Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Analog Devices Inc. LTC4440IMS8E#TRPBF

Part No.:
LTC4440IMS8E#TRPBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixLTC4440IMS8E#TRPBF.pdf
Description:
IC GATE DRVR HIGH-SIDE 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

LTC4440IMS8E#TRPBF from Analog Devices (formerly Linear Technology) is a high-speed, high-voltage high-side N-channel MOSFET gate driver designed for synchronous full-bridge and phase-modulated converters. It operates with TS voltage up to 80V continuous (100V transient), delivers 2.4A peak pull-up current and 1.5Ω pull-down resistance, and achieves 10ns rise / 7ns fall times driving 1nF loads - enabling efficient switching in telecom and server power supplies.

For engineers reviewing the LTC4440IMS8E#TRPBF datasheet, LTC4440IMS8E#TRPBF pinout, LTC4440IMS8E#TRPBF application, or LTC4440IMS8E#TRPBF equivalent, key selection criteria include TS voltage rating (80V), bootstrap supply UVLO threshold (6.9V), input hysteresis (350mV), thermal performance of the MS8E package (θJA = 40°C/W), and compatibility with standard-threshold MOSFETs in isolated DC/DC topologies.

Technical Context

The LTC4440IMS8E#TRPBF integrates a level-shifted TTL/CMOS input stage with supply-independent thresholds (VIH = 1.6V, VIL = 1.25V) and 350mV hysteresis, enabling robust noise immunity in high-dV/dt environments. Its output stage combines an NPN bipolar pull-up (2.4A peak) and NMOS pull-down (1.5Ω typical) to drive high-capacitance gates while maintaining fast edge rates.

It features dual undervoltage lockout: VCC UVLO activates at 6.2V (falling), and BOOST–TS UVLO triggers at 6.9V (falling), forcing TG low to TS. The MS8E package includes an exposed ground pad soldered to PCB for thermal management (TJMAX = 125°C, θJA = 40°C/W).

Key Specifications

ParameterValue and Actual Design Meaning
TS Voltage Range–5V to 80V continuous; withstands 100V/100ms transients - supports wide-input telecom supplies (36–72V) with surge margin.
Peak Pull-Up Current2.4A - reduces MOSFET turn-on time and conduction losses in high-frequency (>500kHz) converters.
Pull-Down Resistance1.5Ω - ensures rapid gate discharge to prevent shoot-through in bridge configurations.
Rise/Fall Time10ns/7ns @ CL = 1nF, VBOOST–TS = 12V - enables <100ns total propagation delay (tPLH/tPHL ≤ 75ns) for precise timing control.
Input Hysteresis350mV - eliminates false triggering from switching noise on INP in high-density power layouts.
VCC UVLO Threshold6.2V (falling) - disables driver before control IC brownout, preventing erratic gate behavior during input sag.
Operating Temp Range–40°C to 125°C - qualified for industrial and telecom base station environments with extended thermal cycling.

Pinout & Package

The LTC4440IMS8E#TRPBF uses the 8-lead MSOP package with exposed thermal pad (MS8E), requiring soldering of Pin 9 (exposed pad) to PCB ground for θJA = 40°C/W thermal performance. Package dimensions: 3.00mm × 3.00mm × 1.10mm max height.

Pin/TerminalCircuit RoleDesign Meaning
VCC (Pin 1)Low-side supply inputPowers internal logic and level shifter; requires local 1µF ceramic bypass to GND (Pin 2) for stable operation.
GND (Pin 2)Reference groundCommon return for VCC and input circuitry; must be low-inductance connection to minimize ground bounce.
INP (Pin 3)Digital input signalTTL/CMOS-compatible, supply-independent threshold (1.25V/1.6V); 350mV hysteresis prevents noise-induced toggling.
TS (Pin 4)High-side source referenceConnects to MOSFET source node; defines lower rail for TG output swing (TG = TS to BOOST).
TG (Pin 5)Gate driver outputDrives MOSFET gate between TS and BOOST; capable of 2.4A peak sourcing and 1.5Ω sinking.
BOOST (Pin 6)Bootstrap supply inputConnects to external bootstrap capacitor; swings up to VIN + VCC – VD (diode drop) to sustain high-side drive.
NC (Pin 7)No connectNot internally bonded; may be left floating or tied to BOOST for mechanical stability (per datasheet recommendation).
Exposed Pad (Pin 9)Thermal groundMandatory ground connection; failure to solder degrades θJA to >100°C/W and risks thermal shutdown.

