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Analog Devices Inc. LTC4444EMS8E#TRPBF
- Part No.:
- LTC4444EMS8E#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4444EMS8E#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,097
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Product details
Overview
LTC4444EMS8E#TRPBF from Analog Devices is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver designed for buck and buck-boost DC/DC converters. It drives both high-side (TG) and low-side (BG) N-MOSFETs with supply voltages up to 100V, features adaptive shoot-through protection, 2.5A TG / 3A BG peak pull-up current, and operates across –40°C to 125°C junction temperature range - enabling use in automotive power supplies and high-density telecom modules.
For engineers reviewing the LTC4444EMS8E#TRPBF datasheet, LTC4444EMS8E#TRPBF pinout, LTC4444EMS8E#TRPBF application, or LTC4444EMS8E#TRPBF equivalent, key selection criteria include bootstrap voltage capability (up to 114V), undervoltage lockout thresholds (6.15V/6.6V), gate drive strength (1.2Ω TG / 0.55Ω BG pull-down), timing performance (5ns TG fall time @ 1nF), and thermal management via exposed-pad MSOP package.
Technical Context
The LTC4444EMS8E#TRPBF integrates dual independent input buffers with CMOS-compatible thresholds (VIH = 2.75V, VIL = 2.3V, 450mV hysteresis), internal level-shifting for high-side control referenced to TS, and adaptive shoot-through logic that monitors TINP/BINP states and TS voltage transitions to prevent simultaneous conduction. Its output stage uses bipolar pull-up transistors and N-MOSFET pull-down devices to achieve fast switching with strong sink capability.
It supports bootstrapped high-side operation with BOOST–TS up to 114V, requires external bootstrap diode and capacitor between VCC and BOOST, and includes undervoltage lockout on VCC (6.15V falling, 6.6V rising) plus thermal shutdown at TJ > 160°C. The device draws only 350µA quiescent current at VCC = 12V and delivers 5ns/8ns (fall/rise) TG timing driving 1nF.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 7.2V to 13.5V - powers logic, input buffers, and low-side driver directly; defines minimum gate overdrive for low-side MOSFET turn-on. |
| BOOST–TS Max Voltage | 114V - enables high-side gate drive in 100V-input buck converters without external level-shifters or isolated supplies. |
| TG Pull-Down Resistance | 1.2Ω typical - ensures rapid discharge of high-side MOSFET gate capacitance, critical for minimizing cross-conduction during TS node rise. |
| BG Pull-Down Resistance | 0.55Ω typical - provides strong low-side gate discharge to suppress Miller-induced false turn-on during high dv/dt switching events. |
| TG Fall Time (1nF) | 5ns - reduces high-side MOSFET transition time in linear region, directly lowering switching losses in high-frequency (>1MHz) power stages. |
| UVLO Threshold Hysteresis | 450mV - prevents oscillatory output behavior near VCC dropout by ensuring clean re-enable after brownout recovery. |
| Junction Temp Range | –40°C to 125°C - qualified for under-hood automotive applications and industrial power modules requiring extended thermal reliability. |
Pinout & Package
Package: 8-Lead Plastic MSOP (MS8E) with exposed thermal pad (Pin 9 = GND), θJA = 40°C/W when soldered to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced digital control for TG output; VIH = 2.75V, VIL = 2.3V - compatible with standard logic drivers and PWM controllers. |
| BINP (Pin 2) | Low-side input signal | Ground-referenced digital control for BG output; independent of TINP, enabling flexible phase control or dead-time insertion. |
| VCC (Pin 3) | Low-side supply and bootstrap source | Powers internal logic and BG driver; also feeds external bootstrap diode to BOOST - must be bypassed with low-ESR ceramic capacitor to GND. |
| BG (Pin 4) | Low-side gate driver output | Swings rail-to-rail between VCC and GND; capable of 3A peak pull-up and 0.55Ω pull-down - drives large Qg MOSFETs efficiently. |
| NC (Pin 5) | No connect | Internally unconnected - no PCB trace or pad required; leave floating or omit from layout. |
| BOOST (Pin 6) | High-side bootstrapped supply | Connected via external capacitor to TS; voltage swings from VCC–VD to VIN+VCC–VD - sets upper rail for TG output swing. |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; 2.5A peak pull-up and 1.2Ω pull-down - sustains strong gate drive despite high dv/dt on TS node. |
