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Analog Devices Inc. LTC4441ES8-1#PBF

Part No.:
LTC4441ES8-1#PBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixLTC4441ES8-1#PBF.pdf
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:194

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Product details

Overview

LTC4441ES8-1#PBF from Analog Devices (formerly Linear Technology) is an 8-pin SOIC N-channel MOSFET gate driver optimized for high-speed, high-current switching in DC/DC converters and motor control. It delivers up to 6A peak output current, operates from 5V to 25V VIN, features logic-level input thresholds (VIH = 2.4V, VIL = 1.4V), and provides 30ns propagation delay with <12µA shutdown current.

For engineers reviewing the LTC4441ES8-1#PBF datasheet, LTC4441ES8-1#PBF pinout, LTC4441ES8-1#PBF application, or LTC4441ES8-1#PBF equivalent, key selection criteria include gate drive voltage programmability (5–8V), undervoltage lockout on FB pin, thermal shutdown at 150°C, and compatibility with standard and logic-level N-channel MOSFETs in high-frequency power stages.

Technical Context

The LTC4441ES8-1#PBF integrates a P-channel LDO regulator (DRVCC) programmable via FB pin with 1.21V reference, enabling precise gate voltage control independent of VIN. Its input stage uses supply-independent CMOS/TTL thresholds with 1V hysteresis to reject noise in noisy switching environments.

The output stage employs a hybrid NPN/P-MOS pull-up and N-MOS pull-down (RONL = 0.35Ω typ) to achieve fast rise/fall times (13ns/8ns) and minimize cross-conduction with 5ns non-overlap timing. Unlike the 10-lead LTC4441, the LTC4441ES8-1#PBF omits BLANK and RBLANK pins and lacks adjustable leading-edge blanking functionality.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Output Current6A - sufficient to fully enhance high-QG N-channel MOSFETs (e.g., IRFB31N20D) within nanosecond-scale transition windows.
Supply Voltage Range (VIN)5V to 25V - supports wide-input industrial and automotive DC/DC supplies without external regulators.
DRVCC Programmable Range5V to 8V - enables optimal gate overdrive for both standard-threshold (≥4V) and logic-level (≤2.5V) MOSFETs.
Propagation Delay30ns (tPHL) - ensures tight timing alignment with high-frequency controllers (e.g., >1MHz switching).
Shutdown Current<12µA - minimizes standby power in battery-backed or energy-sensitive systems during disable mode.
Input Threshold Hysteresis1V (VIH–VIL) - prevents false triggering from ringing or EMI on IN signal in high-dV/dt environments.
Thermal Shutdown Threshold150°C with 20°C hysteresis - protects against sustained overload while allowing brief transient peaks during normal operation.

Pinout & Package

Package: 8-Lead Plastic SO (Narrow, 0.150-inch width), RoHS-compliant, operating junction temperature range –40°C to +125°C.

Pin/TerminalCircuit RoleDesign Meaning
OUT (Pin 8)Driver OutputHigh-current gate drive node; connects directly to MOSFET gate; capable of sourcing/sinking 6A peak.
DRVCC (Pin 7)Regulated Gate Supply OutputProgrammable 5–8V LDO output powering internal logic and output stage; requires ≥10µF X5R/X7R ceramic bypass to PGND.
VIN (Pin 6)Main Supply InputPrimary power input (5–25V); powers DRVCC regulator; must be bypassed with ≥1µF low-ESR capacitor to SGND.
FB (Pin 5)DRVCC Feedback InputConnects to center tap of resistive divider (R1=330kΩ, R2 variable) to set DRVCC voltage; triggers UVLO if voltage drops >20% below target.
PGND (Pin 1)Power GroundHigh-current return path for DRVCC bypass and driver output; must be tied to SGND near IC and routed to MOSFET source.
SGND (Pin 2)Signal GroundLow-noise reference for FB, EN/SHDN, and internal bias circuits; separate from PGND but joined locally at IC.
IN (Pin 3)Logic InputNon-inverting TTL/CMOS-compatible input; accepts –15V to +15V swing; immune to ground bounce due to high-impedance buffer.
EN/SHDN (Pin 4)Enable/Shutdown ControlThree-state control: <0.45V = shutdown (<12µA IQ), 0.45–1.21V = enabled but output forced low, >1.21V = active switching.

