Analog Devices Inc. LTC4444HMS8E-5#PBF
- Part No.:
- LTC4444HMS8E-5#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4444HMS8E-5#PBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:

- Shipping:

Inventory:115
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
LTC4444HMS8E-5#PBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver optimized for buck and buck-boost DC/DC converters with up to 100V input. It delivers 1.4A peak top-gate pull-up and 1.75A peak bottom-gate pull-up current, features adaptive shoot-through protection, and operates with VCC from 4.5V to 13.5V - enabling efficient control of high-side and low-side power MOSFETs in automotive power supplies and high-density power modules.
For engineers reviewing the LTC4444HMS8E-5#PBF datasheet, LTC4444HMS8E-5#PBF pinout, LTC4444HMS8E-5#PBF application, or LTC4444HMS8E-5#PBF equivalent, key selection criteria include its 150°C maximum junction temperature rating, bootstrapped high-side drive capability up to 114V above ground, and integrated undervoltage lockout with 450mV hysteresis - critical for reliable operation in high-noise, high-voltage industrial and automotive power systems.
Technical Context
The LTC4444HMS8E-5#PBF implements dual independent CMOS-compatible inputs (TINP/BINP) with internally regulated thresholds (VIH = 2.75V, VIL = 2.3V), decoupled from VCC variations. Its high-side driver uses internal level-shifting to interface with bootstrapped supply (BOOST–TS), supporting TS voltages up to 100V and BOOST up to 114V above ground.
Adaptive shoot-through protection monitors TS voltage transitions and enforces non-overlapping gate drive timing: TG is delayed until BG fully discharges, and BG is enabled only after TS falls below threshold or after a 150ns timeout. Undervoltage lockout disables both outputs when VCC drops below 3.55V, ensuring safe MOSFET turn-off during brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 4.5V to 13.5V - supports wide-input industrial and automotive rails without external regulation |
| Max BOOST–TS Voltage | 114V - enables high-side drive in 100V-input synchronous buck converters |
| Top Gate Pull-Up Current | 1.4A peak - reduces MOSFET turn-on time for high-Ciss devices (e.g., >3nF) |
| Bottom Gate Pull-Down RDS(on) | 0.75Ω typical - ensures fast, robust low-side MOSFET turn-off under high dV/dt noise |
| TG Fall Time (1nF load) | 5ns - minimizes switching loss in high-frequency (>1MHz) power stages |
| UVLO Threshold Hysteresis | 450mV - prevents oscillation during VCC recovery in noisy power environments |
| Junction Temp Range | –40°C to +150°C - qualified for under-hood automotive and industrial high-temp applications |
Pinout & Package
Package: 8-lead MSOP with exposed thermal pad (Pin 9 = GND), rated θJA = 40°C/W when soldered to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS input controlling TG output; VIH/VIL independent of VCC |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS input controlling BG output; 450mV hysteresis prevents noise-induced false triggering |
| VCC (Pin 3) | Low-side supply and logic rail | Powers input buffers, logic, and BG driver; requires local 0.1μF ceramic bypass to GND |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; 1.75A peak pull-up / 0.75Ω pull-down drives large MOSFETs |
| NC (Pin 5) | No connect | Not internally bonded; must remain unconnected |
| BOOST (Pin 6) | High-side bootstrapped supply | Connects to external bootstrap capacitor and diode; supports up to 114V above TS |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; 1.4A peak pull-up / 1.5Ω pull-down handles high Ciss |
| TS (Pin 8) | High-side MOSFET source node | Reference for TG output and shoot-through detection; must be routed with low-inductance path |
| GND (Pin 9, Exposed Pad) | Power and thermal ground | Exposed pad is functional GND; mandatory soldering to PCB ground plane for thermal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors TS voltage to enforce non-overlapping gate drive, eliminating cross-conduction even during fast transients |
| Bootstrapped high-side drive | Supports TS up to 100V and BOOST up to 114V above TS - enables use in 100V-input buck converters |
| Thermally enhanced MS8E package | Exposed GND pad reduces θJA to 40°C/W - sustains 150°C junction temp with proper PCB layout |
| CMOS input thresholds with hysteresis | VIH = 2.75V, VIL = 2.3V, 450mV hysteresis - immune to noise on TINP/BINP in high-dV/dt environments |
| Integrated undervoltage lockout | Disables TG/BG when VCC < 3.55V - prevents partial turn-on and shoot-through during brownout |
Applications
| Automotive Power Supplies | Distributed Power Architectures |
|---|---|
Use Scenario: 12V/24V/48V battery-fed DC/DC conversion in engine control units and ADAS modules with input transients up to 100V. IC Role / Device Role / Timing Role: High-side/low-side gate driver for synchronous buck controller ICs (e.g., LTC3780), managing MOSFET switching at 200kHz–1MHz. Use Value: 150°C junction rating and adaptive shoot-through protection ensure reliability during cold-crank and load-dump events. |
Use Scenario: Point-of-load (POL) regulation in telecom base stations and server power shelves requiring high efficiency at 48V input. IC Role / Device Role / Timing Role: Gate driver for high-current, high-frequency buck converters delivering 12V/48V/60V outputs with tight transient response. Use Value: 1.4A/1.75A peak drive currents and sub-10ns rise/fall times minimize conduction losses in GaN/SiC-based designs. |
| High-Density Power Modules | Telecommunication Systems |
Use Scenario: Compact, thermally constrained DC/DC modules for 5G radio units and edge computing where board space and thermal management are critical. IC Role / Device Role / Timing Role: Dual N-channel driver enabling high-efficiency, low-profile synchronous rectification in half-bridge configurations. Use Value: MS8E package with exposed GND pad achieves 40°C/W θJA, reducing heatsink requirements in sealed enclosures. |
