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Analog Devices Inc. LTC1981ES5#TRMPBF

Part No.:
LTC1981ES5#TRMPBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
SOT-23-5 Thin, TSOT-23-5
Datasheet:
AetrixLTC1981ES5#TRMPBF.pdf
Description:
IC GATE DRVR HIGH-SIDE TSOT23-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,322

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Product details

Overview

LTC1981ES5#TRMPBF from Analog Devices (formerly Linear Technology) is a single-channel, micropower high-side N-channel MOSFET driver with integrated voltage tripler and gate-drive-ready output. It operates from 1.8V to 5.5V supply, delivers up to 7.5V gate drive clamped output, draws only 20µA quiescent current when active, and supports logic-level FETs in battery-powered load-switching applications such as portable POS terminals and cellular telephone power management.

For engineers reviewing the LTC1981ES5#TRMPBF datasheet, LTC1981ES5#TRMPBF pinout, LTC1981ES5#TRMPBF application, or LTC1981ES5#TRMPBF equivalent, this page provides verified functional context, validated pin roles, confirmed thermal and electrical specs, and real-world design implications for high-side switch control in ultra-low-power systems.

Technical Context

The LTC1981ES5#TRMPBF integrates a regulated charge pump that triples VCC to generate a high-side gate drive voltage capped at 7.5V - enabling full enhancement of logic-level N-channel MOSFETs without external components. Its internal regulation maintains low 20µA operating current while ensuring gate voltage stability across input voltages from 1.8V to 5.5V.

Shutdown is controlled via an active-low SHDN pin that forces GATE to ground and reduces supply current to under 1µA. The open-drain GDR (Gate Drive Ready) output asserts when GATE reaches >90% of final value, supporting safe system initialization and fault detection in sequenced power-up architectures.

Key Specifications

ParameterValue and Actual Design Meaning
VCC Range1.8V to 5.5V - supports single-cell Li-ion, NiMH, and 3.3V/5V logic rails without level shifting.
Quiescent Current20µA - enables multi-year battery life in always-on load-switch applications.
GATE Output Clamp7.5V max - protects gate oxide of logic-level MOSFETs (e.g., Si3442DV) from overvoltage stress.
Turn-on Time85µs into 1000pF - ensures predictable, slew-controlled power-up of capacitive loads up to 100µF.
SHDN ThresholdVIH = 1.6V, VIL = 0.4V - compatible with 1.8V, 3.3V, and 5V CMOS/TTL logic without interface circuitry.
GDR Trip PointVCC = 3.3V → 6.17–6.82V - provides precise, temperature-stable gate readiness signal for firmware synchronization.
Operating Temp–40°C to +85°C - qualified for industrial and portable consumer environments.

Pinout & Package

Package: 5-lead plastic SOT-23 (SC-74A), 2.80–3.00 mm × 1.50–1.75 mm × 1.10 mm height, θJA = 250°C/W.

Pin/TerminalCircuit RoleDesign Meaning
GDR (Pin 1)Open-drain status outputAsserts low when GATE voltage exceeds 90% of final value; requires external pull-up for logic-level signaling.
GND (Pin 2)Power and signal referenceMust be connected directly to system ground plane; serves as return path for charge pump and GDR sink current.
SHDN (Pin 3)Active-low enable controlPulling low disables charge pump and forces GATE to ground; high-Z input draws <1µA leakage.
GATE (Pin 4)High-side gate drive outputDelivers regulated ~2.5×VCC (≤7.5V) to N-channel MOSFET source-follower configuration; includes internal 15k series resistor.
VCC (Pin 5)Input supply railAccepts 1.8V–5.5V; powers internal regulator, oscillator, and charge pump; bypass with ≥1µF ceramic capacitor recommended.

Key Features

FeatureDesign Value
No external components requiredIntegrated voltage tripler and regulation eliminate need for flying capacitors, diodes, or external regulators in high-side gate drive circuits.
Ultralow 20µA ON currentReduces standby power in always-on load switches - critical for battery runtime in handheld medical and IoT devices.
7.5V gate clamp protectionPrevents gate-source breakdown in logic-level MOSFETs during VCC transients or temperature drift, improving long-term reliability.
Gate Drive Ready (GDR) outputEnables deterministic firmware timing for downstream power sequencing - avoids race conditions when enabling dependent subsystems.
1.8V–5.5V wide VCC rangeSupports direct integration across legacy 5V, modern 3.3V, and emerging 1.8V microcontroller I/O domains without level translators.

Applications

Portable POS Terminal Power SwitchingCellular Phone Battery Protection

Use Scenario: Controlling power to USB host ports, barcode scanners, or thermal printers in handheld retail terminals powered by single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: High-side load switch controller managing inrush-limited power delivery with precise gate voltage regulation and ready signaling for host MCU coordination.

Use Value: Eliminates discrete charge pump and level-shifter components; 20µA quiescent current extends battery life beyond 6 months in sleep mode.

Use Scenario: Enabling/disabling backup power paths during battery insertion/removal or reverse-polarity events in smartphone charging circuits.

IC Role / Device Role / Timing Role: Reverse-battery protected high-side switch driver with fast turn-off (<12µs) and GDR-synchronized fault reporting to baseband processor.

Use Value: Internal 7.5V gate clamp prevents MOSFET gate damage during 3.6V–4.2V battery transitions; 150Ω series resistor on VCC enables –3.6V reverse tolerance.

Handheld Medical Device Load ManagementIndustrial Sensor Node Power Gating

Use Scenario: Isolating power to Bluetooth LE radios, OLED displays, or analog front-ends in portable ECG monitors or glucose meters between measurements.

IC Role / Device Role / Timing Role: Micropower gate driver providing sequenced, glitch-free power-up via GDR handshake to ensure ADC reference stability before sampling.

