Analog Devices Inc. LTC4449IDCB#TRPBF
- Part No.:
- LTC4449IDCB#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
LTC4449IDCB#TRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8DFN
- Quantity:
- Payment:

- Shipping:

Inventory:3,781
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
LTC4449IDCB#TRPBF from Analog Devices (formerly Linear Technology) is a high-frequency dual N-channel MOSFET gate driver IC designed for synchronous buck converters. It delivers 3.2A peak pull-up and 4.5A peak pull-down current, achieves 8ns TG rise time and 7ns TG fall time into 3000pF, operates with 4V–6.5V VCC supply, and integrates adaptive shoot-through protection and undervoltage lockout. It drives high-side and low-side MOSFETs in high-density power modules.
For engineers reviewing the LTC4449IDCB#TRPBF datasheet, LTC4449IDCB#TRPBF pinout, LTC4449IDCB#TRPBF application, or LTC4449IDCB#TRPBF equivalent, key selection considerations include its rail-to-rail output swing, separate VLOGIC supply for controller-level signal matching, bootstrap-based high-side drive architecture, and thermal performance in the 2mm × 3mm DFN package.
Technical Context
The LTC4449IDCB#TRPBF implements a three-state input stage with VLOGIC-referenced thresholds (VIH/VIL), enabling seamless interfacing with PWM controllers operating at 3.3V or 5V logic levels. Its internal level shifter translates IN signals to the bootstrapped high-side domain up to 42V above TS.
It features dual independent output stages: TG uses an NPN/P-MOS parallel pull-up and N-MOS pull-down to deliver 3.2A pull-up/2.4A pull-down into the high-side MOSFET gate; BG employs an enhanced NPN+N-MOS pull-down delivering 4.5A peak sink current. Adaptive shoot-through protection actively monitors TS voltage transitions to enforce non-overlapping gate drive timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 4V to 6.5V - powers low-side driver directly and high-side driver via external bootstrap diode; ensures compatibility with common controller VDD rails. |
| Peak Pull-Down Current (BG) | 4.5A - enables sub-4ns fall time into 3nF loads, minimizing cross-conduction risk during high dv/dt switching events. |
| TG Rise/Fall Time (3nF) | 8ns / 7ns - reduces MOSFET transition losses in high-frequency (>600kHz) synchronous buck topologies. |
| Input Threshold Hysteresis | ≥100mV - suppresses false triggering from noise coupling on IN pin during fast switch-node transients. |
| UVLO Thresholds | VLOGIC: 2.65V (falling), VCC: 3.04V (falling) - guarantees clean shutdown of both MOSFETs before logic/driver supplies become unreliable. |
| Max BOOST Voltage | 42V above TS - supports high-input-voltage synchronous buck stages up to 38V VIN with sufficient gate overdrive margin. |
| Junction Temp Range | –40°C to +125°C - rated for industrial and automotive under-hood power module applications requiring extended thermal operation. |
Pinout & Package
Package: 8-lead (2mm × 3mm) plastic DFN with exposed thermal pad (Pin 9 = GND). Height: 0.75mm. Requires soldering of exposed pad to PCB ground plane for thermal and electrical integrity (θJA = 64°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TG (Pin 1) | High-side gate driver output | Swings between TS and BOOST; drives top N-MOSFET gate with rail-to-rail voltage capability up to 42V above TS. |
| TS (Pin 2) | High-side source reference node | Connects to source of high-side MOSFET; serves as return path for TG output and bootstrap capacitor bottom plate. |
| BG (Pin 3) | Low-side gate driver output | Swings between VCC and GND; delivers 4.5A peak sink current for rapid low-side turn-off and cross-conduction immunity. |
| GND (Pins 4 & 9) | Chip ground / thermal pad | Pins 4 and 9 are internally connected; exposed pad must be soldered to PCB ground for optimal thermal dissipation and noise immunity. |
| IN (Pin 5) | Three-state logic input | Accepts ground-referenced PWM signal; floats to internal shutdown state if un-driven, forcing both BG and TG low. |
| VLOGIC (Pin 6) | Logic supply input | Powers input buffer and threshold circuitry; sets VIH/VIL proportional to supply (3V–6.5V), enabling direct match to controller I/O voltage. |
| VCC (Pin 7) | Driver supply input | Powers low-side driver directly and charges bootstrap capacitor via external Schottky diode to BOOST pin. |
| BOOST (Pin 8) | High-side bootstrap supply | Connected to TS via external capacitor; voltage swings from VCC–VD to VIN+VCC–VD, enabling high-side gate drive above VIN. |
