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Analog Devices Inc. LTC1157CS8#PBF
- Part No.:
- LTC1157CS8#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LTC1157CS8#PBF.pdf
- Description:
- IC GATE DRVR HI/LOW SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:231
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Product details
Overview
LTC1157CS8#PBF from Analog Devices (formerly Linear Technology) is a dual micropower high-side/low-side N-channel MOSFET gate driver optimized for 3.3V and 5V supply systems. It integrates an internal charge pump to generate gate drive up to 8.8V above supply (13.8V vs ground at 5V), enabling full enhancement of logic-level and standard N-channel MOSFETs in battery-powered power management circuits such as notebook computer load switching and reverse-battery-protected battery chargers.
For engineers reviewing the LTC1157CS8#PBF datasheet, LTC1157CS8#PBF pinout, LTC1157CS8#PBF application, or LTC1157CS8#PBF equivalent, key selection criteria include its 3µA standby current, controlled 30–300µs turn-on time with 1000pF gate load, 5.4V gate-boost above 3.3V supply, SOIC-8 package compatibility, and dual independent channel operation without external charge pump components.
Technical Context
The LTC1157CS8#PBF implements two independent CMOS-input, charge-pump-based gate drivers with ultra-low quiescent current regulation. Each channel features active-high logic inputs with 50mV hysteresis, input thresholds scaled to 15% and 70% of VS, and ESD-protected high-impedance gates.
Its internal oscillator-driven charge pump delivers regulated gate voltage boost (4.5–5.4V above VS at 3.3V, 7.5–8.8V at 5V) without external capacitors. Gate discharge is actively controlled to limit dV/dt and suppress EMI, with turn-off times as low as 10µs into 1000pF.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 2.7V to 5.5V - supports mixed 3.3V/5V system rails and Li-ion battery input (3–4 cells). |
| Standby Current (per device) | 3µA at VS = 3.3V - enables multi-week battery life in always-on portable subsystems. |
| Operating Current (per driver) | 80µA at VS = 3.3V - sustains continuous switching without thermal derating in compact layouts. |
| Gate Voltage Boost | 5.4V above VS (typ.) at 3.3V supply - fully enhances logic-level N-MOSFETs (e.g., IRLR024) in high-side configuration. |
| Turn-On Time | 30–300µs (to VS +1V, 1000pF load) - balances fast response with inrush current control for capacitive loads. |
| Input Thresholds | VINH = 70% × VS, VINL = 15% × VS - ensures noise immunity and compatibility across 3.3V/5V logic families. |
| Output Voltage Rating | VS + 12V max - accommodates high-side switching into 12V loads (e.g., motor drivers, LED strings). |
Pinout & Package
Package: 8-lead plastic SOIC (SO-8), 3.9mm × 4.9mm body, 1.27mm pitch, RoHS-compliant lead-free finish (#PBF).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5 | No Connect (NC) | Internally unused; must be left floating or tied to GND per layout best practice - no electrical function. |
| 2 | GATE 1 (G1) | High-impedance boosted output driving N-MOSFET gate; capable of sourcing >1mA peak to charge 1000pF in <300µs. |
| 3 | GND | Power and signal reference ground; series 300Ω resistor recommended for reverse-battery protection. |
| 4 | IN1 | Active-high CMOS input with hysteresis; drives channel 1 when ≥70% × VS; draws ±1µA max. |
| 6 | GATE 2 (G2) | Independent boosted gate driver output identical in spec to G1 - enables dual-load or H-bridge half-bridge control. |
| 7 | VS | Positive supply input (2.7–5.5V); powers internal regulator, oscillator, and charge pump - requires local 0.1µF bypass. |
| 8 | IN2 | Active-high CMOS input for channel 2; electrically isolated from IN1 - supports asynchronous dual-switching control. |
Key Features
| Feature | Design Value |
|---|---|
| No external charge pump components | On-chip oscillator and flying capacitor eliminate need for external diodes/capacitors - reduces BOM count and PCB area by ≥4 parts. |
| Controlled gate rise/fall times | Programmed slew rate limits EMI emissions and prevents supply rail collapse during simultaneous switching of large MOSFETs. |
| 3.3V/5V logic compatibility | Input thresholds scale with VS (15%/70%) - eliminates level shifters when interfacing with µP GPIO, CPLD, or ASIC control signals. |
| Ultra-low standby current | 3µA total device current with both inputs low - extends shelf life and runtime in sleep-mode battery systems (e.g., palmtop PCs). |
| Reverse battery protection support | Ground pin tolerates –3.6V with 300Ω series resistor - enables robust front-end protection without additional ICs or diodes. |
Applications
| Notebook Computer Power Management | Palmtop Computer Power Management |
|---|---|
|
Use Scenario: Selective powering of USB peripherals, display backlight, or SSD modules during suspend/resume cycles. IC Role / Device Role / Timing Role: Dual high-side switch controller enabling independent 3.3V rail sequencing with <300µs turn-on latency. Use Value: Eliminates P-channel MOSFETs and their higher RDS(ON), reducing voltage drop by up to 120mV at 1A load current. |
Use Scenario: Dynamic power gating of RF transceivers and memory banks in handheld PDAs. IC Role / Device Role / Timing Role: Micropower dual gate driver managing two independent 3.3V domains with <3µA quiescent draw. Use Value: Extends battery runtime by >15% versus discrete P-FET solutions due to lower static loss and no body-diode conduction. |
| Battery Charging and Management | Stepper Motor and DC Motor Control |
|
Use Scenario: Reverse-polarity protected charging path enable for single-cell Li-ion packs in portable medical devices. IC Role / Device Role / Timing Role: High-side switch driver with integrated ground-referenced fault detection via 300Ω resistor. Use Value: Prevents destructive reverse-current flow without adding Schottky diodes - maintains >98% charging efficiency. |
