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Analog Devices Inc. LTC4440EMS8E-5#TRPBF
- Part No.:
- LTC4440EMS8E-5#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4440EMS8E-5#TRPBF.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,185
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Product details
Overview
LTC4440EMS8E-5#TRPBF from Analog Devices (formerly Linear Technology) is a high-speed, high-voltage high-side N-channel MOSFET gate driver optimized for synchronous phase-modulated full-bridge converters. It operates with VCC from 4V to 15V, withstands 80V VIN transients, delivers 1.1A peak pull-up current and 1.85Ω pull-down resistance, and drives 1nF loads with 10ns rise/7ns fall times-enabling efficient switching in telecom power systems and server supplies.
For engineers reviewing the LTC4440EMS8E-5#TRPBF datasheet, LTC4440EMS8E-5#TRPBF pinout, LTC4440EMS8E-5#TRPBF application, or LTC4440EMS8E-5#TRPBF equivalent, key selection criteria include bootstrapped high-side drive capability up to 95V above ground, supply-independent TTL/CMOS input thresholds with 350mV hysteresis, undervoltage lockout activation at 3.04V VCC, and thermal performance enabled by the exposed-pad MSOP package.
Technical Context
The LTC4440EMS8E-5#TRPBF implements a level-shifted input stage with internal voltage regulation to maintain VIH = 1.6V and VIL = 1.25V across VCC variations, and integrates a nonoverlapping predriver controlling an NPN pull-up (Q1) and NMOS pull-down (N1) output stage. Its bootstrap architecture supports TS rail voltages up to 80V continuous, with BOOST–TS swing from VCC – VD to VIN + VCC – VD.
It features a dedicated undervoltage lockout circuit that disables TG output when VCC falls below 3.04V, pulling TG to TS. The device's 40°C/W junction-to-ambient thermal resistance (θJA) assumes soldering of the exposed pad (Pin 9) to PCB ground-a requirement for stable operation under 1.1A peak currents and nanosecond-scale switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 4V to 15V - powers low-side logic and enables gate drive compatibility with standard 5V logic-level FETs |
| Max TS Voltage | 60V continuous, 80V transient - defines maximum high-side source voltage in buck-derived topologies |
| Peak Pull-Up Current | 1.1A - reduces MOSFET turn-on time and conduction losses in high-Ciss power devices |
| Pull-Down Resistance | 1.85Ω - ensures fast gate discharge and prevents shoot-through during high-dv/dt transitions |
| Rise/Fall Time | 10ns/7ns @ 1nF - enables >50MHz effective switching in hard-switched full-bridge applications |
| Input Hysteresis | 350mV - suppresses noise-induced false triggering in electrically noisy power converter environments |
| UVLO Threshold | 3.04V (falling), 3.20V (rising) - prevents erratic gate drive during brown-out conditions |
Pinout & Package
Package: 8-Lead Plastic MSOP (MS8E) with exposed thermal pad (Pin 9 = GND). Requires soldering of exposed pad to PCB ground plane for θJA = 40°C/W; unsoldered pad degrades thermal resistance significantly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC (Pin 1) | Low-side supply input | Powers internal logic and level shifter; requires local 1µF ceramic bypass to GND (Pin 2) |
| GND (Pin 2) | Low-side reference ground | Return path for VCC supply and input buffer; must be low-inductance connection |
| INP (Pin 3) | Logic input signal | TTL/CMOS-compatible with 1.25V/1.6V thresholds; referenced to Pin 2 ground |
| TS (Pin 4) | High-side source node | Reference for TG output; floats up to 80V above GND in high-side configurations |
| TG (Pin 5) | Gate driver output | Swings between TS and BOOST; drives MOSFET gate with 1.1A peak sink/source |
| BOOST (Pin 6) | Bootstrapped high-side supply | Connected via external capacitor to TS; voltage swing up to 95V above TS for 100ms |
| NC (Pin 7) | No connect | Not internally bonded; may be tied to BOOST on PCB for layout convenience |
| GND (Pin 8) | Secondary low-side ground | Additional ground connection; must be tied to Pin 2 and exposed pad |
| Exposed Pad (Pin 9) | Thermal & electrical ground | Mandatory GND connection for thermal management; contributes to θJA = 40°C/W |
Key Features
| Feature | Design Value |
|---|---|
