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Analog Devices Inc. LTC4440EMS8E#PBF

Part No.:
LTC4440EMS8E#PBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixLTC4440EMS8E#PBF.pdf
Description:
IC GATE DRVR HIGH-SIDE 8MSOP
Quantity:
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Payment
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Inventory:3,437

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Product details

Overview

LTC4440EMS8E#PBF from Analog Devices (formerly Linear Technology) is a high-speed, high-voltage high-side N-channel MOSFET gate driver designed for synchronous full-bridge and phase-modulated converters. It operates with TS voltages up to 80V continuous and withstands 100V transients, delivers 2.4A peak pull-up current and 1.5Ω pull-down impedance, and achieves 10ns rise / 7ns fall times driving 1nF loads - enabling efficient switching in telecom and server power supplies.

For engineers reviewing the LTC4440EMS8E#PBF datasheet, LTC4440EMS8E#PBF pinout, LTC4440EMS8E#PBF application, or LTC4440EMS8E#PBF equivalent, key selection criteria include bootstrapped high-side drive capability, undervoltage lockout thresholds (6.2V VCC / 6.9V BOOST–TS), TTL/CMOS input hysteresis (350mV), thermal performance of the MS8E package with exposed pad, and compatibility with 1000pF gate capacitance loads.

Technical Context

The LTC4440EMS8E#PBF integrates a level-shifted input stage that accepts ground-referenced TTL/CMOS signals and translates them to the floating high-side domain, supporting operation with TS up to 80V. Its output stage uses an NPN bipolar pull-up (2.4A peak) and N-channel MOSFET pull-down (1.5Ω typical) to achieve fast, low-impedance switching transitions.

It features dual independent undervoltage lockout circuits: one monitoring VCC (6.2V falling threshold) and another monitoring the bootstrapped supply (BOOST–TS, 6.9V falling threshold), both disabling the TG output by pulling it to TS when triggered. The MS8E package includes a soldered exposed pad for thermal management (θJA = 40°C/W).

Key Specifications

ParameterValue and Actual Design Meaning
Max TS Voltage80V continuous - supports high-input-voltage DC/DC stages such as 48V or 54V telecom systems.
Abs Max TS Transient100V for 100ms - ensures robustness during line surges without latch-up or damage.
Peak Pull-Up Current2.4A - reduces MOSFET turn-on time and conduction losses in high-Ciss power devices.
Pull-Down Resistance1.5Ω - provides strong gate discharge to prevent shoot-through in bridge topologies.
Rise/Fall Time (1nF)10ns / 7ns - enables >50MHz effective switching frequencies while maintaining efficiency.
VCC UVLO Threshold6.2V (falling) - prevents erratic operation during brownout conditions in 12V auxiliary rails.
Input Hysteresis350mV - suppresses noise-induced false triggering in high-dv/dt environments.

Pinout & Package

The LTC4440EMS8E#PBF is housed in an 8-lead plastic MSOP package (MS8E) with exposed thermal pad (Pin 9, GND), requiring PCB soldering for thermal integrity (θJA = 40°C/W). Pin 1 is VCC; Pin 2 and Pin 4 are GND; Pin 3 is INP; Pin 5 is TG; Pin 6 is BOOST; Pin 8 is TS; Pin 9 (exposed pad) is GND.

Pin/TerminalCircuit RoleDesign Meaning
VCC (Pin 1)Low-side supply inputPowers internal logic and level shifter; requires local 1µF ceramic bypass to GND (Pin 2).
GND (Pins 2, 4)Reference groundProvides return path for VCC and internal circuitry; must be low-inductance connection.
INP (Pin 3)Digital inputTTL/CMOS-compatible signal referenced to GND; 1.25V/1.6V thresholds with 350mV hysteresis.
TS (Pin 8)High-side source referenceConnects to source of driven N-MOSFET; floats up to 80V above system ground.
TG (Pin 5)Gate drive outputSwings between TS and BOOST; drives MOSFET gate with 2.4A peak pull-up and 1.5Ω pull-down.
BOOST (Pin 6)Bootstrapped high-side supplySupplies gate drive voltage referenced to TS; requires external bootstrap capacitor to TS.
Exposed Pad (Pin 9)Thermal & electrical GNDMandatory solder connection to PCB ground plane for thermal dissipation and noise control.

