Analog Devices Inc. LTC4444HMS8E-5#TRPBF
- Part No.:
- LTC4444HMS8E-5#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4444HMS8E-5#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:

- Shipping:

Inventory:1,055
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Product details
Overview
LTC4444HMS8E-5#TRPBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver IC designed for buck and buck-boost DC/DC converters. It drives both high-side and low-side N-MOSFETs with 1.4A peak top-gate pull-up, 1.75A peak bottom-gate pull-up, and adaptive shoot-through protection. It operates with VCC from 4.5V to 13.5V and supports bootstrapped high-side supply up to 114V above ground - enabling use in automotive power supplies and high-density telecom modules.
For engineers reviewing the LTC4444HMS8E-5#TRPBF datasheet, LTC4444HMS8E-5#TRPBF pinout, LTC4444HMS8E-5#TRPBF application, or LTC4444HMS8E-5#TRPBF equivalent, key selection criteria include its 150°C max junction temperature rating, 3ns–8ns switching times into 1nF loads, undervoltage lockout thresholds (3.55V rising / 3.20V falling), thermally enhanced MSOP-8 package with exposed pad, and dual independent input logic with internal level-shifting.
Technical Context
The LTC4444HMS8E-5#TRPBF implements a dual-output CMOS-input gate driver with separate TINP/BINP control signals, internal high-side level shifter referenced to TS, and adaptive shoot-through protection that monitors TS voltage transitions to sequence BG and TG activation. Its output stage uses bipolar pull-up transistors and N-MOSFET pull-down devices, delivering 0.75Ω low-side and 1.5Ω high-side pull-down resistance.
It integrates undervoltage lockout on VCC (3.55V/3.20V hysteresis), consumes only 320–520μA quiescent current, and features input thresholds (VIH = 2.75V, VIL = 2.30V) with 450mV hysteresis - ensuring noise immunity in high-dV/dt environments. The device is rated for –40°C to +150°C operating junction temperature and requires soldering of the exposed GND pad for θJA = 40°C/W thermal performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 4.5V to 13.5V - powers logic, input buffers, and low-side driver directly; enables compatibility with standard 5V/12V control rails. |
| BOOST–TS Max Voltage | 114V - supports high-side operation in 100V-input buck converters without external level-shifting circuitry. |
| TG Peak Pull-Up Current | 1.4A - reduces high-side MOSFET turn-on time, critical for minimizing conduction losses in high-QG FETs. |
| tf(BG) @ 1nF | 3ns - ensures rapid low-side turn-off to prevent cross-conduction during hard-switching transitions. |
| UVLO Threshold (Rising) | 3.55V - disables outputs if VCC sags below safe logic and drive voltage, protecting downstream MOSFETs from partial enhancement. |
| Junction Temp Range | –40°C to +150°C - qualified for under-hood automotive and industrial power module applications requiring extended thermal margin. |
| Package Thermal θJA | 40°C/W - achievable only when exposed pad (Pin 9) is soldered to PCB ground plane; failure to do so degrades thermal performance significantly. |
Pinout & Package
Package: 8-lead plastic MSOP (MS8E) with exposed GND pad (Pin 9), rated for –40°C to +150°C operation. Exposed pad must be soldered to PCB ground for thermal and electrical integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS input controlling TG output; VIH = 2.75V, VIL = 2.30V, 450mV hysteresis. |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS input controlling BG output; independent timing enables flexible PWM control schemes. |
| VCC (Pin 3) | Low-side supply rail | Powers input buffers, logic, and low-side driver; also feeds bootstrap diode to BOOST pin. |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; 0.75Ω pull-down resistance ensures fast turn-off into high-Ciss MOSFETs. |
| NC (Pin 5) | No connect | Not internally bonded; must remain unconnected per datasheet. |
| BOOST (Pin 6) | High-side bootstrapped supply | Connected via external capacitor to TS; voltage swing up to VCC + VIN − VF(diode), enabling >100V high-side drive. |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; 1.5Ω pull-down resistance minimizes shoot-through risk during switching transitions. |
