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Analog Devices Inc. LTC4446IMS8E#PBF
- Part No.:
- LTC4446IMS8E#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC4446IMS8E#PBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:522
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Product details
Overview
LTC4446IMS8E#PBF from Analog Devices (formerly Linear Technology) is a high-frequency, high-voltage dual N-channel MOSFET gate driver optimized for synchronous buck, two-switch forward, and full-bridge DC/DC converters. It delivers 2.5A peak pull-up and 1.2Ω pull-down on the high-side (TG) output, and 3A peak pull-up and 0.55Ω pull-down on the low-side (BG) output, operating with VCC from 7.2V to 13.5V and bootstrap supply up to 114V above ground. It drives external power MOSFETs in automotive power supplies and high-density telecom modules.
For engineers reviewing the LTC4446IMS8E#PBF datasheet, LTC4446IMS8E#PBF pinout, LTC4446IMS8E#PBF application, or LTC4446IMS8E#PBF equivalent, key selection criteria include its 100V absolute max TS rating, absence of adaptive shoot-through protection, thermally enhanced MSOP-8 package with exposed GND pad, and independent level-shifted inputs enabling robust high-side control in isolated topologies.
Technical Context
The LTC4446IMS8E#PBF implements separate CMOS-compatible input buffers for TINP (high-side) and BINP (low-side), each with 450mV hysteresis and thresholds independent of VCC (VIH = 2.75V, VIL = 2.3V). Its high-side driver uses internal level-shifting to operate with BOOST–TS up to 114V, while the low-side driver connects directly to VCC and GND.
Output stage architecture employs bipolar NPN transistors for pull-up (Q1/Q2) and N-channel MOSFETs for pull-down (M1/M2), delivering fast switching: 5ns TG fall time and 3ns BG fall time into 1nF loads at 12V supply. Undervoltage lockout disables both outputs when VCC drops below 6.15V, ensuring safe MOSFET turn-off during brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 7.2V to 13.5V - sets minimum gate overdrive for logic-level N-MOSFETs and defines LDO input range for internal biasing |
| BOOST–TS Max Voltage | 114V - enables high-side operation in 100V-input systems with margin for transient spikes |
| TG Peak Pull-Up Current | 2.5A - reduces high-side MOSFET turn-on time and conduction losses in high-Ciss devices |
| BG Pull-Down Resistance | 0.55Ω - ensures rapid low-side MOSFET turn-off, minimizing cross-conduction risk during dead-time transitions |
| tPHL(TG) Propagation Delay | 22ns to 40ns - supports >1MHz switching frequencies in high-efficiency power stages |
| UVLO Threshold Hysteresis | 450mV - prevents oscillatory output behavior near VCC dropout boundary |
| Thermal Resistance θJA | 40°C/W - achievable only with soldered exposed pad to ≥2500 mm² copper area; critical for 125°C junction limit |
Pinout & Package
The LTC4446IMS8E#PBF is housed in an 8-lead MSOP package (MS8E) with exposed thermal pad (Pin 9 = GND), requiring PCB soldering for thermal performance. Package dimensions: 3.00mm × 3.00mm × 0.86mm, 0.65mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TINP (Pin 1) | High-side input signal | Ground-referenced CMOS input controlling TG output; level-shifted internally to BOOST domain |
| BINP (Pin 2) | Low-side input signal | Ground-referenced CMOS input controlling BG output; independent timing path from TINP |
| VCC (Pin 3) | Low-side supply and logic rail | Powers input buffers, logic, and BG driver; also feeds bootstrap diode anode for TG drive |
| BG (Pin 4) | Low-side gate driver output | Swings between VCC and GND; drives source of low-side N-MOSFET |
| NC (Pin 5) | No connect | Internally unconnected; must remain floating or grounded per layout best practice |
| BOOST (Pin 6) | High-side bootstrapped supply | Connects to external capacitor and bootstrap diode; voltage referenced to TS, not GND |
| TG (Pin 7) | High-side gate driver output | Swings between BOOST and TS; drives gate of high-side N-MOSFET referenced to switching node |
