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Analog Devices Inc. LTC4446EMS8E#TRPBF
- Part No.:
- LTC4446EMS8E#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4446EMS8E#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,893
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Product details
Overview
LTC4446EMS8E#TRPBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage dual N-channel MOSFET gate driver for synchronous buck and full-bridge DC/DC converters. It delivers 2.5A peak pull-up current on the high-side (TG) and 3A on the low-side (BG), with pull-down resistances of 1.2Ω and 0.55Ω respectively, enabling fast switching of high-capacitance MOSFETs in power supplies up to 100V input. It operates with VCC from 7.2V to 13.5V and supports bootstrapped high-side supply up to 114V above ground.
For engineers reviewing the LTC4446EMS8E#TRPBF datasheet, LTC4446EMS8E#TRPBF pinout, LTC4446EMS8E#TRPBF application, or LTC4446EMS8E#TRPBF equivalent, key selection criteria include high-side level-shifting capability, independent dual-input logic control, undervoltage lockout thresholds (6.15V/6.6V), nanosecond-scale propagation delays (e.g., tPHL(TG) ≤ 40ns), and thermal performance in the MS8E package with exposed pad grounding.
Technical Context
The LTC4446EMS8E#TRPBF integrates two independent CMOS-compatible input buffers with 450mV hysteresis and supply-independent thresholds (VIH = 2.75V, VIL = 2.3V), allowing robust noise immunity in high-dV/dt environments. Its high-side driver uses internal level-shifting to interface with bootstrap-supplied TG output swinging between TS and BOOST, while the low-side BG output swings between GND and VCC.
Output stage architecture employs bipolar NPN transistors for pull-up and N-channel MOSFETs for pull-down, delivering strong drive into capacitive loads - achieving 5ns TG fall time and 3ns BG fall time with 1nF load at 12V supply. Undervoltage lockout disables both outputs when VCC drops below 6.15V, ensuring safe MOSFET turn-off during brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 7.2V to 13.5V - sets minimum gate overdrive voltage for reliable low-side MOSFET turn-on and defines UVLO activation threshold. |
| TG Peak Pull-Up Current | 2.5A typical - enables rapid charging of high-Qg MOSFET gates, reducing conduction time in high-current synchronous rectifiers. |
| BG Pull-Down Resistance | 0.55Ω typical - ensures fast discharge of low-side gate capacitance, minimizing cross-conduction risk during dead-time transitions. |
| tPHL(TG) | 22–40ns - guarantees consistent high-side turn-off timing critical for ZVS/ZCS control in phase-shifted full-bridge topologies. |
| BOOST–TS Max Voltage | 114V - supports high-input-voltage isolated converters (e.g., 36–72V telecom systems) using bootstrap-based high-side biasing. |
| UVLO Hysteresis | 450mV - prevents oscillatory output behavior near supply dropout by separating rising-edge enable (6.6V) and falling-edge disable (6.15V) points. |
| Operating Temp | –40°C to +85°C - validated for industrial and automotive under-hood power module applications without derating. |
Pinout & Package
The LTC4446EMS8E#TRPBF is housed in an 8-lead MSOP package (MS8E) with exposed thermal pad (Pin 9) that must be soldered to PCB ground for θJA = 40°C/W thermal performance. Package dimensions comply with LTC DWG #05-08-1662 Rev D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS logic input controlling TG output; VIH/VIL thresholds independent of VCC variation. |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS logic input controlling BG output; fully independent from TINP for asymmetric PWM control. |
| VCC (Pin 3) | Low-side supply & logic rail | Powers input buffers, logic, and BG driver directly; also feeds bootstrap diode to BOOST pin. |
| BG (Pin 4) | Low-side gate driver output | Swings between GND and VCC; drives gate of bottom N-MOSFET in half-bridge or synchronous buck stage. |
| NC (Pin 5) | No connect | Internally unconnected; no external connection required. |
| BOOST (Pin 6) | High-side bootstrap supply | Connects to external capacitor between BOOST and TS; supplies floating rail for TG driver stage. |
