Analog Devices Inc. LTC4440ES6-5#TRPBF

Overview

LTC4440ES6-5#TRPBF from Analog Devices (formerly Linear Technology) is a high-speed, high-voltage high-side N-channel MOSFET gate driver optimized for synchronous full-bridge and phase-modulated converters. It operates with VCC from 4V to 15V, withstands 80V VIN transients, delivers 1.1A peak pull-up current and 1.85Ω pull-down impedance, and drives 1nF loads with 10ns rise/7ns fall times-enabling efficient switching in telecom and server power supplies.

For engineers reviewing the LTC4440ES6-5#TRPBF datasheet, LTC4440ES6-5#TRPBF pinout, LTC4440ES6-5#TRPBF application, or LTC4440ES6-5#TRPBF equivalent, this page provides verified technical context, package-specific pin functions, real-world timing performance, UVLO thresholds, and validated alternative options for high-side gate drive in 36–60V input systems.

Technical Context

The LTC4440ES6-5#TRPBF uses a level-shifted TTL/CMOS input stage with 350mV hysteresis and supply-independent thresholds (VIH = 1.6V, VIL = 1.25V), enabling robust noise immunity in high-dV/dt environments. Its output stage combines an NPN pull-up (1.1A peak) and NMOS pull-down (1.85Ω) to achieve fast, low-impedance switching between TS and BOOST rails.

It integrates undervoltage lockout (UVLO rising threshold = 3.2V, falling = 3.04V) that disables TG when VCC drops below specification, preventing partial turn-on of external MOSFETs. The device supports bootstrapped operation up to 95V (100ms), with TS rated continuously to 70V and transiently to 80V-critical for high-reliability isolated DC/DC converters.

Key Specifications

Pinout & Package

Package: 6-Lead Plastic TSOT-23 (S6), 1.0mm max height, JEDEC MO-193 compliant. Thermal resistance θ_JA = 230°C/W. Requires low-inductance PCB layout with ceramic bypass capacitors placed adjacent to VCC–GND and BOOST–TS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Compared with LTC4440EMS8E-5#TRPBF and LTC4441ES6#TRPBF, the LTC4440ES6-5#TRPBF offers optimal balance of speed, transient robustness, and integrated protection in the smallest footprint-making it ideal for space-constrained 48V telecom and server power modules where thermal headroom is managed via airflow.

Availability

LTC4440ES6-5#TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial isolated DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for LTC4440ES6-5#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains full product support, datasheet documentation, and application engineering for legacy Linear parts including the LTC4440 family.

The LTC4440 series was designed specifically for high-reliability, high-voltage high-side gate driving in isolated DC/DC converters-targeting telecom, server, and industrial power systems demanding robust transient tolerance and nanosecond-level timing precision.

FAQ

What is the maximum continuous voltage rating on the TS pin of the LTC4440ES6-5#TRPBF?

The TS pin of the LTC4440ES6-5#TRPBF is rated for continuous operation from –5V to +70V relative to GND. This allows direct connection to the source of high-side N-channel MOSFETs in full-bridge or half-bridge configurations powered from 60V input rails, with 10V margin for ripple and regulation tolerance. Transient rating extends to 80V for 100ms per Absolute Maximum Ratings table.

Does the LTC4440ES6-5#TRPBF require external level shifting for 3.3V logic inputs?

No-the LTC4440ES6-5#TRPBF features supply-independent TTL/CMOS-compatible inputs with VIH = 1.6V (min) and VIL = 1.25V (max) across its full VCC range (4V–15V). A 3.3V logic signal meets these thresholds with margin and does not require external level shifting; the internal level shifter translates INP to the BOOST–TS domain automatically.

How does the undervoltage lockout (UVLO) function in the LTC4440ES6-5#TRPBF?

The LTC4440ES6-5#TRPBF monitors VCC and disables the TG output when VCC falls below 3.04V (UVLO falling threshold), pulling TG to TS. When VCC rises above 3.2V (UVLO rising threshold), normal operation resumes. The 160mV hysteresis prevents oscillation during slow-rising or noisy supply conditions, ensuring clean, glitch-free gate drive enablement.

Can the LTC4440ES6-5#TRPBF drive GaN HEMTs effectively?

The LTC4440ES6-5#TRPBF can drive enhancement-mode GaN HEMTs requiring ≤15V gate drive and ≤1nF total gate charge, thanks to its 10ns/7ns switching times and 1.1A peak current. However, GaN devices often demand faster edges (<5ns) and tighter negative turn-off voltage control-capabilities not provided by the LTC4440ES6-5#TRPBF's architecture. For GaN-optimized drive, consider the LTC4441 or discrete solutions.

What is the recommended BOOST capacitor value for the LTC4440ES6-5#TRPBF in a 500kHz full-bridge application?

For 500kHz operation, a 100nF X7R ceramic capacitor is recommended between BOOST and TS pins of the LTC4440ES6-5#TRPBF. This value balances low impedance at switching frequency with minimal board area and cost. Place it within 2mm of the pins using short, wide traces; pair with a 1N4148 or Schottky bootstrap diode from VCC to BOOST to minimize forward drop and recovery loss.