Analog Devices Inc. LTC1693-2IS8#PBF

Overview

LTC1693-2IS8#PBF from Analog Devices (formerly Linear Technology) is a dual high-speed N-channel MOSFET driver in an 8-lead SO package, featuring one noninverting and one inverting output channel with 1 GΩ electrical isolation between grounds. It delivers 1.5 A peak output current, achieves 16 ns rise/fall times at V_CC = 12 V into 1 nF, operates across 4.5 V to 13.2 V supply range, and includes undervoltage lockout and thermal shutdown - used in isolated high/low-side gate drive for synchronous forward converters and telecom power supplies.

For engineers reviewing the LTC1693-2IS8#PBF datasheet, LTC1693-2IS8#PBF pinout, LTC1693-2IS8#PBF application, or LTC1693-2IS8#PBF equivalent, key selection criteria include dual-output polarity configuration (IN1→OUT1 noninverting, IN2→OUT2 inverting), GND1/GND2 isolation capability, rail-to-rail CMOS-compatible inputs with V_CC-independent thresholds and 1.2 V hysteresis, and robust 150°C junction temperature rating.

Technical Context

The LTC1693-2IS8#PBF integrates two electrically isolated drivers sharing a single SO-8 package: top-side driver (IN1 → OUT1) is noninverting, bottom-side driver (IN2 → OUT2) is inverting, enabling complementary gate control without external logic inversion. Each channel features independent V_CC pins (VCC1/VCC2) and ground pins (GND1/GND2), supporting floating high-side operation with up to ±100 V GND1–GND2 differential voltage.

Its input stage uses a 4 V internal regulator to maintain V_CC-independent VIH (2.6 V typ) and VIL (1.4 V typ) thresholds with 1.2 V hysteresis, while the output stage employs adaptive predriver logic with 6 ns nonoverlapping dead time to minimize cross-conduction. Output saturation voltages are specified at VOL = 75 mV (I_OUT = 10 mA) and VOH = 11.97 V (I_OUT = –10 mA) under V_CC = 12 V.

Key Specifications

Pinout & Package

Package: 8-lead plastic SO (narrow, 0.150-inch width), JEDEC MS-012AC, θ_JA = 135°C/W, TJ_MAX = 150°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated MOSFET driver applications.

Compared with IXDN604PI and ADP3418JRZ-REEL7, the LTC1693-2IS8#PBF uniquely combines dual-channel operation, built-in GND isolation, and mixed polarity outputs in one SO-8 package - eliminating external isolation components and simplifying PCB layout for isolated DC/DC and telecom power designs.

Availability

LTC1693-2IS8#PBF is available at Aetrix Electronics and suitable for industrial power supplies, telecom rectifiers, and motor control systems requiring stable component supply, long-term lifecycle support, and guaranteed I-grade temperature performance.

Supply support for LTC1693-2IS8#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains its precision analog and power IC portfolio with rigorous qualification and long-term product support.

The LTC1693 family was designed specifically for high-efficiency, isolated gate drive in telecom and industrial DC/DC converters - emphasizing low quiescent current, V_CC-independent logic compatibility, and robust isolation for high-reliability power systems.

FAQ

What is the maximum allowable differential voltage between GND1 and GND2 on the LTC1693-2IS8#PBF?

The LTC1693-2IS8#PBF specifies a maximum GND1–GND2 differential voltage of ±100 V per Absolute Maximum Ratings. This rating enables safe operation in isolated topologies such as two-transistor forward converters where the high-side driver ground floats significantly above the low-side reference. Exceeding ±100 V risks permanent damage to internal isolation barriers. The 1 GΩ isolation resistance measured at 75 V confirms robust dielectric integrity within this limit.

Does the LTC1693-2IS8#PBF support 3.3 V logic inputs when powered from 12 V VCC?

Yes, the LTC1693-2IS8#PBF supports 3.3 V logic inputs regardless of V_CC level due to its internally regulated 4 V reference, which fixes VIH at 2.6 V (typ) and VIL at 1.4 V (typ) with 1.2 V hysteresis. This V_CC-independent threshold design allows direct interfacing with 3.3 V microcontrollers or FPGA I/O without level shifters - confirmed in Applications Information section and Electrical Characteristics table.

How does the thermal shutdown feature behave on the LTC1693-2IS8#PBF?

The LTC1693-2IS8#PBF activates thermal shutdown when junction temperature exceeds 145°C, disabling both input buffers and pulling OUT1 and OUT2 low. The circuit includes 20°C hysteresis, so outputs remain disabled until TJ drops below 125°C. This behavior is documented in Applications Information and protects against latch-up or bond-wire failure during sustained overloads - distinct from UVLO, which responds only to supply voltage.

Can the LTC1693-2IS8#PBF drive both channels simultaneously at full 1.5 A peak current?

Yes, the LTC1693-2IS8#PBF is rated for 1.5 A peak output current per channel simultaneously, as verified by test circuits and Typical Performance Characteristics showing t_RISE/t_FALL < 35 ns with C_LOAD = 4.7 nF and f_IN = 100 kHz. However, simultaneous peak loading increases total supply current (ICC(SW) = 20 mA max) and thermal dissipation - proper PCB copper area and thermal vias are required to maintain TJ ≤ 150°C under continuous 1.5 A pulsed loads.

What is the purpose of the 1.2 V input hysteresis on the LTC1693-2IS8#PBF?

The 1.2 V input hysteresis on the LTC1693-2IS8#PBF prevents false triggering caused by ground bounce or EMI-induced noise on IN1 and IN2 pins during high-dv/dt switching events. With VIH = 2.6 V and VIL = 1.4 V, the wide window ensures stable logic recognition even when transient noise exceeds ±500 mV - a critical reliability feature validated in noise immunity testing and explicitly called out in the Features and Applications Information sections.