Key Features

FeatureDesign Value
Supply-independent input thresholdsVIH = 1.6V, VIL = 1.25V, hysteresis = 350mV - eliminates need for level-shifting circuitry and improves noise immunity.
High-side bootstrapped driveSupports TS up to 80V with 100V transient tolerance - enables direct integration into high-voltage half-bridge and full-bridge topologies.
Fast, low-impedance output stage10ns/7ns rise/fall into 1nF, 2.4A pull-up, 1.5Ω pull-down - minimizes MOSFET switching losses and improves efficiency at high frequency.
Dual independent UVLOVCC UVLO (6.2V) and BOOST–TS UVLO (6.9V) - ensures safe shutdown if either supply drops, preventing partial drive and shoot-through.
Thermally enhanced MS8E packageExposed pad with θJA = 40°C/W when properly soldered - sustains >1W dissipation in compact 3mm × 3mm footprint.

Applications

Telecom Power RectificationServer VRM High-Side Drive

Use Scenario: Driving high-side N-MOSFETs in isolated full-bridge rectifiers for 48V telecom DC/DC modules.

IC Role / Device Role / Timing Role: High-side gate driver translating ground-referenced PWM to floating gate node; synchronizes with controller's phase-modulated timing.

Use Value: Enables zero-voltage switching (ZVS) via precise 7ns fall time and 1.5Ω pull-down, reducing conduction loss in SiC/Si MOSFETs under 100kHz operation.

Use Scenario: Controlling upper switch in multiphase buck-derived VRMs for CPU/GPU power delivery in 1U servers.

IC Role / Device Role / Timing Role: High-side driver receiving PWM from digital controller (e.g., LTC3722); handles 80V bus transients during hot-swap events.

Use Value: 100V transient tolerance and dual UVLO prevent misfiring during rail collapse, ensuring system-level fault containment per IEC 62368-1.

Distributed Power ArchitectureIndustrial Motor Drive Gate Control

Use Scenario: Driving high-side switches in intermediate bus converters (IBC) feeding point-of-load regulators across backplanes.

IC Role / Device Role / Timing Role: Isolated gate driver interface between low-voltage control logic and 60–72V intermediate bus; operates with bootstrap supply derived from VCC.

Use Value: 2.4A peak pull-up current ensures rapid turn-on of large paralleled MOSFETs (e.g., Si7852DP), minimizing dead-time losses in high-current (>30A) outputs.

Use Scenario: Controlling high-side IGBTs or Si-MOSFETs in three-phase inverter half-bridges for HVAC and pump drives.

IC Role / Device Role / Timing Role: High-side driver synchronized to microcontroller PWM; withstands motor winding flyback transients up to 100V.

Use Value: 350mV input hysteresis and fast propagation delay (<75ns) maintain timing accuracy across temperature (–40°C to 85°C), critical for field-oriented control (FOC) loop stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LTC4442Lower max TS voltage (38V), fixed 6–9.5V VCC range, no 100V transient ratingSuitable only for ≤40V input systems; lacks telecom-grade surge robustnessSelect when cost-sensitive, lower-voltage designs eliminate need for 80V+ operation
LTC4444Includes shoot-through protection, higher 3A pull-up, lower 0.55Ω pull-down, 100V-rated TSTargeted at synchronous rectifier and resonant topologies requiring cross-conduction preventionChoose when shoot-through risk exists due to asymmetric gate delays or layout asymmetry

Compared with LTC4442 and LTC4444, the LTC4440EMS8E#PBF offers balanced performance for standard high-side drive: superior transient tolerance over LTC4442 and simpler architecture than LTC4444, making it optimal for full-bridge controllers like LTC3722 where external timing control eliminates need for integrated shoot-through logic.

