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Analog Devices Inc. LTC7060EMSE#PBF
- Part No.:
- LTC7060EMSE#PBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- Gate Drivers
- Package:
- 12-TSSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LTC7060EMSE#PBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 12MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:338
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Product details
Overview
LTC7060EMSE#PBF from Analog Devices is a 100V half-bridge gate driver IC designed to control dual N-channel MOSFETs in high-noise, high-voltage power stages. It features independent floating grounds for high-side (BST–SW) and low-side (BGVCC–BGRTN) drivers, 0.8Ω pull-down / 1.5Ω pull-up drive strength, programmable dead-time via external resistor, and adaptive shoot-through protection. It is used in automotive and industrial DC/DC converters requiring robust isolation between logic and power domains.
For engineers reviewing the LTC7060EMSE#PBF datasheet, LTC7060EMSE#PBF pinout, LTC7060EMSE#PBF application, or LTC7060EMSE#PBF equivalent, key selection considerations include its ±10V ground differential tolerance, 32–250 ns adjustable dead-time range, AEC-Q100 qualification (E-grade), thermally enhanced 12-lead MSOP package with exposed SGND pad, and three-state PWM input with enable control.
Technical Context
The LTC7060EMSE#PBF implements a symmetric double-floating architecture: both high-side (TG/SW/BST) and low-side (BG/BGRTN/BGVCC) driver sections operate with independent ground references, enabling operation across >100V bridge voltages while maintaining CMOS/TTL-compatible logic interface referenced to SGND. Its level-shifting circuitry supports fast propagation delays (e.g., 17 ns tPHL(TG)) and precise threshold-controlled three-state PWM decoding.
Protection is implemented at multiple levels: VCC UVLO/OVLO (5.3 V / 14.6 V), floating supply UVLO on both BGVCC–BGRTN and BST–SW (3.4 V), adaptive shoot-through detection based on MOSFET gate-source voltage sequencing, and thermal shutdown at ~180°C. The DT pin provides linear dead-time programming (32 ns to 250 ns) via a single resistor to SGND.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Input Voltage | 100 V - supports high-voltage half-bridge topologies independent of VCC supply |
| VCC Operating Range | 6 V to 14 V - powers internal logic and generates 4.5 V bias rail |
| Driver Supply Range | 4 V to 14 V per side (BST–SW and BGVCC–BGRTN) - drives logic-level or standard-threshold MOSFETs |
| Pull-Down Resistance | 0.8 Ω typical - delivers >6 A peak sink current at 10 V, minimizing turn-off delay and cross-conduction risk |
| Pull-Up Resistance | 1.5 Ω typical - delivers ~3 A peak source current at 10 V for fast MOSFET turn-on |
| Dead-Time Range | 32 ns to 250 ns - programmable via RDT (0 Ω to open) for optimized efficiency and shoot-through margin |
| Ground Differential Tolerance | ±10 V between SGND and SW or BGRTN - ensures noise immunity in high-dv/dt environments |
| Junction Temp Range | –40°C to 125°C - E-grade rating suitable for under-hood automotive and industrial ambient conditions |
Pinout & Package
Package: 12-lead plastic MSOP (MSE) with exposed thermal pad (Pin 13 = SGND), θJA = 40°C/W. Requires soldering of exposed pad to PCB ground for thermal and electrical integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | Three-state logic input | Drives TG/BG complementary states; floats to high-Z (both off) when undriven; internal 42 kΩ pull-down / 48 kΩ pull-up sets 2.1 V threshold region |
| EN | Enable control input | Logic-high (>1.2 V) enables drivers; internal 2 MΩ pull-down ensures default disable; overrides PWM state |
| FLT | Open-drain fault flag | Pulls low during VCC UVLO/OVLO, floating supply UVLO, or thermal shutdown; 60 Ω typical RDS(on); 100 µs release delay |
| DT | Dead-time programming | Resistor to SGND sets BG→TG and TG→BG propagation delay (32–250 ns); no capacitor required |
| VCC | IC bias supply | 6–14 V input powering internal 4.5 V regulator; independent of VIN; requires 0.1 µF bypass to SGND |
| BGVCC | Low-side driver supply | 4–14 V referenced to BGRTN; supplies BG output stage; requires local bootstrap capacitor to BGRTN |
| BGRTN | Low-side driver return | Kelvin-connected to bottom MOSFET source; supports –10 V to 100 V offset vs SGND |
| BG | Low-side gate driver output | Drives N-MOSFET gate between BGVCC and BGRTN; 0.8 Ω pull-down / 1.5 Ω pull-up |
| BST | High-side driver supply | 4–14 V referenced to SW; supplies TG output stage; requires local bootstrap capacitor to SW |
