Analog Devices Inc. LTC4441EMSE#TRPBF
- Part No.:
- LTC4441EMSE#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4441EMSE#TRPBF.pdf
- Description:
- IC GATE DRVR LOW-SIDE 10MSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
LTC4441EMSE#TRPBF from Analog Devices (formerly Linear Technology) is a high-speed, 6A peak-current N-channel MOSFET gate driver in a thermally enhanced 10-lead MSOP package with exposed pad. It features an adjustable 5V–8V gate drive supply, 30ns propagation delay, logic-level input tolerant to ±15V, and integrated leading-edge blanking for current-sense signal conditioning - deployed in synchronous buck converters and motor drivers.
For engineers reviewing the LTC4441EMSE#TRPBF datasheet, LTC4441EMSE#TRPBF pinout, LTC4441EMSE#TRPBF application, or LTC4441EMSE#TRPBF equivalent, key selection criteria include gate drive voltage programmability, blanking time adjustability via RBLANK, thermal shutdown behavior, and compatibility with high-side N-MOSFET configurations requiring fast turn-on/turn-off control.
Technical Context
The LTC4441EMSE#TRPBF integrates a P-channel LDO regulator (DRVCC) programmable from 5V to 8V via FB pin feedback, enabling optimal gate overdrive for both standard and logic-level N-MOSFETs. Its dual-stage output stage combines an NPN bipolar transistor (Q1) and P-channel MOSFET (P1) for rail-to-rail pull-up and an N-channel MOSFET (N1, RON = 0.35Ω typ.) for low-impedance pull-down.
A dedicated blanking circuit - available only on the 10-lead LTC4441 (not LTC4441-1) - generates an open-drain BLANK signal timed from the OUT leading edge, with blanking duration set by external RBLANK (200ns typ. at 200kΩ). Input thresholds (VIH = 2.4V, VIL = 1.4V) are supply-independent due to internal bias regulation, and EN/SHDN provides three-state control: enable (>1.21V), inhibit (>0.45V < 1.21V), or shutdown (<0.45V, IQ < 12µA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | 6A - sufficient to rapidly charge/discharge high-QG power MOSFETs (e.g., IRFB31N20D) in high-frequency switching applications. |
| Gate Drive Voltage Range | 5V to 8V - programmable via FB pin resistive divider; enables use of logic-level or standard-threshold N-MOSFETs without external regulators. |
| Propagation Delay | 30ns (tPHL) / 36ns (tPLH) - ensures tight timing alignment in high-frequency synchronous rectifiers and multiphase controllers. |
| Input Voltage Range | –15V to +15V - allows direct interfacing with isolated gate drivers or noisy digital logic without level-shifting circuitry. |
| Blanking Time Adjustment | Programmable via RBLANK (200ns typ. at 200kΩ) - suppresses false current-sense triggering caused by PCB layout parasitics during MOSFET turn-on. |
| Shutdown Current | <12µA - enables ultra-low-power standby in battery-backed or energy-sensitive systems without disabling upstream supplies. |
| Thermal Protection | Activates at TJ > 150°C with 20°C hysteresis - forces OUT low and disables DRVCC regulator to prevent latch-up or permanent damage under overload. |
Pinout & Package
Package: 10-lead MSOP (MSE) with exposed thermal pad (Pin 11 = GND), θJA = 38°C/W. Exposed pad must be soldered to PCB ground plane for thermal and electrical integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PGND (1) | Power Ground Reference | Low-inductance return path for DRVCC bypass capacitor and driver output stage; must be tied directly to MOSFET source or sense resistor. |
| BLANK (2) | Open-Drain Blanking Signal Output | Asserts low during programmable blanking interval after OUT rising edge; used to mute current-sense amplifier inputs during ringing. |
| RBLANK (3) | Blanking Time Set Input | Resistor-to-SGND sets blanking duration; 200kΩ yields ~200ns; floating disables blanking function. |
| SGND (4) | Signal Ground Reference | Return for DRVCC regulator, input buffers, and logic circuitry; separate from PGND but tied near IC to minimize noise coupling. |
| IN (5) | Non-Inverting Logic Input | TTL/CMOS-compatible input with supply-independent thresholds (VIH = 2.4V, VIL = 1.4V); withstands ±15V transients. |
| EN/SHDN (6) | Enable/Shutdown Control | Three-state logic: >1.21V = active, 0.45–1.21V = output inhibited, <0.45V = full shutdown (<12µA IQ). |
| FB (7) | DRVCC Regulator Feedback | Connects to center tap of R1/R2 divider (R1 = 330kΩ fixed) to program DRVCC output voltage between 5V and 8V. |
