranteed long-term industrial temperature support.

Supply support for LTC1155IS8#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial, communications, and automotive markets.

The LTC1155 product line was designed specifically for micropower, high-side N-MOSFET replacement in battery-operated and low-voltage industrial systems - emphasizing integration, fault resilience, and ease of use without external passive components.

FAQ

What is the maximum supply voltage rating for the LTC1155IS8#TRPBF?

The absolute maximum supply voltage for the LTC1155IS8#TRPBF is 22 V. Continuous operation is specified from 4.5 V to 18 V. Exceeding 22 V may cause permanent damage. The device's internal charge pump and protection circuitry are optimized for this 4.5–18 V range, and operation beyond 18 V voids parametric guarantees. Always observe derating guidelines in high-temperature environments.

Does the LTC1155IS8#TRPBF require external components for gate boosting?

No, the LTC1155IS8#TRPBF does not require external components for gate boosting. It integrates a fully functional charge pump with on-chip capacitors, enabling gate drive voltages up to VS + 9 V (typical) without external diodes or flying capacitors. This simplifies layout and reduces BOM count - a key differentiator versus bootstrap-based alternatives that mandate external components.

How does the drain-sense overcurrent protection work in the LTC1155IS8#TRPBF?

The LTC1155IS8#TRPBF compares the voltage drop across an external sense resistor (connected between MOSFET source and ground) to an internal 100 mV reference. When the drop exceeds this threshold, the input latch resets and the gate is rapidly discharged. An optional RC network between the sense resistor and DS pin adds programmable delay to avoid false triggering on inrush currents.

Can the LTC1155IS8#TRPBF drive logic-level N-channel MOSFETs at 5 V supply?

Yes, the LTC1155IS8#TRPBF can fully enhance logic-level N-channel MOSFETs at 5 V supply. At VS = 5 V, its charge pump delivers VGATE up to ~11.8 V (VS + 6.8 V typical), well above the 4.5 V VGS(th) threshold of common logic-level FETs like IRLZ34 or IRLR024. This ensures low RDS(on) conduction and minimal power loss in 5 V systems.

What is the operating temperature range of the LTC1155IS8#TRPBF?

The LTC1155IS8#TRPBF is rated for an operating temperature range of –40°C to +85°C. This "I" grade designation distinguishes it from the "C" grade (0°C to +70°C) and confirms qualification for industrial environments. Thermal performance data (θJA = 150°C/W) and absolute maximum ratings are validated across this full range.

LTC1155IS8#TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.5V ~ 18V
Logic Voltage - VIL, VIH:
0.8V, 2V
Current - Peak Output (Source, Sink):
-
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

LTC1155IS8#TRPBF FAQ

1.How can I place an order for LTC1155IS8#TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC1155IS8#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC1155IS8#TRPBF reliable?

The price and inventory of LTC1155IS8#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1155IS8#TRPBF is usually 5 days.

3.What payment methods are accepted for LTC1155IS8#TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1155IS8#TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC1155IS8#TRPBF?

LTC1155IS8#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC1155IS8#TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC1155IS8#TRPBF?

For technical support, including LTC1155IS8#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1155IS8#TRPBF requirements.

6.How does Aetrix verify that LTC1155IS8#TRPBF is sourced from the original manufacturer or authorized distributors?

All LTC1155IS8#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1155IS8#TRPBF meets industry standards.

7.What is the process for return or replacement of LTC1155IS8#TRPBF?

All LTC1155IS8#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1155IS8#TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC1155IS8#TRPBF part is unused and in its original packaging.

Return procedure for LTC1155IS8#TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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