| Supply-independent input thresholds | VIH = 1.6V, VIL = 1.25V with 350mV hysteresis - eliminates need for external level-shifting in mixed-supply systems |
| Bootstrapped high-side drive | Supports TS up to 80V continuous and BOOST–TS up to 95V transient - enables direct drive of high-voltage half-bridge legs |
| Robust output stage | 1.1A peak pull-up + 1.85Ω pull-down - minimizes switching losses in 1000pF+ gate capacitance MOSFETs |
| Integrated undervoltage lockout | Disables TG output below 3.04V VCC - prevents partial turn-on and thermal runaway during supply dips |
| Thermally enhanced MSOP | Exposed pad (Pin 9) reduces θJA to 40°C/W - sustains 1.1A peak currents without derating in compact layouts |
Applications
| Telecom Power Systems | Distributed Power Architectures |
|---|---|
Use Scenario: 48V intermediate bus conversion in 4G/5G base station RF power amplifiers requiring high efficiency and transient immunity. IC Role / Device Role / Timing Role: High-side gate driver for synchronous rectification in isolated full-bridge DC/DC modules operating up to 60V input. Use Value: Withstands 80V line transients while maintaining <10ns rise time, reducing MOSFET switching loss by ≥35% vs. legacy drivers in 300kHz–1MHz designs. | Use Scenario: Point-of-load (POL) conversion in data center server racks where space-constrained 12V/35A outputs demand minimal gate drive footprint. IC Role / Device Role / Timing Role: Top-gate driver in phase-modulated full-bridge topology paired with LTC3722-1 controller. Use Value: Exposed-pad MS8E package achieves 40°C/W thermal resistance, enabling 1.1A peak drive without heatsink in 1U chassis airflow-limited environments. |
| Server Power Supplies | High-Density Power Modules |
Use Scenario: 36V–60V input to 12V/35A isolated full-bridge supply in AI accelerator cards with strict EMI and thermal budgets. IC Role / Device Role / Timing Role: High-side driver for Si7852DP dual N-channel MOSFETs in primary-side switching leg. Use Value: 350mV input hysteresis rejects board-level noise from adjacent GPU VRMs, preventing false gate toggling during high-dv/dt load transients. | Use Scenario: Compact 1/4-brick isolated DC/DC modules targeting 240W output in industrial automation controllers. IC Role / Device Role / Timing Role: Gate driver for high-frequency push-pull or full-bridge topologies using discrete MOSFETs. Use Value: 10ns/7ns rise/fall times enable >500kHz operation with <5% duty cycle loss, increasing power density by 22% over 100ns-class drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4440ES6-5#TRPBF | SOT-23-6 package; no exposed pad; θJA = 230°C/W; same electrical specs | Lower power density; limited to ≤1A continuous drive; unsuitable for >200kHz or high-thermal-load applications | Select only for space-constrained low-power designs where thermal budget allows higher junction temperature |
| LTC4441ES6#TRPBF | 6A peak output current; adjustable 5V–8V gate drive; wider 5V–28V input range; no UVLO | Higher current capability but lacks undervoltage lockout and 80V transient tolerance | Choose when driving very high-Ciss GaN FETs or paralleled MOSFETs; avoid in systems requiring brown-out protection |
Compared with LTC4440ES6-5#TRPBF, the LTC4440EMS8E-5#TRPBF provides 5.75× lower thermal resistance and supports higher ambient temperatures in dense layouts; versus LTC4441ES6#TRPBF, it offers superior transient robustness and integrated UVLO at the cost of lower peak current, making it optimal for telecom/server full-bridge systems prioritizing reliability over raw drive strength.
Availability
LTC4440EMS8E-5#TRPBF is available at Aetrix Electronics and suitable for telecom power systems, distributed power architectures, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and infrastructure deployments.
Supply support for LTC4440EMS8E-5#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog and power management portfolio. Linear Technology was founded in 1981 and specialized in precision analog ICs and innovative power solutions.
The LTC4440 family is part of Linear's high-voltage gate driver product line, designed specifically for isolated DC/DC converter topologies-including full-bridge, push-pull, and active-clamp forward-where robust high-side drive, transient immunity, and precise timing control are critical.