Key Features

FeatureDesign Value
Supply-independent input thresholdsVIH/VIL remain fixed at 1.6V/1.25V across VCC = 8–15V - eliminates need for external level-shifting in multi-rail systems.
100V transient tolerance on TSContinues functional operation during 100V/100ms surges - meets IEC 61000-4-5 Level 4 surge immunity without external clamping.
Low-impedance pull-down (1.5Ω)Ensures sub-10ns gate discharge even with 2nF Miller capacitance - critical for preventing cross-conduction in full-bridge ZVS designs.
Integrated dual UVLOIndependent monitoring of VCC and BOOST–TS supplies forces safe shutdown if either rail collapses - prevents partial drive and MOSFET destruction.
Thermally enhanced MS8E packageExposed pad enables 40°C/W junction-to-ambient thermal resistance when soldered to ≥2500mm² copper - supports 1.5W dissipation at 85°C ambient.

Applications

Telecom Power SupplyServer VRM

Use Scenario: 36–72V input isolated full-bridge converter delivering 12V/35A to telecom line cards.

IC Role / Device Role / Timing Role: High-side gate driver for primary-side N-channel MOSFETs in synchronous rectified topology, synchronized to LTC3722-1 controller.

Use Value: 10ns rise time minimizes switching loss in 300kHz+ operation; 80V TS rating accommodates 72V nominal + 100V surge without derating.

Use Scenario: High-density 12V intermediate bus converter feeding multiphase CPU VRMs in datacenter servers.

IC Role / Device Role / Timing Role: High-side driver for Si7852DP MOSFETs in interleaved full-bridge stage, interfacing with LTC3723-1 controller.

Use Value: 2.4A peak current drives 1.5nF gate charge rapidly, reducing Qg-related losses by >18% vs. 1A drivers at 500kHz.

Distributed Power ArchitectureIndustrial Isolated DC/DC

Use Scenario: 48V input half-bridge converter powering remote I/O modules in factory automation systems.

IC Role / Device Role / Timing Role: High-side driver for Si7370DP MOSFETs, operating with LTC4440ES6 on low-side and LTC3901 for synchronous rectification.

Use Value: 350mV input hysteresis rejects EMI from adjacent motor drives; –40°C to 125°C rating ensures reliability in uncooled enclosures.

Use Scenario: 24–60V input isolated flyback or forward converter supplying 5V/3A to PLC controllers.

IC Role / Device Role / Timing Role: High-side driver for primary-side switch in transformer-isolated topology, referenced to floating TS node.

Use Value: Dual UVLO prevents erratic gate drive during brownout events common in industrial mains; BOOST–TS UVLO (6.9V) guards against bootstrap capacitor discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LTC4444EMS8E#TRPBFIncludes shoot-through protection; higher VCC range (4.5–13.5V); 3A peak pull-up, 0.55Ω pull-down.Required where dead-time control is unavailable or unreliable; suited for cost-sensitive designs needing integrated safety.Select when shoot-through prevention is mandatory and layout space allows for same MS8E footprint.
LTC4442EMS8E#TRPBFLower TS rating (38V); 6V ≤ VCC ≤ 9.5V; no TS transient rating beyond 38V.Restricted to low-input-voltage applications (e.g., 12V/24V systems); unsuitable for telecom or industrial 48V+ rails.Choose only for ≤38V input systems where thermal budget permits higher RDS(on) trade-off.

Compared with LTC4444EMS8E#TRPBF, the LTC4440IMS8E#TRPBF offers superior transient robustness (100V vs. unspecified) and wider temperature range (125°C vs. 85°C), but lacks shoot-through protection. Versus LTC4442EMS8E#TRPBF, it supports 2.1× higher TS voltage and maintains full functionality under 100V surges - essential for infrastructure-grade power.

Availability

LTC4440IMS8E#TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial isolated DC/DC converters requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for LTC4440IMS8E#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog and power management portfolio with rigorous automotive and industrial qualification standards.

The LTC4440IMS8E#TRPBF belongs to Linear's high-voltage gate driver product line, engineered specifically for isolated DC/DC converters in telecom, server, and industrial power systems demanding robust transient immunity and precise timing control.

FAQ

What is the maximum continuous TS voltage rating for the LTC4440IMS8E#TRPBF?

