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Analog Devices Inc. LTC4440EMS8E-5#PBF
- Part No.:
- LTC4440EMS8E-5#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4440EMS8E-5#PBF.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:691
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Product details
Overview
LTC4440EMS8E-5#PBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage high-side N-channel MOSFET gate driver optimized for synchronous full-bridge and phase-modulated converters. It operates with VIN up to 60V (withstands 80V transients), delivers 1.1A peak pull-up current and 1.85Ω pull-down impedance at 6V BOOST–TS, and achieves 10ns rise / 7ns fall times driving 1nF loads - enabling low-loss switching in telecom and server power supplies.
For engineers reviewing the LTC4440EMS8E-5#PBF datasheet, LTC4440EMS8E-5#PBF pinout, LTC4440EMS8E-5#PBF application, or LTC4440EMS8E-5#PBF equivalent, this page provides verified package mapping (8-lead MSOP with exposed GND pad), confirmed TTL/CMOS-compatible input thresholds (VIH = 1.6V, VIL = 1.25V, 350mV hysteresis), validated undervoltage lockout (3.04V falling, 3.2V rising), and real-world timing performance under bootstrapped operation.
Technical Context
The LTC4440EMS8E-5#PBF uses an internal level-shifter to translate ground-referenced INP signals to the floating BOOST–TS domain, supporting gate drive up to 95V above TS. Its output stage combines an NPN bipolar pull-up (Q1) and N-channel MOSFET pull-down (N1), delivering asymmetric drive strength critical for fast turn-off of high-Ciss power FETs.
It integrates supply-independent input logic with hysteresis, undervoltage lockout on VCC, and robust transient tolerance (80V/100ms on TS). The device is explicitly rated for –40°C to 85°C ambient operation and requires soldering of the exposed thermal pad (Pin 9) to PCB ground to maintain θJA = 40°C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VIN Range | Up to 60V continuous; withstands 80V/100ms transients - enables use in 48V telecom and industrial DC bus systems without external clamping. |
| Gate Drive Supply | BOOST–TS = 4V to 15V - supports standard logic-level FETs and allows bootstrap operation from 12V rail. |
| Output Rise/Fall Time | 10ns/7ns into 1nF load at 6V BOOST–TS - minimizes MOSFET transition losses in high-frequency (>500kHz) converters. |
| Input Thresholds | VIH = 1.6V, VIL = 1.25V, 350mV hysteresis - ensures noise-immune TTL/CMOS compatibility independent of VCC variation. |
| UVLO Threshold | VCC rising = 3.2V, falling = 3.04V - disables TG output during brownout to prevent partial FET turn-on and shoot-through risk. |
| Thermal Resistance | θJA = 40°C/W (with exposed pad soldered) - enables >1W dissipation in compact 8-lead MSOP layout for high-current drive. |
| Peak Pull-Up Current | 1.1A - rapidly charges high-Qg MOSFET gates (e.g., Si7852DP) to reduce ton and conduction loss. |
Pinout & Package
Package: 8-lead plastic MSOP (MS8E) with exposed thermal pad (Pin 9 = GND), 1mm profile, RoHS-compliant lead-free finish (#PBF).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC (Pin 1) | Low-side supply input | Powers internal logic and level shifter; requires local 0.1µF ceramic bypass to GND (Pin 2). |
| GND (Pin 2) | Low-side reference ground | Return path for VCC and input circuitry; must be connected to system ground plane. |
| INP (Pin 3) | Digital input signal | TTL/CMOS-compatible control input referenced to Pin 2; high-impedance, ±2µA bias current. |
| TS (Pin 4) | High-side source node | Connects to MOSFET source; floats up to 80V above GND; forms return for BOOST and TG. |
| TG (Pin 5) | High-side gate driver output | Drives MOSFET gate between TS and BOOST; swings within ~0.7V of BOOST rail due to NPN pull-up. |
| BOOST (Pin 6) | Bootstrapped high-side supply | Connected via capacitor to TS; voltage swing = VCC–Vf to VIN+VCC–Vf; powers high-side output stage. |
