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Analog Devices Inc. LTC4442EMS8E#TRPBF
- Part No.:
- LTC4442EMS8E#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4442EMS8E#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,431
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Product details
Overview
LTC4442EMS8E#TRPBF from Analog Devices (formerly Linear Technology) is a high-speed dual N-channel MOSFET gate driver IC designed for synchronous buck DC/DC converters. It delivers 2.4A peak pull-up and 5A peak pull-down current, supports up to 42V bootstrapped supply (BOOST–TS), features adaptive shoot-through protection, and operates with VCC from 6V to 9.5V - enabling efficient control of high-side and low-side power MOSFETs in high-density power modules.
For engineers reviewing the LTC4442EMS8E#TRPBF datasheet, LTC4442EMS8E#TRPBF pinout, LTC4442EMS8E#TRPBF application, or LTC4442EMS8E#TRPBF equivalent, key selection considerations include its 8ns TG fall time driving 3nF, undervoltage lockout thresholds (2.60V/2.75V on VLOGIC; 2.60V/3.20V on VCC), thermally enhanced MSOP-8 package with exposed pad, and compatibility with PWM controllers using separate logic supply (VLOGIC).
Technical Context
The LTC4442EMS8E#TRPBF implements a three-state input stage with VLOGIC-referenced thresholds (VIH/VIL) that scale with logic supply voltage (3V–9.5V), enabling seamless interfacing with diverse PWM controllers. Its internal level shifter translates IN logic signals to the bootstrapped high-side domain (up to 42V above TS), while adaptive shoot-through protection actively monitors external MOSFET voltages to prevent cross-conduction.
Undervoltage lockout independently monitors both VLOGIC (2.65V falling threshold) and VCC (3.04V falling threshold), forcing TG and BG outputs low during fault conditions. The output stage uses bipolar+N-MOS hybrid pull-downs - including a dedicated NPN (Q3) on BG - achieving 5ns BG fall time and 8ns TG fall time into 3nF loads, critical for minimizing switching losses in high-frequency (>500kHz) buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 6V to 9.5V - powers low-side driver directly and high-side via bootstrap diode; enables stable operation across industrial input rails. |
| BOOST–TS Max Voltage | 42V - supports high-input-voltage synchronous buck stages (e.g., 32V VIN) with adequate margin for ringing and overshoot. |
| TG Peak Pull-Down | 2.4A - ensures rapid turn-off of high-side MOSFETs with large gate charge (QG > 50nC) at high switching frequencies. |
| BG Peak Pull-Down | 5A - delivers aggressive low-side turn-off to suppress Miller-induced false turn-on during high dv/dt transitions. |
| tg Fall Time (3nF) | 8ns - minimizes high-side MOSFET transition loss; critical for efficiency in >1MHz converter designs. |
| VLOGIC UVLO Threshold | 2.65V (falling) - disables driver when controller logic supply collapses, preventing erratic MOSFET switching during brownout. |
| Operating Temp | –40°C to 85°C - qualified for industrial ambient environments without derating in properly heatsinked layouts. |
Pinout & Package
The LTC4442EMS8E#TRPBF is housed in an 8-lead MSOP package (MS8E) with exposed thermal pad (Pin 9, GND), requiring soldering to PCB ground for thermal performance (θJA ≈ 40°C/W). Pin 1 (TG) drives high-side MOSFET gate referenced to TS; Pin 3 (BG) drives low-side MOSFET gate referenced to GND; Pin 2 (TS) connects to high-side source node; Pin 4 and Pin 9 are GND connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TG (Pin 1) | High-side gate driver output | Swings between TS and BOOST; must drive high-side MOSFET gate with minimal trace inductance to avoid oscillation. |
| TS (Pin 2) | High-side source reference | Connects directly to high-side MOSFET source; serves as local return for TG output and bootstrap capacitor negative terminal. |
| BG (Pin 3) | Low-side gate driver output | Swings between GND and VCC; requires low-inductance path to low-side MOSFET gate to sustain 5A peak pull-down current. |
| GND (Pins 4 & 9) | Power and thermal ground | Exposed pad (Pin 9) must be soldered to ≥2500 mm² copper area; Pins 4+9 form low-impedance return for all internal currents. |
| IN (Pin 5) | Digital input signal | Three-state interface: high-Z triggers shutdown; thresholds scale with VLOGIC (e.g., VIH(TG)=3.5V @ VLOGIC=5V). |
| VLOGIC (Pin 6) | Logic supply input | Powers input buffer; ties to controller's logic rail (e.g., 3.3V or 5V) to match threshold levels and eliminate level-shifting circuitry. |
