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Analog Devices Inc. LTC1982ES6#TRPBF
- Part No.:
- LTC1982ES6#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- SOT-23-6
- Datasheet:
-
LTC1982ES6#TRPBF.pdf
- Description:
- IC GATE DRVR HIGH-SIDE SOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:1,934
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Product details
Overview
LTC1982ES6#TRPBF from Analog Devices (formerly Linear Technology) is a dual-channel, micropower high-side N-channel MOSFET driver in 6-pin SOT-23 package. It integrates internal voltage triplers to generate up to 7.5V gate drive from 1.8V–5.5V supply, delivers ≤10µA per channel quiescent current, and supports independent shutdown control of each channel for battery-powered load switching applications.
For engineers reviewing the LTC1982ES6#TRPBF datasheet, LTC1982ES6#TRPBF pinout, LTC1982ES6#TRPBF application, or LTC1982ES6#TRPBF equivalent, key selection criteria include dual independent high-side gate drive capability, ultralow shutdown current (<1µA), internal 7.5V gate clamp, 110µs turn-on time into 1000pF, and SOT-23 footprint compatibility with logic-level MOSFETs in portable power management systems.
Technical Context
The LTC1982ES6#TRPBF implements two independent regulated charge pump circuits-each generating ~2.5× VCC (capped at 7.5V) to fully enhance external N-channel MOSFETs in high-side configuration. Its shutdown inputs (SHDN1/SHDN2) directly control individual charge pumps, forcing respective GATE outputs to ground when low.
Each channel features internal 30kΩ series resistance on the GATE output, enabling RC-controlled slew rate limiting for inrush current suppression during capacitive load startup. The device operates across –40°C to 85°C and maintains regulated gate voltage over full VCC range (1.8V–5.5V) and temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 1.8V to 5.5V - supports single-cell Li-ion, NiMH, and 3.3V/5V logic rails without level shifting |
| Quiescent Current | 10µA per active channel - enables multi-week battery life in always-on load switch applications |
| Shutdown Current | <1µA - ensures negligible drain during system sleep or standby modes |
| GATE Output Voltage | Clamped at 7.5V max - protects logic-level MOSFET gate oxide while ensuring full enhancement |
| Turn-on Time | 110µs into 1000pF - balances fast switching with controlled inrush for stable power-up sequencing |
| Charge Pump Osc. Freq | 600kHz - provides sufficient regulation bandwidth without EMI concerns in portable designs |
| Operating Temp | –40°C to +85°C - qualified for industrial and extended commercial environments |
Pinout & Package
Package: 6-lead plastic SOT-23 (SC-74A), 2.80–3.00 mm × 1.90 mm × 1.10 mm, lead pitch 0.95 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: SHDN1 | Active-low enable for Channel 1 | Drives GATE1 low when pulled low; disables Channel 1 charge pump and reduces ICC to <1µA |
| 2: GND | Power and signal reference | Common return path for VCC, gate drive outputs, and shutdown logic; requires low-impedance PCB connection |
| 3: SHDN2 | Active-low enable for Channel 2 | Independent control of Channel 2; allows asymmetric load switching or fault isolation |
| 4: GATE2 | High-side gate drive output 2 | Delivers regulated ~2.5×VCC (≤7.5V) to external N-MOSFET source; includes 30kΩ series resistor |
| 5: GATE1 | High-side gate drive output 1 | Identical function to GATE2; enables dual independent high-side switches in compact layout |
| 6: VCC | Supply input | Accepts 1.8V–5.5V; powers both charge pumps and internal regulation circuitry |
Key Features
| Feature | Design Value |
|---|---|
| No external components required | Integrated voltage tripler and regulation eliminate need for external capacitors, diodes, or regulators |
| Dual independent high-side control | Separate SHDN1/SHDN2 pins allow asynchronous switching, staggered power-up, or channel redundancy |
| 7.5V gate voltage clamp | Prevents MOSFET gate-source overvoltage while maintaining sufficient VGS for RDS(on) optimization |
| Internal 30kΩ gate series resistance | Enables simple RC slew-rate control to limit inrush current into large capacitive loads (e.g., 100µF) |
| Ultralow shutdown current | <1µA total device current in shutdown - critical for long-term battery backup and energy harvesting systems |
Applications
| Portable POS Terminal Power Management | Cellular Phone Peripheral Switching |
|---|---|
Use Scenario: Controlling power to barcode scanner, thermal printer, and magnetic stripe reader modules in handheld POS terminals. IC Role / Device Role / Timing Role: Dual high-side load switch controller managing independent 3.3V/5V peripheral rails with sequenced enable timing. Use Value: Enables zero-current standby between transactions and eliminates need for discrete charge pump ICs or external MOSFET drivers. | Use Scenario: Isolating USB interface, SIM card, and camera modules from main battery during deep sleep mode in cellular handsets. IC Role / Device Role / Timing Role: Dual-channel high-side switch providing independent, low-leakage power gating with <1µA shutdown current. Use Value: Extends standby battery life by >30% compared to discrete P-MOSFET solutions due to lower quiescent and shutdown currents. |
| Handheld Medical Instrument Load Control | Reverse Battery Protected Sensor Node |
