My Inquiry
My Account
Analog Devices Inc. LTC4444MPMS8E#PBF
- Part No.:
- LTC4444MPMS8E#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4444MPMS8E#PBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:991
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
LTC4444MPMS8E#PBF from Analog Devices is a high-frequency, high-voltage synchronous N-channel MOSFET gate driver designed for buck and buck-boost DC/DC converters. It drives both high-side (TG) and low-side (BG) N-MOSFETs with supply voltages up to 100V, features adaptive shoot-through protection, 1.2Ω TG pull-down resistance, and operates across –55°C to 150°C junction temperature. It enables high-efficiency power conversion in automotive and industrial 48V–72V input systems.
For engineers reviewing the LTC4444MPMS8E#PBF datasheet, LTC4444MPMS8E#PBF pinout, LTC4444MPMS8E#PBF application, or LTC4444MPMS8E#PBF equivalent, key selection criteria include bootstrap voltage capability (up to 114V), undervoltage lockout thresholds (6.15V/6.6V), thermal grade (MP-grade, –55°C to 150°C), and dual independent input logic with level-shifted high-side control.
Technical Context
The LTC4444MPMS8E#PBF implements a CMOS-compatible dual-input architecture with internal level-shifting for the high-side driver, enabling ground-referenced PWM signals to control a high-side MOSFET referenced to TS (switching node). Its adaptive shoot-through protection monitors TINP/BINP timing and TS voltage transitions to prevent simultaneous conduction - critical for maintaining efficiency in synchronous rectification.
It integrates separate high-current pull-up (2.5A TG / 3A BG) and low-resistance pull-down stages (1.2Ω TG / 0.55Ω BG), delivering fast switching (5ns TG fall, 3ns BG fall into 1nF) while sustaining robust drive under high dv/dt conditions. The device draws only 350–550µA quiescent current at VCC and includes thermal shutdown at 160°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 7.2V to 13.5V - powers logic, input buffers, and low-side driver directly; sets gate overdrive for low-side MOSFET. |
| BOOST–TS Max | 114V - enables high-side gate drive in topologies where TS swings up to 100V above ground. |
| TG Pull-Down RDS | 1.2Ω typical - ensures rapid turn-off of high-side MOSFET despite Miller capacitance coupling during fast TS transients. |
| UVLO Thresholds | 6.15V (falling), 6.6V (rising), 450mV hysteresis - prevents erratic operation during brown-out or startup sequencing. |
| Operating Temp | –55°C to 150°C junction - validated MP-grade rating for under-hood automotive and high-reliability industrial use. |
| tg/tf (1nF load) | 5ns TG fall / 3ns BG fall - minimizes MOSFET transition time in linear region, directly reducing switching losses. |
| Input Thresholds | VIH = 2.75V, VIL = 2.3V - CMOS-compatible, supply-independent inputs reduce need for external level-shifting circuitry. |
Pinout & Package
Package: 8-Lead Plastic MSOP (MS8E) with exposed GND pad (Pin 9), thermally enhanced for θJA = 40°C/W when soldered to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced logic input controlling TG output; internally level-shifted to BOOST domain. |
| BINP (Pin 2) | Low-side input signal | Ground-referenced logic input controlling BG output; independent of high-side timing path. |
| VCC (Pin 3) | Low-side supply rail | Powers input buffers, logic, and low-side driver; also feeds bootstrap diode anode for high-side supply generation. |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; delivers up to 3A peak pull-up and 100mA sink current into MOSFET gate. |
| NC (Pin 5) | No connect | Unbonded pin; must remain unconnected per datasheet. |
| BOOST (Pin 6) | High-side bootstrapped supply | Connects to external bootstrap capacitor; voltage swing = VCC – VD to VIN + VCC – VD (VD = diode forward drop). |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; drives high-side MOSFET gate with 2.5A peak pull-up and 100mA sink. |
| TS (Pin 8) | High-side MOSFET source node | Reference point for TG output and bootstrap capacitor bottom; connects directly to source of high-side N-MOSFET. |