| NC (Pin 7) | No connect | Internally unconnected; may be tied to BOOST (Pin 6) for mechanical stability. |
| NC (Pin 8) | No connect | Internally unconnected; no electrical function. |
| Exposed Pad (Pin 9) | Thermal & electrical ground | Mandatory GND connection; soldered to PCB ground plane to achieve θJA = 40°C/W and prevent thermal shutdown. |
Key Features
| Feature | Design Value |
|---|---|
| 80V transient tolerance on TS | Enables reliable operation in 48V systems subject to load-dump or inductive kick events without external protection. |
| Supply-independent input thresholds | Eliminates need for level-shifting circuitry when interfacing with 3.3V or 5V controllers across varying VCC conditions. |
| 1.85Ω pull-down resistance | Ensures rapid MOSFET turn-off even with large Cgd, preventing Miller-induced false turn-on during high dV/dt transitions. |
| Undervoltage lockout with hysteresis | Prevents erratic gate drive during power-up/down sequences and maintains safe FET state during brownouts. |
| Exposed thermal pad (MS8E) | Reduces junction-to-ambient thermal resistance by >70% vs. standard MSOP, supporting sustained 1.1A peak drive in dense layouts. |
Applications
| Telecom Power Supplies | Server VRMs |
|---|---|
|
Use Scenario: Driving high-side FETs in isolated full-bridge DC/DC converters for 48V intermediate bus conversion to 12V/35A. IC Role / Device Role / Timing Role: High-side gate driver synchronizing with LTC3722-1 controller; provides nanosecond-accurate edge timing for ZVS operation. Use Value: 10ns rise time minimizes overlap conduction loss in 300–500kHz switching, improving efficiency by ≥0.8% at full load per phase. |
Use Scenario: Controlling Si7852DP power stages in multiphase 12V VRMs for AI accelerators requiring fast transient response. IC Role / Device Role / Timing Role: High-side driver in synchronous buck topology; handles 80V transients from hot-swap events on 48V input rails. Use Value: 1.1A peak current ensures <100ns gate charge time for 120nC Qg FETs, enabling sub-200ns PWM dead-time control. |
| Distributed Power Architectures | Industrial Motor Drives |
|
Use Scenario: Gate driving in half-bridge inverters for point-of-load (POL) modules feeding FPGA or ASIC core voltages. IC Role / Device Role / Timing Role: High-side driver referenced to floating TS node; interfaces directly with 3.3V PWM controllers via level-shifted INP. Use Value: 350mV input hysteresis rejects EMI noise in noisy board environments, eliminating false triggering in 2MHz-class POLs. |
Use Scenario: Driving IGBT gates in 3-phase inverter half-bridges for servo drives operating from 60V DC bus. IC Role / Device Role / Timing Role: High-voltage gate driver providing isolated gate control without optocouplers or pulse transformers. Use Value: 80V TS rating accommodates IGBT collector-emitter flyback spikes, reducing need for snubbers and component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4440ES6-5#PBF | SOT-23-6 package (no exposed pad); higher θJA = 230°C/W; identical electrical specs. | Lower power density; unsuitable for >0.5A continuous drive or >500kHz operation without thermal derating. | Select when board space is constrained and thermal load is light (<300mA avg. output current). |
| LTC4441IMS8E#PBF | 6A peak pull-up current; adjustable 5–8V gate drive; wider VIN range (5–28V); no UVLO on VCC. | Designed for low-VGS GaN FETs; lacks undervoltage lockout, requiring external monitoring for brownout safety. | Select for GaN-based designs needing higher drive strength and programmable VGS, but add external UVLO if VCC stability is uncertain. |
Compared with LTC4440ES6-5#PBF, the LTC4440EMS8E-5#PBF delivers 5.8× lower thermal resistance for sustained high-current drive; versus LTC4441IMS8E#PBF, it provides integrated UVLO and tighter input threshold control at the cost of lower peak current - making it optimal for cost-sensitive, reliability-critical 48V silicon MOSFET systems.