FAQ
What is the absolute maximum voltage rating for the TS pin on the LTC4440EMS8E-5#TRPBF?
The TS pin of the LTC4440EMS8E-5#TRPBF has an absolute maximum continuous voltage rating of 70V and can withstand 80V for up to 100ms. This rating enables use in 48V and 60V input power systems with industry-standard line transients. Exceeding these limits risks permanent damage to the internal level-shifter and output stage. The LTC4440EMS8E-5#TRPBF datasheet specifies these values in the Absolute Maximum Ratings table under "TS Voltage".
Does the LTC4440EMS8E-5#TRPBF require an external bootstrap diode, and if so, what are the key selection criteria?
Yes, the LTC4440EMS8E-5#TRPBF requires an external bootstrap diode connected between VCC (Pin 1) and BOOST (Pin 6). Key selection criteria include low forward voltage (<0.55V at 10mA), fast recovery time (<30ns), and low reverse leakage (<100nA at 25°C) to minimize charge loss during high-duty-cycle operation. Schottky diodes such as the MBR0520L or BAS21 are commonly used. The LTC4440EMS8E-5#TRPBF application circuits confirm this configuration in Figures TA03 and TA05.
How does the undervoltage lockout (UVLO) function in the LTC4440EMS8E-5#TRPBF affect system behavior during startup?
The LTC4440EMS8E-5#TRPBF UVLO monitors VCC and disables the TG output when VCC falls below 3.04V (falling threshold), pulling TG to TS. During startup, this prevents partial turn-on of the driven MOSFET until VCC reaches 3.20V (rising threshold), ensuring clean gate drive initiation. This behavior avoids shoot-through and thermal stress in the power stage. The LTC4440EMS8E-5#TRPBF datasheet specifies hysteresis of 160mV between rising and falling thresholds to prevent oscillation near the trip point.
Can the LTC4440EMS8E-5#TRPBF drive both high-side and low-side N-channel MOSFETs in the same design?
Yes, the LTC4440EMS8E-5#TRPBF can drive low-side N-channel MOSFETs by connecting TS to GND, effectively converting it into a ground-referenced driver. In this configuration, TG swings between GND and BOOST, delivering the same 1.1A peak current and 1.85Ω pull-down resistance. The LTC4440EMS8E-5#TRPBF Applications Information section explicitly confirms low-side operation and analyzes CGD-related shoot-through mitigation in both high-side and low-side configurations.
What is the recommended minimum copper area for the exposed pad of the LTC4440EMS8E-5#TRPBF to achieve the specified 40°C/W thermal resistance?
To achieve the specified θJA = 40°C/W, the exposed pad (Pin 9) of the LTC4440EMS8E-5#TRPBF must be soldered to a minimum 2500mm² double-sided 1oz copper board with thermal vias. The datasheet states that failure to solder the pad results in thermal resistance far exceeding 40°C/W. Recommended layout uses ≥6 thermal vias (0.3mm diameter) under the pad, connected to inner-layer ground planes. This requirement is documented in the "Bypassing and Grounding" section of the LTC4440EMS8E-5#TRPBF datasheet.
LTC4440EMS8E-5#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4V ~ 15V
- Logic Voltage - VIL, VIH:
- 1.3V, 1.6V
- Current - Peak Output (Source, Sink):
- 2.4A, 2.4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 80 V
- Rise / Fall Time (Typ):
- 10ns, 7ns
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4440EMS8E-5#TRPBF FAQ
1.How can I place an order for LTC4440EMS8E-5#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4440EMS8E-5#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4440EMS8E-5#TRPBF reliable?
The price and inventory of LTC4440EMS8E-5#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4440EMS8E-5#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4440EMS8E-5#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4440EMS8E-5#TRPBF transactions.
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LTC4440EMS8E-5#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4440EMS8E-5#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4440EMS8E-5#TRPBF?
For technical support, including LTC4440EMS8E-5#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4440EMS8E-5#TRPBF requirements.
6.How does Aetrix verify that LTC4440EMS8E-5#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4440EMS8E-5#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4440EMS8E-5#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4440EMS8E-5#TRPBF?
All LTC4440EMS8E-5#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4440EMS8E-5#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4440EMS8E-5#TRPBF part is unused and in its original packaging.
Return procedure for LTC4440EMS8E-5#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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