Use Scenario: Powering precision analog front-end (AFE), display backlight, and Bluetooth radio in portable glucose meters or pulse oximeters. IC Role / Device Role / Timing Role: Dual high-side gate driver enabling clean power sequencing and fault-isolated shutdown of sensitive subsystems. Use Value: Internal 7.5V gate clamp ensures reliable MOSFET turn-on across full battery discharge curve (1.8V–4.2V). | Use Scenario: Protecting microcontroller and sensor supply rails in battery-powered IoT nodes exposed to accidental reverse polarity insertion. IC Role / Device Role / Timing Role: High-side switch with integrated gate drive used in conjunction with external 150Ω series resistor for reverse-battery current limiting. Use Value: Limits reverse current to <24mA under –3.6V condition while maintaining normal operation with <10mV drop at 10mA load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-side MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS22965DRLR | Dual-channel, 5.5V max, 0.5A rated load switch with integrated FETs; no external MOSFET support; fixed 5.5V VCC limit | Monolithic solution for low-current (<500mA) loads; lacks external MOSFET flexibility and wide 1.8V–5.5V input range | Select when board space is critical and load current ≤500mA; avoid when driving high-RDS(on) logic-level MOSFETs or requiring sub-2V operation. |
| MAX16050ETA+ | Dual high-side switch controller with adjustable current limit, thermal shutdown, and I²C interface; requires external MOSFETs and external charge pump capacitors | Supports programmable protection and telemetry; higher BOM count and larger footprint than LTC1982ES6#TRPBF | Select when overcurrent protection, diagnostics, or system-level monitoring are required; avoid for ultra-low-power or minimal-component-count designs. |
Compared with TPS22965DRLR and MAX16050ETA+, the LTC1982ES6#TRPBF uniquely combines dual independent high-side gate drive, 1.8V–5.5V operation, no external components, and <1µA shutdown current in a 6-pin SOT-23-making it optimal for space-constrained, battery-sensitive applications where external MOSFET selection and gate voltage headroom are design priorities.
Availability
LTC1982ES6#TRPBF is available at Aetrix Electronics and suitable for portable POS terminals, cellular phone peripheral power management, and handheld medical instrumentation requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for LTC1982ES6#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog IC portfolio, including precision power management solutions for demanding industrial and portable applications.
The LTC1982ES6#TRPBF belongs to Linear's micropower high-side switch controller product line, designed specifically for battery-constrained systems requiring efficient, compact, and reliable load switching without external charge pump components.
FAQ
What is the maximum gate drive voltage delivered by the LTC1982ES6#TRPBF?
The LTC1982ES6#TRPBF internally clamps gate drive output voltage to a maximum of 7.5V regardless of VCC level. When VCC is 1.8V, the output reaches ~4.5V; at VCC = 3.3V or 5V, it saturates at 7.25V–7.5V. This ensures safe operation with logic-level N-MOSFETs rated for ±8V VGS while preventing gate oxide stress.
Can the LTC1982ES6#TRPBF drive both high-side and low-side MOSFETs?
The LTC1982ES6#TRPBF is designed exclusively for high-side N-channel MOSFET driving. Its architecture uses internal charge pumps referenced to VCC and GND to generate boosted gate voltage above the source potential. It does not support low-side configurations, which require direct ground-referenced gate drive and lack the need for voltage boosting.
How does the LTC1982ES6#TRPBF achieve ultralow quiescent current?
The LTC1982ES6#TRPBF achieves ≤10µA per active channel via regulated charge pump topology with feedback-based current reduction after gate charging completes. Once GATE1/GATE2 reach target voltage, internal regulation circuitry reduces supply current draw significantly. In full shutdown (both SHDN1 and SHDN2 low), total ICC drops below 1µA through complete charge pump disablement.
Is the LTC1982ES6#TRPBF compatible with 1.8V logic control signals?
Yes-the LTC1982ES6#TRPBF accepts SHDN1/SHDN2 logic inputs down to 1.8V supply. Its VIH threshold is guaranteed ≥1.6V across VCC = 1.8V–5.5V, so a 1.8V CMOS high signal reliably enables the corresponding channel. No level-shifting circuitry is needed when interfacing with 1.8V microcontrollers or baseband processors.
What external components are required for basic operation of the LTC1982ES6#TRPBF?
No external components are required for basic operation of the LTC1982ES6#TRPBF. The internal voltage tripler, regulation, and gate drive circuitry operate autonomously. Only external N-channel MOSFETs and their associated load paths are needed. Optional 0.1µF gate capacitors may be added to control slew rate for inrush current limiting in high-capacitance applications.
LTC1982ES6#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 1.8V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 0.6V, 1.4V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
LTC1982ES6#TRPBF FAQ
1.How can I place an order for LTC1982ES6#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC1982ES6#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC1982ES6#TRPBF reliable?
The price and inventory of LTC1982ES6#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC1982ES6#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC1982ES6#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC1982ES6#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC1982ES6#TRPBF?
LTC1982ES6#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC1982ES6#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC1982ES6#TRPBF?
For technical support, including LTC1982ES6#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC1982ES6#TRPBF requirements.
6.How does Aetrix verify that LTC1982ES6#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC1982ES6#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC1982ES6#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC1982ES6#TRPBF?
All LTC1982ES6#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC1982ES6#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC1982ES6#TRPBF part is unused and in its original packaging.
Return procedure for LTC1982ES6#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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