| TS (Pin 8) | High-side MOSFET source node | Reference point for high-side output; connects to switch-node of synchronous buck; monitored for adaptive shoot-through protection. |
| GND (Pin 9) | Exposed thermal pad / ground | Must be soldered to PCB ground plane; provides primary thermal path and low-inductance return for high-speed switching currents. |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors TS voltage to delay BG turn-on until TS falls, eliminating cross-conduction without fixed dead-time programming. |
| 1.4A peak TG pull-up / 1.75A peak BG pull-up | Drives high-gate-charge MOSFETs at multi-MHz frequencies while maintaining low propagation delay (15–60ns). |
| 3ns BG fall time / 5ns TG fall time (1nF load) | Minimizes MOSFET transition time in linear region, directly reducing switching losses in high-efficiency power stages. |
| Undervoltage lockout with 450mV hysteresis | Prevents erratic output behavior during brown-out conditions; ensures clean enable/disable sequencing across wide temperature range. |
| Thermally enhanced MS8E package | Exposes die pad as GND terminal; achieves 40°C/W θJA when soldered - critical for sustained 150°C operation in compact layouts. |
Applications
| Automotive Power Supplies | Telecommunication Systems |
|---|---|
Use Scenario: 48V-to-12V buck converter in vehicle infotainment or ADAS ECU with 150°C ambient requirement. IC Role / Device Role / Timing Role: High-side/low-side gate driver enabling synchronous rectification with adaptive dead-time control. Use Value: Enables >95% efficiency at 500kHz switching while meeting AEC-Q100-relevant thermal stress limits via H-grade qualification. |
Use Scenario: Intermediate bus converter (36V–72V input) powering 48V/6A server PSUs in 19-inch rack systems. IC Role / Device Role / Timing Role: Dual N-MOSFET driver supporting high-frequency, high-voltage synchronous buck-boost topology. Use Value: Reduces gate drive losses by 30% vs. legacy drivers due to 1.75A BG pull-up and 3ns fall time into 1nF loads. |
| High Density Power Modules | Distributed Power Architectures |
Use Scenario: 10mm × 10mm isolated DC/DC module delivering 12V/10A with <1.5cm² footprint. IC Role / Device Role / Timing Role: Compact, thermally optimized gate driver enabling high-power density through efficient thermal coupling to PCB. Use Value: Exposed-pad MS8E package allows direct thermal transfer to inner-layer copper, sustaining 150°C junction temp without heatsink. |
Use Scenario: Point-of-load regulator in FPGA-based edge AI accelerator with dynamic load steps up to 10A/μs. IC Role / Device Role / Timing Role: Fast-propagation gate driver providing precise timing control for transient response-critical buck stages. Use Value: 15ns BG high-to-low propagation delay and 3ns fall time ensure minimal output voltage droop during rapid load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage synchronous N-MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4446 | No adaptive shoot-through protection; higher VCC min (6.6V); 3A peak BG pull-up vs. 1.75A. | Suitable where fixed dead-time or external timing control is acceptable; not recommended for high-noise automotive environments. | Select LTC4446 only if shoot-through protection is implemented externally and higher drive strength is needed at cost of reduced noise immunity. |
| LTC4444IMS8E-5#TRPBF | Same functionality and pinout, but rated for –40°C to +125°C (vs. +150°C for H-grade). | Valid for commercial/industrial ambient conditions; insufficient for under-hood or high-temperature power module use. | Choose LTC4444HMS8E-5#TRPBF when sustained operation above 125°C ambient is required - e.g., enclosed power modules or engine bay locations. |
Compared with LTC4446 and LTC4444IMS8E-5#TRPBF, the LTC4444HMS8E-5#TRPBF uniquely combines adaptive shoot-through protection, 150°C junction rating, and optimized 1.4A/1.75A drive strength - making it the only option qualified for high-reliability, high-temperature synchronous buck designs without external timing or thermal derating.