| TG | High-side gate driver output | Drives N-MOSFET gate between BST and SW; 0.8 Ω pull-down / 1.5 Ω pull-up; referenced to SW, not SGND |
| SW | High-side driver return | Kelvin-connected to top MOSFET source; supports –10 V to 100 V offset vs SGND |
| NC | No internal connection | Physically present but unconnected; must remain floating to isolate adjacent HV pins |
Key Features
| Feature | Design Value |
|---|---|
| Symmetric floating architecture | Independent SW and BGRTN references enable ±10 V ground differential tolerance and eliminate common-mode noise coupling into logic inputs |
| Adaptive shoot-through protection | Monitors actual MOSFET gate-source voltage sequencing-not fixed timing-to prevent simultaneous conduction under varying load/temperature conditions |
| Three-state PWM interface | Internal resistor divider creates defined high-Z window (1.9–2.3 V) allowing controller-initiated dead-time extension without external logic |
| Programmable dead-time | Single-resistor adjustment (RDT) yields predictable, temperature-stable propagation delay from 32 ns to 250 ns with <±10% variation |
| AEC-Q100 qualified (Grade E) | Validated for automotive powertrain and chassis applications per stress test requirements at –40°C to 125°C junction temperature |
| Integrated fault reporting | Open-drain FLT pin signals all critical faults (VCC UVLO/OVLO, floating supply UVLO, thermal shutdown) with built-in 100 µs debounce |
Applications
| Automotive On-Board Charger (OBC) | Industrial Isolated DC/DC Converter |
|---|---|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 800 V bidirectional CLLLC resonant converter for EV charging. IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated, noise-immune control of 100 V-rated power switches with adaptive shoot-through protection during zero-voltage switching transitions. Use Value: ±10 V ground differential tolerance maintains signal integrity across transformer-isolated domains; programmable dead-time optimizes ZVS margin without firmware changes. |
Use Scenario: Controlling primary-side MOSFETs in a 400 V input, 24 V output isolated full-bridge forward converter for factory automation PLCs. IC Role / Device Role / Timing Role: Floating gate driver delivering 6 A peak sink current to rapidly discharge large gate capacitance under high dv/dt conditions. Use Value: 0.8 Ω pull-down resistance minimizes turn-off delay and prevents cross-conduction losses in high-power, high-frequency operation. |
| Telecom 48 V Intermediate Bus Converter | Server VRM High-Side Driver |
Use Scenario: Driving synchronous rectifiers in a 48 V input, 12 V output phase-shifted full-bridge converter for data center power supplies. IC Role / Device Role / Timing Role: Dual floating driver enabling independent optimization of high-side and low-side gate drive voltages (e.g., 10 V for high-side, 5 V for low-side). Use Value: Independent BGVCC–BGRTN and BST–SW supply ranges (4–14 V each) allow tailored gate drive for different MOSFET thresholds and conduction loss trade-offs. |
Use Scenario: Replacing discrete high-side driver + level shifter in a 12 V input, 0.8 V output multiphase buck VRM for AI accelerators. IC Role / Device Role / Timing Role: Integrated high-side gate driver with bootstrap supply management and fault reporting for compact, high-density CPU/GPU power delivery. Use Value: Exposed SGND pad and 40°C/W θJA enable reliable thermal performance in space-constrained server motherboard layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5109BMAX/NOPB | Fixed 100 ns dead-time; no floating ground architecture; max 100 V VBS; no three-state PWM | Best suited for cost-sensitive, non-automotive 48 V systems where ground separation is not required | Select when design prioritizes simplicity over noise immunity and does not require programmable dead-time or AEC-Q100 compliance |
| UCC27211DRCR | Non-isolated dual-driver; 120 V abs max; no dead-time programming; no adaptive shoot-through; 1.8 Ω/0.9 Ω drive strength | Targeted at high-frequency GaN-based converters where ultra-low propagation delay (<10 ns) is critical | Select when system uses GaN FETs with low QG, operates >1 MHz, and can accept fixed timing with external dead-time control |
Compared with LM5109BMAX/NOPB and UCC27211DRCR, the LTC7060EMSE#PBF uniquely combines programmable dead-time, symmetric floating grounds, AEC-Q100 qualification, and adaptive shoot-through-making it the only option among the three qualified for automotive 800 V OBC and industrial 100 V+ isolated converters demanding ground noise resilience.