| TS (Pin 8) | High-side MOSFET source connection | Return path for TG output; ties to drain of low-side MOSFET and inductor node in buck topology |
| Exposed Pad (Pin 9) | Thermal ground | Mandatory GND connection; primary heat dissipation path-failure to solder degrades θJA severely |
Key Features
| Feature | Design Value |
|---|---|
| Independent level-shifted inputs | Enables true ground-referenced PWM control of high-side switch without external level translators or optocouplers |
| Asymmetric driver strength | 3A BG pull-up + 0.55Ω pull-down prioritizes fast low-side turn-off to suppress shoot-through in hard-switched topologies |
| Input threshold hysteresis | 450mV eliminates false triggering from noise coupling into TINP/BINP traces in high-dV/dt environments |
| Integrated UVLO with hysteresis | Prevents partial gate drive during undervoltage events-forces both MOSFETs fully off until VCC recovers to 6.6V |
| Exposed thermal pad packaging | Reduces junction-to-ambient thermal resistance to 40°C/W when soldered to ≥2500 mm² copper, enabling 1.5W continuous dissipation |
Applications
| Distributed Power Architectures | Automotive Power Supplies |
|---|---|
Use Scenario: Intermediate bus conversion in server rack PDUs using 48V input to generate 12V intermediate rails. IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling synchronous rectification in two-switch forward converter stage. Use Value: 114V BOOST–TS rating accommodates 48V bus transients; 2.5A/3A peak currents reduce switching losses in 100A+ output designs. |
Use Scenario: 12V/24V battery-powered ADAS ECU supplying 3.3V/5V rails via high-efficiency buck converter. IC Role / Device Role / Timing Role: Dual N-MOSFET driver in compact synchronous buck regulator powering radar processor and sensor interface. Use Value: –40°C to 85°C guaranteed operation matches automotive under-hood requirements; low quiescent current (350μA) extends cold-cranking runtime. |
| High Density Power Modules | Telecommunication Systems |
Use Scenario: 1U AC/DC front-end with isolated full-bridge DC/DC stage delivering 12V/35A to baseband processing units. IC Role / Device Role / Timing Role: Gate driver for Si7852DP power MOSFETs in LLC resonant half-bridge secondary side synchronous rectification. Use Value: 5ns/3ns fall times minimize dead-time losses; MS8E package footprint saves >30% board area vs SOIC-8 alternatives. |
Use Scenario: 36V–72V telecom rectifier feeding 48V backplane with hot-swap and OR-ing functionality. IC Role / Device Role / Timing Role: High-side driver for N-MOSFET OR-ing FETs in redundant power feed architecture. Use Value: 100V absolute max TS rating withstands load-dump transients; independent TINP/BINP allows precise timing control for zero-voltage switching sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual N-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4444IMS8E#PBF | Includes adaptive shoot-through protection; identical 2.5A/3A drive strength and 100V TS rating | Required where dynamic dead-time adjustment is needed to prevent cross-conduction in variable-frequency or resonant topologies | Select LTC4444IMS8E#PBF if shoot-through immunity is mandatory; LTC4446IMS8E#PBF offers lower propagation delay (22ns vs 25ns tPHL) for fixed-frequency hard-switched designs |
| LTC4442IMS8E#PBF | Higher 5A peak output current but limited to 38V max TS; no bootstrap capability for high-side drive | Suitable only for low-voltage half-bridge or low-side-only configurations where TS ≤ 38V | Choose LTC4442IMS8E#PBF for cost-sensitive 12V/24V systems needing higher peak current; LTC4446IMS8E#PBF remains necessary for >38V high-side operation |
Compared with LTC4444IMS8E#PBF, the LTC4446IMS8E#PBF trades adaptive shoot-through protection for faster propagation delay and simpler timing control-ideal for fixed-frequency synchronous buck converters. Versus LTC4442IMS8E#PBF, it sacrifices peak current for 114V bootstrap capability, making it the only option among the three for 48V+ telecom and automotive high-side gate drive.