| TS (Pin 8) | High-side MOSFET source connection | Reference node for high-side output; carries full switching current - must be routed with low-inductance, wide copper to minimize ringing. |
| GND (Pin 9, Exposed Pad) | Power and signal ground | Thermal and electrical reference for all internal circuitry; must be soldered to solid PCB ground plane for thermal performance and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors BINP/TINP timing and TS voltage to dynamically enforce dead time - eliminates need for external timing circuits or controller-level dead-time programming. |
| Bootstrap supply support to 114V | Enables direct high-side drive in 100V-input converters without auxiliary supplies or transformers - reduces BOM count and layout complexity. |
| Strong low-side pull-down (0.55Ω) | Prevents unintended turn-on of low-side MOSFET due to Miller coupling from TS node - critical for stable operation in high dv/dt (>50V/ns) applications. |
| Fast TG fall time (5ns @ 1nF) | Minimizes high-side MOSFET conduction overlap during hard-switching transitions - directly improves efficiency in high-frequency (>500kHz) power stages. |
| Exposed thermal pad (MS8E) | Reduces θJA to 40°C/W when soldered - allows sustained 2.5A/3A peak currents without thermal derating in compact industrial or automotive layouts. |
Applications
| Automotive Power Supplies | Telecom Intermediate Bus Converters |
|---|---|
|
Use Scenario: 48V–60V battery-fed DC/DC converter supplying 12V/30A to vehicle infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling synchronous rectification in a buck topology; manages 100V-rated MOSFETs with precise timing to avoid shoot-through at 300kHz switching. Use Value: Enables AEC-Q100-compliant design with integrated UVLO and thermal shutdown - eliminates external protection components and simplifies qualification. |
Use Scenario: 54V intermediate bus converter delivering 12V/20A to server PSUs in 48V datacenter architectures. IC Role / Device Role / Timing Role: Dual N-MOSFET driver operating with 114V BOOST–TS swing to sustain gate drive during 100V transient surges on input bus. Use Value: Delivers 5ns TG fall time and 0.55Ω BG pull-down to maintain <1% cross-conduction loss at 1MHz - increases system efficiency by 1.2% versus legacy drivers. |
| High-Density Power Modules | Distributed Power Architectures |
|
Use Scenario: Compact 36mm × 36mm × 10mm quarter-brick module converting 36–75V to 48V/10A for telecom base stations. IC Role / Device Role / Timing Role: Gate driver co-located with power MOSFETs on top-side layer; leverages exposed pad for direct thermal coupling to heatsink. Use Value: MS8E package with 40°C/W θJA enables full-load operation at 70°C ambient without forced air - reduces module size and cooling cost. |
Use Scenario: Point-of-load regulator in industrial PLC backplane, accepting 24–48V input and delivering 5V/15A to FPGA and I/O banks. IC Role / Device Role / Timing Role: Synchronous buck driver interfacing with analog PWM controller; accepts ground-referenced TINP/BINP signals with 450mV hysteresis. Use Value: Input threshold independence from VCC variation ensures robust timing across wide input range - eliminates need for level-shifting ICs or resistor dividers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage synchronous N-MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4446IMS8E#TRPBF | No adaptive shoot-through protection; identical VCC range (7.2–13.5V), same 114V BOOST–TS rating, and matching 3A BG / 2.5A TG drive strength. | Suitable where controller-level dead-time control is available or shoot-through risk is mitigated by layout; lacks automatic TS monitoring. | Select when system-level timing control is preferred and board space is constrained - same footprint but lower gate-drive safety margin. |
| LTC4440IMS8E#TRPBF | Higher VCC range (8–15V), lower max BOOST–TS (80V), reduced peak pull-up (2.4A), higher pull-down resistance (1.5Ω), no adaptive shoot-through. | Limited to ≤80V input systems; weaker low-side sink limits use with high-Qg MOSFETs in high-dv/dt environments. | Choose for cost-sensitive 48V telecom or industrial designs where 114V headroom and ultra-fast fall times are not required. |
Compared with LTC4444EMS8E#TRPBF, LTC4446 offers identical drive strength and voltage ratings but removes adaptive shoot-through logic - trading safety for simplicity. LTC4440 sacrifices 34V BOOST–TS headroom and 27% lower BG pull-down strength, making it unsuitable for 100V automotive or high-efficiency telecom applications.