Key Features
| Feature | Design Value |
|---|---|
| Rail-to-rail output swing | Enables full VGS overdrive on both high-side (up to BOOST–TS) and low-side (up to VCC–GND) MOSFETs, minimizing RDS(ON) conduction loss. |
| Adaptive shoot-through protection | Monitors TS voltage slew rate and delays BG turn-on until TG is fully off, eliminating cross-conduction without fixed dead-time programming. |
| Separate VLOGIC supply | Allows input thresholds to track controller supply voltage (3.3V or 5V), eliminating level-shifter components and reducing BOM count. |
| Undervoltage lockout (dual) | Independent UVLO on VLOGIC and VCC ensures both logic and driver stages shut down cleanly when either supply drops below safe operating margin. |
| Thermally optimized DFN | 2mm × 3mm footprint with soldered exposed pad delivers 64°C/W junction-to-ambient thermal resistance for high-power density layouts. |
Applications
| High-Density Power Modules | Synchronous Buck Converters |
|---|---|
Use Scenario: Compact 12V–48V input, 1.2V/50A output DC/DC module for AI accelerators and telecom baseband units. IC Role / Device Role / Timing Role: Dual N-MOSFET gate driver providing synchronized, non-overlapping high-speed switching control with adaptive dead-time management. Use Value: Enables >95% efficiency at 600kHz switching frequency by minimizing MOSFET transition losses and eliminating shoot-through current. |
Use Scenario: Two-phase 1.2V/50A VRM for server CPUs using LTC3860 controller and discrete power stages. IC Role / Device Role / Timing Role: High-current gate driver translating PWM signals into robust gate voltages for paralleled HAT2160H/HAT2167H MOSFETs. Use Value: Delivers 4.5A BG pull-down to suppress Miller-induced turn-on during high dv/dt transitions, ensuring stable multi-phase current sharing. |
| Distributed Power Architectures | Industrial Motor Drives |
Use Scenario: Point-of-load (POL) converter in factory automation PLC backplane supplying 3.3V/10A to FPGA I/O banks. IC Role / Device Role / Timing Role: Synchronous rectifier driver managing high-side/low-side gate timing with integrated UVLO for brown-out resilience. Use Value: Maintains regulated output during line sags by holding both MOSFETs off until VLOGIC and VCC recover above UVLO thresholds. |
Use Scenario: Half-bridge gate driver in 24V BLDC motor control stage for robotic joint actuators. IC Role / Device Role / Timing Role: High-speed N-MOSFET driver supporting 100kHz PWM with precise timing control and bootstrap-based high-side biasing. Use Value: Achieves <7ns TG fall time to reduce switching losses in thermally constrained motor drive enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous N-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LTC4442IDCB#TRPBF | Lower VCC range (6V–9.5V), lower peak pull-up (2.4A), no adaptive shoot-through (fixed delay) | Targeted at lower-frequency (<300kHz) buck converters where gate charge is smaller and timing margins are looser | Select when VCC ≥6V is available and shoot-through risk is mitigated by external timing control |
| LTC4444IDDB#TRPBF | Higher VIN support (up to 100V), higher VCC range (4.5V–13.5V), lower BG pull-down (0.55Ω typical vs 4.5A peak) | Designed for high-input-voltage isolated forward/flyback topologies requiring robust high-side drive beyond 42V | Select for >42V boost voltage requirements or when driving high-threshold MOSFETs needing >13.5V gate drive |
Compared with LTC4442IDCB#TRPBF and LTC4444IDDB#TRPBF, the LTC4449IDCB#TRPBF offers superior high-frequency performance (8ns/7ns switching), higher peak current drive (4.5A BG), and adaptive shoot-through protection-making it optimal for compact, high-efficiency synchronous buck designs operating at 400–1000kHz with tight thermal constraints.
Availability
LTC4449IDCB#TRPBF is available at Aetrix Electronics and suitable for high-density power modules, synchronous buck converters, distributed power architectures, and industrial motor drives requiring stable component supply across extended temperature ranges.
Supply support for LTC4449IDCB#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its high-performance analog and power management portfolio. Linear pioneered precision analog ICs and remains a leader in high-efficiency power conversion solutions.