| GND (Pin 9) | Power and signal ground | Exposed thermal pad; must be soldered to PCB ground plane to achieve specified thermal performance and EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors TINP/BINP timing and TS voltage to dynamically delay TG turn-on until BG fully turns off - eliminates cross-conduction without fixed dead-time programming. |
| Bootstrap supply tolerance | Supports BOOST–TS up to 114V - enables reliable high-side drive in 48V/60V/72V automotive and telecom input applications. |
| Thermally rugged MP-grade | Guaranteed operation from –55°C to 150°C junction - qualified for engine compartment and industrial ambient extremes. |
| Fast, matched switching | 5ns TG fall / 3ns BG fall into 1nF - reduces overlap loss and improves light-load efficiency in high-frequency (>500kHz) converters. |
| Supply-independent inputs | VIH/VIL stable across full VCC range (7.2V–13.5V) - simplifies interface with diverse controller ICs without external biasing. |
Applications
| Automotive 48V DC/DC Converter | Industrial High-Density Power Module |
|---|---|
Use Scenario: Step-down conversion from 48V battery rail to 12V/5V for ADAS sensors and infotainment. IC Role / Device Role / Timing Role: Synchronous gate driver controlling high-side and low-side N-MOSFETs in a buck topology; provides precise timing coordination and shoot-through immunity under load transients. Use Value: Enables >95% efficiency at 500kHz switching with MP-grade thermal reliability for under-hood deployment. | Use Scenario: Compact 1U server PSU delivering 48V output from 380V DC bus using interleaved buck-boost stages. IC Role / Device Role / Timing Role: Dual-output gate driver managing parallel high-voltage N-MOSFETs; leverages 114V BOOST capability and fast rise/fall times for high-frequency operation. Use Value: Reduces gate drive losses by 30% vs. legacy drivers, supporting >100W/in³ power density with minimal heatsinking. |
| Telecom 72V Input Buck-Boost | Distributed Power Architecture (DPA) |
Use Scenario: Telecom rectifier module converting –48V or 72V input to isolated 12V outputs for base station RF amplifiers. IC Role / Device Role / Timing Role: High-voltage gate driver for synchronous rectification in non-isolated buck-boost stage; handles 100V absolute max TS voltage during transient surges. Use Value: Maintains stable UVLO and shoot-through protection across wide input range, improving system uptime in harsh AC grid environments. | Use Scenario: Point-of-load converter on motherboard supplying 1.8V/60A to FPGA core from 12V intermediate bus. IC Role / Device Role / Timing Role: Low-latency gate driver with 22ns TG propagation delay and 14ns BG delay - enables tight phase alignment in multiphase DPA designs. Use Value: Delivers sub-10ns timing skew between phases, reducing output ripple and allowing smaller bulk capacitors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage synchronous gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4446EMS8E#PBF | No adaptive shoot-through protection; identical VCC/BOOST ratings and drive strength. | Suitable for fixed dead-time controllers or discrete timing circuits where shoot-through is managed externally. | Select when system-level timing control exists and cost sensitivity outweighs integrated protection. |
| LTC4440IMS8E#PBF | Max 80V TS rating; higher VCC range (8V–15V); lower peak pull-up (2.4A); no MP-grade temp support. | Targeted at industrial 24V–48V supplies where 100V headroom is unnecessary and extended temperature is not required. | Choose for cost-optimized 48V systems with standard industrial temp range (–40°C to 125°C). |
Compared with LTC4446 and LTC4440, the LTC4444MPMS8E#PBF uniquely combines 100V TS rating, adaptive shoot-through protection, and MP-grade temperature validation - making it the only option qualified for automotive under-hood synchronous buck converters requiring zero cross-conduction risk and extreme thermal resilience.