| TG (Pin 7) | High-side gate driver output | Swings between TS and BOOST; drives gate of top N-MOSFET referenced to switching node. |
| TS (Pin 8) | High-side source reference | Direct connection to source of high-side MOSFET; serves as local ground reference for TG output stage. |
| GND (Pin 9) | Exposed thermal pad / system ground | Must be soldered to PCB ground plane to achieve specified thermal resistance and EMI suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Independent dual-input logic | Enables asymmetric PWM control and dead-time insertion via external controller, avoiding internal shoot-through without adaptive protection. |
| 114V bootstrap capability | Supports high-input-voltage topologies (e.g., 72V telecom) without requiring isolated bias supplies or charge pumps. |
| Sub-10ns output fall times | Reduces MOSFET transition losses in high-frequency (>500kHz) converters, improving efficiency in compact power modules. |
| Thermally enhanced MS8E | Exposed pad reduces junction-to-board thermal resistance to 10°C/W (θJC), enabling >3W dissipation in standard 2-layer PCB layouts. |
| Supply-independent input thresholds | Maintains consistent VIH/VIL across VCC range, eliminating need for level shifters when interfacing with 3.3V or 5V controllers. |
Applications
| Telecom DC/DC Converters | Automotive Power Modules |
|---|---|
Use Scenario: 36V–72V input isolated full-bridge converter delivering 12V/35A for base station RF amplifiers. IC Role / Device Role / Timing Role: Dual gate driver synchronizing Si7852DP MOSFETs in primary-side switching stage; provides precise timing matching (tDM ≤ ±35ns) for ZVS operation. Use Value: 3A BG pull-up and 0.55Ω pull-down minimize body-diode conduction loss during dead time, increasing efficiency by ≥1.2% at full load. |
Use Scenario: 48V–60V battery-fed bidirectional DC/DC for 12V subsystems in electric vehicle power distribution units. IC Role / Device Role / Timing Role: High-side level-shifted driver for top N-MOSFET in synchronous buck; withstands 100V transient surges per ISO 7637-2. Use Value: 114V BOOST–TS rating eliminates need for external high-voltage bias ICs, reducing BOM count and layout area by 30%. |
| Industrial Motor Drives | High-Density Power Supplies |
Use Scenario: 24V–48V input half-bridge gate driver for BLDC inverter stages in servo drives. IC Role / Device Role / Timing Role: Controls discrete N-channel MOSFETs with Qg > 100nC; leverages 2.5A TG pull-up to achieve <100ns turn-on delay. Use Value: 5ns TG fall time suppresses shoot-through during fast commutation, reducing I²R losses in motor windings by 8% at 20kHz PWM. |
Use Scenario: 12V-output, 1MHz synchronous buck in server VRM with 30A output and <1mm height constraint. IC Role / Device Role / Timing Role: Compact MS8E package with exposed pad enables direct thermal coupling to heatsink-laminated PCB layers. Use Value: 40°C/W θJA allows continuous 2.5W dissipation at 70°C ambient, supporting >95% efficiency without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual N-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4444IMS8E#TRPBF | Includes adaptive shoot-through protection; lower peak currents (3A/2.5A vs 3A/2.5A); identical VCC/BOOST ranges. | Preferred where controller lacks precise dead-time control; adds ~150ps propagation delay penalty. | Select LTC4444IMS8E#TRPBF if shoot-through prevention is prioritized over minimal propagation delay. |
| LTC4442IMS8E#TRPBF | Higher peak current (5A/5A); narrower VCC range (6V–9.5V); max input supply limited to 38V. | Suitable only for ≤40V input systems; requires external LDO for 12V VCC rail in higher-input designs. | Choose LTC4442IMS8E#TRPBF only for low-input-voltage, ultra-high-current gate drive needs (Qg > 150nC). |
Compared with LTC4444IMS8E#TRPBF and LTC4442IMS8E#TRPBF, the LTC4446EMS8E#TRPBF offers optimal balance of 100V input compatibility, nanosecond timing precision, and thermal robustness - making it ideal for telecom and industrial converters where bootstrap reliability and timing accuracy outweigh integrated shoot-through mitigation.