Availability
LTC4444HMS8E-5#TRPBF is available at Aetrix Electronics and suitable for automotive power supplies, telecommunication systems, and high-density power modules requiring stable component supply, long-term lifecycle support, and guaranteed H-grade thermal performance.
Supply support for LTC4444HMS8E-5#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains full product continuity, technical support, and manufacturing for all Linear power ICs including the LTC4444 family.
The LTC4444 series was designed specifically for high-efficiency, high-voltage synchronous DC/DC converters - emphasizing robust gate drive, adaptive timing control, and thermal resilience in space-constrained power systems.
FAQ
What is the maximum allowable voltage on the BOOST pin relative to TS for the LTC4444HMS8E-5#TRPBF?
The BOOST pin of the LTC4444HMS8E-5#TRPBF supports up to 114V above TS, enabling high-side operation in 100V-input buck converters. This rating is absolute - exceeding 114V risks permanent damage. The device's internal level shifter and adaptive shoot-through protection rely on this voltage headroom to maintain reliable high-side gate drive without external components.
Does the LTC4444HMS8E-5#TRPBF require external bootstrap diodes, and what specifications are critical?
Yes, the LTC4444HMS8E-5#TRPBF requires an external bootstrap diode between VCC (Pin 3) and BOOST (Pin 6). A Schottky diode with ≤0.4V forward voltage and ≥100mA average current rating is recommended. Low reverse leakage (<1μA) is critical to minimize BOOST voltage droop during high-duty-cycle operation, which directly impacts high-side drive strength and timing accuracy.
How does adaptive shoot-through protection work in the LTC4444HMS8E-5#TRPBF, and how is it different from fixed dead-time schemes?
The LTC4444HMS8E-5#TRPBF monitors the TS pin voltage to dynamically sequence BG and TG activation. If TS remains high after TINP turns off, BG is delayed by 150ns before turning on - eliminating cross-conduction without fixed dead-time penalties. Unlike fixed schemes, this adapts to MOSFET switching speed, layout parasitics, and temperature drift, improving efficiency across varying load and input conditions.
Can the LTC4444HMS8E-5#TRPBF drive both high-side and low-side MOSFETs in a half-bridge configuration with a single PWM signal?
No - the LTC4444HMS8E-5#TRPBF requires two independent input signals: TINP for TG (high-side) and BINP for BG (low-side). It does not include internal complementary logic or PWM-to-half-bridge translation. Using a single PWM signal would require external inverters or a controller with dedicated high/low outputs, as the device's adaptive shoot-through protection depends on asynchronous input control.
What is the purpose of the exposed pad (Pin 9) on the LTC4444HMS8E-5#TRPBF, and what happens if it is not soldered?
The exposed pad (Pin 9) on the LTC4444HMS8E-5#TRPBF serves as the primary thermal and electrical ground connection. If unsoldered, thermal resistance increases dramatically - from the specified 40°C/W to >100°C/W - causing junction temperature to exceed 150°C under moderate load, triggering thermal shutdown and risking long-term reliability failure. Soldering to a 2500mm² double-sided copper plane is mandatory for rated operation.
LTC4444HMS8E-5#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4444HMS8E-5#TRPBF FAQ
1.How can I place an order for LTC4444HMS8E-5#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4444HMS8E-5#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4444HMS8E-5#TRPBF reliable?
The price and inventory of LTC4444HMS8E-5#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444HMS8E-5#TRPBF is usually 5 days.
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5.How can I obtain technical support or documentation for LTC4444HMS8E-5#TRPBF?
For technical support, including LTC4444HMS8E-5#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444HMS8E-5#TRPBF requirements.
6.How does Aetrix verify that LTC4444HMS8E-5#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4444HMS8E-5#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444HMS8E-5#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4444HMS8E-5#TRPBF?
All LTC4444HMS8E-5#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444HMS8E-5#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4444HMS8E-5#TRPBF part is unused and in its original packaging.
Return procedure for LTC4444HMS8E-5#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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