Availability
LTC4444MPMS8E#PBF is available at Aetrix Electronics and suitable for automotive power supplies, high-density power modules, and telecommunications infrastructure requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for LTC4444MPMS8E#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and automotive markets.
The LTC4444 product line delivers high-voltage, high-speed gate drivers optimized for synchronous DC/DC conversion in demanding environments - emphasizing robustness, timing accuracy, and thermal resilience for next-generation power systems.
FAQ
What is the maximum allowable TS voltage for LTC4444MPMS8E#PBF?
The LTC4444MPMS8E#PBF supports a maximum TS voltage of 100V (absolute maximum rating), enabling its use in high-input-voltage buck converters such as 48V-to-12V automotive systems. This rating is maintained across the full –55°C to 150°C operating junction temperature range, consistent with its MP-grade qualification. Exceeding 100V at TS risks permanent damage per Absolute Maximum Ratings.
Does LTC4444MPMS8E#PBF require external bootstrap diode and capacitor?
Yes, the LTC4444MPMS8E#PBF requires an external bootstrap diode (anode to VCC, cathode to BOOST) and capacitor (between BOOST and TS) to generate the high-side floating supply. The datasheet specifies a typical 100nF ceramic capacitor and recommends low-forward-drop Schottky diodes. Omitting either component prevents proper high-side gate drive and may cause latch-up or failure.
How does adaptive shoot-through protection work in LTC4444MPMS8E#PBF?
The LTC4444MPMS8E#PBF implements adaptive shoot-through protection by monitoring BINP state and TS voltage. If BG remains high when TINP asserts, TG turn-on is delayed until BG falls. If TS stays high after TINP deasserts, BG turn-on is delayed 150ns. This dynamic response eliminates fixed dead-time compromises and prevents cross-conduction under varying load and layout conditions - a key differentiator versus non-adaptive drivers like LTC4446.
Is LTC4444MPMS8E#PBF AEC-Q100 qualified?
Yes, the LTC4444MPMS8E#PBF is AEC-Q100 qualified for automotive applications (Grade 1, –40°C to 125°C ambient, equivalent to –55°C to 150°C junction). This qualification covers stress testing for temperature cycling, humidity, ESD, and package reliability - confirming suitability for safety-critical vehicle subsystems including 48V mild-hybrid power conversion.
What thermal design considerations apply to LTC4444MPMS8E#PBF?
Proper thermal design for LTC4444MPMS8E#PBF requires soldering the exposed GND pad (Pin 9) to a minimum 2500mm² double-sided 1oz copper ground plane to achieve θJA = 40°C/W. Failure to do so raises thermal resistance significantly, risking junction temperatures exceeding 150°C under 2.5A peak drive. Layout must also minimize VCC/BOOST loop inductance and separate power/ground return paths to suppress ringing.
LTC4444MPMS8E#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4444MPMS8E#PBF FAQ
1.How can I place an order for LTC4444MPMS8E#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4444MPMS8E#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4444MPMS8E#PBF reliable?
The price and inventory of LTC4444MPMS8E#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4444MPMS8E#PBF is usually 5 days.
3.What payment methods are accepted for LTC4444MPMS8E#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4444MPMS8E#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4444MPMS8E#PBF?
LTC4444MPMS8E#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4444MPMS8E#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4444MPMS8E#PBF?
For technical support, including LTC4444MPMS8E#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4444MPMS8E#PBF requirements.
6.How does Aetrix verify that LTC4444MPMS8E#PBF is sourced from the original manufacturer or authorized distributors?
All LTC4444MPMS8E#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4444MPMS8E#PBF meets industry standards.
7.What is the process for return or replacement of LTC4444MPMS8E#PBF?
All LTC4444MPMS8E#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4444MPMS8E#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4444MPMS8E#PBF part is unused and in its original packaging.
Return procedure for LTC4444MPMS8E#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LTC4444MPMS8E#PBF Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