Availability

LTC4440EMS8E#PBF is available at Aetrix Electronics and suitable for telecom power systems, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for LTC4440EMS8E#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog and power IC portfolio with rigorous qualification and long-term support.

The LTC4440EMS8E#PBF belongs to Linear's high-voltage gate driver product line, engineered specifically for isolated DC/DC converter topologies requiring robust, fast, and thermally efficient high-side drive in space-constrained telecom and computing applications.

FAQ

What is the maximum continuous TS voltage rating for the LTC4440EMS8E#PBF?

The LTC4440EMS8E#PBF has a maximum continuous TS voltage rating of 80V, as specified in the Absolute Maximum Ratings table. This allows direct use in 48V and 54V intermediate bus applications. Operation beyond this voltage - even briefly - risks permanent damage unless limited to the 100V/100ms transient rating, which is not intended for sustained use.

Does the LTC4440EMS8E#PBF require an external bootstrap diode?

Yes, the LTC4440EMS8E#PBF requires an external bootstrap diode connected between VCC (Pin 1) and BOOST (Pin 6). This diode charges the external bootstrap capacitor (typically 0.1µF ceramic) during the low-side conduction phase, enabling the high-side driver to generate gate voltage relative to the floating TS node. Omitting it prevents proper high-side operation.

What is the purpose of the exposed pad (Pin 9) on the LTC4440EMS8E#PBF MS8E package?

The exposed pad (Pin 9) on the LTC4440EMS8E#PBF is electrically and thermally connected to GND. It must be soldered to a PCB ground plane to achieve the specified θJA of 40°C/W. Failure to do so increases thermal resistance significantly - potentially exceeding 100°C/W - leading to junction overheating and premature failure under load.

Can the LTC4440EMS8E#PBF drive both N-channel MOSFETs and IGBTs?

Yes, the LTC4440EMS8E#PBF can drive both N-channel MOSFETs and IGBTs, provided gate drive requirements align: its 2.4A peak pull-up and 1.5Ω pull-down support typical IGBT gate charge needs (Qg < 100nC) and fast turn-off. However, IGBT-specific features like desaturation detection or active Miller clamp are not included - external circuitry may be needed for full protection.

How does the LTC4440EMS8E#PBF handle undervoltage conditions on both VCC and BOOST–TS supplies?

The LTC4440EMS8E#PBF implements two independent UVLO circuits: VCC UVLO triggers at 6.2V (falling) and BOOST–TS UVLO at 6.9V (falling). If either supply drops below its threshold, the TG output is actively pulled to TS. When both are below threshold, the device enters low-current mode (25µA from VCC, 86µA from BOOST), ensuring fail-safe gate discharge and preventing partial drive.

LTC4440EMS8E#PBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
N-Channel MOSFET
Voltage - Supply:
8V ~ 15V
Logic Voltage - VIL, VIH:
1.3V, 1.6V
Current - Peak Output (Source, Sink):
2.4A, 2.4A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
80 V
Rise / Fall Time (Typ):
10ns, 7ns
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP-EP

LTC4440EMS8E#PBF FAQ

1.How can I place an order for LTC4440EMS8E#PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC4440EMS8E#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC4440EMS8E#PBF reliable?

The price and inventory of LTC4440EMS8E#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4440EMS8E#PBF is usually 5 days.

3.What payment methods are accepted for LTC4440EMS8E#PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4440EMS8E#PBF transactions.

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4.How is shipping managed for LTC4440EMS8E#PBF?

LTC4440EMS8E#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC4440EMS8E#PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC4440EMS8E#PBF?

For technical support, including LTC4440EMS8E#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4440EMS8E#PBF requirements.

6.How does Aetrix verify that LTC4440EMS8E#PBF is sourced from the original manufacturer or authorized distributors?

All LTC4440EMS8E#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4440EMS8E#PBF meets industry standards.

7.What is the process for return or replacement of LTC4440EMS8E#PBF?

All LTC4440EMS8E#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4440EMS8E#PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC4440EMS8E#PBF part is unused and in its original packaging.

Return procedure for LTC4440EMS8E#PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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