Use Scenario: Intermediate bus converters (IBC) in optical line terminals and packet switches operating from –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Gate driver interfacing with PWM controllers to drive high-side/low-side MOSFETs in isolated/non-isolated buck-boost topologies. Use Value: Wide VCC range (4.5–13.5V) and stable input thresholds allow direct interface with diverse controller ICs without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage synchronous gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4446 | No shoot-through protection; higher VCC min (6.6V); 3A peak pull-up but no adaptive timing control | Suitable for fixed-frequency, low-noise applications where external timing control is available | Select LTC4446 only if shoot-through risk is mitigated by controller-level dead-time management |
| LTC4444IMS8E-5#PBF | Same functionality and pinout, but rated for –40°C to +125°C junction (vs. +150°C for H-grade) | Lower-cost option for commercial/industrial applications not requiring extended high-temp operation | Choose LTC4444HMS8E-5#PBF when operating ambient exceeds 105°C or automotive qualification is required |
Compared with LTC4446, the LTC4444HMS8E-5#PBF provides guaranteed shoot-through immunity and wider VCC range, while versus LTC4444IMS8E-5#PBF it adds 25°C higher junction temperature margin - essential for under-hood automotive and high-power density designs where thermal headroom is constrained.
Availability
LTC4444HMS8E-5#PBF is available at Aetrix Electronics and suitable for automotive power supplies, distributed power architectures, and high-density power modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for LTC4444HMS8E-5#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains full product support, manufacturing, and qualification for legacy Linear parts including the LTC4444 family.
The LTC4444 product line was designed specifically for high-efficiency, high-voltage synchronous buck converter gate drive - emphasizing robustness against shoot-through, thermal resilience, and compatibility with demanding automotive and industrial power system requirements.
FAQ
What is the maximum allowable voltage on the TS pin of the LTC4444HMS8E-5#PBF?
The TS pin of the LTC4444HMS8E-5#PBF has an absolute maximum rating of –5V to +100V. This allows direct connection to the source of high-side N-channel MOSFETs in buck converters with up to 100V input. Operation beyond this range risks permanent damage. The LTC4444HMS8E-5#PBF's adaptive shoot-through protection relies on accurate TS voltage monitoring, so layout must minimize noise coupling to this pin.
Does the LTC4444HMS8E-5#PBF require external bootstrap diodes and capacitors?
Yes, the LTC4444HMS8E-5#PBF requires an external bootstrap diode (typically Schottky) between VCC and BOOST, and a ceramic bootstrap capacitor (typically 100nF–1μF) between BOOST and TS. These components establish the floating high-side supply needed to drive the top-gate output (TG). The LTC4444HMS8E-5#PBF does not integrate these passive components.
How does the adaptive shoot-through protection in the LTC4444HMS8E-5#PBF differ from fixed dead-time schemes?
The LTC4444HMS8E-5#PBF's adaptive shoot-through protection dynamically monitors the TS voltage to detect when the low-side MOSFET has fully turned off before enabling the high-side driver. Unlike fixed dead-time, it avoids unnecessary delays during light loads or varying switching frequencies - preserving efficiency while guaranteeing zero cross-conduction. This behavior is intrinsic to the LTC4444HMS8E-5#PBF's internal circuitry and requires no external configuration.
Can the LTC4444HMS8E-5#PBF drive both high-side and low-side MOSFETs in a half-bridge configuration?
Yes, the LTC4444HMS8E-5#PBF is explicitly designed for synchronous half-bridge (buck) topologies: TG drives the high-side N-channel MOSFET gate referenced to TS, and BG drives the low-side N-channel MOSFET gate referenced to GND. Its 1.4A/1.75A peak drive strength, sub-10ns switching times, and 114V BOOST–TS rating make it suitable for high-performance half-bridge implementations using discrete or integrated power stages.
What is the purpose of the exposed pad (Pin 9) on the LTC4444HMS8E-5#PBF MS8E package?
The exposed pad (Pin 9) on the LTC4444HMS8E-5#PBF is electrically and thermally connected to GND. It must be soldered to a PCB ground plane to achieve the specified θJA = 40°C/W thermal resistance. Failure to solder this pad results in significantly degraded thermal performance - potentially exceeding the 150°C maximum junction temperature under normal load conditions. The LTC4444HMS8E-5#PBF's reliability and power handling depend critically on proper exposed-pad implementation.
LTC4444HMS8E-5#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4444HMS8E-5#PBF FAQ
1.How can I place an order for LTC4444HMS8E-5#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4444HMS8E-5#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4444HMS8E-5#PBF reliable?
The price and inventory of LTC4444HMS8E-5#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444HMS8E-5#PBF is usually 5 days.
3.What payment methods are accepted for LTC4444HMS8E-5#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4444HMS8E-5#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4444HMS8E-5#PBF?
LTC4444HMS8E-5#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4444HMS8E-5#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4444HMS8E-5#PBF?
For technical support, including LTC4444HMS8E-5#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444HMS8E-5#PBF requirements.
6.How does Aetrix verify that LTC4444HMS8E-5#PBF is sourced from the original manufacturer or authorized distributors?
All LTC4444HMS8E-5#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444HMS8E-5#PBF meets industry standards.
7.What is the process for return or replacement of LTC4444HMS8E-5#PBF?
All LTC4444HMS8E-5#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444HMS8E-5#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4444HMS8E-5#PBF part is unused and in its original packaging.
Return procedure for LTC4444HMS8E-5#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LTC4444HMS8E-5#PBF Tags

-
ZXGD3009E6TA
Diodes Incorporated

-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments

-
MCP1416T-E/OT
Microchip Technology

-
MCP1402T-E/OT
Microchip Technology

-
MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

