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Analog Devices Inc. LTC4444IMS8E#PBF

Part No.:
LTC4444IMS8E#PBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixLTC4444IMS8E#PBF.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8MSOP
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Payment
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Product details

Overview

LTC4444IMS8E#PBF from Analog Devices is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver for buck and buck-boost DC/DC converters, supporting up to 100V input supply and 114V bootstrap voltage. It delivers 2.5A peak TG pull-up and 3A peak BG pull-up current with 5ns TG fall time (1nF load), enabling low-loss switching in high-density power modules used in telecom and automotive power supplies.

For engineers reviewing the LTC4444IMS8E#PBF datasheet, LTC4444IMS8E#PBF pinout, LTC4444IMS8E#PBF application, or LTC4444IMS8E#PBF equivalent, key selection criteria include adaptive shoot-through protection, –40°C to 125°C operating junction temperature, 1.2Ω TG pull-down resistance, and thermally enhanced MSOP-8 package with exposed GND pad.

Technical Context

The LTC4444IMS8E#PBF integrates dual independent CMOS-compatible inputs (TINP/BINP) with internal level-shifting for high-side control, where TINP drives TG referenced to TS and BINP drives BG referenced to GND. Its output stage uses bipolar pull-up transistors and MOSFET pull-down devices to achieve fast edge rates and strong sink capability.

Adaptive shoot-through protection monitors TS voltage and input timing to prevent simultaneous conduction; undervoltage lockout disables outputs when VCC drops below 6.15V. The device operates with VCC from 7.2V to 13.5V and supports bootstrapped high-side drive up to 114V above ground.

Key Specifications

ParameterValue and Actual Design Meaning
VCC Range7.2V to 13.5V - powers logic, input buffers, and low-side driver directly; sets gate overdrive for BG output
BOOST–TS Max114V - enables high-side N-MOSFET drive in 100V-input buck converters without external level shifters
TG Fall Time5ns (1nF load) - minimizes high-side MOSFET transition loss in high-frequency (>1MHz) power stages
BG Pull-Down RDS0.55Ω (typ) - ensures rapid low-side turn-off to suppress cross-conduction during TS node rise
UVLO Threshold6.15V (falling) - disables both drivers to prevent partial gate drive and MOSFET linear-mode operation
Operating Temp–40°C to 125°C - qualified for industrial and automotive power supply environments per AEC-Q100
Package8-Lead MSOP (MS8E) with exposed GND pad - θJA = 40°C/W when soldered to PCB; mandatory for thermal reliability

Pinout & Package

Package: 8-Lead Plastic MSOP (MS8E), 3mm × 3mm body, 0.65mm pitch, exposed GND pad (Pin 9) requiring PCB soldering for thermal performance (θJC = 10°C/W).

Pin/TerminalCircuit RoleDesign Meaning
TINP (Pin 1)High-side input signalGround-referenced CMOS input controlling TG output; VIH = 2.75V, VIL = 2.3V, 450mV hysteresis
BINP (Pin 2)Low-side input signalGround-referenced CMOS input controlling BG output; identical threshold specs as TINP
VCC (Pin 3)Low-side supply railPowers input buffers, logic, and BG driver; bypass capacitor required between VCC and GND (Pin 9)
BG (Pin 4)Low-side gate driver outputSwings between VCC and GND; drives gate of bottom N-MOSFET with 3A peak pull-up / 0.55Ω pull-down
NC (Pin 5)No connectNot internally bonded; must remain unconnected on PCB
BOOST (Pin 6)High-side bootstrapped supplyConnects to external bootstrap capacitor (to TS); voltage swing = VCC–VD to VIN+VCC–VD
TG (Pin 7)High-side gate driver outputSwings between BOOST and TS; drives gate of top N-MOSFET with 2.5A peak pull-up / 1.2Ω pull-down
TS (Pin 8)High-side MOSFET source nodeReference for TG output and bootstrap capacitor return; connects to switching node of power stage
GND (Pin 9)Power/ground referenceExposed thermal pad; must be soldered to PCB ground plane for thermal management and noise immunity

Key Features

FeatureDesign Value
Adaptive shoot-through protectionMonitors TS voltage and input timing to delay TG turn-on until BG fully turns off, eliminating cross-conduction
Bootstrap supply toleranceSupports BOOST–TS up to 114V, enabling use with 100V-input synchronous buck converters
Fast switching performance5ns TG fall time and 3ns BG fall time (1nF load) reduce MOSFET transition losses at >1MHz frequencies
Robust undervoltage lockoutDisables both outputs when VCC falls below 6.15V, preventing partial gate drive and MOSFET failure
Thermally enhanced packageMS8E with exposed GND pad achieves θJA = 40°C/W only when soldered - critical for 150°C max junction operation

Applications

Telecom Power ModulesAutomotive DC/DC Converters

Use Scenario: High-density 48V-to-12V buck converters in 5G base station power shelves requiring >95% efficiency at 500kHz switching.

IC Role / Device Role / Timing Role: Dual N-MOSFET gate driver synchronizing high- and low-side switches with adaptive dead-time control.

Use Value: 5ns TG fall time and 0.55Ω BG pull-down minimize conduction overlap loss, improving full-load efficiency by ~0.8% vs. legacy drivers.

Use Scenario: 12V/48V dual-battery systems in EVs needing isolated, AEC-Q100-compliant 3kW bidirectional DC/DC stages.

IC Role / Device Role / Timing Role: High-voltage gate driver enabling 100V-rated SiC MOSFETs in high-side position with 114V bootstrap margin.

Use Value: –40°C to 125°C guaranteed operation and UVLO ensure reliable startup and fault shutdown across vehicle thermal cycles.