| VCC (Pin 7) | Driver supply input | Powers low-side driver directly and charges bootstrap capacitor via external diode; bypass with ≥1μF ceramic near pin. |
| BOOST (Pin 8) | Bootstrap supply node | Connects to bootstrap capacitor positive terminal; voltage = VCC – Vfwd (diode) + VTS; must withstand up to 42V relative to TS. |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors TS and BG node voltages in real time to delay complementary MOSFET turn-on until safe conduction margins are met - eliminates need for fixed dead-time programming. |
| VLOGIC-referenced input thresholds | VIH/VIL track VLOGIC supply (3V–9.5V); enables direct interface with 3.3V or 5V controllers without external level shifters or resistor dividers. |
| Thermally enhanced MSOP-8 | Exposed pad reduces θJA to 40°C/W on 2500 mm² double-sided copper; sustains 1.2W dissipation at 85°C ambient without forced air. |
| Independent VLOGIC/VCC UVLO | Separate lockout circuits disable outputs if either supply drops below safe operating threshold - prevents partial drive and MOSFET latch-up during supply sequencing faults. |
| Hybrid BG pull-down architecture | Combines N-MOS and NPN transistors to deliver 5A peak sink current - suppresses dv/dt-induced false turn-on in low-side MOSFET during high-frequency switching. |
Applications
| Telecom Point-of-Load Converter | Industrial Motor Drive Gate Control |
|---|---|
Use Scenario: 12V input to 1.2V/30A output digital DC/DC module for FPGA core power in 5G baseband units. IC Role / Device Role / Timing Role: Synchronous buck gate driver controlling RJK0305 (HS) and RJK0301 (LS) MOSFETs; provides precise timing alignment between TG and BG with adaptive dead-time. Use Value: 8ns TG fall time and 5ns BG fall time minimize overlap conduction loss at 1MHz switching, improving full-load efficiency by 1.2% versus legacy drivers. | Use Scenario: Isolated gate drive stage for 24V BLDC motor inverter half-bridge, powered from auxiliary 7V rail. IC Role / Device Role / Timing Role: High-side/low-side driver with bootstrap supply referenced to motor phase node (TS); withstands 38V max TS swing per Absolute Maximum Ratings. Use Value: 42V BOOST–TS rating and 2.4A/5A drive strength enable robust gate control of 100V-rated MOSFETs under high dv/dt motor commutation noise. |
| Server VR13 Voltage Regulator | Medical Imaging Power Supply |
Use Scenario: Multiphase buck controller companion in 1.8V/120A CPU VR with LTC7510 master IC. IC Role / Device Role / Timing Role: Phase-specific gate driver receiving PWM from LTC7510; VLOGIC tied to 3.3V controller rail for matched thresholds and noise immunity. Use Value: VLOGIC UVLO (2.65V) synchronizes driver disable with controller power-good assertion, preventing uncontrolled startup during rail ramp-up. | Use Scenario: Compact 48V-to-5V isolated DC/DC for CT scanner detector bias supply, requiring low EMI and high reliability. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier driver in active-clamp forward topology; TS referenced to primary switch node. Use Value: Independent VCC/VLOGIC UVLO ensures gate drive ceases only when both controller logic and driver supply collapse - eliminating single-point failure modes in safety-critical systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous buck gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4442IMS8E#TRPBF | Same electrical specs; rated for –40°C to 85°C industrial temp range (vs. E-grade 0°C to 85°C for LTC4442EMS8E#TRPBF). | Required for extended temperature deployments (e.g., outdoor telecom, factory automation). | Select I-grade when ambient exceeds 0°C minimum or long-term reliability validation at cold start is mandated. |
| LTC4442EMS8E-1#TRPBF | VCC UVLO thresholds raised to 4.7V/6.2V (falling/rising); otherwise identical pinout, timing, and drive strength. | Suitable for systems where VCC is derived from higher-voltage rails (e.g., 5V LDO from 12V input) to avoid premature UVLO trip. | Choose -1 variant when VCC supply has higher nominal voltage and tighter regulation tolerance than standard 7V buck output. |
Compared with LTC4442IMS8E#TRPBF and LTC4442EMS8E-1#TRPBF, the LTC4442EMS8E#TRPBF offers the baseline industrial-grade timing and drive performance with standard UVLO thresholds, making it optimal for cost-sensitive, temperature-moderate applications like embedded computing power supplies.