The LTC4440IMS8E#TRPBF has a maximum continuous TS voltage rating of 80V, with capability to withstand 100V transients for up to 100ms without functional interruption. This rating is validated per Absolute Maximum Ratings table in the official datasheet and applies across the full –40°C to 125°C operating temperature range.

Does the LTC4440IMS8E#TRPBF require external level shifting for TTL/CMOS input signals?

No, the LTC4440IMS8E#TRPBF does not require external level shifting. Its input stage features supply-independent TTL/CMOS-compatible thresholds (VIH = 1.6V, VIL = 1.25V) with 350mV hysteresis, ensuring reliable operation across VCC = 8–15V without dependency on supply voltage variations. This is confirmed in the Electrical Characteristics table and Applications Information section.

How does the exposed thermal pad (Pin 9) affect thermal performance of the LTC4440IMS8E#TRPBF?

The exposed thermal pad (Pin 9) of the LTC4440IMS8E#TRPBF must be soldered to PCB ground to achieve the specified θJA = 40°C/W. Without this connection, thermal resistance increases significantly - potentially exceeding 100°C/W - leading to junction temperature violations above 85°C ambient. Datasheet Note 4 explicitly states that unsoldered pads result in "much higher than 40°C/W" thermal resistance.

What are the undervoltage lockout (UVLO) thresholds for VCC and BOOST–TS in the LTC4440IMS8E#TRPBF?

The LTC4440IMS8E#TRPBF has two independent UVLO circuits: VCC UVLO activates at 6.2V (falling) and releases at 6.5V (rising), while BOOST–TS UVLO triggers at 6.9V (falling) and resets at 7.4V (rising). These values are specified in the Electrical Characteristics table and ensure safe gate drive disablement before supply collapse compromises MOSFET control.

Can the LTC4440IMS8E#TRPBF drive both high-side and low-side N-channel MOSFETs in the same design?

The LTC4440IMS8E#TRPBF is designed exclusively as a high-side gate driver and cannot directly drive low-side MOSFETs referenced to ground. Its output (TG) swings between TS and BOOST, requiring TS to be connected to the MOSFET source - which floats in high-side configuration. For low-side drive, a separate ground-referenced driver (e.g., LTC4442) or complementary low-side channel is required.

LTC4440IMS8E#TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
N-Channel MOSFET
Voltage - Supply:
8V ~ 15V
Logic Voltage - VIL, VIH:
1.3V, 1.6V
Current - Peak Output (Source, Sink):
2.4A, 2.4A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
80 V
Rise / Fall Time (Typ):
10ns, 7ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP-EP

LTC4440IMS8E#TRPBF FAQ

1.How can I place an order for LTC4440IMS8E#TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC4440IMS8E#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC4440IMS8E#TRPBF reliable?

The price and inventory of LTC4440IMS8E#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4440IMS8E#TRPBF is usually 5 days.

3.What payment methods are accepted for LTC4440IMS8E#TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4440IMS8E#TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC4440IMS8E#TRPBF?

LTC4440IMS8E#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC4440IMS8E#TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC4440IMS8E#TRPBF?

For technical support, including LTC4440IMS8E#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4440IMS8E#TRPBF requirements.

6.How does Aetrix verify that LTC4440IMS8E#TRPBF is sourced from the original manufacturer or authorized distributors?

All LTC4440IMS8E#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4440IMS8E#TRPBF meets industry standards.

7.What is the process for return or replacement of LTC4440IMS8E#TRPBF?

All LTC4440IMS8E#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4440IMS8E#TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC4440IMS8E#TRPBF part is unused and in its original packaging.

Return procedure for LTC4440IMS8E#TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

LTC4440IMS8E#TRPBF Tags

  • LTC4440IMS8E#TRPBF
  • LTC4440IMS8E#TRPBF PDF
  • LTC4440IMS8E#TRPBF Datasheet
  • LTC4440IMS8E#TRPBF Specifications
  • LTC4440IMS8E#TRPBF Images
  • Analog Devices Inc.
  • Analog Devices Inc. LTC4440IMS8E#TRPBF
  • Buy LTC4440IMS8E#TRPBF
  • LTC4440IMS8E#TRPBF Price
  • LTC4440IMS8E#TRPBF Distributor
  • LTC4440IMS8E#TRPBF Supplier
  • LTC4440IMS8E#TRPBF Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER