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Analog Devices Inc. LTC4446EMS8E#PBF
- Part No.:
- LTC4446EMS8E#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4446EMS8E#PBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:750
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Product details
Overview
LTC4446EMS8E#PBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage dual N-channel MOSFET gate driver optimized for synchronous buck, two-switch forward, and full-bridge DC/DC converters. It delivers 2.5A peak pull-up and 1.2Ω pull-down on the high-side (TG) output, and 3A peak pull-up and 0.55Ω pull-down on the low-side (BG) output, supporting up to 100V input rails and bootstrapped high-side operation up to 114V above ground. It drives external power MOSFETs in automotive power supplies and high-density telecom modules.
For engineers reviewing the LTC4446EMS8E#PBF datasheet, LTC4446EMS8E#PBF pinout, LTC4446EMS8E#PBF application, or LTC4446EMS8E#PBF equivalent, key selection criteria include bootstrap-compatible high-side drive capability, independent dual-input logic control, undervoltage lockout thresholds (6.15V/6.6V), thermal performance in the MS8E package, and absence of adaptive shoot-through protection.
Technical Context
The LTC4446EMS8E#PBF integrates two independent CMOS-compatible input buffers with 450mV hysteresis and supply-independent thresholds (VIH = 2.75V, VIL = 2.3V), enabling robust noise immunity in high-dV/dt environments. Its high-side level shifter operates across a BOOST–TS voltage range up to 114V, while the low-side driver connects directly to VCC (7.2V–13.5V).
The output stage uses bipolar NPN transistors for pull-up (Q1/Q2) and N-channel MOSFETs for pull-down (M1/M2), delivering fast switching: 5ns TG fall time and 3ns BG fall time into 1nF loads. Undervoltage lockout disables both outputs when VCC drops below 6.15V, and internal thermal shutdown activates at 160°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 7.2V to 13.5V - powers low-side driver and input logic; determines gate overdrive for bottom MOSFET. |
| BOOST–TS Max Voltage | 114V - sets maximum allowable high-side floating supply swing, critical for 100V-input topologies. |
| TG Peak Pull-Up Current | 2.5A (typ) - enables rapid charging of high-Ciss MOSFET gates, reducing turn-on losses in high-power stages. |
| BG Pull-Down Resistance | 0.55Ω (typ) - ensures strong gate discharge to prevent cross-conduction during high-frequency transitions. |
| tPHL(BG) | 14ns to 30ns - defines minimum dead-time margin required between BG turn-off and TG turn-on in synchronous designs. |
| UVLO Threshold (falling) | 6.15V - guarantees safe shutdown before VCC drops below minimum gate drive voltage for reliable MOSFET control. |
| Operating Temperature | –40°C to +85°C - validated for industrial and automotive under-hood power supply applications. |
Pinout & Package
The LTC4446EMS8E#PBF is housed in an 8-lead MSOP package with exposed thermal pad (Pin 9), requiring soldering to PCB ground for θJA = 40°C/W thermal performance. The MS8E package supports high-power density layouts with minimal footprint (3.0mm × 3.0mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS logic input controlling TG output; VIH = 2.75V, VIL = 2.3V. |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS logic input controlling BG output; independent timing from TINP. |
| VCC (Pin 3) | Low-side supply rail | Powers input buffers, logic, and BG driver; also feeds bootstrap diode for BOOST supply. |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; drives source of low-side N-MOSFET. |
| NC (Pin 5) | No connect | Internally unconnected; must remain floating or grounded per layout best practice. |
| BOOST (Pin 6) | High-side bootstrapped supply | Connects to external capacitor and bootstrap diode; supplies TG driver at up to 114V above TS. |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; drives gate of high-side N-MOSFET referenced to switching node. |
| TS (Pin 8) | High-side MOSFET source | Reference node for high-side output; connects directly to source of top N-MOSFET. |
| GND (Pin 9) | Exposed thermal pad / ground | Mandatory PCB ground connection for thermal management and signal integrity; not optional. |
Key Features
| Feature | Design Value |
|---|---|
| Independent dual-input logic | Enables asymmetric PWM control and flexible dead-time insertion without external logic. |
| Bootstrap-compatible high-side drive | Supports high-side operation up to 114V above ground, eliminating need for isolated supplies in buck-derived topologies. |
| Strong low-side pull-down (0.55Ω) | Prevents false turn-on of low-side MOSFET due to CGD coupling during high-dV/dt transitions at TS node. |
| Supply-independent input thresholds | VIH/VIL remain stable across full VCC range (7.2V–13.5V), simplifying controller interface design. |
| Integrated UVLO with hysteresis | 6.15V/6.6V thresholds with 450mV hysteresis ensure clean, bounce-free disable/re-enable during brownout conditions. |
Applications
| Automotive Power Supplies | Telecommunication Systems |
|---|---|
Use Scenario: 48V battery-fed DC/DC converter supplying 12V to infotainment and ADAS ECUs in vehicles with load dump transients up to 100V. IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling synchronous N-MOSFETs in a two-switch forward topology with bootstrap high-side biasing. Use Value: 114V BOOST–TS rating withstands ISO 7637-2 pulse 5a transients; 3A BG pull-up ensures fast turn-on of low-side FETs under cold-crank low-VCC conditions. |
Use Scenario: 48V intermediate bus converter delivering 12V/35A to line cards in telecom base stations with strict efficiency and thermal constraints. IC Role / Device Role / Timing Role: Dual gate driver in full-bridge configuration driving Si7852DP MOSFETs, synchronized to LTC3722 controller. Use Value: 5ns TG fall time and 3ns BG fall time minimize switching losses at 200kHz+ frequencies; MS8E thermal pad enables >3W dissipation in compact 1U chassis. |
| High Density Power Modules | Distributed Power Architectures |
Use Scenario: 36V–72V input, 12V/35A isolated full-bridge supply in modular server PSUs where board space is constrained and thermal management is critical. IC Role / Device Role / Timing Role: Gate driver paired with LTC3722EGN-1 controller, managing four Si7852DP power stages in phase-shifted full-bridge mode. Use Value: Exposed pad (Pin 9) soldered to 2-layer 1oz copper reduces θJA to 40°C/W, enabling continuous operation at 85°C ambient without forced air. |
Use Scenario: Point-of-load (POL) converter in data center rack systems requiring stable 12V distribution across multiple blade servers with varying load profiles. IC Role / Device Role / Timing Role: High-speed gate driver in synchronous buck regulator feeding FPGA or ASIC core rails, driven by external PWM controller. Use Value: 2.5A TG pull-up current reduces gate charge time for high-Qg MOSFETs, maintaining <100ns propagation delay matching (±10ns) for precise timing control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual N-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4444IMS8E#PBF | Includes adaptive shoot-through protection; identical 2.5A/3A peak drive and 100V absolute max ratings. | Suitable for designs requiring automatic dead-time adjustment to prevent cross-conduction under variable load or temperature. | Select LTC4444IMS8E#PBF when shoot-through risk exists due to controller timing uncertainty or layout parasitics. |
| LTC4442IMS8E#PBF | Higher 5A peak output current; narrower 6V–9.5V VCC range; lower 38V max input voltage rating. | Optimized for lower-input-voltage, higher-current applications like 12V/48V intermediate bus converters. | Choose LTC4442IMS8E#PBF only if VIN ≤ 38V and peak gate current >3A is required; not suitable for 100V systems. |
Compared with LTC4446EMS8E#PBF, LTC4444IMS8E#PBF adds shoot-through protection at the cost of slightly higher quiescent current, while LTC4442IMS8E#PBF trades input voltage headroom for higher drive strength-making LTC4446EMS8E#PBF the optimal choice for 100V-input, bootstrap-based topologies without adaptive timing needs.
Availability
LTC4446EMS8E#PBF is available at Aetrix Electronics and suitable for automotive power supplies, telecommunication systems, and high-density power modules requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature grade (–40°C to +85°C).
