Analog Devices Inc. LTC1693-1CS8#TRPBF

Overview

LTC1693-1CS8#TRPBF from Analog Devices (formerly Linear Technology) is a dual noninverting N-channel MOSFET driver in an 8-lead SOIC package. It delivers 1.5A peak output current, 16ns rise/fall times at VCC = 12V with 1nF load, and features 1GΩ electrical isolation between drivers - enabling independent high-side and low-side gate drive in isolated topologies like forward converters and telecom power supplies.

For engineers reviewing the LTC1693-1CS8#TRPBF datasheet, LTC1693-1CS8#TRPBF pinout, LTC1693-1CS8#TRPBF application, or LTC1693-1CS8#TRPBF equivalent, key selection criteria include its dual noninverting output polarity, VCC-independent CMOS input thresholds with 1.2V hysteresis, undervoltage lockout (4V threshold), thermal shutdown (145°C), and SO-8 package compatibility with industrial ambient temperature range (0°C to 70°C).

Technical Context

The LTC1693-1CS8#TRPBF integrates two electrically isolated, noninverting driver channels sharing no internal reference - allowing one driver to operate floating relative to the other. Each channel uses a rail-to-rail CMOS output stage with 1.4A high-side and 1.7A low-side peak current capability, optimized for fast charging/discharging of high-gate-charge MOSFETs.

Its input stage employs a 4V internal regulator to decouple VIH/VIL thresholds (2.6V/1.4V typ.) from VCC variation, while 1.2V hysteresis suppresses noise-induced false triggering. Undervoltage lockout disables outputs below 4V, and thermal shutdown activates at 145°C with 20°C hysteresis - both grounding outputs to prevent unintended MOSFET turn-on.

Key Specifications

Pinout & Package

Package: 8-lead plastic SOIC (SO-8, narrow 0.150"), JEDEC MS-012, θJA = 135°C/W, TJMAX = 150°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual noninverting MOSFET driver applications.

Compared with IXDN604PI and TPS28225DR, the LTC1693-1CS8#TRPBF uniquely combines dual noninverting outputs, 1GΩ inter-driver isolation, and integrated fault protection - making it the only choice for isolated high-side/low-side drive in SO-8 without external components.

Availability

LTC1693-1CS8#TRPBF is available at Aetrix Electronics and suitable for two-transistor forward converters, isolated telecom power supplies, motor/relay control interfaces, and charge-pump voltage multipliers requiring stable component supply across industrial temperature grades.

Supply support for LTC1693-1CS8#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains full product support, datasheet documentation, and long-term supply commitment for legacy Linear parts.

The LTC1693 family was designed specifically for high-efficiency, high-speed gate driving of N-channel MOSFETs in isolated and non-isolated DC/DC converters, motor controls, and telecom infrastructure - emphasizing low quiescent current, robust noise immunity, and integrated safety features.

FAQ

What is the maximum allowable voltage difference between GND1 and GND2 on the LTC1693-1CS8#TRPBF?

The LTC1693-1CS8#TRPBF specifies a maximum GND1–GND2 voltage difference of ±100V under normal operating conditions. This rating is validated by the 1GΩ isolation resistance measured at 75V bias, enabling safe use in high-side floating configurations such as two-transistor forward converters. Exceeding ±100V may compromise isolation integrity or trigger latent failure modes.

Does the LTC1693-1CS8#TRPBF support 3.3V logic inputs while operating from a 12V VCC supply?

Yes, the LTC1693-1CS8#TRPBF supports 3.3V logic inputs with VCC = 12V due to its VCC-independent input thresholds (VIH = 2.6V, VIL = 1.4V typ.) and 1.2V hysteresis. The internal 4V regulator decouples input sensitivity from supply voltage, eliminating level-shifter requirements. Input bias current remains below ±10µA, ensuring compatibility with standard CMOS microcontrollers and PWM controllers.

How does the undervoltage lockout (UVLO) function on the LTC1693-1CS8#TRPBF affect output behavior?

When VCC drops below 4V, the LTC1693-1CS8#TRPBF's UVLO circuit disables the input buffer and actively pulls both OUT1 and OUT2 low - not to high-impedance. This ensures external MOSFETs remain safely off during brown-out or incomplete power-up sequences. Outputs stay disabled until VCC rises above 4.25V (typical hysteresis), preventing oscillatory turn-on near the threshold.

Can the LTC1693-1CS8#TRPBF drive both high-side and low-side N-channel MOSFETs in a half-bridge without additional level-shifting components?

Yes - the LTC1693-1CS8#TRPBF's dual isolated channels allow direct high-side N-MOSFET drive by referencing GND1 to the switch node and VCC1 to the high-side rail, while GND2 and VCC2 connect to system ground and 12V respectively. No external bootstrap capacitors, level shifters, or isolated supplies are needed, simplifying layout and improving reliability in half-bridge and synchronous rectifier applications.

What thermal derating applies to the LTC1693-1CS8#TRPBF in SO-8 package at elevated ambient temperatures?

The LTC1693-1CS8#TRPBF has θJA = 135°C/W in SO-8. At TA = 70°C, maximum allowed power dissipation drops to ~593mW (calculated as (150°C − 70°C)/135°C/W). This corresponds to ~49mA average output current per channel at 12V. For continuous high-current operation above 60°C ambient, PCB copper area, airflow, or thermal vias must be added to reduce effective θJA per the thermal derating curves in the datasheet.