Availability
LTC4444EMS8E#TRPBF is available at Aetrix Electronics and suitable for automotive power supplies, telecom intermediate bus converters, and high-density power modules requiring stable component supply, AEC-Q100 compliance, and long-term industrial lifecycle support.
Supply support for LTC4444EMS8E#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, communications, and automotive markets since 1965.
The LTC4444EMS8E#TRPBF belongs to Analog Devices' high-voltage power management IC portfolio, engineered specifically for synchronous buck/buck-boost converters in harsh environments - emphasizing robust gate drive, fault resilience, and thermal reliability.
FAQ
What is the maximum allowable voltage on the TS pin of the LTC4444EMS8E#TRPBF?
The absolute maximum rating for TS voltage is –5V to 100V. This allows the LTC4444EMS8E#TRPBF to operate safely in 100V-input buck converters where the TS node swings from GND to VIN during switching. Exceeding 100V risks permanent damage per Absolute Maximum Ratings table.
Does the LTC4444EMS8E#TRPBF require external bootstrap components, and if so, what are the key requirements?
Yes, the LTC4444EMS8E#TRPBF requires an external bootstrap diode between VCC and BOOST, and a bootstrap capacitor between BOOST and TS. The diode must withstand reverse voltage ≥ VCC and forward current sufficient for gate charge replenishment; the capacitor must be low-ESR ceramic (typically 0.1µF–1µF) placed adjacent to Pins 6 and 8 to minimize loop inductance.
How does adaptive shoot-through protection function in the LTC4444EMS8E#TRPBF without external timing components?
The LTC4444EMS8E#TRPBF implements adaptive shoot-through protection by monitoring BINP/TINP logic states and the TS node voltage in real time. If BG remains high when TINP asserts, TG activation is delayed until BG falls. If TS stays high after TINP deasserts, BG is delayed by 150ns - eliminating need for fixed dead-time circuits while preventing cross-conduction under varying load and layout conditions.
Can the LTC4444EMS8E#TRPBF drive both high-side and low-side MOSFETs with different gate threshold voltages?
Yes, the LTC4444EMS8E#TRPBF drives both MOSFETs using rail-to-rail outputs: BG swings 0V to VCC (7.2–13.5V), TG swings TS to BOOST (up to 114V above TS). This provides sufficient VGS overdrive for standard 2V–4V VTH MOSFETs, and its 1.2Ω/0.55Ω pull-down resistances ensure reliable turn-off even for low-threshold devices susceptible to Miller turn-on.
What thermal considerations apply to the exposed pad (Pin 9) of the LTC4444EMS8E#TRPBF in PCB layout?
The exposed pad (Pin 9) of the LTC4444EMS8E#TRPBF must be soldered to a solid PCB ground plane to achieve the specified θJA = 40°C/W. Failure to do so increases thermal resistance significantly - potentially exceeding 100°C/W - leading to premature thermal shutdown at moderate loads. Use ≥2500mm² double-sided 1oz copper area with multiple thermal vias for optimal heat dissipation.
LTC4444EMS8E#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4444EMS8E#TRPBF FAQ
1.How can I place an order for LTC4444EMS8E#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4444EMS8E#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4444EMS8E#TRPBF reliable?
The price and inventory of LTC4444EMS8E#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444EMS8E#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4444EMS8E#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4444EMS8E#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4444EMS8E#TRPBF?
LTC4444EMS8E#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4444EMS8E#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4444EMS8E#TRPBF?
For technical support, including LTC4444EMS8E#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444EMS8E#TRPBF requirements.
6.How does Aetrix verify that LTC4444EMS8E#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4444EMS8E#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444EMS8E#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4444EMS8E#TRPBF?
All LTC4444EMS8E#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444EMS8E#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4444EMS8E#TRPBF part is unused and in its original packaging.
Return procedure for LTC4444EMS8E#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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