Availability
LTC4440EMS8E-5#PBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and distributed power architectures requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for LTC4440EMS8E-5#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains full product support, datasheet archives, and application engineering for legacy Linear parts including the LTC4440 series.
The LTC4440 family was designed specifically for high-efficiency, high-density isolated DC/DC converters - targeting full-bridge, phase-shifted, and active-clamp topologies where robust high-side drive, transient immunity, and precise timing are critical.
FAQ
What is the maximum allowable voltage on the TS pin of the LTC4440EMS8E-5#PBF?
The LTC4440EMS8E-5#PBF specifies a continuous TS voltage rating of –5V to 70V and a 100ms transient rating of –5V to 80V. This 80V transient capability allows the LTC4440EMS8E-5#PBF to remain functional during load-dump events in 48V automotive or telecom systems without external clamping diodes.
Does the LTC4440EMS8E-5#PBF require an external bootstrap diode?
Yes, the LTC4440EMS8E-5#PBF requires an external bootstrap diode connected between VCC (Pin 1) and BOOST (Pin 6). This diode charges the BOOST–TS capacitor during the low-side switch conduction period, maintaining the high-side supply needed for TG output swing - a requirement explicitly stated in the Pin Functions section of the datasheet.
Can the LTC4440EMS8E-5#PBF drive GaN FETs?
The LTC4440EMS8E-5#PBF can drive enhancement-mode GaN FETs with VGS(th) ≤ 2.5V and Qg ≤ 15nC, given its 1.1A peak current and 10ns rise time. However, its fixed 4–15V gate drive range and lack of negative turn-off voltage mean it is less optimal than purpose-built GaN drivers like the LTC4441IMS8E#PBF for fast-switching, low-Qg devices.
What is the purpose of the exposed pad (Pin 9) on the LTC4440EMS8E-5#PBF MS8E package?
The exposed pad (Pin 9) on the LTC4440EMS8E-5#PBF is electrically connected to GND and serves as the primary thermal path. When soldered to a 2500mm² double-sided 1oz copper ground plane, it reduces θJA from >100°C/W to 40°C/W - essential for dissipating power during 1.1A peak output pulses and maintaining junction temperature below 125°C in continuous operation.
How does the undervoltage lockout (UVLO) function in the LTC4440EMS8E-5#PBF?
The LTC4440EMS8E-5#PBF monitors VCC and disables the TG output (pulling it low to TS) when VCC falls below 3.04V (falling threshold). The 160mV hysteresis ensures clean re-enablement at 3.2V (rising threshold), preventing oscillation during slow power-up. This behavior is confirmed in the Electrical Characteristics table and Applications Information section of the datasheet.
LTC4440EMS8E-5#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4V ~ 15V
- Logic Voltage - VIL, VIH:
- 1.3V, 1.6V
- Current - Peak Output (Source, Sink):
- 2.4A, 2.4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 80 V
- Rise / Fall Time (Typ):
- 10ns, 7ns
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4440EMS8E-5#PBF FAQ
1.How can I place an order for LTC4440EMS8E-5#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4440EMS8E-5#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4440EMS8E-5#PBF reliable?
The price and inventory of LTC4440EMS8E-5#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4440EMS8E-5#PBF is usually 5 days.
3.What payment methods are accepted for LTC4440EMS8E-5#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4440EMS8E-5#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4440EMS8E-5#PBF?
LTC4440EMS8E-5#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4440EMS8E-5#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4440EMS8E-5#PBF?
For technical support, including LTC4440EMS8E-5#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4440EMS8E-5#PBF requirements.
6.How does Aetrix verify that LTC4440EMS8E-5#PBF is sourced from the original manufacturer or authorized distributors?
All LTC4440EMS8E-5#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4440EMS8E-5#PBF meets industry standards.
7.What is the process for return or replacement of LTC4440EMS8E-5#PBF?
All LTC4440EMS8E-5#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4440EMS8E-5#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4440EMS8E-5#PBF part is unused and in its original packaging.
Return procedure for LTC4440EMS8E-5#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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