Availability
LTC7060EMSE#PBF is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial isolated DC/DC converters, and telecom intermediate bus converters requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.
Supply support for LTC7060EMSE#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, automotive, and communications markets.
The LTC7060EMSE#PBF belongs to Analog Devices' Power by Linear™ high-voltage gate driver family, engineered specifically for noise-immune, high-reliability power conversion in automotive and industrial systems operating up to 100 V bridge voltages.
FAQ
What is the maximum allowable ground voltage difference between SGND and SW or BGRTN for LTC7060EMSE#PBF?
The LTC7060EMSE#PBF supports a ground differential of ±10 V between SGND and SW, and ±10 V between SGND and BGRTN. This specification is explicitly guaranteed in the Absolute Maximum Ratings table and enables robust operation in high-dv/dt environments such as SiC-based converters. Exceeding ±10 V risks latch-up or permanent damage per the datasheet's stress limits.
Does LTC7060EMSE#PBF require external bootstrap diodes for high-side drive?
Yes, the LTC7060EMSE#PBF requires an external Schottky diode between VCC and BST to recharge the BST–SW bootstrap capacitor during low-side conduction. The IC itself does not integrate a charge pump or diode; it only discharges the capacitor during high-side drive. A typical implementation uses a 1N5819 or equivalent low-VF, fast-recovery diode placed close to the BST pin.
How is dead-time programmed on LTC7060EMSE#PBF, and what is the minimum achievable value?
Dead-time on LTC7060EMSE#PBF is set by connecting a resistor (RDT) from the DT pin to SGND. With RDT = 0 Ω, the dead-time is 32 ns - the minimum guaranteed value. The relationship is approximately linear: Dead-Time = RDT × 0.44 ns/kΩ + 32 ns. No capacitor or active circuitry is needed on the DT pin.
Is LTC7060EMSE#PBF pin-compatible with other members of the LTC706x family?
No, LTC7060EMSE#PBF is not pin-compatible with LTC7061, LTC7062, or LTC7063. While all share the same 12-lead MSOP package footprint, pin functions differ significantly - for example, LTC7061 lacks the DT pin and uses a different PWM interface scheme. Substitution requires PCB layout revision and firmware validation.
What fault conditions cause the FLT pin on LTC7060EMSE#PBF to assert?
The FLT pin on LTC7060EMSE#PBF asserts low during four confirmed fault conditions: (1) VCC falling below 5.3 V or rising above 14.6 V, (2) BGVCC–BGRTN falling below 3.4 V, (3) BST–SW falling below 3.4 V, and (4) junction temperature reaching ~180°C. All faults trigger immediate FLT pull-down; recovery occurs after 100 µs once all conditions clear.
LTC7060EMSE#PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 12-TSSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- -
- Driven Configuration:
- Half-Bridge
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- 6V ~ 14V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 12-MSOP-EP
LTC7060EMSE#PBF FAQ
1.How can I place an order for LTC7060EMSE#PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC7060EMSE#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC7060EMSE#PBF reliable?
The price and inventory of LTC7060EMSE#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC7060EMSE#PBF is usually 5 days.
3.What payment methods are accepted for LTC7060EMSE#PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC7060EMSE#PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LTC7060EMSE#PBF?
LTC7060EMSE#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC7060EMSE#PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC7060EMSE#PBF?
For technical support, including LTC7060EMSE#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC7060EMSE#PBF requirements.
6.How does Aetrix verify that LTC7060EMSE#PBF is sourced from the original manufacturer or authorized distributors?
All LTC7060EMSE#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC7060EMSE#PBF meets industry standards.
7.What is the process for return or replacement of LTC7060EMSE#PBF?
All LTC7060EMSE#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC7060EMSE#PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC7060EMSE#PBF part is unused and in its original packaging.
Return procedure for LTC7060EMSE#PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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