The LTC4449IDCB#TRPBF belongs to Linear's high-speed gate driver product line, engineered specifically for high-frequency synchronous DC/DC converters demanding minimal propagation delay, aggressive current drive, and robust shoot-through immunity in space-constrained industrial and computing power systems.
FAQ
What is the maximum allowable voltage on the BOOST pin of the LTC4449IDCB#TRPBF?
The BOOST pin of the LTC4449IDCB#TRPBF supports a maximum voltage of 42V above the TS pin. This rating enables reliable high-side gate drive in synchronous buck converters with input voltages up to 38V while maintaining sufficient gate overdrive margin. Exceeding this differential voltage risks permanent damage to the internal high-side driver stage.
Does the LTC4449IDCB#TRPBF require external bootstrap diodes and capacitors?
Yes, the LTC4449IDCB#TRPBF requires an external Schottky diode between VCC and BOOST pins, and an external capacitor between BOOST and TS pins. These components form the bootstrap network that generates the floating supply needed to drive the high-side MOSFET gate above the switch-node voltage. The datasheet recommends low-forward-voltage Schottky diodes and low-ESR ceramic capacitors placed adjacent to the IC.
How does the three-state input of the LTC4449IDCB#TRPBF improve system reliability?
The three-state input of the LTC4449IDCB#TRPBF interprets high-impedance (floating) IN signals as a shutdown command, pulling both BG and TG low. This prevents unintended MOSFET conduction during controller power-up/down sequences or fault conditions, enhancing safety in systems where the PWM controller may enter reset or high-Z states. It eliminates need for external pull-down resistors or enable logic.
Can the LTC4449IDCB#TRPBF drive MOSFETs with gate charges exceeding 100nC?
Yes, the LTC4449IDCB#TRPBF can drive high-QG MOSFETs: its 4.5A peak BG pull-down and 3.2A peak TG pull-up currents enable fast switching even with gate charges up to ~150nC at 500kHz. However, gate loop inductance and PCB layout must be minimized to preserve rise/fall time performance; for QG >120nC, verify thermal dissipation using the PQG = 2 × VCC × QG × fIN formula.
What is the purpose of the exposed thermal pad (Pin 9) on the LTC4449IDCB#TRPBF DFN package?
The exposed thermal pad (Pin 9) on the LTC4449IDCB#TRPBF is electrically and thermally connected to internal GND. It must be soldered to a dedicated PCB copper pour tied to system ground to achieve the specified θJA = 64°C/W thermal resistance. Omitting this connection degrades thermal performance significantly-potentially raising junction temperature by >40°C under full load-and compromises noise immunity in high-speed switching environments.
LTC4449IDCB#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4V ~ 6.5V
- Logic Voltage - VIL, VIH:
- 3V, 6.5V
- Current - Peak Output (Source, Sink):
- 3.2A, 4.5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 42 V
- Rise / Fall Time (Typ):
- 8ns, 7ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (2x3)
LTC4449IDCB#TRPBF FAQ
1.How can I place an order for LTC4449IDCB#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC4449IDCB#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC4449IDCB#TRPBF reliable?
The price and inventory of LTC4449IDCB#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC4449IDCB#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC4449IDCB#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC4449IDCB#TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC4449IDCB#TRPBF?
LTC4449IDCB#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC4449IDCB#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC4449IDCB#TRPBF?
For technical support, including LTC4449IDCB#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC4449IDCB#TRPBF requirements.
6.How does Aetrix verify that LTC4449IDCB#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC4449IDCB#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC4449IDCB#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC4449IDCB#TRPBF?
All LTC4449IDCB#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC4449IDCB#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC4449IDCB#TRPBF part is unused and in its original packaging.
Return procedure for LTC4449IDCB#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LTC4449IDCB#TRPBF Tags

-
ZXGD3009E6TA
Diodes Incorporated

-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments

-
MCP1416T-E/OT
Microchip Technology

-
MCP1402T-E/OT
Microchip Technology

-
MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