Supply support for LTC4446EMS8E#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains full technical and manufacturing continuity for all Linear power products, including robust process control and AEC-Q100-aligned test protocols for automotive-grade variants.
The LTC4446EMS8E#PBF belongs to Linear's high-voltage gate driver product line, designed specifically for efficient, high-frequency control of N-channel MOSFETs in isolated and non-isolated DC/DC converters operating up to 100V input.
FAQ
What is the maximum allowable BOOST–TS voltage for the LTC4446EMS8E#PBF?
The LTC4446EMS8E#PBF supports a BOOST–TS voltage up to 114V, enabling high-side operation in 100V-input DC/DC converters with margin for transient overvoltage. This rating is specified in the Absolute Maximum Ratings table and verified across temperature; exceeding it risks permanent damage. The device's internal level shifter and high-side driver circuitry are designed to operate reliably within this limit under all valid VCC and load conditions.
Does the LTC4446EMS8E#PBF include adaptive shoot-through protection?
No, the LTC4446EMS8E#PBF does not include adaptive shoot-through protection. As explicitly stated in the datasheet's FEATURES section and confirmed in the PARAMETER comparison table, shoot-through protection is "No" for LTC4446. Designers must implement external dead-time control via the PWM controller or discrete logic to prevent simultaneous conduction of high-side and low-side MOSFETs.
What is the purpose of the exposed pad (Pin 9) on the LTC4446EMS8E#PBF MS8E package?
The exposed pad (Pin 9) on the LTC4446EMS8E#PBF is electrically and thermally connected to GND and must be soldered to a PCB ground plane. Per datasheet Note 4, failure to do so results in thermal resistance far exceeding the specified θJA = 40°C/W. Proper soldering to ≥2500 mm² of 1oz copper reduces junction-to-ambient rise and prevents thermal shutdown during sustained 3A peak output currents.
How does the LTC4446EMS8E#PBF handle undervoltage conditions on the VCC supply?
The LTC4446EMS8E#PBF incorporates an undervoltage lockout (UVLO) circuit that disables both TG and BG outputs when VCC falls below 6.15V (falling threshold). Outputs are pulled low-TG to TS and BG to GND-ensuring external MOSFETs remain off. Normal operation resumes only after VCC rises above 6.6V (rising threshold), with 450mV hysteresis preventing oscillation near the threshold.
Can the LTC4446EMS8E#PBF drive both high-side and low-side N-channel MOSFETs in a synchronous buck converter?
Yes, the LTC4446EMS8E#PBF is explicitly designed for this role. Its high-side driver (TG) operates referenced to TS and powered by BOOST, enabling direct drive of N-MOSFETs in the high-side position using bootstrap biasing. The low-side driver (BG) connects directly to VCC and GND, driving the low-side N-MOSFET source-to-ground. This dual-drive capability is confirmed in the DESCRIPTION, FEATURES, and TYPICAL APPLICATION sections.
LTC4446EMS8E#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4446EMS8E#PBF FAQ
1.How can I place an order for LTC4446EMS8E#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4446EMS8E#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4446EMS8E#PBF reliable?
The price and inventory of LTC4446EMS8E#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4446EMS8E#PBF is usually 5 days.
3.What payment methods are accepted for LTC4446EMS8E#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4446EMS8E#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4446EMS8E#PBF?
LTC4446EMS8E#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4446EMS8E#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4446EMS8E#PBF?
For technical support, including LTC4446EMS8E#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4446EMS8E#PBF requirements.
6.How does Aetrix verify that LTC4446EMS8E#PBF is sourced from the original manufacturer or authorized distributors?
All LTC4446EMS8E#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4446EMS8E#PBF meets industry standards.
7.What is the process for return or replacement of LTC4446EMS8E#PBF?
All LTC4446EMS8E#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4446EMS8E#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4446EMS8E#PBF part is unused and in its original packaging.
Return procedure for LTC4446EMS8E#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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