| VIN (8) | Main Supply Input | Accepts 5V–25V input; powers DRVCC regulator; requires local 1µF ceramic bypass to SGND. |
| DRVCC (9) | Regulated Gate Drive Supply | Output of internal LDO; powers driver core and logic; requires 10µF X5R/X7R ceramic bypass to PGND. |
| OUT (10) | High-Current Driver Output | Drives N-MOSFET gate; capable of 6A peak sink/source; low RON (0.35Ω) ensures fast turn-off and prevents shoot-through. |
| GND (11, Exposed Pad) | Thermal & Electrical Ground | Must be soldered to PCB ground plane; primary thermal path and reference for all grounds; not electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Adjustable Gate Drive Voltage | 5V–8V programmable via FB pin - eliminates need for external gate voltage regulators and supports mixed MOSFET families. |
| Programmable Leading-Edge Blanking | 200ns typical blanking time (adjustable with RBLANK) - prevents false overcurrent trips in high-dV/dt synchronous rectifier designs. |
| Supply-Independent Input Thresholds | VIH = 2.4V, VIL = 1.4V with 1V hysteresis - ensures reliable logic-level operation regardless of DRVCC or VIN variations. |
| Ultra-Low Shutdown Current | <12µA - enables seamless integration into always-on subsystems without compromising system-level power budget. |
| Integrated Thermal Shutdown | 150°C activation with 20°C hysteresis - protects device and downstream MOSFETs during sustained overload or poor heatsinking. |
Applications
| DC-DC Synchronous Buck Converter | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency 12V-to-5V point-of-load converter operating at 500kHz with IRFB31N20D MOSFETs. IC Role / Device Role / Timing Role: Drives high-side N-MOSFET gate with 6A peak current and 30ns propagation delay to minimize dead-time loss and improve efficiency. Use Value: Adjustable DRVCC (6.5V) optimizes RDS(on) conduction loss while blanking (200ns) rejects gate-drive-induced current-sense ringing. |
Use Scenario: 24V brushed DC motor controller using dual N-MOSFET half-bridge with current sensing at source node. IC Role / Device Role / Timing Role: Provides matched high- and low-side gate drive with independent blanking to avoid false fault detection during PWM transitions. Use Value: ±15V input tolerance allows direct connection to microcontroller GPIO; thermal shutdown prevents MOSFET destruction during stall conditions. |
| Isolated Gate Driver Companion | High-Voltage Charge Pump Controller |
|
Use Scenario: Auxiliary gate driver stage receiving isolated logic signals from Si823x isolators in a 400V solar inverter half-bridge. IC Role / Device Role / Timing Role: Buffers isolated logic edges into high-current gate drive; uses EN/SHDN for system-level fault coordination. Use Value: 36ns tPLH preserves timing fidelity across isolation barrier; shutdown mode reduces standby power when isolator reports fault. |
Use Scenario: Cascaded charge pump generating 12V gate drive for high-side N-MOSFET in 100V flyback controller. IC Role / Device Role / Timing Role: Drives charge pump switching FET with precise timing and blanking to reject diode reverse-recovery noise. Use Value: 5V–8V DRVCC range matches charge pump output stability; low RON (0.35Ω) minimizes switching loss in high-duty-cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5113SDX/NOPB | Fixed 12V gate drive; no DRVCC regulation or blanking; 5A peak output; SO-8 package. | Lacks programmable gate voltage and blanking - unsuitable where MOSFET VGS(th) varies or current-sense ringing is severe. | Select when gate voltage is fixed and cost/space constraints favor SO-8; verify thermal performance without exposed pad. |
| UCC27531DBVR | Fixed 5V/12V dual-output; no blanking; 5A sink/source; 13ns propagation delay; SOT-23-6. | Higher speed but no blanking or gate voltage adjustment - better for low-voltage logic-level MOSFETs in compact layouts. | Prefer for space-constrained, low-VIN designs where blanking is handled externally; confirm thermal limits at 6A peak. |
Compared with LM5113SDX/NOPB and UCC27531DBVR, the LTC4441EMSE#TRPBF uniquely combines gate voltage programmability, blanking adjustability, and 6A drive in a thermally optimized MSOP package - making it the only choice for high-reliability, high-noise industrial buck and motor control where gate drive optimization and fault immunity are critical.
