Analog Devices Inc. LTC7001JMSE#TRPBF

Overview

LTC7001JMSE#TRPBF from Analog Devices is a fast 150V high-side N-channel MOSFET gate driver IC with internal charge pump, enabling 100% duty cycle operation. It operates from input voltages up to 135V (150V abs max), features 1Ω pull-down and 2.2Ω pull-up drivers, and delivers 35ns propagation delay - ideal for static switch, load switching, and electronic valve control in industrial and automotive power systems.

For engineers reviewing the LTC7001JMSE#TRPBF datasheet, LTC7001JMSE#TRPBF pinout, LTC7001JMSE#TRPBF application, or LTC7001JMSE#TRPBF equivalent, this page provides verified technical context, validated pin functions, confirmed thermal specs (–40°C to 150°C junction), real-world slew rate adjustability, and precise OVLO/VCCUV configuration guidance - all specific to the J-grade MSOP-10 variant.

Technical Context

The LTC7001JMSE#TRPBF integrates a high-voltage level shifter and charge pump that regulates BST–TS to 12V, enabling indefinite conduction of external high-side NMOS switches. Its dual-output architecture separates TGUP (pull-up to BST) and TGDN (pull-down to TS), allowing independent control of turn-on slew rate via external series resistance while maintaining fast, robust turn-off.

It implements three independent undervoltage lockouts: VCCUV-configurable (3.5V–10.5V rising threshold), BST–TS floating UVLO (3.1V typical), and OVLO (1.16V–1.26V rising threshold), all pulling TGDN to TS to disable the external FET. The device is AEC-Q100 qualified and rated for 150°C maximum junction temperature.

Key Specifications

Pinout & Package

Package: 10-lead plastic MSOP (MSE) with exposed thermal pad (Pin 11 = GND), θJA = 45°C/W, θJC = 10°C/W. Exposed pad must be soldered to PCB ground plane for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side NMOS gate driver applications.

Compared with LM5109BMM/NOPB and MAX15062AATA+, the LTC7001JMSE#TRPBF uniquely combines 135V operation, internal charge pump for 100% duty cycle, 35ns timing, and AEC-Q100 qualification - making it the only option for robust, high-voltage, automotive-grade static switching without design compromises.

Availability

LTC7001JMSE#TRPBF is available at Aetrix Electronics and suitable for industrial power sequencing, automotive load switching, electronic valve control, and high-frequency gate driving requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.

Supply support for LTC7001JMSE#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving industrial, automotive, communications, and healthcare markets.

The LTC7001 product line delivers high-voltage, high-reliability gate drivers optimized for static and dynamic high-side NMOS switching in demanding environments - emphasizing robustness, precision protection, and simplified layout.

FAQ

What is the maximum allowable voltage on the TS pin of the LTC7001JMSE#TRPBF?

The TS pin of the LTC7001JMSE#TRPBF has an absolute maximum rating of –6V to +150V. This allows direct connection to high-side MOSFET sources operating up to 135V nominal, while tolerating negative transients (e.g., inductive flyback) down to –6V. Operation beyond these limits risks permanent damage. The LTC7001JMSE#TRPBF's internal level shifter and protection circuits are designed specifically for this voltage range.

How does the internal charge pump in the LTC7001JMSE#TRPBF enable 100% duty cycle operation?

The LTC7001JMSE#TRPBF's internal charge pump actively regulates the BST–TS voltage to 12V, independent of TS potential - even when TS rises to 135V. This sustained gate drive voltage ensures the external NMOS remains fully enhanced indefinitely, eliminating the duty-cycle limitation inherent in passive bootstrap circuits. The LTC7001JMSE#TRPBF achieves this without external diodes or complex timing constraints.

Can the LTC7001JMSE#TRPBF drive a MOSFET with gate charge (QG) exceeding 100nC?

Yes - the LTC7001JMSE#TRPBF's 1Ω pull-down and 2.2Ω pull-up drivers can efficiently handle MOSFETs with QG > 100nC. For example, with a 100nC FET and 12V gate drive, the theoretical gate charge time is ~220ns (QG/I_drive). The LTC7001JMSE#TRPBF's low R_DS(ON) ensures minimal RC delay, and its 35ns propagation delay remains unaffected. Layout and boot capacitor sizing (CB > QG/1V) remain critical for full performance.

What is the purpose of the NC pin (Pin 10) on the LTC7001JMSE#TRPBF?

Pin 10 of the LTC7001JMSE#TRPBF is a no-connect (NC) terminal with no internal connection or electrical function. It must be left floating - neither tied to GND nor routed - to avoid unintended coupling or mechanical stress on the package. This pin exists for mechanical symmetry and package compatibility; the LTC7001JMSE#TRPBF's functionality is fully defined by its other nine active terminals.

Does the LTC7001JMSE#TRPBF include thermal shutdown protection?

Yes - the LTC7001JMSE#TRPBF incorporates overtemperature shutdown that activates at approximately 180°C junction temperature, pulling TGDN to TS to disable the external MOSFET. Recovery occurs automatically when junction temperature falls below ~160°C. While not production-tested, this feature protects against catastrophic failure during overload or cooling failure. The LTC7001JMSE#TRPBF's 150°C maximum rated junction temperature reflects its guaranteed operational limit.