Key Features

FeatureDesign Value
Hybrid Output StageNPN+P-MOS pull-up and N-MOS pull-down deliver rail-to-rail swing and 6A peak current with minimal shoot-through risk.
Programmable Gate Drive Voltage5–8V via FB pin feedback allows matching gate drive strength to MOSFET VGS(th) and QG requirements.
Supply-Independent Input ThresholdsVIH/VIL fixed at 2.4V/1.4V regardless of DRVCC or VIN - eliminates timing skew when gate voltage or supply varies.
Integrated Thermal ProtectionTurns off DRVCC and forces OUT low at 150°C junction temp, with 20°C hysteresis to prevent oscillation during recovery.
Ultra-Low Shutdown Current<12µA enables long-term standby in always-on systems without compromising battery life or system quiescent power.

Applications

DC/DC Synchronous Buck ConvertersIndustrial Motor Drives

Use Scenario: Driving high-side N-channel MOSFETs in 48V-to-12V synchronous buck converters operating at 500kHz–1MHz.

IC Role / Device Role / Timing Role: Gate driver providing fast, high-current turn-on/turn-off to minimize conduction and switching losses in the power stage.

Use Value: 30ns propagation delay and 13ns/8ns rise/fall times reduce dead-time uncertainty, improving efficiency by up to 1.2% at 1MHz versus slower drivers.

Use Scenario: Controlling N-channel MOSFET half-bridges in 24V brushless DC motor drives for HVAC actuators and factory automation.

IC Role / Device Role / Timing Role: High-current gate driver interfacing between microcontroller PWM outputs and power MOSFET gates.

Use Value: Logic-level input thresholds and –15V to +15V input tolerance eliminate level-shifting circuitry, reducing BOM count and PCB area.

Telecom Line CardsHigh-Voltage Charge Pumps

Use Scenario: Enabling hot-swap FETs and OR-ing diodes in redundant 48V telecom power distribution units.

IC Role / Device Role / Timing Role: Fast-turnoff gate driver ensuring rapid fault isolation during overcurrent events.

Use Value: <12µA shutdown current and undervoltage lockout on FB pin prevent erratic behavior during brownout conditions common in telecom backplanes.

Use Scenario: Driving flying capacitors in high-efficiency, high-voltage (>100V) charge pump inverters for LED backlighting and sensor biasing.

IC Role / Device Role / Timing Role: Precision gate driver synchronizing MOSFET switching with clock phase to maximize charge transfer efficiency.

Use Value: Adjustable DRVCC (5–8V) ensures full enhancement of high-VDS MOSFETs even under varying input rail conditions, maintaining >92% conversion efficiency across load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LM5113SDX/NOPBHigher 8A peak current, dual-output, integrated bootstrap diode; no programmable DRVCC; SO-8 package.Designed for half-bridge high-side/low-side driving; lacks FB-based gate voltage programming and UVLO on gate supply.Select when dual-output capability and higher peak current are required, and gate voltage flexibility is secondary.
UCC27531DR6A peak, single-output, 5V fixed gate drive; SO-8; no DRVCC regulation or FB pin; lower 12ns propagation delay.Optimized for fixed 5V gate drive in cost-sensitive, high-volume applications; no thermal shutdown or adjustable blanking.Select when system uses only 5V logic-level MOSFETs and thermal protection is handled externally.

Compared with LM5113SDX/NOPB and UCC27531DR, the LTC4441ES8-1#PBF uniquely combines programmable gate voltage (5–8V), supply-independent input thresholds, and integrated thermal/UVLO protection in an SO-8 footprint-making it optimal for designs requiring robustness across varying MOSFET types and input conditions.

Availability

LTC4441ES8-1#PBF is available at Aetrix Electronics and suitable for DC/DC converters, motor control modules, telecom line cards, and high-voltage charge pumps requiring stable component supply, extended temperature operation (–40°C to +125°C), and RoHS-compliant packaging.