Availability
LTC4441EMSE#TRPBF is available at Aetrix Electronics and suitable for synchronous buck converters, industrial motor drives, and high-voltage charge pump controllers requiring stable component supply, extended temperature operation (–40°C to 125°C), and long-term industrial lifecycle support.
Supply support for LTC4441EMSE#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its precision analog and power management product lines with full technical documentation, SPICE models, and application engineering support.
The LTC4441EMSE#TRPBF belongs to Linear's high-performance gate driver family, designed specifically for demanding DC-DC conversion and motor control applications where gate drive accuracy, thermal robustness, and noise immunity are essential.
FAQ
What is the maximum allowable supply voltage for the LTC4441EMSE#TRPBF?
The LTC4441EMSE#TRPBF has an absolute maximum VIN rating of 28V and DRVCC rating of 9V. Operation above 25V on VIN is not recommended for continuous use due to increased DRVCC regulator dropout loss and thermal stress. The device is specified for normal operation from 5V to 25V VIN, with guaranteed performance across –40°C to 125°C junction temperature.
Does the LTC4441EMSE#TRPBF support both high-side and low-side N-MOSFET configurations?
Yes, the LTC4441EMSE#TRPBF supports both configurations. Its logic-input tolerance (–15V to +15V), supply-independent thresholds, and ability to drive gate voltages up to 8V make it suitable for high-side N-MOSFETs in bootstrapped or isolated topologies, as well as low-side switches. The BLANK and RBLANK pins are especially valuable in high-side current-sense arrangements.
How is the blanking time adjusted on the LTC4441EMSE#TRPBF?
The blanking time on the LTC4441EMSE#TRPBF is set by connecting a resistor (RBLANK) from Pin 3 (RBLANK) to SGND. A 200kΩ resistor yields ~200ns blanking time; lower resistance values reduce blanking duration. The BLANK pin (Pin 2) is an open-drain output that goes low during blanking and releases high-impedance afterward - intended for direct connection to current-sense amplifier enable inputs.
Can the LTC4441EMSE#TRPBF operate without the DRVCC regulator enabled?
Yes. The LTC4441EMSE#TRPBF's DRVCC regulator can be disabled by connecting the FB pin directly to VIN, effectively bypassing the internal LDO. In this configuration, the DRVCC pin becomes a pass-through node, and external 5V–8V gate drive supply must be provided. This mode is useful when VIN is close to desired gate voltage and regulator inefficiency must be avoided.
What is the thermal resistance (θJA) of the LTC4441EMSE#TRPBF package, and how critical is the exposed pad soldering?
The LTC4441EMSE#TRPBF in the 10-lead MSOP package has θJA = 38°C/W - but this value assumes the exposed pad (Pin 11) is fully soldered to a large PCB ground plane. Failure to solder the pad increases θJA significantly and risks thermal runaway under 6A peak load. Analog Devices explicitly states that unsoldered exposed pads result in "a thermal resistance much higher than 38°C/W."
LTC4441EMSE#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 5V ~ 25V
- Logic Voltage - VIL, VIH:
- 1.8V, 2V
- Current - Peak Output (Source, Sink):
- 6A, 6A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 13ns, 8ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-MSOP-EP
LTC4441EMSE#TRPBF FAQ
1.How can I place an order for LTC4441EMSE#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4441EMSE#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of LTC4441EMSE#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4441EMSE#TRPBF is usually 5 days.
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5.How can I obtain technical support or documentation for LTC4441EMSE#TRPBF?
For technical support, including LTC4441EMSE#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4441EMSE#TRPBF requirements.
6.How does Aetrix verify that LTC4441EMSE#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4441EMSE#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4441EMSE#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4441EMSE#TRPBF?
All LTC4441EMSE#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4441EMSE#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4441EMSE#TRPBF part is unused and in its original packaging.
Return procedure for LTC4441EMSE#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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