My Inquiry
My Account
Analog Devices Inc. LTC4444HMS8E#TRPBF
- Part No.:
- LTC4444HMS8E#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4444HMS8E#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,522
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
LTC4444HMS8E#TRPBF from Analog Devices is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver designed for buck and buck-boost DC/DC converters. It drives both high-side (TG) and low-side (BG) N-MOSFETs with 2.5A peak TG pull-up, 3A peak BG pull-up, adaptive shoot-through protection, and operates with VCC from 7.2V to 13.5V and bootstrap voltage up to 114V above ground - enabling use in 100V-input telecom and automotive power supplies.
For engineers reviewing the LTC4444HMS8E#TRPBF datasheet, LTC4444HMS8E#TRPBF pinout, LTC4444HMS8E#TRPBF application, or LTC4444HMS8E#TRPBF equivalent, key selection criteria include its –40°C to 150°C junction temperature rating, 5ns TG fall time driving 1nF, 3ns BG fall time, undervoltage lockout thresholds (6.15V falling / 6.6V rising), and thermally enhanced MSOP-8 package with exposed GND pad.
Technical Context
The LTC4444HMS8E#TRPBF integrates dual independent input buffers with CMOS-compatible thresholds (VIH = 2.75V, VIL = 2.3V, 450mV hysteresis), internal level-shifting for high-side logic referenced to TS, and adaptive shoot-through protection that monitors TINP/BINP timing and TS voltage to prevent simultaneous conduction. Its output stage uses bipolar pull-up transistors and N-MOSFET pull-down devices with RDS(TG) = 1.2Ω and RDS(BG) = 0.55Ω.
It supports bootstrap operation with BOOST–TS up to 114V, features separate VCC-supplied low-side drive and bootstrapped high-side drive, and includes thermal shutdown at 160°C with recovery at 135°C. The device draws only 350µA quiescent current at VCC = 12V and exhibits propagation delays of 22–50ns across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 7.2V to 13.5V - powers logic, input buffers, and low-side driver directly; sets minimum gate overdrive for external MOSFETs |
| BOOST–TS Max Voltage | 114V - enables high-side drive in 100V-input converters without external level-shifters |
| TG Peak Pull-Up Current | 2.5A - ensures fast turn-on of high-Ciss N-MOSFETs in high-density power modules |
| BG Pull-Down Resistance | 0.55Ω - minimizes Miller-induced false turn-on during high-dV/dt switching transitions |
| UVLO Threshold Hysteresis | 450mV - prevents oscillation near trip point during brown-out conditions |
| Operating Junction Temp | –40°C to 150°C - qualified for under-hood automotive and industrial high-temp environments |
| TG Fall Time (1nF) | 5ns - reduces high-side MOSFET transition losses in >1MHz switching applications |
Pinout & Package
Package: 8-Lead Plastic MSOP (MS8E) with exposed GND pad (Pin 9), thermally enhanced for θJA = 40°C/W when soldered to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS input controlling TG output; VIH = 2.75V, VIL = 2.3V |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS input controlling BG output; same threshold specs as TINP |
| VCC (Pin 3) | Low-side supply rail | Powers input buffers, logic, and BG driver; also feeds bootstrap diode anode |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; delivers 3A peak pull-up and 0.55Ω pull-down |
| NC (Pin 5) | No connect | Not internally bonded; must remain unconnected |
| BOOST (Pin 6) | High-side bootstrapped supply | Connected via external capacitor to TS; voltage swing = VCC–VD to VIN+VCC–VD |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; delivers 2.5A peak pull-up and 1.2Ω pull-down |
| TS (Pin 8) | High-side MOSFET source node | Reference for TG output and bootstrap capacitor bottom; connects to switch node |
| GND (Pin 9, Exposed Pad) | Power and signal ground | Must be soldered to PCB ground plane for thermal performance and noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors TINP/BINP timing and TS voltage to disable TG if BG remains high, eliminating cross-conduction in synchronous buck stages |
| Thermally enhanced MSOP-8 | Exposed GND pad reduces θJA to 40°C/W when soldered - critical for sustained 150°C operation in sealed enclosures |
| Bootstrap supply tolerance | Supports BOOST–TS up to 114V - enables direct drive of high-side N-MOSFETs in 100V-input telecom PSUs |
| Fast, matched switching | 5ns TG fall / 3ns BG fall times (1nF load) ensure tight dead-time control and minimal overlap loss |
| Input hysteresis | 450mV VIH–VIL gap suppresses noise-induced false triggering in high-dV/dt automotive environments |
Applications
| Telecom Power Supply | Automotive DC/DC Converter |
|---|---|
Use Scenario: 48V–72V input telecom rectifier feeding 12V/48V intermediate bus with >1MHz switching. IC Role / Device Role / Timing Role: High-side/low-side gate driver for synchronous buck-boost controller (e.g., LTC3780), managing 100V transient surges. Use Value: 114V BOOST–TS rating and 150°C operation enable reliable duty-cycle extension during line surges without derating. |
Use Scenario: Under-hood 12V–48V bidirectional converter for 48V mild-hybrid systems with EMI-sensitive CAN/FlexRay interfaces. IC Role / Device Role / Timing Role: Gate driver for high-efficiency synchronous rectification in dual-phase buck converter, coordinated with MCU PWM. Use Value: Adaptive shoot-through protection and 450mV input hysteresis prevent shoot-through during engine cranking transients. |
| High-Density Power Module | Distributed Power Architecture |
Use Scenario: 1U server PSU with 3kW/in³ density requiring <10ns gate drive rise/fall for SiC MOSFETs. IC Role / Device Role / Timing Role: Dual-output gate driver interfacing with digital controller to minimize gate loop inductance and EMI. Use Value: 5ns/3ns fall times and 0.55Ω BG pull-down reduce switching losses by >12% vs. legacy drivers in 650V SiC designs. |