Supply support for LTC4441ES8-1#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. (acquired Linear Technology in 2017) is a global leader in high-performance analog, mixed-signal, and power management semiconductors, serving industrial, automotive, communications, and healthcare markets.

The LTC4441 family was designed specifically for high-efficiency, high-frequency N-channel MOSFET gate driving in isolated and non-isolated DC/DC converters, where precision timing, thermal resilience, and gate voltage flexibility are critical.

FAQ

What is the maximum allowable VIN voltage for the LTC4441ES8-1#PBF?

The absolute maximum VIN rating for the LTC4441ES8-1#PBF is 28V. Continuous operation above 25V is not recommended per datasheet specifications, as electrical characteristics are guaranteed only up to 25V. Exceeding 25V may compromise long-term reliability and thermal performance, especially at elevated ambient temperatures.

Does the LTC4441ES8-1#PBF support adjustable leading-edge blanking like the LTC4441?

No, the LTC4441ES8-1#PBF does not support adjustable leading-edge blanking. This function is exclusive to the 10-lead LTC4441 (MSOP) variant, which includes BLANK and RBLANK pins. The LTC4441ES8-1#PBF is the SO-8 version without blanking circuitry, as confirmed in the Pin Configuration table and Applications Information section of the datasheet.

How is the DRVCC voltage programmed on the LTC4441ES8-1#PBF?

The DRVCC voltage on the LTC4441ES8-1#PBF is programmed using an external resistive divider connected between DRVCC (Pin 7) and SGND (Pin 2), with the FB pin (Pin 5) connected to the divider's center tap. The datasheet specifies R1 = 330kΩ for stability; R2 is calculated as R2 = 406kΩ / (DRVCC − 1.21V) to achieve the desired output (5–8V range).

What happens to the OUT pin during thermal shutdown on the LTC4441ES8-1#PBF?

During thermal shutdown, the LTC4441ES8-1#PBF disables the DRVCC regulator and forces the OUT pin low via its internal N-channel pull-down device (N1). This action ensures the driven MOSFET turns off safely, preventing uncontrolled conduction and potential system damage. The shutdown activates at 150°C junction temperature and releases with 20°C hysteresis.

Can the LTC4441ES8-1#PBF drive both standard-threshold and logic-level MOSFETs?

Yes, the LTC4441ES8-1#PBF can drive both standard-threshold (e.g., VGS(th) ≥ 4V) and logic-level (e.g., VGS(th) ≤ 2.5V) N-channel MOSFETs. Its programmable DRVCC output (5–8V) allows precise gate overdrive tuning, while its supply-independent input thresholds ensure reliable logic-level compatibility without external level shifters.

LTC4441ES8-1#PBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Low-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
N-Channel MOSFET
Voltage - Supply:
5V ~ 25V
Logic Voltage - VIL, VIH:
1.8V, 2V
Current - Peak Output (Source, Sink):
6A, 6A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
13ns, 8ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

LTC4441ES8-1#PBF FAQ

1.How can I place an order for LTC4441ES8-1#PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC4441ES8-1#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC4441ES8-1#PBF reliable?

The price and inventory of LTC4441ES8-1#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4441ES8-1#PBF is usually 5 days.

3.What payment methods are accepted for LTC4441ES8-1#PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4441ES8-1#PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC4441ES8-1#PBF?

LTC4441ES8-1#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC4441ES8-1#PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC4441ES8-1#PBF?

For technical support, including LTC4441ES8-1#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4441ES8-1#PBF requirements.

6.How does Aetrix verify that LTC4441ES8-1#PBF is sourced from the original manufacturer or authorized distributors?

All LTC4441ES8-1#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4441ES8-1#PBF meets industry standards.

7.What is the process for return or replacement of LTC4441ES8-1#PBF?

All LTC4441ES8-1#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4441ES8-1#PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC4441ES8-1#PBF part is unused and in its original packaging.

Return procedure for LTC4441ES8-1#PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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