Analog Devices Inc. LTC4444MPMS8E-5#PBF

Overview

LTC4444MPMS8E-5#PBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver optimized for buck and buck-boost DC/DC converters operating up to 100V input. It delivers 1.4A peak top-gate pull-up and 1.75A peak bottom-gate pull-up current, features adaptive shoot-through protection, and supports bootstrapped high-side operation up to 114V above ground. It enables efficient switching in automotive power supplies and high-density telecom modules.

For engineers reviewing the LTC4444MPMS8E-5#PBF datasheet, LTC4444MPMS8E-5#PBF pinout, LTC4444MPMS8E-5#PBF application, or LTC4444MPMS8E-5#PBF equivalent, key selection criteria include its –55°C to 150°C junction temperature rating, 5ns TG fall time driving 1nF, 0.75Ω BG pull-down resistance, and MS8E thermally enhanced 8-pin package with exposed GND pad.

Technical Context

The LTC4444MPMS8E-5#PBF integrates independent CMOS-compatible inputs (TINP/BINP) with internal level-shifting for high-side control, enabling direct interface with low-voltage controllers while driving high-side MOSFETs referenced to TS. Its adaptive shoot-through protection monitors TS voltage transitions and enforces non-overlapping gate drive timing to prevent simultaneous conduction.

It employs bipolar-NPN pull-up transistors and N-channel MOSFET pull-down devices on both outputs, delivering rail-to-rail swing: TG swings between BOOST and TS, BG between VCC and GND. Undervoltage lockout disables outputs when VCC drops below 3.55V, and thermal shutdown activates at 160°C junction temperature.

Key Specifications

Pinout & Package

Package: 8-Lead Plastic MSOP (MS8E) with exposed GND pad (Pin 9), rated for –55°C to 150°C operating junction temperature. Exposed pad must be soldered to PCB ground for thermal performance (θ_JA = 40°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage synchronous N-channel MOSFET driver applications.

Compared with LTC4446, the LTC4444MPMS8E-5#PBF adds adaptive shoot-through protection and wider temperature support but trades 1.6A higher peak pull-up for integrated safety. Versus LTC4444IMS8E-5#PBF, it extends operational reliability to harsher environments without sacrificing electrical performance.

Availability

LTC4444MPMS8E-5#PBF is available at Aetrix Electronics and suitable for automotive power supplies, telecommunication systems, and high-density power modules requiring stable component supply across extended temperature ranges and high-reliability operation.

Supply support for LTC4444MPMS8E-5#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Linear Technology in 2017 and maintains its precision analog and power management portfolio. Linear Technology was founded in 1981 and specialized in high-performance analog ICs for demanding applications.

The LTC4444MPMS8E-5#PBF belongs to Linear's high-voltage gate driver product line, designed specifically for synchronous N-MOSFET control in high-efficiency, high-input-voltage DC/DC converters used in automotive, telecom, and industrial power systems.

FAQ

What is the maximum allowable BOOST–TS voltage for the LTC4444MPMS8E-5#PBF?

The LTC4444MPMS8E-5#PBF supports a BOOST–TS voltage up to 114V, enabling high-side gate drive in buck converters with input voltages up to 100V. This rating is absolute maximum and must not be exceeded to avoid permanent device damage. Operation at 114V requires careful PCB layout to minimize parasitic inductance in the BOOST–TS loop.

How does adaptive shoot-through protection work in the LTC4444MPMS8E-5#PBF?

The LTC4444MPMS8E-5#PBF implements adaptive shoot-through protection by monitoring the TS pin voltage. If TS remains high after TINP turns off, BG is delayed for 150ns before activation. If TS falls first, BG turns on immediately. This dynamic response eliminates fixed dead-time compromises and prevents simultaneous conduction without external timing components.

Is the exposed pad (Pin 9) of the LTC4444MPMS8E-5#PBF electrically connected?

Yes - the exposed pad (Pin 9) of the LTC4444MPMS8E-5#PBF is internally connected to GND and must be soldered to a PCB ground plane. Failure to do so increases thermal resistance beyond 40°C/W, risking thermal shutdown under sustained 1.75A BG drive. The pad also serves as the primary ground return path for high-frequency switching currents.

What are the input voltage thresholds for TINP and BINP on the LTC4444MPMS8E-5#PBF?

The LTC4444MPMS8E-5#PBF has CMOS-compatible input thresholds: VIH = 2.75V (typical) and VIL = 2.3V (typical), with 450mV hysteresis. These thresholds are internally regulated and independent of V_CC variations, ensuring consistent logic-level compatibility with standard microcontrollers and PWM controllers across the full operating temperature range.

Can the LTC4444MPMS8E-5#PBF drive both high-side and low-side N-channel MOSFETs in a half-bridge configuration?

Yes - the LTC4444MPMS8E-5#PBF is explicitly designed for synchronous half-bridge operation: TG drives the high-side N-MOSFET gate referenced to TS, while BG drives the low-side N-MOSFET gate referenced to GND. Its level-shifted architecture, adaptive timing, and rail-to-rail output swing make it ideal for buck, boost, and buck-boost topologies requiring dual N-MOSFET control.