Use Value: 85µs turn-on time into 1nF gate capacitance ensures <100ns timing jitter on power-enable edge - critical for low-noise analog acquisition.

Use Scenario: Power-gating LoRaWAN transceivers and environmental sensors in battery-operated smart agriculture nodes deployed outdoors.

IC Role / Device Role / Timing Role: Low-leakage high-side switch controller with <1µA shutdown current and –40°C to +85°C operation for unattended field deployment.

Use Value: Enables >10-year battery life using CR123A cells; internal VCC regulation maintains consistent gate drive across temperature-induced battery voltage sag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side MOSFET driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPS22922DCKRSingle-channel, 1.8V–5.5V, 500mA rated load switch with integrated FET; no external gate drive or voltage tripler.Replaces discrete MOSFET + driver combos but lacks programmable gate voltage and GDR signal.Select when board space is constrained and integrated FET suffices; avoid when driving external high-VDS logic-level FETs like Si6925DQ.
LTC1153CS5#TRMPBFSingle high-side driver with auto-reset circuit breaker; same SOT-23-5 package; 1.8V–6V VCC; no GDR pin.Provides overcurrent protection and latch-off recovery; higher 45µA quiescent current; no gate voltage regulation.Choose when fault resilience (e.g., short-circuit recovery) outweighs ultra-low IQ; not suitable for precision gate voltage control.

Compared with TPS22922DCKR and LTC1153CS5#TRMPBF, the LTC1981ES5#TRMPBF uniquely combines ultralow 20µA IQ, regulated 7.5V gate drive, and GDR timing feedback - making it optimal for externally driven, logic-level N-FET applications demanding both efficiency and deterministic power sequencing.

Availability

LTC1981ES5#TRMPBF is available at Aetrix Electronics and suitable for portable POS terminals, cellular telephone power management, handheld medical instrumentation, battery protection circuits, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for LTC1981ES5#TRMPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains its precision analog and power management portfolio. Linear's legacy ICs emphasize robustness, low power, and ease of use in demanding embedded systems.

The LTC1981ES5#TRMPBF belongs to Linear's micropower high-side switch controller family, designed specifically for battery-constrained applications requiring self-contained gate drive, minimal external components, and reliable sequencing in portable and industrial equipment.

FAQ

What is the maximum gate drive voltage delivered by the LTC1981ES5#TRMPBF?

The LTC1981ES5#TRMPBF internally regulates its gate drive output to a maximum of 7.5V, regardless of VCC level. When VCC is 3.3V, the typical GATE output is 7.25V; at VCC = 1.8V, it drops to 4.50V. This clamping protects logic-level N-channel MOSFET gate oxides from overvoltage stress while maintaining sufficient VGS to fully enhance devices like the Si3442DV.

Does the LTC1981ES5#TRMPBF require external capacitors for charge pump operation?

No, the LTC1981ES5#TRMPBF does not require external flying capacitors. Its internal voltage tripler uses on-chip capacitors and oscillator circuitry to generate boosted gate drive from a single VCC supply. Only a standard 1µF ceramic bypass capacitor on VCC is recommended for stability - eliminating bill-of-materials cost and layout area associated with discrete charge pumps.

How does the GDR (Gate Drive Ready) pin function in the LTC1981ES5#TRMPBF?

The GDR pin on the LTC1981ES5#TRMPBF is an open-drain output that pulls low when the GATE voltage exceeds 90% of its final regulated value. For example, at VCC = 3.3V, GDR asserts when GATE rises above ~6.5V. This provides firmware with a hardware-synchronized signal to safely enable downstream circuitry - avoiding timing races during power-up sequences in portable electronics.

Can the LTC1981ES5#TRMPBF drive both high-side and low-side N-channel MOSFETs?

The LTC1981ES5#TRMPBF is optimized for high-side N-channel MOSFET switching in source-follower configuration. While its GATE output can technically drive a low-side FET, it lacks dedicated low-side gate drive architecture (e.g., ground-referenced driver, bootstrap diode control). For true low-side switching, a dedicated low-side driver or complementary device like the LTC1982 is recommended.

What is the shutdown current specification for the LTC1981ES5#TRMPBF?

The LTC1981ES5#TRMPBF draws less than 1µA of supply current when the SHDN pin is held low. This ultra-low shutdown current minimizes battery drain in always-connected portable systems - enabling multi-year shelf life in applications such as emergency beacon modules or remote sensor nodes where periodic wake-up is required.

LTC1981ES5#TRMPBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
SOT-23-5 Thin, TSOT-23-5
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
N-Channel MOSFET
Voltage - Supply:
1.8V ~ 5.5V
Logic Voltage - VIL, VIH:
0.6V, 1.4V
Current - Peak Output (Source, Sink):
-
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-23-5

LTC1981ES5#TRMPBF FAQ

1.How can I place an order for LTC1981ES5#TRMPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC1981ES5#TRMPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC1981ES5#TRMPBF reliable?

The price and inventory of LTC1981ES5#TRMPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1981ES5#TRMPBF is usually 5 days.

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LTC1981ES5#TRMPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC1981ES5#TRMPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC1981ES5#TRMPBF?

For technical support, including LTC1981ES5#TRMPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1981ES5#TRMPBF requirements.

6.How does Aetrix verify that LTC1981ES5#TRMPBF is sourced from the original manufacturer or authorized distributors?

All LTC1981ES5#TRMPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1981ES5#TRMPBF meets industry standards.

7.What is the process for return or replacement of LTC1981ES5#TRMPBF?

All LTC1981ES5#TRMPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1981ES5#TRMPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC1981ES5#TRMPBF part is unused and in its original packaging.

Return procedure for LTC1981ES5#TRMPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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