Distributed Power ArchitecturesIndustrial Motor Drives

Use Scenario: Point-of-load regulators in factory automation PLCs supplying FPGA I/O banks with tight transient response.

IC Role / Device Role / Timing Role: Fast-turnoff driver reducing MOSFET Miller plateau time to maintain regulation during 10A/µs load steps.

Use Value: 3A BG pull-up and 2.5A TG pull-up deliver sufficient peak current to charge/discharge 2nF gate capacitance in <20ns.

Use Scenario: Sensorless BLDC motor inverters in HVAC compressors using 60V N-MOSFET half-bridges with >20kHz PWM.

IC Role / Device Role / Timing Role: Synchronous gate driver providing matched propagation delays (tPLH/tPHL ≤ 50ns) for precise phase alignment.

Use Value: 22ns TG high-to-low and 14ns BG high-to-low propagation delays enable <100ns minimum dead time without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage synchronous gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LTC4446IMS8E#PBFNo adaptive shoot-through protection; identical VCC range, 114V BOOST–TS, and 3A/2.5A drive strengthSuitable for fixed dead-time controllers where external timing logic prevents overlapSelect when system-level dead-time control is already implemented and shoot-through risk is managed externally
LTC4440IMS8E#PBFLower max supply (80V), higher VCC range (8V–15V), 2.4A peak pull-up, 1.5Ω pull-downTargeted at 48V industrial supplies; lacks 114V bootstrap headroom for 100V-input designsChoose for cost-sensitive 48V applications where 100V input headroom and ultra-low RDS are not required

Compared with LTC4446IMS8E#PBF, the LTC4444IMS8E#PBF adds adaptive shoot-through protection at no penalty in drive strength or thermal performance; versus LTC4440IMS8E#PBF, it extends input voltage capability to 100V while improving pull-down resistance by 63% for faster turn-off.

Availability

LTC4444IMS8E#PBF is available at Aetrix Electronics and suitable for telecom power modules, automotive DC/DC converters, and distributed power architectures requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for LTC4444IMS8E#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and power management markets.

The LTC4444IMS8E#PBF belongs to Analog Devices' high-voltage power management IC family, designed specifically for efficient, reliable gate driving in synchronous buck, buck-boost, and multiphase DC/DC converters operating up to 100V input.

FAQ

What is the maximum allowable voltage on the TS pin of the LTC4444IMS8E#PBF?

The TS pin of the LTC4444IMS8E#PBF has an absolute maximum rating of –5V to 100V. This allows direct connection to the switching node of high-input-voltage buck converters where TS swings from near-GND to VIN (up to 100V). Exceeding 100V risks permanent damage; proper layout and snubbing are recommended for fast-rising edges.

Does the LTC4444IMS8E#PBF require external bootstrap diodes, and what specifications are critical?

Yes, the LTC4444IMS8E#PBF requires an external bootstrap diode between VCC (Pin 3) and BOOST (Pin 6). A Schottky diode with ≤0.5V forward voltage, ≥100mA average current rating, and fast recovery (<20ns) is recommended. Low VF minimizes voltage drop across the diode, preserving BOOST–TS headroom for high-side drive.

How does the adaptive shoot-through protection in the LTC4444IMS8E#PBF differ from fixed dead-time schemes?

The LTC4444IMS8E#PBF's adaptive shoot-through protection monitors the TS voltage and input timing in real time: if BG remains high when TINP asserts, TG is delayed until BG falls; if TS stays high after TINP deasserts, BG is delayed by 150ns. This eliminates fixed dead-time guesswork and ensures minimal, safe overlap across load and temperature variations.

Can the LTC4444IMS8E#PBF drive GaN HEMTs, and what layout considerations apply?

Yes, the LTC4444IMS8E#PBF can drive enhancement-mode GaN HEMTs due to its fast 3–6ns rise/fall times and strong 2.5A/3A pull-up currents. Critical layout requirements include minimizing loop inductance on BOOST–TS and TG–TS paths, using short wide traces, placing bootstrap capacitor within 2mm of Pins 6/8, and ensuring solid GND plane connection to Pin 9 to suppress ringing.

What is the purpose of the NC pin (Pin 5) on the LTC4444IMS8E#PBF, and how should it be handled on the PCB?

Pin 5 (NC) on the LTC4444IMS8E#PBF is a no-connect terminal with no internal bond wire or circuit connection. It must remain unconnected on the PCB - neither routed nor tied to any net. Leaving it floating avoids unintended coupling; adding copper pour beneath it is acceptable if electrically isolated from other signals.

LTC4444IMS8E#PBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
7.2V ~ 13.5V
Logic Voltage - VIL, VIH:
1.85V, 3.25V
Current - Peak Output (Source, Sink):
2.5A, 3A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
114 V
Rise / Fall Time (Typ):
8ns, 5ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP-EP

LTC4444IMS8E#PBF FAQ

1.How can I place an order for LTC4444IMS8E#PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC4444IMS8E#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC4444IMS8E#PBF reliable?

The price and inventory of LTC4444IMS8E#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444IMS8E#PBF is usually 5 days.

3.What payment methods are accepted for LTC4444IMS8E#PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4444IMS8E#PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC4444IMS8E#PBF?

LTC4444IMS8E#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC4444IMS8E#PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC4444IMS8E#PBF?

For technical support, including LTC4444IMS8E#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444IMS8E#PBF requirements.

6.How does Aetrix verify that LTC4444IMS8E#PBF is sourced from the original manufacturer or authorized distributors?

All LTC4444IMS8E#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444IMS8E#PBF meets industry standards.

7.What is the process for return or replacement of LTC4444IMS8E#PBF?

All LTC4444IMS8E#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444IMS8E#PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC4444IMS8E#PBF part is unused and in its original packaging.

Return procedure for LTC4444IMS8E#PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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