Availability
LTC4442EMS8E#TRPBF is available at Aetrix Electronics and suitable for telecom point-of-load converters, industrial motor drive gate control, and server VR13 voltage regulators requiring stable component supply, consistent parametric performance, and long-lifecycle support.
Supply support for LTC4442EMS8E#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its precision analog and power management portfolio. Linear pioneered high-performance gate drivers with integrated protection and thermal optimization for demanding power conversion applications.
The LTC4442EMS8E#TRPBF belongs to Linear's high-speed synchronous MOSFET driver product line, engineered specifically for high-efficiency, high-frequency buck converters in space-constrained industrial and communications equipment where shoot-through prevention and fast switching are critical.
FAQ
What is the maximum allowable voltage on the BOOST pin of the LTC4442EMS8E#TRPBF relative to TS?
The BOOST pin of the LTC4442EMS8E#TRPBF supports a maximum voltage of 42V relative to TS, as specified in the Absolute Maximum Ratings table. This allows the device to operate safely in high-input-voltage synchronous buck configurations where the TS node swings near VIN (e.g., 32V), provided the bootstrap capacitor and external diode are rated accordingly. Exceeding 42V risks permanent damage.
Does the LTC4442EMS8E#TRPBF require external bootstrap diode and capacitor?
Yes, the LTC4442EMS8E#TRPBF requires an external bootstrap diode (e.g., CMDSH3) connected between VCC and BOOST, and an external bootstrap capacitor (e.g., 0.22μF) between BOOST and TS. These components generate the floating high-side supply needed to drive the top-gate output (TG) above the TS node. Omitting them prevents high-side MOSFET turn-on.
How does the three-state input of the LTC4442EMS8E#TRPBF improve system reliability?
The three-state input of the LTC4442EMS8E#TRPBF interprets floating IN as a shutdown command, pulling both TG and BG low. This behavior prevents unintended MOSFET conduction during controller reset, power sequencing gaps, or communication bus faults - a critical safety feature in systems like medical imaging power supplies where uncontrolled switching could damage sensitive detectors.
What thermal design practices are mandatory for reliable operation of the LTC4442EMS8E#TRPBF?
Reliable operation of the LTC4442EMS8E#TRPBF requires soldering the exposed thermal pad (Pin 9) to a ≥2500 mm² copper area on the PCB, using multiple thermal vias to inner ground planes. Without this, junction temperature can exceed 125°C even at moderate load, triggering thermal shutdown. The datasheet specifies θJA = 40°C/W only when the pad is properly connected.
Can the LTC4442EMS8E#TRPBF drive MOSFETs with gate charges exceeding 100nC?
Yes, the LTC4442EMS8E#TRPBF can drive MOSFETs with QG > 100nC effectively due to its 2.4A peak pull-up and 5A peak pull-down current capability. For example, turning on a 120nC MOSFET in 50ns requires ~2.4A average current - well within the LTC4442EMS8E#TRPBF's rated peak drive strength, provided layout minimizes gate loop inductance and bypass capacitors are placed close to VCC/GND pins.
LTC4442EMS8E#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6V ~ 9.5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 2.4A, 2.4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 42 V
- Rise / Fall Time (Typ):
- 12ns, 8ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4442EMS8E#TRPBF FAQ
1.How can I place an order for LTC4442EMS8E#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4442EMS8E#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4442EMS8E#TRPBF reliable?
The price and inventory of LTC4442EMS8E#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4442EMS8E#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4442EMS8E#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4442EMS8E#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4442EMS8E#TRPBF?
LTC4442EMS8E#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4442EMS8E#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4442EMS8E#TRPBF?
For technical support, including LTC4442EMS8E#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4442EMS8E#TRPBF requirements.
6.How does Aetrix verify that LTC4442EMS8E#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4442EMS8E#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4442EMS8E#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4442EMS8E#TRPBF?
All LTC4442EMS8E#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4442EMS8E#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4442EMS8E#TRPBF part is unused and in its original packaging.
Return procedure for LTC4442EMS8E#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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