Availability
LTC4446EMS8E#TRPBF is available at Aetrix Electronics and suitable for telecom DC/DC converters, automotive power modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for LTC4446EMS8E#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog and power management portfolio with rigorous qualification standards for industrial and automotive applications.
The LTC4446EMS8E#TRPBF belongs to Linear's high-voltage gate driver product line, engineered specifically for efficient, reliable control of N-channel MOSFETs in isolated and non-isolated DC/DC topologies operating up to 100V input.
FAQ
What is the maximum allowable voltage on the BOOST pin relative to TS for LTC4446EMS8E#TRPBF?
The absolute maximum BOOST–TS voltage for LTC4446EMS8E#TRPBF is 114V, as specified in the Absolute Maximum Ratings table. This rating enables use in high-input-voltage applications such as 72V telecom systems when paired with appropriate external bootstrap capacitor and diode ratings. Exceeding this voltage risks permanent damage to the internal high-side driver stage.
Does LTC4446EMS8E#TRPBF include built-in shoot-through protection?
No, LTC4446EMS8E#TRPBF does not include adaptive shoot-through protection. The datasheet explicitly states "The LTC4446 does not have adaptive shoot-through protection." Dead-time management must be handled externally by the PWM controller. For designs requiring integrated protection, consider LTC4444IMS8E#TRPBF as an alternative.
What is the recommended PCB layout practice for the exposed pad of LTC4446EMS8E#TRPBF?
The exposed pad (Pin 9) of LTC4446EMS8E#TRPBF must be soldered to a dedicated PCB ground plane with ≥2500 mm² copper area to achieve the specified θJA = 40°C/W. Failure to do so increases thermal resistance significantly - potentially exceeding 100°C/W - leading to premature thermal shutdown or reduced lifetime. Use the recommended solder pad layout from LTC DWG #05-08-1662 Rev D.
Can LTC4446EMS8E#TRPBF drive both high-side and low-side N-channel MOSFETs in a synchronous buck converter?
Yes, LTC4446EMS8E#TRPBF is specifically designed to drive both high-side and low-side N-channel MOSFETs in synchronous buck, half-bridge, and full-bridge topologies. Its TG output swings referenced to TS (high-side source), while BG swings referenced to GND, enabling full N-MOSFET implementation without P-channel devices or level-shifting circuitry.
What are the undervoltage lockout (UVLO) thresholds for LTC4446EMS8E#TRPBF?
LTC4446EMS8E#TRPBF features a VCC UVLO with rising threshold of 6.6V and falling threshold of 6.15V, providing 450mV hysteresis. When VCC falls below 6.15V, both TG and BG outputs are actively pulled low (to TS and GND respectively), ensuring safe turn-off of external MOSFETs during brownout conditions.
LTC4446EMS8E#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4446EMS8E#TRPBF FAQ
1.How can I place an order for LTC4446EMS8E#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4446EMS8E#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4446EMS8E#TRPBF reliable?
The price and inventory of LTC4446EMS8E#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4446EMS8E#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4446EMS8E#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4446EMS8E#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4446EMS8E#TRPBF?
LTC4446EMS8E#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4446EMS8E#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4446EMS8E#TRPBF?
For technical support, including LTC4446EMS8E#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4446EMS8E#TRPBF requirements.
6.How does Aetrix verify that LTC4446EMS8E#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4446EMS8E#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4446EMS8E#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4446EMS8E#TRPBF?
All LTC4446EMS8E#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4446EMS8E#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4446EMS8E#TRPBF part is unused and in its original packaging.
Return procedure for LTC4446EMS8E#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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