Availability
LTC4446IMS8E#PBF is available at Aetrix Electronics and suitable for distributed power architectures, automotive power supplies, and high-density power modules requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for LTC4446IMS8E#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its legacy high-performance analog IC portfolio, including precision power management solutions for demanding industrial and automotive applications.
The LTC4446IMS8E#PBF belongs to Linear's high-voltage gate driver product line, designed specifically for efficient, reliable control of N-channel MOSFETs in isolated and non-isolated DC/DC converters operating up to 100V input.
FAQ
What is the maximum allowable voltage on the TS pin of the LTC4446IMS8E#PBF?
The TS pin of the LTC4446IMS8E#PBF has an absolute maximum rating of 100V relative to GND. This rating enables use in 48V and 72V telecom and industrial power systems where switching-node transients may exceed nominal input voltage. Operation beyond this limit risks permanent damage to the internal level-shifter and high-side driver circuitry.
Does the LTC4446IMS8E#PBF provide adaptive shoot-through protection?
No, the LTC4446IMS8E#PBF does not include adaptive shoot-through protection. Unlike the LTC4444IMS8E#PBF, it relies on externally controlled dead-time insertion between TINP and BINP signals. This design simplifies timing control in fixed-frequency applications but requires careful PCB layout and controller coordination to avoid cross-conduction.
How should the exposed thermal pad (Pin 9) of the LTC4446IMS8E#PBF be connected?
The exposed thermal pad (Pin 9) of the LTC4446IMS8E#PBF must be soldered directly to a solid GND plane on the PCB. Per Linear's datasheet, failure to do so increases θJA beyond 40°C/W, risking thermal shutdown or reduced lifetime. Recommended layout uses ≥2500 mm² copper area with multiple thermal vias to inner-layer GND planes.
What is the purpose of the NC pin (Pin 5) on the LTC4446IMS8E#PBF?
Pin 5 of the LTC4446IMS8E#PBF is a no-connect terminal with no internal connection. It must remain unconnected-neither tied to GND nor routed-to avoid parasitic coupling or mechanical stress on the bond wire. Leaving it floating is the only recommended configuration per Linear's package documentation.
Can the LTC4446IMS8E#PBF drive both high-side and low-side N-MOSFETs in a synchronous buck converter?
Yes, the LTC4446IMS8E#PBF is explicitly designed for synchronous buck topologies: TG drives the high-side N-MOSFET gate referenced to the switching node (TS), while BG drives the low-side N-MOSFET gate referenced to GND. Its bootstrap architecture and independent inputs enable full control of both switches without external level shifters.
LTC4446IMS8E#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:
- 1.85V, 3.25V
- Current - Peak Output (Source, Sink):
- 2.5A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 8ns, 5ns
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP-EP
LTC4446IMS8E#PBF FAQ
1.How can I place an order for LTC4446IMS8E#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4446IMS8E#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4446IMS8E#PBF reliable?
The price and inventory of LTC4446IMS8E#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4446IMS8E#PBF is usually 5 days.
3.What payment methods are accepted for LTC4446IMS8E#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4446IMS8E#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4446IMS8E#PBF?
LTC4446IMS8E#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4446IMS8E#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4446IMS8E#PBF?
For technical support, including LTC4446IMS8E#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4446IMS8E#PBF requirements.
6.How does Aetrix verify that LTC4446IMS8E#PBF is sourced from the original manufacturer or authorized distributors?
All LTC4446IMS8E#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4446IMS8E#PBF meets industry standards.
7.What is the process for return or replacement of LTC4446IMS8E#PBF?
All LTC4446IMS8E#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4446IMS8E#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4446IMS8E#PBF part is unused and in its original packaging.
Return procedure for LTC4446IMS8E#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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