Use Scenario: Point-of-load regulator in industrial PLC backplane with 24V–60V input and strict thermal constraints. IC Role / Device Role / Timing Role: Synchronous buck driver supporting wide VCC range (7.2V–13.5V) and UVLO hysteresis for stable start-up across varying input rails. Use Value: 350µA quiescent current and thermal shutdown at 160°C ensure long-term reliability in fanless enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage synchronous gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4446IMS8E#TRPBF | No adaptive shoot-through protection; identical VCC/BOOST ratings and drive strength | Suitable where controller handles dead-time externally; not recommended for noisy automotive environments | Select when system-level timing control is available and cost optimization is prioritized |
| LTC4440IMS8E#TRPBF | Max 80V supply; 2.4A peak pull-up; no bootstrap level-shift - requires external high-side driver | Limited to ≤48V input systems; needs companion high-side level shifter for buck topologies | Choose for lower-voltage industrial supplies where 114V bootstrap capability is unnecessary |
Compared with LTC4444HMS8E#TRPBF, LTC4446 offers identical drive performance without shoot-through logic - reducing BOM count where timing is controller-managed - while LTC4440 trades 114V bootstrap support for lower cost and simpler layout in sub-48V applications.
Availability
LTC4444HMS8E#TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, automotive DC/DC converters, and high-density power modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for LTC4444HMS8E#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, communications, and automotive markets.
The LTC4444HMS8E#TRPBF belongs to Analog Devices' high-voltage power management IC family, engineered specifically for robust, high-efficiency synchronous rectification in demanding 100V-input power conversion systems.
FAQ
What is the maximum allowable BOOST–TS voltage for LTC4444HMS8E#TRPBF?
The absolute maximum BOOST–TS voltage for LTC4444HMS8E#TRPBF is 114V, as specified in the Absolute Maximum Ratings table. This allows safe operation with high-side N-MOSFETs in 100V-input buck converters where the switching node (TS) may reach near-input voltage during dead time. Exceeding 114V risks permanent damage to the internal high-side level-shifter and driver circuitry.
Does LTC4444HMS8E#TRPBF require external bootstrap diodes and capacitors?
Yes, LTC4444HMS8E#TRPBF requires an external bootstrap diode (anode to VCC, cathode to BOOST) and a ceramic capacitor (typically 100nF–1µF, X7R) between BOOST and TS pins. The diode must support ≥100V reverse voltage and ≥100mA peak forward current; the capacitor must be placed within 2mm of BOOST/TS pins to minimize loop inductance and ringing.
How does the adaptive shoot-through protection in LTC4444HMS8E#TRPBF operate?
LTC4444HMS8E#TRPBF's adaptive shoot-through protection monitors BINP and TS voltage simultaneously. If BINP is high (BG active) and TINP transitions high, TG is held off until BG goes low. If TS remains high after TINP turns off, BG is delayed by 150ns before activation - preventing both MOSFETs from conducting during switching transitions and eliminating cross-conduction losses.
What is the thermal resistance (θJA) of LTC4444HMS8E#TRPBF, and how is it achieved?
The specified θJA for LTC4444HMS8E#TRPBF is 40°C/W, achievable only when the exposed GND pad (Pin 9) is fully soldered to a 2500mm² double-sided 1oz copper ground plane. Failure to solder the pad results in θJA > 100°C/W, risking thermal shutdown at >100°C ambient - making proper PCB layout mandatory for 150°C junction operation.
Can LTC4444HMS8E#TRPBF drive SiC or GaN MOSFETs?
Yes, LTC4444HMS8E#TRPBF can drive SiC and GaN MOSFETs due to its 5ns TG fall time, 3ns BG fall time, 2.5A/3A peak pull-up currents, and low 0.55Ω/1.2Ω pull-down resistances - all critical for minimizing switching losses in wide-bandgap devices. However, gate resistor selection must account for higher dV/dt and ensure Miller clamping compliance per device datasheet.
LTC4444HMS8E#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4444HMS8E#TRPBF FAQ
1.How can I place an order for LTC4444HMS8E#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4444HMS8E#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4444HMS8E#TRPBF reliable?
The price and inventory of LTC4444HMS8E#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444HMS8E#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4444HMS8E#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4444HMS8E#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4444HMS8E#TRPBF?
LTC4444HMS8E#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4444HMS8E#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4444HMS8E#TRPBF?
For technical support, including LTC4444HMS8E#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444HMS8E#TRPBF requirements.
6.How does Aetrix verify that LTC4444HMS8E#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4444HMS8E#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444HMS8E#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4444HMS8E#TRPBF?
All LTC4444HMS8E#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444HMS8E#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4444HMS8E#TRPBF part is unused and in its original packaging.
Return procedure for LTC4444HMS8E#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LTC4444HMS8E#TRPBF Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