Use Scenario: Half-bridge drive for unidirectional DC motor or bipolar stepper coil in battery-powered instrumentation. IC Role / Device Role / Timing Role: Dual independent gate driver supplying complementary boosted gate voltage to N-MOSFET pairs. Use Value: Enables compact, efficient H-bridge implementation using only N-channel FETs - avoids P-channel cost and RDS(ON) penalty. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-side/low-side MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS28225DR | Higher 2.5mA quiescent current; 12V max gate drive; requires external bootstrap capacitor for high-side. | Targeted at industrial motor drives with >1A loads; not optimized for sub-100µA standby. | Choose TPS28225DR only when >1A peak gate current or 12V+ supply rails dominate design requirements. |
| MAX5072ASA+ | Integrated 5V LDO; 10µA standby; single-channel; no internal charge pump - requires external boost for high-side N-FET. | Designed for telecom DC-DC sequencers; lacks dual independent outputs and gate-boost capability. | Prefer MAX5072ASA+ only when system already provides boosted gate voltage and needs integrated bias supply. |
Compared with TPS28225DR and MAX5072ASA+, the LTC1157CS8#PBF uniquely combines dual-channel operation, on-chip charge pump, 3µA standby, and SOIC-8 footprint - making it the only solution that enables true micropower dual N-FET switching without external components in space-constrained portable designs.
Availability
LTC1157CS8#PBF is available at Aetrix Electronics and suitable for notebook computer power management, palmtop power sequencing, and battery charging systems requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.
Supply support for LTC1157CS8#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices (acquired Linear Technology in 2017) is a global leader in high-performance analog, mixed-signal, and power management semiconductors, serving precision instrumentation, communications, and industrial markets.
The LTC1157CS8#PBF belongs to Linear's legacy micropower power management portfolio, engineered specifically for ultra-low-quiescent-current load switching in portable 3.3V/5V systems where battery life and board space are critical constraints.
FAQ
What is the maximum supply voltage rating for the LTC1157CS8#PBF?
The LTC1157CS8#PBF has an absolute maximum supply voltage (VS) of 7V. Operation beyond this limit risks permanent damage. The recommended operating range is 2.7V to 5.5V, aligning with standard Li-ion battery packs (3–4 cells) and regulated 3.3V/5V rails. Exceeding 5.5V may degrade gate-boost accuracy and increase quiescent current beyond datasheet specifications.
Can the LTC1157CS8#PBF drive standard N-channel MOSFETs at 3.3V supply?
Yes - the LTC1157CS8#PBF generates up to 5.4V above VS (8.7V vs ground) at 3.3V supply, fully enhancing logic-level N-MOSFETs like IRLR024 (VGS(th) ≤ 2.0V, RDS(ON) specified at VGS = 4.5V). Standard N-FETs (VGS(th) ≤ 3.0V) also operate reliably, though RDS(ON) will be higher than at 5V drive - verify conduction loss at actual load current.
Does the LTC1157CS8#PBF require external capacitors for its charge pump?
No - the LTC1157CS8#PBF integrates all charge pump capacitance on-die. No external flying capacitors, diodes, or timing components are required. A 0.1µF ceramic bypass capacitor on the VS pin is mandatory for stable operation, but the charge pump itself functions autonomously with zero external parts.
What is the thermal performance of the LTC1157CS8#PBF in SOIC-8 package?
The LTC1157CS8#PBF in SOIC-8 has θJA = 150°C/W. At 80µA per driver (160µA total) and 3.3V supply, power dissipation is ~0.53mW - resulting in negligible junction temperature rise (<0.1°C) under typical conditions. Derating is unnecessary below 100mA total output current, even in sealed enclosures.
How does the LTC1157CS8#PBF handle reverse battery connection?
The LTC1157CS8#PBF supports reverse battery protection via a 300Ω resistor in series with the GND pin. With –3.6V applied, current is limited to <12mA, preventing latch-up or oxide damage. The IC remains functional during normal operation since its 3µA standby current causes only ~0.9mV drop across the resistor - preserving ground reference integrity.
LTC1157CS8#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side or Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 3.3V ~ 5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
LTC1157CS8#PBF FAQ
1.How can I place an order for LTC1157CS8#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC1157CS8#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC1157CS8#PBF reliable?
The price and inventory of LTC1157CS8#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1157CS8#PBF is usually 5 days.
3.What payment methods are accepted for LTC1157CS8#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1157CS8#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC1157CS8#PBF?
LTC1157CS8#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC1157CS8#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC1157CS8#PBF?
For technical support, including LTC1157CS8#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1157CS8#PBF requirements.
6.How does Aetrix verify that LTC1157CS8#PBF is sourced from the original manufacturer or authorized distributors?
All LTC1157CS8#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1157CS8#PBF meets industry standards.
7.What is the process for return or replacement of LTC1157CS8#PBF?
All LTC1157CS8#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1157CS8#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC1157CS8#PBF part is unused and in its original packaging.
Return procedure for LTC1157CS8#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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